NTGS5120P

NTGS5120P Power MOSFET Features −60 V, −2.9 A, Single P−Channel, TSOP−6 • 60 V BVds, Low RDS(on) in TSOP−6 Package • 4.5 V Gate Rating • This is a Pb−Free Device Applications http://onsemi.com • High Side Load Switch • Power Switch for Printers, Communication Equipment MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Steady State tv5s Power Dissipation (Note 1) Steady State tv5s Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current TA = 25°C Steady State TA = 85°C TA = 25°C tp = 10 ms PD IDM TJ, TSTG TL ID TA = 25°C TA = 85°C TA = 25°C PD TA = 25°C 1.4 −1.8 −1.3 0.6 −8 −55 to 150 260 A W A °C °C Symbol VDSS VGS ID Value −60 $20 −2.5 −2.0 −2.9 1.1 W A Unit V V V(BR)DSS −60 V RDS(ON) MAX 111 mW @ −10 V 142 mW @ −4.5 V ID MAX −2.9 A P−Channel 1256 3 4 MARKING DIAGRAM TSOP−6 CASE 318G STYLE 1 1 1 P6 MG G Operating Junction and Storage Temperature Lead Temperature for Soldering Purposes (1/8” from case for 10 s) P6 = Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces) 2. Surface−mounted on FR4 board using the minimum recommended pad size. PIN ASSIGNMENT Drain Drain Source 654 1 2 3 Drain Drain Gate ORDERING INFORMATION Device NTGS5120PT1G Package Shipping† TSOP−6 3000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 Publication Order Number: NTGS5120P/D © Semiconductor Components Industries, LLC, 2008 June, 2008 − Rev. P0 NTGS5120P THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction−to−Ambient – Steady State (Note 3) Junction−to−Ambient – t = 5 s (Note 3) Junction−to−Ambient – Steady State (Note 4) Symbol RqJA RqJA RqJA Value 102 77.6 200 °C/W Unit 3. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces) 4. Surface−mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Drain−to−Source On Resistance Forward Transconductance VGS(TH) RDS(on) gFS CISS COSS CRSS QG(TOT) QG(TH) QGS QGD td(ON) tr td(OFF) tf VSD tRR ta QRR VGS = 0 V, IS = −0.9 A TJ = 25°C VGS = −10 V, VDS = −30 V, ID = −1.0 A, RG = 6.0 W VGS = −10 V, VDS = −30 V; ID = −2.9 A VGS = 0 V, f = 1 MHz, VDS = −30 V VGS = VDS, ID = −250 mA VGS = −10 V, ID = −2.9 A VGS = −4.5 V, ID = −2.5 A VDS = −5.0 V, ID = −6.0 A CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Reverse Recovery Charge −0.75 18.3 VGS = 0 V, dIS/dt = 100 A/ms, IS = −0.9 A 15.5 15.1 −1.0 V ns ns nC 8.7 4.9 38 12.8 ns 942 72 48 18.1 1.2 2.7 3.6 nC pF −1.0 72 88 10.1 −3.0 111 142 S V mW V(BR)DSS IDSS IGSS VGS = 0 V, ID = −250 mA VGS = 0 V, VDS = −48 V TJ = 25°C TJ = 125°C −60 −1.0 −5.0 $100 $200 nA nA V mA Symbol Test Condition Min Typ Max Unit VDS = 0 V, VGS = ±12 V VDS = 0 V, VGS = ±20 V 5. Pulse Test: pulse width v 300 ms, duty cycle v 2% 6. Switching characteristics are independent of operating junction temperatures http://onsemi.com 2 NTGS5120P TYPICAL CHARACTERISTICS 3.5 −ID, DRAIN CURRENT (A) 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.5 1.0 1.5 2.0 −2.4 V VGS = −2.2 V 2.5 3.0 −10 V −3.2 V −4.5 V −2.6 V −3.0 V −2.8 V TJ = 25°C −ID, DRAIN CURRENT (A) 5.0 VDS ≥ −10 V 4.0 3.0 2.0 1.0 0 TJ = −55°C TJ = 25°C TJ = 125°C 0.4 0.9 1.4 1.9 2.4 2.9 3.4 3.9 −VGS, GATE−TO−SOURCE VOLTAGE (V) −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.20 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 ID = −2.9 A TJ = 25°C RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.10 0.09 0.08 Figure 2. Transfer Characteristics TJ = 25°C VGS = −4.5 V VGS = −10 V 0.07 0.06 0.05 0.04 1.0 2.0 3.0 4.0 5.0 6.0 7.0 −VGS, GATE−TO−SOURCE VOLTAGE (V) −ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate Voltage 10,000 1.8 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.6 1.4 1.2 1.0 0.8 0.6 −50 −25 0 25 50 75 100 125 150 10 ID = −2.9 A VGS = −4.5 V −IDSS, LEAKAGE (nA) 1000 Figure 4. On−Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 150°C TJ = 125°C 100 10 20 30 40 50 60 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 NTGS5120P TYPICAL CHARACTERISTICS 1300 1200 1100 1000 900 800 700 600 500 400 300 Coss 200 100 0 Crss 0 −VGS, GATE−TO−SOURCE VOLTAGE (V) 10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0 2.0 4.0 6.0 8.0 10 12 Qgs Qgd TJ = 25°C ID = −2.9 A Vds = −30 V 14 16 18 Qt C, CAPACITANCE (pF) Ciss VGS = 0 V TJ = 25°C 10 20 30 40 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation 1000 −IS, SOURCE CURRENT (A) VDD = −30 V ID = −1.0 A VGS = −10 V t, TIME (ns) 100 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 Figure 8. Gate−to−Source Voltage vs. Total Charge VGS = 0 V TJ = 25°C td(off) tf td(on) 10 tr 1.0 1.0 10 RG, GATE RESISTANCE (W) 100 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 −VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current http://onsemi.com 4 NTGS5120P PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE S D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L HE q MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 1 0° − MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° INCHES NOM 0.039 0.002 0.014 0.007 0.118 0.059 0.037 0.016 0.108 − MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 1 0° HE 6 1 5 2 4 3 E b e c L q 0.05 (0.002) A1 A SOLDERING FOOTPRINT* 2.4 0.094 STYLE 1: PIN 1. DRAIN 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN 1.9 0.075 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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