NTMFS4982NFT3G

NTMFS4982NF MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 207 A Features • • • • • Integrated Schottky Diode Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free and are RoHS Compliant http://onsemi.com V(BR)DSS RDS(ON) MAX 1.3 mW @ 10 V 30 V Server, Netcom, POL Synchronous Rectification for DC−DC Converters Low Side Switching High Performance Applications N−CHANNEL MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Symbol Value Unit VDSS 30 V VGS ±20 V ID 36 A Continuous Drain Current RqJA (Note 1) TA = 25°C Power Dissipation RqJA (Note 1) TA = 25°C PD 2.7 W Continuous Drain Current RqJA v 10 sec TA = 25°C ID 60 A Power Dissipation RqJA, t v 10 sec TA = 25°C Continuous Drain Current RqJA (Note 2) TA = 85°C D (5, 6) S (1, 2, 3) G (4) 26 MARKING DIAGRAM D TA = 85°C Steady State TA = 25°C 43 PD ID TA = 85°C 7.4 W A 26.5 19 Power Dissipation RqJA (Note 2) TA = 25°C PD 1.5 W Continuous Drain Current RqJC (Note 1) TC = 25°C ID 207 A Power Dissipation RqJC (Note 1) TC = 25°C PD 89.3 W TA = 25°C IDM 350 A TA = 25°C IDmaxpkg 100 A TJ, TSTG −55 to +150 °C IS 54 A dV/dt 6 V/ns Pulsed Drain Current 207 A 1.9 mW @ 4.5 V Applications • • • • ID MAX TC = 85°C tp=10ms Current limited by package Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source dV/dt 1 SO−8 FLAT LEAD CASE 488AA STYLE 1 A Y W ZZ S S S G D 4982NF AYWZZ D D = Assembly Location = Year = Work Week = Lot Traceability 149 ORDERING INFORMATION Device Package Shipping† NTMFS4982NFT1G SO−8FL (Pb−Free) 1500 / Tape & Reel NTMFS4982NFT3G SO−8FL (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 May, 2019 − Rev. 3 1 Publication Order Number: NTMFS4982NF/D NTMFS4982NF MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 V, VGS = 10 V, IL = 50 Apk, L = 0.1 mH, RG = 25 W) EAS 125 mJ TL 260 °C Lead Temperature for Soldering Purposes (1/8” from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. http://onsemi.com 2 NTMFS4982NF THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Junction−to−Case (Drain) Parameter RqJC 1.4 Junction−to−Ambient – Steady State (Note 1) RqJA 46.6 Junction−to−Ambient – Steady State (Note 2) RqJA 84.1 Junction−to−Ambient − t v 10 sec RqJA 16.8 Unit °C/W 1. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size of 100 mm2. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min 30 Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 1.0 mA Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ ID = 10 mA, referenced to 25°C Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current IGSS VGS = 0 V, VDS = 24 V V 15 TJ = 25°C mV/°C 500 VDS = 0 V, VGS = ±20 V ±100 mA nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance VGS(TH) VGS = VDS, ID = 1.0 mA VGS(TH)/TJ ID = 10 mA, referenced to 25°C RDS(on) 1.0 1.7 2.2 5.0 VGS = 10 V ID = 25 A 0.95 1.3 VGS = 4.5 V ID = 25 A 1.4 1.9 gFS VDS = 1.5 V, ID = 15 A 60 V mV/°C mW S CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 160 Total Gate Charge QG(TOT) 40 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Total Gate Charge 6000 VGS = 0 V, f = 1 MHz, VDS = 15 V VGS = 4.5 V, VDS = 15 V; ID = 25 A 2400 8.8 15 pF nC 12 QG(TOT) VGS = 10 V, VDS = 15 V, ID = 25 A 84 nC SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) 17.2 tr td(OFF) VGS = 4.5 V, VDS = 15 V, ID = 25 A, RG = 3 W 31.6 34.3 tf 12 td(ON) 12.7 tr td(OFF) VGS = 10 V, VDS = 15 V, ID = 25 A, RG = 3 W tf 20.4 38.6 ns ns 11.3 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3 NTMFS4982NF ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max TJ = 25°C 0.4 0.7 TJ = 125°C 0.32 Unit DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD