NTGD3148NT1G-VB

NTGD3148NT1G www.VBsemi.com Dual N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.022 at VGS = 4.5 V 6.0 0.028 at VGS = 2.5 V 5.0 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 1.8 nC TSOP-6 Top View 3 mm D1 G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 G1 2.85 mm D2 G2 S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Limit 20 ± 12 6.0 4.0 3.5b, c 2.8b, c 18 1.17 ID IDM Pulsed Drain Current TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e Continuous Source-Drain Diode Current IS Unit V A 0.95b, c 1.6 1.0 PD 1.14b, c 0.73b, c - 55 to 150 260 TJ, Tstg W °C THERMAL RESISTANCE RATINGS Parameter b, d t≤5s Steady State Maximum Junction-to-Ambient Maximum Junction-to-Foot Notes: a. TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 150 °C/W. Symbol RthJA RthJF Typical 93 75 Maximum 110 90 Unit °C/W 服务热线：400-655-8788 1 NTGD3148NT1G www.VBsemi.com SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS , ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs V 29 mV/°C -4 0.4 1.5 V ± 100 nA VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 55 °C 10 VDS ≥ 5 V, VGS = 10 V 10 µA A VGS = 4.5 V, ID = 3.4 A 0.022 2 VGS = 2.5 V, ID = 3.0 A 0.028 VDS = 10 V, ID = 3.4 A 10 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 400 VDS = 10 V, VGS = 0 V, f = 1 MHz 55 VDS = 10 V, VGS = 10 V, ID = 3.4 A 3.7 6 1.8 3 26 0.74 VDS = 10 V, VGS = 4.5 V, ID = 3.4 A VDD = 10 V, RL = 5.6 Ω ID ≅ 2.7 A, VGEN = 4.5 V, Rg = 1 Ω 1 5 10 10 20 15 30 10 20 tf 10 20 td(on) 5 10 15 30 td(off) tr td(off) nC 0.42 f = 1 MHz td(on) tr pF VDD = 10 V, RL = 5.6 Ω ID ≅ 2.7 A, VGEN = 10 V, Rg = 1 Ω tf 10 20 10 20 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 1.2 A 18 IS = 2.7 A, VGS = 0 V IF = 2.7 A, dI/dt = 100 A/µs, TJ = 25 °C 0.85 1.2 V 10 20 ns 4 10 nC 6 4 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 服务热线：400-655-8788 2 NTGD3148NT1G www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 15 5 V GS = 8V t h r u 3 V 4 I D - Drain Current (A) I D - Drain Current (A) 12 9 V GS = 2 V 6 T C = - 55 °C 3 2 T C = 25 °C 3 1 T C = 125 °C V GS = 1 V 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 0.5 1.0 2.0 2.5 3.0 25 30 V GS - Gate-to-Source Voltage (V) V DS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 600 0.050 500 Ciss 0.040 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 1.5 VGS = 2.5 V 0.030 VGS = 4.5 V 0.020 400 300 200 Coss 0.010 100 Crss 0 0.00 0 3 6 9 12 0 15 5 ID - Drain Current (A) 10 20 V DS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 1.8 10 ID = 3.4 A ID = 3.4 A 1.6 V DS = 10 V V DS = 6 V 6 V DS = 14 V 4 2 V GS = 2.5V , V GS = 4.5 V 1.4 (Normalized) 8 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 15 1.2 1.0 0.8 0 0 1 2 3 Qg - Total Gate Charge (nC) Gate Charge 4 0.6 - 50 - 25 0 25 50 75 100 125 150 T J - Junction Temperature (°C) On-Resistance vs. Junction Temperature 服务热线：400-655-8788 3 NTGD3148NT1G www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.14 ID = 3.4 A R DS(on) - On-Resistance (Ω) I S - Source Current (A) 0.12 T J = 150 °C 10 T J = 25 °C 1 0.10 0.08 T J = 125 °C 0.06 T J = 25 °C 0.04 0.02 0.1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 V GS - Gate-to-Source Voltage (V) V SD - Source-to-Drain Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 1.9 6 ID = 250 μA 1.8 5 1.7 4 Power (W) VGS(th) (V) 1.6 1.5 1.4 3 2 1.3 1 1.2 1.1 - 50 - 25 0 25 50 75 100 125 0 0.01 150 0.1 T J - Temperature (°C) 1 10 100 1000 Time (s) Threshold Voltage Single Pulse Power (Junction-to-Ambient) 100 Limited by RDS(on) * I D - Drain Current (A) 10 100 μs 1 1 ms TA = 25 °C Single Pulse 10 ms 0.1 BVDSS Limited 0.01 0.1 1 10 100 ms 1 s, 10 s DC 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 服务热线：400-655-8788 4 NTGD3148NT1G www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 5 1.6 4 Power Dissipation (W) I D - Drain Current (A) 1.2 Package Limited 3 2 0.8 0.4 1 0 0.0 0 25 50 75 100 T C - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 T C - Foot Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 服务热线：400-655-8788 5 NTGD3148NT1G www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 150 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot 服务热线：400-655-8788 6 NTGD3148NT1G www.VBsemi.com TSOP: 5/6−LEAD JEDEC Part Number: MO-193C e1 e1 5 4 6 E1 1 2 5 4 E E1 1 3 2 3 -B- e b E -B- e 0.15 M C B A 5-LEAD TSOP b 0.15 M C B A 6-LEAD TSOP 4x 1 -A- D 0.17 Ref c R R A2 A L2 Gauge Plane Seating Plane Seating Plane 0.08 C L A1 -C- (L1) 4x 1 MILLIMETERS Dim A A1 A2 b c D E E1 e e1 L L1 L2 R INCHES Min Nom Max Min Nom Max 0.91 - 1.10 0.036 - 0.043 0.01 - 0.10 0.0004 - 0.004 0.90 - 1.00 0.035 0.038 0.039 0.30 0.32 0.45 0.012 0.013 0.018 0.10 0.15 0.20 0.004 0.006 0.008 2.95 3.05 3.10 0.116 0.120 0.122 2.70 2.85 2.98 0.106 0.112 0.117 1.55 1.65 1.70 0.061 0.065 0.067 0.95 BSC 0.0374 BSC 1.80 1.90 2.00 0.071 0.075 0.079 0.32 - 0.50 0.012 - 0.020 0.60 Ref 0.024 Ref 0.25 BSC 0.010 BSC 0.10 - - 0.004 - - 0 4 8 0 4 8 7 Nom 1 ECN: C-06593-Rev. I, 18-Dec-06 DWG: 5540 7 Nom 服务热线：400-655-8788 7 NTGD3148NT1G www.VBsemi.com RECOMMENDED MINIMUM PADS FOR TSOP-6 0.099 0.039 0.020 0.019 (1.001) (0.508) (0.493) 0.064 (1.626) 0.028 (0.699) (3.023) 0.119 (2.510) Recommended Minimum Pads Dimensions in Inches/(mm) 服务热线：400-655-8788 8 NTGD3148NT1G www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.com) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A.