NTMFS4707NT3G

NTMFS4707N Power MOSFET 30 V, 17 A, Single N−Channel, SOIC−8 Flat Lead Features • • • • • Fast Switching Times Low Gate Charge Low RDS(on) Low Inductance SOIC−8 Package These are Pb−Free Devices http://onsemi.com V(BR)DSS RDS(on) Typ ID Max 10 mW @ 10 V 30 V Applications 17 A 13.5 mW @ 4.5 V • Notebooks, Graphics Cards • DC−DC Converters • Synchronous Rectification N−Channel D MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V ID 10.2 A Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State TA = 25°C TA = 85°C 7.4 t ≤ 10 s TA = 25°C 17 Steady State PD Power Dissipation (Note 2) Steady State Pulsed Drain Current MARKING DIAGRAM & PIN ASSIGNMENT W 2.3 D 6.25 ID TA = 25°C TA = 85°C TA = 25°C tp ≤ 10 ms Operating Junction and Storage Temperature Single Pulse Drain−to−Source Avalanche Energy (VDD = 25 V, VGS = 10 V, IPK = 7.0 A, L = 10 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) A 6.9 4.9 PD 1.0 W IDM 51 A TJ, TSTG −55 to 150 °C Source Current (Body Diode) IS 6.25 A EAS 245 mJ TL 260 °C THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Ambient – Steady State (Note 1) RqJA 55 °C/W Junction−to−Ambient – t ≤ 10 s (Note 1) RqJA 20 Junction−to−Ambient – Steady State (Note 2) RqJA 122.5 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. Surface−mounted on FR4 board using the minimum recommended pad size (Cu area = 0.412 in sq). © Semiconductor Components Industries, LLC, 2012 May, 2012 − Rev. 4 S TA = 25°C t ≤ 10 s Continuous Drain Current (Note 2) G 1 S S S G 1 SOIC−8 FLAT LEAD CASE 488AA STYLE 1 4707N A Y W ZZ D 4707N AYWZZ D D = Specific Device Code = Assembly Location = Year = Work Week = Lot Traceability ORDERING INFORMATION Device Package Shipping† NTMFS4707NT1G SOIC−8 FL 1500 / Tape & Reel (Pb−Free) NTMFS4707NT3G SOIC−8 FL 5000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NTMFS4707N/D NTMFS4707N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Parameter Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 6.5 VGS = 0 V, VDS = 24 V mV/°C TJ = 25°C 1.0 TJ = 125°C 50 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA ±100 mA nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance VGS(TH)/TJ 2.5 5.0 RDS(on) Forward Transconductance 1.0 gFS V mV/°C VGS = 10 V, ID = 10 A 10 13 mW VGS = 4.5 V, ID = 8.0 A 13.5 17 VDS = 15 V, ID = 10 A 20 S 735 pF CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 80 Total Gate Charge QG(TOT) 7.5 Threshold Gate Charge QG(TH) 1.1 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 3.6 RG 2.4 W td(on) 6.0 ns tr 5.0 Gate Resistance VGS = 0 V, f = 1.0 MHz, VDS = 24 V VGS = 4.5 V, VDS = 15 V; ID = 10 A 295 15 nC 2.0 SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(off) VGS = 10 V, VDD = 15 V, ID = 1.0 A, RG = 3.0 W tf 19 11 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 6.25 A TJ = 25°C 0.79 TJ = 125°C 0.59 26 VGS = 0 V, dIS/dt = 100 A/ms, IS = 6.25 A QRR http://onsemi.com 2 V ns 14 12 19 3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. 1.0 nC NTMFS4707N TYPICAL CHARACTERIZATIONS 36 TJ = 25°C VGS = 10 V 4.5 V 25 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 30 4V 20 3.8 V 3.4 V 15 3V 2.8 V 10 2.6 V 5 VDS ≥ 10 V 30 24 18 TJ = 125°C 12 TJ = 25°C TJ = −55°C 6 2.4 V 0 0 1 2 3 0 5 4 0 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 0.020 VGS = 10 V TJ = 125°C 0.015 TJ = 25°C 0.010 TJ = −55°C 0.005 0 0 5 10 20 15 ID, DRAIN CURRENT (AMPS) 25 30 0.018 VGS = 4.5 V VGS = 10 V 0.010 0.006 0.002 0 12 16 20 24 ID, DRAIN CURRENT (AMPS) 100000 VGS = 0 V IDSS, LEAKAGE (nA) ID = 17 A VGS = 10 V 1.6 8 Figure 4. On−Resistance vs. Drain Current and Gate Voltage 2.0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) TJ = 25°C 0.014 Figure 3. On−Resistance vs. Drain Current and Temperature 1.8 5 Figure 2. Transfer Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) Figure 1. On−Region Characteristics 1 2 3 4 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 10000 1.4 1.2 1.0 TJ = 150°C 1000 TJ = 125°C 0.8 0.6 −50 −25 0 25 50 75 100 125 150 100 0 TJ, JUNCTION TEMPERATURE (°C) 5 10 15 20 25 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 30 NTMFS4707N 1600 VDS = 0 V C, CAPACITANCE (pF) 1400 VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERIZATIONS TJ = 25°C VGS = 0 V CISS 1200 CRSS 1000 CISS 800 COSS 600 400 CRSS 200 0 10 5 0 VGS 5 10 15 20 25 5 VGS = 4.5 V 4 QGS 2 1 0 ID = 10 A TJ = 25°C 0 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) 100 18 IS, SOURCE CURRENT (AMPS) t, TIME (ns) 10 tr tf 1 1 10 RG, GATE RESISTANCE (OHMS) 9 6 3 0 10 ms 100 ms 10 1 ms 10 ms 1 0.1 0.01 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 1 dc 10 0.4 0.2 0.6 0.8 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) 1 Figure 10. Diode Forward Voltage vs. Current 100 EAS, SINGLE PULSE DRAIN−TO−SOURCE AVALANCHE ENERGY (mJ) ID, DRAIN CURRENT (AMPS) 100 VGS = 20 V SINGLE PULSE TC = 25°C 10 12 Figure 9. Resistive Switching Time Variation vs. Gate Resistance 1000 4 6 8 QG, TOTAL GATE CHARGE (nC) VGS = 0 V TJ = 25°C 15 0 100 2 Figure 8. Gate−To−Source and Drain−To−Source Voltage vs. Total Charge Figure 7. Capacitance Variation td(off) td(on) QGD 3 VDS VDD = 15 V ID = 1 A VGS = 4.5 V QT 350 300 ID = 7 A 250 200 150 100 50 0 25 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 50 75 100 125 TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 4 150 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N 1 DATE 25 JUN 2018 SCALE 2:1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 2 q E c 1 2 3 A1 4 TOP VIEW C DETAIL A 0.10 C SEATING PLANE A 0.10 C SIDE VIEW MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q GENERIC MARKING DIAGRAM* DETAIL A 1 0.10 b C A B 0.05 c 8X XXXXXX AYWZZ e/2 e L 1 4 K RECOMMENDED SOLDERING FOOTPRINT* E2 PIN 5 (EXPOSED PAD) L1 M 2X 0.495 4.560 2X 1.530 G D2 2X BOTTOM VIEW XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 0.475 3.200 4.530 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 1.330 STYLE 2: 2X PIN 1. ANODE 0.905 2. ANODE 3. ANODE 4. NO CONNECT 0.965 5. CATHODE 1 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON14036D DFN5 5x6, 1.27P (SO−8FL) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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