NTMFD5C446NLT1G

NTMFD5C446NL MOSFET – Power, Dual, N-Channel 40 V, 2.65 mW, 145 A Features • • • • Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) MAX ID MAX 2.65 mW @ 10 V 40 V 145 A 3.9 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS ±20 V ID 145 A Parameter Continuous Drain Current RqJC (Notes 1, 2, 3) TC = 25°C Power Dissipation RqJC (Notes 1, 2) Continuous Drain Current RqJA (Notes 1, 2, 3) Steady State TC = 100°C TC = 25°C Pulsed Drain Current PD TC = 100°C TA = 25°C Power Dissipation RqJA (Notes 1 & 2) 105 Steady State ID A 25 PD D1 D1 1.8 A TJ, Tstg −55 to + 175 °C IS 91 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 11 A) EAS 171 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter MARKING DIAGRAM W 3.5 644 Source Current (Body Diode) S2 S1 IDM Operating Junction and Storage Temperature G2 G1 W 125 18 TA = 100°C TA = 25°C, tp = 10 ms D2 D1 62 TA = 100°C TA = 25°C Dual N−Channel Symbol Value Unit Junction−to−Case − Steady State RqJC 1.38 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 46.9 1 DFN8 5x6 (SO8FL) CASE 506BT A Y W ZZ S1 G1 S2 G2 XXXXXX AYWZZ D1 D1 D2 D2 D2 D2 = Assembly Location = Year = Work Week = Lot Traceability ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2015 May, 2019 − Rev. 0 1 Publication Order Number: NTMFD5C446NL/D NTMFD5C446NL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 40 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 23 VGS = 0 V, VDS = 40 V mV/°C TJ = 25 °C 10 TJ = 125°C 100 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 90 mA 100 mA nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance Forward Transconductance RDS(on) 1.2 2.2 −5.2 VGS = 10 V ID = 20 A 2.2 2.65 VGS = 4.5 V ID = 20 A 3.0 3.9 gFS VDS = 15 V, ID = 50 A 138 V mV/°C mW S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 3170 VGS = 0 V, f = 1 MHz, VDS = 25 V 1270 pF 48 Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 32 V; ID = 50 A 25 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 32 V; ID = 50 A 54 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Plateau Voltage VGP 5.7 td(ON) 14.8 5.7 VGS = 4.5 V, VDS = 32 V; ID = 50 A nC 10.7 7.0 V SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = 4.5 V, VDS = 32 V, ID = 5 A, RG = 1.0 W tf 16.8 34.9 ns 15.2 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD VGS = 0 V, IS = 20 A TJ = 25°C 0.8 TJ = 125°C 0.7 tRR ta tb V 54 VGS = 0 V, dIS/dt = 50 A/ms, IS = 5 A QRR 24 ns 30 55 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTMFD5C446NL TYPICAL CHARACTERISTICS 220 5 V to 10 V 180 4.5 V ID, DRAIN CURRENT (A) 160 3.6 V 140 120 3.4 V 100 80 VGS = 3.2 V 60 40 20 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 0 VDS = 10 V 160 3.8 V 180 140 120 100 80 60 TJ = 25°C 40 20 0 0.5 1.0 1.5 3.0 2.5 2.0 0 0 2.0 1.5 TJ = −55°C 2.5 3.0 3.5 Figure 2. Transfer Characteristics TJ = 25°C ID = 20 A 4 3 2 1 0 4 5 6 7 8 9 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 4.0 4.0 TJ = 25°C 3.5 VGS = 4.5 V 3.0 2.5 VGS = 10 V 2.0 1.5 15 25 35 45 55 65 75 85 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 2.2 RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 1.0 Figure 1. On−Region Characteristics 5 2.0 0.5 VGS, GATE−TO−SOURCE VOLTAGE (V) 6 3 TJ = 125°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 200 1M VGS = 10 V ID = 20 A TJ = 175°C 100K IDSS, LEAKAGE (nA) 1.8 1.6 1.4 1.2 1.0 0.8 TJ = 150°C 10K TJ = 125°C 1K TJ = 85°C 100 10 TJ = 25°C 1 0.6 0.1 −50 −25 0 25 50 75 100 125 150 175 5 10 15 20 25 30 35 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 40 NTMFD5C446NL TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) 10K C, CAPACITANCE (pF) CISS COSS 1K 100 VGS = 0 V TJ = 25°C f = 1 MHz 10 0 5 CRSS 10 15 20 25 30 35 40 10 VDS = 32 V ID = 50 A TJ = 25°C 9 8 7 6 5 QGS 4 QGD 3 2 1 0 30 20 10 0 40 50 VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source vs. Total Charge 1K t, TIME (ns) IS, SOURCE CURRENT (A) VGS = 0 V VGS = 4.5 V VDS = 32 V ID = 5 A td(off) tf tr 100 td(on) 1 10 ID, DRAIN CURRENT (A) 100 TJ = 125°C 0.4 0.5 TJ = 25°C 0.6 0.7 TJ = −55°C 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1K 100 TC = 25°C VGS ≤ 10 V Single Pulse 100 TJ (initial) = 25°C 10 10 ms 1 0.1 1 IPEAK, (A) 10 10 RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 10 TJ (initial) = 100°C 0.5 ms 1 ms 10 ms 1 1K 100 0.00001 0.0001 0.001 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche www.onsemi.com 4 0.01 NTMFD5C446NL TYPICAL CHARACTERISTICS 100 R(t) (°C/W) 50% Duty Cycle 10 20% 10% 5% 1 2% 1% 0.1 0.01 NVMFD5C446NL 5x6 SOFL DS PCB Cu Area 650 mm2 PCB Cu thk 2oz Single Pulse 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Characteristics DEVICE ORDERING INFORMATION Device Marking Package Shipping† NTMFD5C446NLT1G 5C446L DFN8 (Pb−Free) 1500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN8 5x6, 1.27P Dual Flag (SO8FL−Dual) CASE 506BT ISSUE F 1 2X SCALE 2:1 0.20 C D A B D1 8 7 6 ÉÉ ÉÉ ÉÉ PIN ONE IDENTIFIER NOTE 7 1 2 2X 0.20 C 5 DATE 23 NOV 2021 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30 MM FROM THE TERMINAL TIP. 4. PROFILE TOLERANCE APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 5. DIMENSIONS D1 AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 6. SEATING PLANE IS DEFINED BY THE TERMINALS. A1 IS DEFINED AS THE DISTANCE FROM THE SEATING PLANE TO THE LOWEST POINT ON THE PACKAGE BODY. 7. A VISUAL INDICATOR FOR PIN 1 MUST BE LOCATED IN THIS AREA. E1 E 4X h 3 4 c TOP VIEW A1 0.10 C A DETAIL B 0.10 C NOTE 4 C SIDE VIEW DETAIL A D2 D3 4X e 1 SEATING PLANE NOTE 6 ALTERNATE CONSTRUCTION DETAIL A L K 4 DIM A A1 b b1 c D D1 D2 D3 E E1 E2 e G h K K1 L M N MILLIMETERS NOM MIN MAX −−− 0.90 1.10 −−− −−− 0.05 0.33 0.42 0.51 0.33 0.42 0.51 0.20 −−− 0.33 5.15 BSC 4.70 4.90 5.10 3.90 4.10 4.30 1.50 1.70 1.90 6.15 BSC 5.70 5.90 6.10 3.90 4.15 4.40 1.27 BSC 0.45 0.55 0.65 −−− −−− 12 _ 0.51 −−− −−− 0.56 −−− −−− 0.48 0.61 0.71 3.25 3.50 3.75 1.80 2.00 2.20 SOLDERING FOOTPRINT* DETAIL B 4.56 M 4X b1 N 4X 8 G 5 8X 2X 2X 2.08 8X E2 0.75 0.56 b K1 BOTTOM VIEW 0.10 C A B 0.05 C GENERIC MARKING DIAGRAM* 1 XXXXXX AYWZZ NOTE 3 4.84 4X 6.59 3.70 0.70 4X XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability 1.40 2.30 1.00 1.27 PITCH 5.55 DIMENSION: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON50417E Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. DFN8 5X6, 1.27P DUAL FLAG (SO8FL−DUAL) PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative