NTMJS0D7N03CGTWG

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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Other names and brands may be claimed as the property of others. MOSFET - Power, Single N-Channel, LFPAK8 30 V, 0.65 mW, 410 A NTMJS0D7N03CG Features • Wide SOA to Improve Inrush Current Management • Advanced LFPAK Package (5x6mm) with Excellent Thermal • • www.onsemi.com Conduction Ultra Low RDS(on) to Improve System Efficiency These Devices are Pb−Free, Halogen/BFR−Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 30 V 0.65 mW @ 10 V 410 A Typical Applications • • • • D (5−8) Hot Swap Application Motor Drive Power Load Switch Battery Management G (4) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V ID 410 A Parameter Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 1, 2) Power Dissipation RqJA (Notes 1, 2) TC = 25°C Steady State Steady State TC = 100°C PD 188 W TA = 25°C ID 59 A TA = 100°C 42 PD 4.0 W TA = 25°C, tp = 10 ms IDM 900 A TJ, Tstg −55 to +175 °C Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 40.8 A) EAS 1080 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using a 1 in2, 2 oz. Cu pad. 2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. © Semiconductor Components Industries, LLC, 2020 February, 2021 − Rev. 0 MARKING DIAGRAM D TC = 25°C Operating Junction and Storage Temperature Range N−CHANNEL MOSFET 290 TA = 25°C Pulsed Drain Current S (1,2,3) 1 D D D 0D7N03 CG AWLYW LFPAK8 CASE 760AA 1 S S S G 0D7N03CG = Specific Device Code A = Assembly Location WL = Wafer Lot Y = Year W = Work Week ORDERING INFORMATION See detailed ordering, marking and shipping information on page 5 of this data sheet. Publication Order Number: NTMJS0D7N03CG/D NTMJS0D7N03CG THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Unit Junction−to−Case − Steady State (Note 1) Parameter RqJC 0.8 °C/W Junction−to−Ambient − Steady State (Note 1) RqJA 38 Junction−to−Ambient − Steady State (Note 2) RqJA 134 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ ID = 250 mA, ref to 25°C Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current VGS = 0 V, VDS = 30 V V 11 mV/°C TJ = 25°C 1.0 TJ = 125°C 100 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 280 mA VGS(TH)/TJ ID = 280 mA, ref to 25°C mA 100 nA 2.2 V ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Threshold Temperature Coefficient Drain−to−Source On Resistance RDS(on) VGS = 10 V ID = 30 A 1.3 −5.1 0.55 mV/°C 0.65 mW Forward Transconductance gFS VDS = 3 V, ID = 30 A 100 S Gate Resistance RG TA = 25°C 0.4 W CHARGES & CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance 12300 VGS = 0 V, VDS = 15 V, f = 1 MHz 5800 CRSS 88 Total Gate Charge QG(TOT) 147 Threshold Gate Charge QG(TH) Gate−to−Drain Charge QGD Gate−to−Source Charge QGS 34 td(ON) 28 VGS = 10 V, VDS = 15 V; ID = 30 A pF 19 nC 8.6 SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = 10 V, VDS = 15 V, ID = 30 A, RG = 3 W tf 13 ns 85 16 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Reverse Recovery Charge QRR VGS = 0 V, IS = 30 A TJ = 25°C 0.78 TJ = 125°C 0.62 VGS = 0 V, VR = 15 V, IS = 30 A, dIS/dt = 100 A/ms 1.2 V 98 ns 143 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTMJS0D7N03CG TYPICAL CHARACTERISTICS 500 350 ID, DRAIN CURRENT (A) 400 450 5.0 V 5.5 V 4.5 V 300 250 4.0 V 200 3.5 V 150 100 3.0 V 50 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 0 0 0.5 1.5 1.0 2.0 2.5 350 TJ = 25°C 300 250 200 TJ = 125°C 150 100 0 4 Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics ID = 30 A TJ = 25°C 4 3 2 1 4 5 6 7 8 9 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 1.0 TJ = 25°C 0.8 0.6 VGS = 10 V 0.4 0.2 5 10 15 25 20 1E+05 35 40 45 50 TJ = 175°C TJ = 150°C 1E+04 TJ = 125°C IDSS, LEAKAGE (nA) 1.5 TJ = 85°C 1E+03 1.0 TJ = 25°C 1E+02 0.5 0 30 ID, DRAIN CURRENT (A) ID = 30 A VGS = 10 V −25 5 Figure 4. On−Resistance vs. Drain Current and Gate Voltage 2.0 0.2 −50 3 2 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 3. On−Resistance vs. Gate−to−Source Voltage RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 5 3 400 0 3.0 6 0 TJ = −55°C VDS = 10 V 50 2.5 V RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 500 VGS = 6 to 10 V 450 25 50 75 100 125 150 175 1E+01 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 30 NTMJS0D7N03CG TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 100K Ciss 10K Coss 1K 10 VGS = 0 V TJ = 25°C f = 1 MHz 0 1000 Crss 5 10 15 20 25 100 4 Qgd Qgs 3 2 1 0 0 30 100 td(off) VDS = 15 V ID = 30 A VGS = 10 V tf tr td(on) 1 10 60 120 90 150 VGS = 0 V 10 1 0.1 100 TJ = 125°C 0.3 0.4 TJ = 25°C 0.5 TJ = −55°C 0.6 0.7 0.8 0.9 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 VGS ≤ 10 V Single Pulse TC = 25°C 10 ms 100 ms 1 ms 0.1 5 Figure 8. Gate−to−Source vs. Total Charge 10 1 6 10 ms 100 ms 1s RDS(on) Limit Thermal Limit Package Limit 0.01 0.1 1 TJ(initial) = 100°C 10 100 10 TJ(initial) = 25°C IPEAK, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 1000 7 Figure 7. Capacitance Variation 10 1 8 Qg, TOTAL GATE CHARGE (nC) 100 t, TIME (ns) 30 TJ = 25°C VDS = 15 V ID = 30 A 9 VDS, DRAIN−TO−SOURCE VOLTAGE (V) IS, SOURCE CURRENT (A) 100 10 0.0001 0.001 0.01 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TAV, TIME IN AVALANCHE (s) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Drain Current vs. Time in Avalanche www.onsemi.com 4 NTMJS0D7N03CG TYPICAL CHARACTERISTICS 100 R(t) (°C/W) Duty Cycle = 50% 10 20% 10% 5% 1 2% 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.1 0.01 1 10 100 1000 t, PULSE TIME (s) Figure 13. Thermal Response DEVICE ORDERING INFORMATION Device NTMJS0D7N03CGTWG Marking Package Shipping† 0D7N03 CG LFPAK8 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 NTMJS0D7N03CG PACKAGE DIMENSIONS LFPAK8 5x6 CASE 760AA ISSUE C ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 www.onsemi.com 6 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative