NTMFD6H852NLT1G

NTMFD6H852NL Power MOSFET 80 V, 25.5 mW, 25 A, Dual N−Channel Features • • • • Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb−Free and are RoHS Compliant www.onsemi.com V(BR)DSS MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RJC (Notes 1, 2, 3) TC = 25°C Power Dissipation RJC (Notes 1, 2) Continuous Drain Current RJA (Notes 1, 2, 3) Steady State Pulsed Drain Current Value Unit VDSS 80 V VGS ±20 V ID 25 A TC = 100°C TC = 25°C PD Steady State ID Operating Junction and Storage Temperature Range Source Current (Body Diode) A 7 PD S2 S1 1.6 IDM 98 A TJ, Tstg −55 to +175 °C IS 32 A MARKING DIAGRAM D1 D1 86 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Junction−to−Ambient − Steady State (Note 2) G2 G1 W 3.2 EAS Parameter D2 W 38 Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, IL(pk) = 1.3 A) Junction−to−Case − Steady State Dual N−Channel D1 5 TA = 100°C TA = 25°C, tp = 10 s 25 A 31.5 m @ 4.5 V 19 TA = 100°C TA = 25°C ID MAX 25.5 m @ 10 V 80 V 18 TC = 100°C TA = 25°C Power Dissipation RJA (Notes 1, 2) Symbol RDS(ON) MAX Symbol Value Unit RJC 3.95 °C/W RJA 47.3 1 DFN8 5x6 (SO8FL) CASE 506BT A Y W ZZ S1 G1 S2 G2 XXXXXX AYWZZ D1 D1 D2 D2 D2 D2 = Assembly Location = Year = Work Week = Lot Traceability ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2019 April, 2019 − Rev. 0 1 Publication Order Number: NTMFD6H852NL/D NTMFD6H852NL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 A 80 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 47.5 VGS = 0 V, VDS = 80 V mV/°C TJ = 25 °C 10 TJ = 125°C 250 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 26 A 100 A nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance Forward Transconductance RDS(on) 1.2 2.0 −5.0 VGS = 10 V ID = 10 A 21 25.5 VGS = 4.5 V ID = 10 A 25 31.5 gFS VDS = 5 V, ID = 10 A V mV/°C 38 m S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 521 VGS = 0 V, f = 1 MHz, VDS = 40 V 69 pF 4 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 40 V; ID = 10 A Total Gate Charge QG(TOT) 5 Threshold Gate Charge QG(TH) 1.1 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 1.7 Plateau Voltage VGP 3.1 td(ON) 7 VGS = 4.5 V, VDS = 40 V; ID = 10 A 10 nC 1.9 V SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = 4.5 V, VDS = 64 V, ID = 10 A, RG = 2.5  tf 23 ns 19 16 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD VGS = 0 V, IS = 10 A TJ = 25°C 0.8 TJ = 125°C 0.7 tRR ta tb 1.2 V 25 VGS = 0 V, dIS/dt = 100 A/s, IS = 10 A QRR 18 ns 7 20 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 s, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTMFD6H852NL TYPICAL CHARACTERISTICS 10 to 3.6 V 25 3.4 V VGS = 3.2 V VDS = 10 V 15 3.0 V 10 2.8 V 5 2.6 V 0 2.4 V 1 3 2 5 4 7 6 TJ = 25°C 5 8 TJ = 125°C 0.5 0 1.0 1.5 TJ = −55°C 2.0 2.5 3.5 3.0 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics ID = 10 A TJ = 25°C 28 26 24 22 20 18 3 10 0 30 16 15 RDS(on), DRAIN−TO−SOURCE RESISTANCE (m) 0 20 ID, DRAIN CURRENT (A) 20 4 5 6 7 8 9 10 30 4.0 TJ = 25°C VGS = 4.5 V 25 VGS = 10 V 20 15 10 12 16 14 18 20 24 22 26 VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 2.5 100 ID = 10 A VGS = 10 V TJ = 175°C 10 2.0 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) RDS(on), DRAIN−TO−SOURCE RESISTANCE (m) ID, DRAIN CURRENT (A) 25 1.5 1.0 TJ = 150°C 1 TJ = 125°C 0.1 TJ = 85°C 0.01 TJ = 25°C 0.001 0.5 −50 −25 0 25 50 75 100 125 150 0.0001 175 5 15 25 35 45 55 65 75 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 NTMFD6H852NL C, CAPACITANCE (pF) 1000 VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS Ciss 100 Coss 10 1 Crss TJ = 25°C VGS = 0 V f = 1 MHz 0 10 20 30 40 50 60 70 80 7 6 5 QGS 4 QGD 3 2 1 0 1 0 2 3 4 6 7 8 9 Figure 8. Gate−to−Source vs. Total Charge 10 IS, SOURCE CURRENT (A) td(off) td(on) 10 VGS = 4.5 V VDS = 64 V ID = 10 A 1 10 100 10 VGS = 0 V 1 0.1 TJ = 125°C 0.3 0.4 TJ = 25°C 0.5 0.6 TJ = −55°C 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE () VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 100 100 TJ(initial) = 25°C 10 IPEAK (A) 10 TC = 25°C VGS ≤ 10 V Single Pulse 1 0.1 5 Figure 7. Capacitance Variation tr t, TIME (ns) 8 QG, TOTAL GATE CHARGE (nC) tf ID, DRAIN CURRENT (A) VDS = 40 V ID = 10 A TJ = 25°C 9 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 100 1 10 RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 10 s 0.5 ms 1 ms 10 ms 1 1000 100 0.1 TJ(initial) = 100°C 0.00001 0.0001 0.001 0.01 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Drain Current vs. Time in Avalanche www.onsemi.com 4 NTMFD6H852NL TYPICAL CHARACTERISTICS 100 50% Duty Cycle R(t) (°C/W) 10 1 20% 10% 5% 2% 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Response DEVICE ORDERING INFORMATION Device Marking Package Shipping† NTMFD6H852NLT1G 6H852L DFN8 (Pb−Free) 1500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 NTMFD6H852NL PACKAGE DIMENSIONS DFN8 5x6, 1.27P Dual Flag (SO8FL−Dual) CASE 506BT ISSUE E 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30 MM FROM THE TERMINAL TIP. 4. PROFILE TOLERANCE APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 5. DIMENSIONS D1 AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 6. SEATING PLANE IS DEFINED BY THE TERMINALS. A1 IS DEFINED AS THE DISTANCE FROM THE SEATING PLANE TO THE LOWEST POINT ON THE PACKAGE BODY. 7. A VISUAL INDICATOR FOR PIN 1 MUST BE LOCATED IN THIS AREA. 0.20 C D A B D1 8 7 6 ÉÉ ÉÉ PIN ONE IDENTIFIER NOTE 7 1 2 2X 0.20 C 5 E1 E 4X h c 3 A1 4 TOP VIEW DETAIL B 0.10 C 0.10 C NOTE 4 SIDE VIEW C DETAIL A 4X 4X b1 8 5 K1 BOTTOM VIEW 2X 0.56 L 4.84 N G 2X 2.08 K 4 DETAIL B 4X 4.56 0.75 e M SOLDERING FOOTPRINT* SEATING PLANE NOTE 6 8X D2 D3 1 ALTERNATE CONSTRUCTION DETAIL A A 8X 4X 1.40 2.30 DIM A A1 b b1 c D D1 D2 D3 E E1 E2 e G h K K1 L M N MILLIMETERS MIN MAX MAX 0.90 1.10 −−− −−− −−− 0.05 0.33 0.42 0.51 0.33 0.42 0.51 0.20 −−− 0.33 5.15 BSC 4.70 4.90 5.10 3.90 4.10 4.30 1.50 1.70 1.90 6.15 BSC 5.70 5.90 6.10 3.90 4.15 4.40 1.27 BSC 0.45 0.55 0.65 −−− −−− 12 _ 0.51 −−− −−− 0.56 −−− −−− 0.48 0.61 0.71 3.25 3.50 3.75 1.80 2.00 2.20 6.59 3.70 E2 0.70 b 0.10 C A B 0.05 C NOTE 3 4X 1.27 PITCH 5.55 1.00 DIMENSION: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ◊ N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 www.onsemi.com 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTMFD6H852NL/D Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: ON Semiconductor: NTMFD6H852NLT1G