NTMFS4H013NFT1G

NTMFS4H013NF MOSFET – Power, Single, N-Channel, SO-8FL 25 V, 269 A Features • • • • • Integrated Schottky Diode Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com VGS MAX RDS(on) TYP QGTOT 4.5 V 1.4 mW 26 nC 10 V 0.9 mW 56 nC Applications • • • • High Performance DC-DC Converters System Voltage Rails Netcom, Telecom Servers & Point of Load PIN CONNECTIONS SO8−FL (5 x 6 mm) MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Units Drain-to-Source Voltage VDSS 25 V Gate-to-Source Voltage VGS ±20 V Continuous Drain Current RqJA (TA = 25°C, Note 1) ID 43 A Power Dissipation RqJA (TA = 25°C, Note 1) PD 2.70 W Continuous Drain Current RqJC (TC = 25°C, Note 1) ID 269 A Power Dissipation RqJC (TC = 25°C, Note 1) PD 104 W Pulsed Drain Current (tp = 10 ms) IDM 505 A Single Pulse Drain-to-Source Avalanche Energy (Note 1) (IL = 51 Apk, L = 0.3 mH) EAS 390 mJ Drain to Source dV/dt (Bottom View) N−CHANNEL MOSFET D (5−8) S (1, 2, 3) G (4) dV/dt 7 V/ns TJ(max) 150 °C Storage Temperature Range TSTG −55 to 150 °C Lead Temperature Soldering Reflow (SMD Styles Only), Pb-Free Versions (Note 2) TSLD 260 °C Maximum Junction Temperature (Top View) ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Values based on copper area of 645 mm2 (or 1 in2) of 2 oz copper thickness and FR4 PCB substrate. 2. For more information, please refer to our Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 3. This is the absolute maximum rating. Parts are 100% UIS tested at TJ = 25°C, VGS = 10 V, IL = 33 A, EAS = 164 mJ. © Semiconductor Components Industries, LLC, 2014 May, 2019 − Rev. 1 1 Publication Order Number: NTMFS4H013NF/D NTMFS4H013NF THERMALCHARACTERISTICS Parameter Thermal Resistance, Junction-to-Ambient (Note 1 and 4) Junction-to-Case (Note 1 and 4) Symbol Max RqJA RqJC 40.0 1.5 Units °C/W 4. Thermal Resistance RqJA and RqJC as defined in JESD51−3. www.onsemi.com 2 NTMFS4H013NF ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 1.0 mA 25 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS V 34.5 VGS = 0 V, VDS = 20 V Zero Gate Voltage Drain Current IDSS TJ = 25 °C Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = +20 V VGS(TH) VGS = VDS, ID = 1.0 mA mV/°C 500 mA +100 nA 2.1 V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance Forward Transconductance RDS(on) 1.2 4.6 mV/°C VGS = 10 V ID = 30 A 0.72 0.9 VGS = 4.5 V ID = 30 A 1.1 1.4 gFS VDS = 12 V, ID = 15 A 119 mW S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 114 Total Gate Charge QG(TOT) 26 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Total Gate Charge Gate Resistance 3923 VGS = 0 V, f = 1 MHz, VDS = 12 V VGS = 4.5 V, VDS = 12 V; ID = 30 A 2537 pF 2.9 nC 10.7 5.8 QG(TOT) VGS = 10 V, VDS = 12 V; ID = 30 A 56 nC RG TA = 25°C 1.0 W SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 17.6 VGS = 4.5 V, VDD = 12 V, ID = 15 A, RG = 3.0 W tf 55.1 ns 29.4 9.96 SWITCHING CHARACTERISTICS, VGS = 10 V (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 11.3 VGS = 10 V, VDD = 12 V, ID = 15 A, RG = 3.0 W tf 44.2 ns 39.2 7.1 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 2.0 A TJ = 25°C 0.38 TJ = 125°C 0.297 0.6 V 61.3 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A QRR 30.4 ns 30.9 66 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 3 NTMFS4H013NF TYPICAL CHARACTERISTICS VGS = 10 V to 3.0 V VGS = 2.8 V −ID, DRAIN CURRENT (A) 140 120 100 VGS = 2.6 V 80 60 40 VGS = 2.4 V 0 VGS = 2.0 V 120 100 80 TJ = 125°C 60 TJ = 25°C 40 0 0.5 1.0 1.5 2.0 2.5 0 3.0 0 2.5 2.0 1.5 1.0 0.5 3 4 5 6 7 8 9 10 VGS, GATE VOLTAGE (V) 2.5 3.0 3.5 4.0 VGS = 4.5 V 1.1 1.0 TJ = 25°C 0.9 0.8 VGS = 10 V 0.7 0.6 20 40 