NTMFS4897NFT1G

NTMFS4897NF Power MOSFET Features 30 V, 171 A, Single N−Channel, SO−8 FL • • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Includes Schottky Diode Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Device http://onsemi.com Applications V(BR)DSS 30 V RDS(ON) MAX 2.0 mW @ 10 V 3.0 mW @ 4.5 V ID MAX 171 A • CPU Power Delivery • DC−DC Converters • Low Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA v 10 sec Power Dissipation RqJA, t v 10 sec Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Current tp=10ms Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TC = 25°C TC = 85°C TC = 25°C TA = 25°C TA = 25°C PD IDM IDmaxpkg TJ, TSTG IS dV/dt EAS PD ID PD ID PD ID Symbol VDSS VGS ID Value 30 ±20 29 21 2.74 47 34 7.3 17 12 0.95 171 123 96.2 288 100 −55 to +150 120 6 375 W A A °C A V/ns mJ W A W A W A Unit V V A N−CHANNEL MOSFET D G S MARKING DIAGRAM D 1 SO−8 FLAT LEAD CASE 488AA STYLE 1 S S S G 4897NF AYWWG G D D D A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) Current limited by package Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source dV/dt ORDERING INFORMATION Device NTMFS4897NFT1G NTMFS4897NFT3G Package SO−8FL (Pb−Free) SO−8FL (Pb−Free) Shipping† 1500 / Tape & Reel 5000 / Tape & Reel Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 V, VGS = 10 V, IL = 50 Apk, L = 0.3 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2010 June, 2010 − Rev. 1 1 Publication Order Number: NTMFS4897NF/D NTMFS4897NF THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction−to−Case (Drain) Junction−to−Ambient – Steady State (Note 1) Junction−to−Ambient – Steady State (Note 2) Junction−to−Ambient − t v 10 sec 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. Symbol RqJC RqJA RqJA RqJA Value 1.3 45.7 132.1 17.2 °C/W Unit ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance VGS(TH) VGS(TH)/TJ RDS(on) VGS = 10 V VGS = 4.5 V Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge Total Gate Charge SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) tf VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W 26 24 36 13 ns CISS COSS CRSS QG(TOT) QG(TH) QGS QGD QG(TOT) VGS = 10 V, VDS = 15 V, ID = 23 A VGS = 4.5 V, VDS = 15 V; ID = 23 A VGS = 0 V, f = 1 MHz, VDS = 15 V 5660 1150 495 40.2 6.4 15.3 13.4 83.6 nC nC pF gFS ID = 22 A ID = 20 A ID = 20 A ID = 18 A VDS = 15 V, ID = 15 A VGS = VDS, ID = 1.0 mA 1.5 2.0 4 1.3 1.3 2.0 2.0 90 S 3.0 2.0 mW 2.5 V mV/°C V(BR)DSS V(BR)DSS/ TJ IDSS IGSS VGS = 0 V, VDS = 24 V TJ = 25 °C VGS = 0 V, ID = 1.0 mA 30 28.5 60 500 ±100 V mV/°C mA nA Symbol Test Condition Min Typ Max Unit VDS = 0 V, VGS = ±20 V 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTMFS4897NF ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD tRR ta tb QRR LS LD LG RG TA = 25°C VGS = 0 V, dIS/dt = 100 A/ms, IS = 23 A VGS = 0 V, IS = 2.0 A TJ = 25°C TJ = 125°C 0.35 0.26 39.1 20.1 19 34 nC ns 0.70 V td(ON) tr td(OFF) tf VGS = 10 V, VDS = 15 V, ID = 15 A, RG = 3.0 W 15.7 21.2 44.6 14.5 ns Symbol Test Condition Min Typ Max Unit Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge PACKAGE PARASITIC VALUES Source Inductance Drain Inductance Gate Inductance