NTMYS4D1N06CLTWG

MOSFET – Power, Single, N-Channel 60 V, 4.0 mW, 100 A NTMYS4D1N06CL Features • • • • • www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses LFPAK4 Package, Industry Standard These Devices are Pb−Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 4.0 mW @ 10 V 60 V 100 A 5.7 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage VGS ±20 V ID 100 A Parameter Continuous Drain Current RqJC (Notes 1, 2, 3) Steady State Power Dissipation RqJC (Notes 1, 2) Continuous Drain Current RqJA (Notes 1, 2, 3) TC = 25°C TC = 100°C TC = 25°C TC = 100°C Steady State Power Dissipation RqJA (Notes 1, 2) Pulsed Drain Current TA = 25°C W 79 40 ID TA = 100°C TA = 25°C G (4) 71 PD A 22 PD 1.8 820 A TJ, Tstg −55 to +175 °C IS 100 A Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, IL(pk) = 5 A) EAS 185 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Source Current (Body Diode) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter MARKING DIAGRAM W 3.7 IDM Operating Junction and Storage Temperature Range S (1,2,3) N−CHANNEL MOSFET 15 TA = 100°C TA = 25°C, tp = 10 ms D (5) Symbol Value Unit Junction−to−Case − Steady State RqJC 1.9 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 39 LFPAK4 CASE 760AB 4D1N06CL A WL Y W 4D1N06 CL AWLYW = Specific Device Code = Assembly Location =Wafer Lot = Year = Work Week ORDERING INFORMATION See detailed ordering, marking and shipping information on page 5 of this data sheet. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2019 November, 2019 − Rev. 1 1 Publication Order Number: NTMYS4D1N06CL/D NTMYS4D1N06CL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 60 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 28 VGS = 0 V, VDS = 48 V mV/°C TJ = 25°C 10 TJ = 125°C 250 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 80 mA 100 mA nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance Forward Transconductance RDS(on) 1.2 2.0 −5.4 VGS = 10 V ID = 50 A 3.3 4.0 VGS = 4.5 V ID = 50 A 4.6 5.7 gFS VDS = 15 V, ID = 50 A V mV/°C 105 mW S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 2200 VGS = 0 V, f = 1 MHz, VDS = 25 V 900 pF 17 Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 30 V; ID = 50 A 16 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 30 V; ID = 50 A 34 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Plateau Voltage VGP 2.8 td(ON) 10 1.5 VGS = 4.5 V, VDS = 30 V; ID = 50 A nC 5.6 5.1 V SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = 4.5 V, VDS = 30 V, ID = 50 A, RG = 2.5 W tf 15 ns 24 5.0 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD VGS = 0 V, IS = 50 A TJ = 25°C 0.88 TJ = 125°C 0.78 tRR ta tb 1.2 V 41 VGS = 0 V, dIS/dt = 100 A/ms, IS = 50 A QRR 21 ns 20 32 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTMYS4D1N06CL 3.8 V 140 10 V to 4.5 V 120 3.6 V 100 3.4 V 80 3.2 V 60 3.0 V 40 2.8 V 80 60 40 0 0.5 1.0 1.5 2.0 2.5 0 3.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 10 TJ = 25°C ID = 50 A 9 8 7 6 5 4 3 0 VDS, DRAIN−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) TJ = −55°C 100 20 3 4 5 6 7 8 9 10 VGS, GATE VOLTAGE (V) 4.0 8 TJ = 25°C 7 6 VGS = 4.5 V 5 4 VGS = 10 V 3 2 10 30 50 70 90 110 130 150 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 2.5 100,000 TJ = 125°C VGS = 10 V ID = 50 A 2.0 IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE TJ = 25°C 120 20 0 TJ = 125°C 140 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) TYPICAL CHARACTERISTICS 1.5 1.0 0.5 0 −50 −25 0 25 50 75 100 125 150 175 10,000 TJ = 85°C 1000 100 10 5 15 25 35 45 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 55 NTMYS4D1N06CL C, CAPACITANCE (pF) CISS 2000 1600 VGS = 0 V TJ = 25°C f = 1 MHz COSS 1200 800 400 0 CRSS 0 10 20 30 40 50 60 VGS, GATE−TO−SOURCE VOLTAGE (V) 10 2400 30 QT 25 8 20 6 15 QGD QGS 4 2 0 10 VDS = 30 V TJ = 25°C ID = 25 A 0 4 8 12 16 20 24 28 5 32 0 VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge VDS, DRAIN−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS 1000 td(off) tf 100 t, TIME (ns) IS, SOURCE CURRENT (A) 45 VGS = 4.5 V VDD = 30 V ID = 25 A tr td(on) 10 40 TJ = 125°C 35 30 TJ = 25°C 25 20 15 TJ = −55°C 10 5 1 1 10 0 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 100 TC = 25°C VGS ≤ 10 V 0.01 ms 0.1 ms 10 1 ms 10 ms 10 TJ(initial) = 25°C IPEAK (A) IDS (A) 100 TJ(initial) = 100°C 1 RDS(on) Limit Thermal Limit Package Limit 1 0.1 1 10 0.1 100 1E−04 1E−03 VDS (V) TIME IN AVALANCHE (s) Figure 11. Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche www.onsemi.com 4 1E−02 NTMYS4D1N06CL TYPICAL CHARACTERISTICS 100 RqJA(t) (°C/W) 50% Duty Cycle 10 20% 10% 5% 1 2% 1% 650 mm2, 2 oz., Cu Single Layer Pad 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Characteristics DEVICE ORDERING INFORMATION Device NTMYS4D1N06CLTWG Marking Package Shipping† 4D1N06CL LFPAK4 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS LFPAK4 5x6 CASE 760AB ISSUE C GENERIC MARKING DIAGRAM* XXXXXX XXXXXX AWLYW DOCUMENT NUMBER: DESCRIPTION: 98AON82777G LFPAK4 5x6 XXXXXX A WL Y W DATE 19 NOV 2019 = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week *This information is generic. Please refer to device data sheet for actual part marking. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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