NTMS4176PR2G

NTMS4176P Power MOSFET -30 V, -9.6 A, P-Channel, SOIC-8 Features • • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board Space This is a Pb-Free Device http://onsemi.com V(BR)DSS -30 V RDS(on) Max 18 mW @ -10 V 30 mW @ -4.5 V ID Max -9.6 A Applications • Load Switches • Notebook PC's • Desktop PC's MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Rating Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJA t < 10 s (Note 1) Power Dissipation RqJA t < 10 s (Note 1) Pulsed Drain Current TA = 25°C TA = 70°C TA = 25°C TA = 25°C Steady State TA = 70°C TA = 25°C TA = 25°C TA = 70°C TA = 25°C TA = 25°C, tp = 10 ms PD IDM TJ, TSTG IS EAS PD ID PD ID Symbol VDSS VGS ID Value -30 ±25 -7.3 -5.8 1.44 -5.5 -4.4 0.81 -9.6 -7.7 2.5 -39 -55 to +150 -2.1 112.5 W A °C A mJ W A 8 1 W A Unit V V A G P-Channel D S MARKING DIAGRAM & PIN ASSIGNMENT DDDD 8 SOIC-8 CASE 751 STYLE 12 1 SSSG 4176P AYWW G Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain-to-Source Avalanche Energy TJ = 25°C, VDD = 30 V, VGS = 10 V, IL = 15 Apk, L = 1.0 mH, RG = 25 W Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) 4176P A Y WW G = Device Code = Assembly Location = Year = Work Week = Pb-Free Package ORDERING INFORMATION Device Package SOIC-8 (Pb-Free) Shipping† 2500/Tape & Reel TL 260 °C NTMS4176PR2G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface-mounted on FR4 board using 1 inch sq pad size, 1 oz Cu. 2. Surface-mounted on FR4 board using the minimum recommended pad size. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2008 1 March, 2008 - Rev. 0 Publication Order Number: NTMS4176P/D NTMS4176P THERMAL RESISTANCE RATINGS Rating Junction-to-Ambient – Steady State (Note 3) Junction-to-Ambient – t≤10 s (Note 3) Junction-to-FOOT (Drain) Junction-to-Ambient – Steady State (Note 4) Symbol RqJA RqJA RqJF RqJA Max 87 50 22 154 °C/W Unit 3. Surface-mounted on FR4 board using 1 inch sq pad size, 1 oz Cu. 4. Surface-mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)jk Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Tem‐ perature Coefficient Zero Gate Voltage Drain Current Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coeffi‐ cient Drain-to-Source On Resistance Forward Transconductance VGS(TH) VGS(TH)/TJ RDS(on) gFS VGS = -10 V VGS = -4.5 V CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge Gate Resistance SWITCHING CHARACTERISTICS (Note 6) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time DRAIN-TO-SOURCE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Time VSD tRR Ta Tb QRR VGS = 0 V, dIS/dt = 100 A/ms, IS = -2.1 A VGS = 0 V ID = -2.1 A TJ = 25°C TJ = 125°C -0.75 0.59 32.4 14 18.4 23 nC ns -1.0 V td(ON) tr td(OFF) tf VGS = -10 V, VDD = -15 V, ID = -1.0 A, RG = 6.0 W 15 9.0 19.5 42.5 ns CISS COSS CRSS QG(TOT) QG(TH) QGS QGD QG(TOT) RG VGS = -10 V, VDS = -15 V, ID = -9.6 A, VGS = -4.5 V, VDS = -15 V, ID = -9.6 A 1720 VGS = 0 V, f = 1.0 MHz, VDS = -24 V 370 256 17 2.0 6.0 8.4 32.6 3.0 4.5 nC W nC pF ID = -9.6 A ID = -7.5 A VGS = VDS, ID = -250 mA -1.5 6.0 14 23 21.5 18 30 -2.5 V mV/°C mW S V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS = 0 V, VDS = -24 V TJ = 25°C TJ = 85°C VGS = 0 V, ID = -250 mA -30 29 -1.0 -5.0 ±100 V mV/°C