VGS = 0 V, IS = 2 A tRR ta tb V 58 VGS = 0 V, dIS/dt = 100 A/ms, IS = 25 A 29 ns 29 QRR 71 nC Source Inductance LS 0.65 nH Drain Inductance LD Gate Inductance LG Gate Resistance RG PACKAGE PARASITIC VALUES TA = 25°C 0.20 1.5 0.8 W Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 4 NTMFS4982NF TYPICAL CHARACTERISTICS 3.2 V 120 105 90 3.0 V 75 60 45 2.8 V 30 15 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 180 ID, DRAIN CURRENT (A) 135 200 3.4 V 3.6 V to 10 V 2.6 V 2.4 V 0 1 3 2 140 120 100 80 60 40 TJ = −55°C TJ = 25°C 1.0 1.5 2.0 3.0 2.5 3.5 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics ID = 25 A TJ = 25°C 0.010 0.008 0.006 4.0 2.0E−03 TJ = 25°C 1.75E−03 VGS = 4.5 V 1.5E−03 1.25E−03 0.004 0.002 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 VGS, GATE−TO−SOURCE VOLTAGE (V) 10 VGS = 10 V 1.0E−03 7.5E−04 5.0E−04 10 20 40 50 60 70 80 90 100 110 120 Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.8 1E−01 VGS = 0 V TJ = 125°C 1E−02 IDSS, LEAKAGE (A) 1.7 ID = 20 A 1.6 VGS = 10 V 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 −50 −25 0 30 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. VGS RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) TJ = 125°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.012 0 160 0 5 4 VDS = 5 V 20 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 150 1E−03 1E−04 25 50 75 100 125 150 1E−05 TJ = 25°C 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 5 30 NTMFS4982NF 8000 C, CAPACITANCE (pF) 7000 VGS = 0 V TJ = 25°C Ciss 6000 VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS 5000 4000 Coss 3000 2000 1000 0 Crss 0 5 10 15 20 25 QT 10 9 8 7 6 5 Qgd Qgs 4 TJ = 25°C VDD = 15 V VGS = 10 V ID = 25 A 3 2 1 0 0 10 20 30 40 50 60 70 90 80 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 10 10000 VDD = 15 V ID = 10 A VGS = 10 V 9 IS, SOURCE CURRENT (A) 1000 t, TIME (ns) 11 td(off) tf 100 tr td(on) 10 VGS = 0 V 8 7 6 5 4 TJ = 25°C 3 2 1 1 1 10 0.3 0.4 0.5 0.6 0.7 Figure 10. Diode Forward Voltage vs. Current EAS, SINGLE PULSE DRAIN−TO− SOURCE AVALANCHE ENERGY (mJ) ID, DRAIN CURRENT (A) 0.2 Figure 9. Resistive Switching Time Variation vs. Gate Resistance 100 100 ms 1 ms 10 0.01 0.1 0.1 VSD, SOURCE−TO−DRAIN VOLTAGE (V) 10 ms 0.1 0 RG, GATE RESISTANCE (W) 1000 1 0 100 10 ms VGS = 20 V Single Pulse TC = 25°C RDS(on) Limit Thermal Limit Package Limit dc 1 10 100 130 120 110 100 90 80 70 60 50 40 30 20 10 0 ID = 50 A 25 50 75 100 125 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 6 150 NTMFS4982NF TYPICAL CHARACTERISTICS 100 R(t) (°C/W) Duty Cycle = 50% 10 20% 10% 5% 1 2% 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.1 0.01 PULSE TIME (sec) Figure 13. Thermal Response http://onsemi.com 7 1 10 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N 1 DATE 25 JUN 2018 SCALE 2:1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 2 q E c 1 2 3 A1 4 TOP VIEW C DETAIL A 0.10 C SEATING PLANE A 0.10 C SIDE VIEW MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q GENERIC MARKING DIAGRAM* DETAIL A 1 0.10 b C A B 0.05 c 8X XXXXXX AYWZZ e/2 e L 1 4 K RECOMMENDED SOLDERING FOOTPRINT* E2 PIN 5 (EXPOSED PAD) L1 M 2X 0.495 4.560 2X 1.530 G D2 2X BOTTOM VIEW XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 0.475 3.200 4.530 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 1.330 STYLE 2: 2X PIN 1. ANODE 0.905 2. ANODE 3. ANODE 4. NO CONNECT 0.965 5. CATHODE 1 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON14036D DFN5 5x6, 1.27P (SO−8FL) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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