NTGS5120PT1G

NTGS5120P, NVGS5120P Power MOSFET −60 V, −2.9 A, Single P−Channel, TSOP−6 Features • 60 V BVds, Low RDS(on) in TSOP−6 Package • 4.5 V Gate Rating • NV Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable This is a Pb−Free Device http://onsemi.com V(BR)DSS RDS(ON) MAX 111 mW @ −10 V −60 V Applications P−Channel 1 2 5 6 MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Symbol Value Unit Drain−to−Source Voltage VDSS −60 V Gate−to−Source Voltage VGS $20 V ID −2.5 Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State TA = 25°C tv5s TA = 25°C Steady State TA = 85°C −2.0 Power Dissipation (Note 2) Pulsed Drain Current A 4 MARKING DIAGRAM 1.1 TA = 25°C W 1.4 TA = 25°C Steady State 3 −2.9 PD tv5s Continuous Drain Current (Note 2) ID TA = 85°C TA = 25°C tp = 10 ms Operating Junction and Storage Temperature Lead Temperature for Soldering Purposes (1/8” from case for 10 s) −2.9 A 142 mW @ −4.5 V • High Side Load Switch • Power Switch for Printers, Communication Equipment Parameter ID MAX −1.8 A −1.3 PD 0.6 W IDM −20 A TJ, TSTG −55 to 150 °C TL 260 °C 1 TSOP−6 CASE 318G STYLE 1 XX MG G 1 XX = Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) PIN ASSIGNMENT Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces) 2. Surface−mounted on FR4 board using the minimum recommended pad size. Drain Drain Source 6 5 4 1 2 3 Drain Drain Gate ORDERING INFORMATION See detailed ordering and shipping information ion page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2014 August, 2014 − Rev. 1 1 Publication Order Number: NTGS5120P/D NTGS5120P, NVGS5120P THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Junction−to−Ambient – Steady State (Note 3) Parameter RqJA 102 Junction−to−Ambient – t = 5 s (Note 3) RqJA 77.6 Junction−to−Ambient – Steady State (Note 4) RqJA 200 Unit °C/W 3. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces) 4. Surface−mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min V(BR)DSS VGS = 0 V, ID = −250 mA −60 Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS VGS = 0 V, VDS = −48 V IGSS V TJ = 25°C −1.0 TJ = 125°C −5.0 mA VDS = 0 V, VGS = ±12 V $100 nA VDS = 0 V, VGS = ±20 V $200 nA −3.0 V 72 111 mW VGS = −4.5 V, ID = −2.5 A 88 142 VDS = −5.0 V, ID = −6.0 A 10.1 S 942 pF ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(TH) VGS = VDS, ID = −250 mA Drain−to−Source On Resistance RDS(on) VGS = −10 V, ID = −2.9 A Forward Transconductance gFS −1.0 CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 48 Total Gate Charge QG(TOT) 18.1 Threshold Gate Charge QG(TH) 1.2 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 3.6 td(ON) 8.7 VGS = 0 V, f = 1 MHz, VDS = −30 V VGS = −10 V, VDS = −30 V; ID = −2.9 A 72 nC 2.7 SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr VGS = −10 V, VDS = −30 V, ID = −1.0 A, RG = 6.0 W td(OFF) tf ns 4.9 38 12.8 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Charge Time Reverse Recovery Charge VGS = 0 V, IS = −0.9 A TJ = 25°C VGS = 0 V, dIS/dt = 100 A/ms, IS = −0.9 A ta QRR −0.75 −1.0 V 18.3 ns 15.5 ns 15.1 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width v 300 ms, duty cycle v 2% 6. Switching characteristics are independent of operating junction temperatures http://onsemi.com 2 NTGS5120P, NVGS5120P TYPICAL CHARACTERISTICS −2.8 V 2.5 −3.2 V −ID, DRAIN CURRENT (A) −10 V 5.0 TJ = 25°C 3.0 −4.5 V −2.6 V 2.0 1.5 1.0 −2.4 V 0.5 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) −3.0 V VGS = −2.2 V 0 0.5 1.0 1.5 2.0 2.5 3.0 3.0 2.0 TJ = −55°C 1.0 TJ = 25°C TJ = 125°C 0.4 0.9 1.4 1.9 2.4 2.9 3.4 −VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics ID = −2.9 A TJ = 25°C 0.18 0.16 0.14 0.12 0.10 0.08 0.06 2.0 4.0 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.20 0.04 VDS ≥ −10 V 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) −ID, DRAIN CURRENT (A) 3.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 −VGS, GATE−TO−SOURCE VOLTAGE (V) 0.10 3.9 TJ = 25°C VGS = −4.5 V 0.09 0.08 VGS = −10 V 0.07 0.06 0.05 0.04 1.0 2.0 3.0 4.0 5.0 6.0 7.0 −ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage VGS = 0 V ID = −2.9 A VGS = −4.5 V 1.6 −IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 10,000 1.8 1.4 1.2 1.0 TJ = 150°C 1000 TJ = 125°C 100 0.8 0.6 −50 −25 0 25 50 75 100 125 150 10 10 TJ, JUNCTION TEMPERATURE (°C) 20 30 40 50 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 60 NTGS5120P, NVGS5120P 1300 1200 1100 1000 900 800 700 600 500 400 300 Coss 200 100 0 Crss 0 VGS = 0 V TJ = 25°C Ciss 10 −VGS, GATE−TO−SOURCE VOLTAGE (V) C, CAPACITANCE (pF) TYPICAL CHARACTERISTICS 20 40 30 8.0 7.0 6.0 5.0 4.0 3.0 Qgd Qgs TJ = 25°C ID = −2.9 A Vds = −30 V 2.0 1.0 0 0 2.0 4.0 6.0 8.0 10 12 14 16 QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Total Charge 18 1.4 −IS, SOURCE CURRENT (A) VDD = −30 V ID = −1.0 A VGS = −10 V td(off) 100 tf td(on) 10 tr 1.0 10 1.0 0.8 0.6 0.4 0.2 0 100 VGS = 0 V TJ = 25°C 1.2 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 RG, GATE RESISTANCE (W) −VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 ID, DRAIN CURRENT (AMPS) t, TIME (ns) Qt −VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 1.0 10 9.0 10 ms 10 100 ms 1 0.1 0.01 0.1 1 ms 0 V ≤ VGS ≤ 20 V SINGLE PULSE TC = 25°C 10 ms RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT dc 10 1 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 11. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 4 100 NTGS5120P, NVGS5120P Rthja(t), TRANSIENT THERMAL RESPONSE (°C/W) TYPICAL CHARACTERISTICS 1000 100 D = 0.5 10 1 0.2 0.1 0.05 0.02 0.01 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t, PULSE TIME (s) Figure 12. Thermal Response Table 1. ORDERING INFORMATION Part Number Marking (XX) Package Shipping† NTGS5120PT1G P6 TSOP−6 (Pb−Free) 3000 / Tape & Reel NVGS5120PT1G VP6 TSOP−6 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 NTGS5120P, NVGS5120P PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE V D ÉÉÉ ÉÉÉ 6 E1 1 5 2 H L2 4 GAUGE PLANE E 3 NOTE 5 L b C DETAIL Z e SEATING PLANE c A 0.05 M A1 DETAIL Z RECOMMENDED SOLDERING FOOTPRINT* 6X 0.60 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSIONS D AND E1 ARE DETERMINED AT DATUM H. 5. PIN ONE INDICATOR MUST BE LOCATED IN THE INDICATED ZONE. MILLIMETERS DIM MIN NOM MAX A 0.90 1.00 1.10 A1 0.01 0.06 0.10 b 0.25 0.38 0.50 c 0.10 0.18 0.26 D 2.90 3.00 3.10 E 2.50 2.75 3.00 E1 1.30 1.50 1.70 e 0.85 0.95 1.05 L 0.20 0.40 0.60 L2 0.25 BSC 0° 10° M − STYLE 1: PIN 1. DRAIN 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN 6X 3.20 0.95 0.95 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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