mA nA Symbol Test Condition Min Typ Max Unit VDS = 0 V, VGS = ±25 V VDS = -1.5 V, ID = -9.6 A 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTMS4176P TYPICAL PERFORMANCE CURVES 20 -ID, DRAIN CURRENT (AMPS) -ID, DRAIN CURRENT (AMPS) 18 16 14 12 10 8 6 4 2 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) -3.0 V -2.8 V -3.8 V -3.2 V -10V -5 V -4.5 V -4.2 V -4 V TJ = 25°C -3.6 V -3.4 V 20 18 16 14 12 10 8 6 4 2 0 1.5 2.5 TJ = 125°C TJ = 25°C TJ = -55°C 3.5 4.5 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) VDS ≥ 10 V Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.13 0.11 0.09 0.07 0.05 0.03 0.01 TJ = 25°C ID = -9.6 A RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.030 Figure 2. Transfer Characteristics TJ = 25°C 0.025 0.020 VGS = -4.5 V 0.015 VGS = -10 V 2 4 6 8 10 0.010 2 4 6 8 10 12 14 16 18 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) -ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance vs. Gate-to-Source Voltage 1.6 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) ID = -9.6 A VGS = -10 V -IDSS, LEAKAGE (nA) 1.4 10000 Figure 4. On-Resistance vs. Drain Current and Gate Voltage VGS = 0 V 1.2 TJ = 150°C 1000 1.0 0.8 TJ = 125°C 0.6 -50 100 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) 5 10 15 20 25 30 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 NTMS4176P TYPICAL PERFORMANCE CURVES 2600 TJ = 25°C 2200 C, CAPACITANCE (pF) 1800 1400 1000 Coss 600 200 0 Crss 5 10 15 25 20 DRAIN-TO-SOURCE VOLTAGE (VOLTS) 30 Ciss VGS = 0 V -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 10 9 8 7 6 5 4 3 2 1 0 0 5 ID = -9.6 A TJ = 25°C 25 20 10 15 QG, TOTAL GATE CHARGE (nC) 30 QGS QGD VDS VGS QT 20 18 16 14 12 10 8 6 4 2 0 35 -VDS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation Figure 8. Gate-To-Source and Drain-To-Source Voltage vs. Total Charge 1000 -IS, SOURCE CURRENT (AMPS) VDD = -15 V ID = -1 A VGS = -10 V 100 t, TIME (ns) 4 VGS = 0 V TJ = 25°C 3 td(off) tf tr td(on) 2 10 1 1 1 10 RG, GATE RESISTANCE (OHMS) 100 0 0.5 0.6 0.7 0.8 0.9 -VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation vs. Gate Resistance 100 -ID, DRAIN CURRENT (AMPS) 10 ms 10 100 ms 1 ms 1 VGS = -20 V SINGLE PULSE TC = 25°C RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 10 100 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 10 ms EAS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) 112.5 100 87.5 75 62.5 50 37.5 25 12.5 Figure 10. Diode Forward Voltage vs. Current ID = -15 A 0.1 dc 0.01 0.1 0 25 125 50 75 100 TJ, STARTING JUNCTION TEMPERATURE (°C) 150 Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 4 NTMS4176P PACKAGE DIMENSIONS SOIC-8 NB CASE 751-07 ISSUE AJ -XA 8 5 B 1 4 S 0.25 (0.010) M Y M -YG C -ZH D 0.25 (0.010) M SEATING PLANE K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751-01 THRU 751-06 ARE OBSOLETE. NEW STANDARD IS 751-07. DIM A B C D G H J K M N S MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0_ 8_ 0.010 0.020 0.228 0.244 N X 45 _ 0.10 (0.004) M ZY S J X S SOLDERING FOOTPRINT* 1.52 0.060 STYLE 12: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN 7.0 0.275 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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