60 80 100 140 120 160 −ID, DRAIN CURRENT (A) Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.8 1E−01 ID = 30 A VGS = 10 V TJ = 150°C 1E−02 1.5 TJ = 125°C −IDSS, LEAKAGE (A) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE (W) 2.0 1.2 Figure 3. On−Resistance vs. Gate−to−Source Voltage 1E−03 1.4 1.3 TJ = 85°C 1E−04 1.2 1.1 1E−05 1.0 0.9 0.8 0.7 −50 1.5 Figure 2. Transfer Characteristics 3.0 1.6 1.0 Figure 1. On−Region Characteristics TJ = 25°C ID = 30 A 1.7 0.5 VGS, GATE−TO−SOURCE VOLTAGE (V) 3.5 2 TJ = −55°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) 4.0 0 VDS ≤ 10 V 140 20 20 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 160 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) −ID, DRAIN CURRENT (A) 160 TJ = 25°C 1E−06 −25 0 25 50 75 100 125 150 1E−07 5 10 15 20 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 4 25 NTMFS4H013NF TYPICAL CHARACTERISTICS Ciss 4000 3500 3000 Coss TJ = 25°C VGS = 12 V f = 1 MHz 2500 2000 1500 1000 Crss 0 1000 5 10 15 20 25 t, TIME (ns) ID, DRAIN CURRENT (A) Qgs 4 Qgd TJ = 25°C VDS = 12 V ID = 30 A 2 0 0 8 16 24 32 40 td(off) tf tr 1 56 48 160 VDS = 12 V ID = 15 A VGS = 10 V 10 140 120 TJ = 125°C 100 TJ = 25°C 80 60 TJ = −55°C 40 20 0 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 10 ms 100 100 ms 1 ms 10 0.01 6 Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 10 0.1 8 Figure 7. Capacitance Variation td(on) 1 QT Qg, TOTAL GATE CHARGE (nC) 100 1 10 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) IS, SOURCE CURRENT (A) 500 0 10 ms 0 V ≤ VGS ≤ 10 V Single Pulse TA = 25°C TJ = 150°C RDS(on) Limit Thermal Limit Package Limit 0.01 0.1 1 dc 10 EAS, SINGLE PULSE DRAIN−TO− SOURCE AVALANCHE ENERGY (mJ) C, CAPACITANCE (pF) 4500 −VGS, GATE−TO−SOURCE VOLTAGE (V) 5000 100 180 160 140 ID = 33 A 120 100 80 60 40 20 0 25 50 75 100 125 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature www.onsemi.com 5 150 NTMFS4H013NF TYPICAL CHARACTERISTICS 100 R(t) (°C/W) 50% Duty Cycle 10 20% 10% 5% 2% 1% 1 PCB Cu Area 645.16 mm2 PCB Cu thk 2 oz 0.1 0.01 Single Pulse 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 100 10 1000 PULSE TIME (sec) Figure 13. Thermal Characteristics 1000 250 ID, DRAIN CURRENT (A) GFS, TRANSCONDUCTANCE (S) 300 200 150 100 50 0 0 20 40 60 80 100 120 100 10 1 140 1E−07 1E−06 1E−05 1E−04 1E−03 ID, DRAIN CURRENT (A) PULSE WIDTH (sec) Figure 14. GFS vs. ID Figure 15. Avalanche Characteristics 1E−02 ORDERING INFORMATION Package Shipping† NTMFS4H013NFT1G SO8−FL (Pb-Free) 1500 / Tape & Reel NTMFS4H013NFT3G SO8−FL (Pb-Free) 5000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MARKING DIAGRAM D 1 SO−8 FLAT LEAD CASE 488AA STYLE 1 S S S G H13NF AYWZZ D D D www.onsemi.com 6 A Y W ZZ = Assembly Location = Year = Work Week = Lot Traceability MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N 1 DATE 25 JUN 2018 SCALE 2:1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 2 q E c 1 2 3 A1 4 TOP VIEW C DETAIL A 0.10 C SEATING PLANE A 0.10 C SIDE VIEW MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q GENERIC MARKING DIAGRAM* DETAIL A 1 0.10 b C A B 0.05 c 8X XXXXXX AYWZZ e/2 e L 1 4 K RECOMMENDED SOLDERING FOOTPRINT* E2 PIN 5 (EXPOSED PAD) L1 M 2X 0.495 4.560 2X 1.530 G D2 2X BOTTOM VIEW XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 0.475 3.200 4.530 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 1.330 STYLE 2: 2X PIN 1. ANODE 0.905 2. ANODE 3. ANODE 4. NO CONNECT 0.965 5. CATHODE 1 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON14036D DFN5 5x6, 1.27P (SO−8FL) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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