Gate Resistance 0.66 0.20 1.5 0.7 2.0 nH W 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3 NTMFS4897NF TYPICAL PERFORMANCE CURVES 300 280 260 240 220 200 180 160 140 120 100 80 60 40 20 0 4.2 V thru 10 V TJ = 25°C VGS = 4.0 V 3.8 V 3.6 V 3.4 V 3.2 V 3.0 V 2.8 V 0 1 2 3 4 5 ID, DRAIN CURRENT (A) 300 280 260 240 220 200 180 160 140 120 100 80 60 40 20 0 VDS = 10 V ID, DRAIN CURRENT (A) TJ = 25°C TJ = 125°C TJ = −55°C 1 1.5 2 2.5 3 3.5 4 4.5 5 VGS, GATE−TO−SOURCE VOLTAGE (V) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.010 0.008 0.006 0.004 0.002 0 ID = 20 A TJ = 25°C RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.0035 Figure 2. Transfer Characteristics TJ = 25°C 0.0030 0.0025 VGS = 4.5 V 0.0020 0.0015 VGS = 10 V 0.0010 0.0005 0 10 30 50 70 90 110 130 150 170 190 210 2 3 4 5 6 7 8 9 10 VGS, GATE−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 −50 ID = 20 A VGS = 10 V IDSS, LEAKAGE (A) 1.0E−01 1.0E−02 Figure 4. On−Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 150°C TJ = 125°C 1.0E−03 1.0E−04 1.0E−05 1.0E−06 TJ = 25°C −25 0 25 50 75 100 125 150 5 10 15 20 25 30 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 4 NTMFS4897NF TYPICAL PERFORMANCE CURVES VGS, GATE−TO−SOURCE VOLTAGE (V) 8000 7000 C, CAPACITANCE (pF) 6000 5000 4000 3000 2000 1000 0 0 Crss 4 8 12 16 20 24 Coss 28 VGS = 0 V TJ = 25°C Ciss 11 10 9 8 7 6 5 4 3 2 1 0 Qgs Qgd ID = 30 A TJ = 25°C VDD = 15 V VGS = 30 A 0 10 40 50 20 30 60 70 QG, TOTAL GATE CHARGE (nC) 80 QT VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Capacitance Variation 1000 30 IS, SOURCE CURRENT (A) 25 20 15 10 5 0 Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge VDD = 15 V ID = 15 A VGS = 10 V td(off) tf tr td(on) VGS = 0 V TJ = 25°C t, TIME (ns) 100 10 1 1 10 RG, GATE RESISTANCE (W) 100 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance VGS = 30 V Single Pulse TC = 25°C EAS, SINGLE PULSE DRAIN−TO−SOURCE AVALANCHE ENERGY (mJ) 1000 I D, DRAIN CURRENT (A) 100 10 1 0.1 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 400 350 300 250 200 150 100 50 0 Figure 10. Diode Forward Voltage vs. Current ID = 50 A 10 ms 100 ms 1 ms 10 ms dc 0.01 10 1 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 100 25 50 75 150 100 125 TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 5 NTMFS4897NF PACKAGE DIMENSIONS DFN6 5x6, 1.27P (SO8 FL) CASE 488AA−01 ISSUE C 0.20 C D 2 6 2X A B 5 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q MILLIMETERS MIN NOM MAX 1.10 0.90 1.00 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.15 BSC 4.50 4.90 5.10 3.50 −−− 4.22 6.15 BSC 5.50 5.80 6.10 3.45 −−− 4.30 1.27 BSC 0.51 0.61 0.71 0.51 −−− −−− 0.51 0.61 0.71 0.05 0.17 0.20 3.00 3.40 3.80 0_ −−− 12 _ D1 0.20 C E1 2 E c 4X q A1 1 2 3 4 TOP VIEW 3X C SEATING PLANE 0.10 C A 0.10 C SIDE VIEW 8X e DETAIL A DETAIL A SOLDERING FOOTPRINT* 1.270 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 3X b e/2 1 4 0.750 4X 0.10 0.05 CAB c L 1.000 4X 0.965 1.330 0.495 3.200 0.475 2X 2X K E2 L1 6 5 0.905 4.530 2X M G D2 BOTTOM VIEW 1.530 4.560 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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