NTP75N03-6G

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Other names and brands may be claimed as the property of others. NTP75N03−06, NTB75N03−06 Power MOSFET 75 Amps, 30 Volts N−Channel TO−220 and D2PAK http://onsemi.com This 20 VGS gate drive vertical Power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. This power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The Drain−to−Source Diode has a fast response with soft recovery. V(BR)DSS RDS(on) TYP ID MAX 30 V 5.3 mW @ 10 V 75 A Features • • • • • • • Ultra−Low RDS(on), Single Base, Advanced Technology SPICE Parameters Available Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperatures High Avalanche Energy Capability ESD JEDAC Rated HBM Class 1, MM Class B, CDM Class 0 Pb−Free Packages are Available 4 4 2 1 3 1 2 D2PAK CASE 418AA STYLE 2 TO−220AB CASE 221A STYLE 5 3 Typical Applications • • • • Power Supplies Inductive Loads PWM Motor Controls Replaces MTP1306 and MTB1306 MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain 4 Drain N−Channel D 75N 03−06G AYWW 75N 03−06G AYWW 1 Gate G 3 Source 1 Gate 2 Drain 3 Source 2 Drain S N75N03−06 A Y WW G = Device Code = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2005 August, 2005 − Rev. 6 1 Publication Order Number: NTP75N03−06/D NTP75N03−06, NTB75N03−06 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage Rating VDSS 30 Vdc Drain−to−Gate Voltage (RGS = 10 MW) VDGB 30 Vdc Gate−to−Source Voltage − Continuous VGS ±20 Vdc Non−repetitive (tp ≤ 10 ms) VGS ±24 Vdc ID ID 75 59 225 Adc PD 125 1.0 2.5 W W/°C W TJ and Tstg −55 to 150 °C EAS 1500 mJ RqJC RqJA RqJA 1.0 62.5 50 °C/W TL 260 °C Drain Current − Continuous @ TC = 25°C − Continuous @ TC = 100°C − Single Pulse (tp ≤ 10 ms) IDM Total Power Dissipation @ TC = 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 1) Operating and Storage Temperature Range Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 38 Vdc, VGS = 10 Vdc, L = 1 mH, IL(pk) = 55 A, VDS = 40 Vdc) Thermal Resistance − Junction−to−Case − Junction−to−Ambient − Junction−to−Ambient (Note 1) Maximum Lead Temperature for Soldering Purposes, 1/8 in from case for 10 seconds Apk Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. When surface mounted to an FR4 board using the minimum recommended pad size. ORDERING INFORMATION Package Shipping † TO−220 50 Units / Rail TO−220 (Pb−Free) 50 Units / Rail D2PAK 50 Units / Rail NTB75N03−06G D2PAK (Pb−Free) 50 Units / Rail NTB75N03−06T4 D2PAK 800 Units / Tape & Reel NTB75N03−06T4G D2PAK 800 Units / Tape & Reel Device NTP75N03−06 NTP75N03−06G NTB75N03−06 (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 NTP75N03−06, NTB75N03−06 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 30 − −57 − − Vdc mV°C − − − − 1.0 10 − − ±100 nAdc 1.0 − 1.6 −6 2.0 − Vdc mV°C − 5.3 6.5 − − 0.53 0.35 0.68 0.50 gFS − 58 − Mhos Ciss − 4398 5635 pF Coss − 1160 1894 Crss − 317 430 td(on) − 16 30 tr − 130 200 td(off) − 65 110 tf − 105 175 QT − 57 75 Q1 − 11 15 Q2 − 34 50 VSD − − 1.19 1.09 1.25 − Vdc trr − 37 − ns ta − 20 − tb − 17 − QRR − 0.023 − OFF CHARACTERISTICS Drain −Source Breakdown Voltage (Note 2) (VGS = 0 Vdc, ID = 250 mAdc) Temperature Coefficient (Negative) V(BR)DSS Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 150°C) IDSS Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) IGSS mAdc ON CHARACTERISTICS (Note 2) Gate Threshold Voltage (Note 2) (VDS = VGS, ID = 250 mAdc) Threshold Temperature Coefficient (Negative) VGS(th) Static Drain−to−Source On−Resistance (Note 2) (VGS = 10 Vdc, ID = 37.5 Adc) RDS(on) Static Drain−to−Source On Resistance (Note 2) (VGS = 10 Vdc, ID = 75 Adc) (VGS = 10 Vdc, ID = 37.5 Adc, TJ = 125°C) VDS(on) Forward Transconductance (Notes 2 & 4) (VDS = 3 Vdc, ID = 20 Adc) mW Vdc DYNAMIC CHARACTERISTICS (Note 4) Input Capacitance Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Transfer Capacitance SWITCHING CHARACTERISTICS (Notes 3 and 4) Turn−On Delay Time Rise Time Turn−Off Delay Time (VGS = 5.0 Vdc, VDD = 20 Vdc, ID = 75 Adc, RG = 4.7 W) (Note 2) Fall Time Gate Charge (VGS = 5.0 Vdc, ID = 75 Adc, VDS = 24 Vdc) (Note 2) ns nC SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (IS = 75 Adc, VGS = 0 Vdc) (IS = 75 Adc, VGS = 0 Vdc, TJ = 125°C) (Note 2) Reverse Recovery Time (Note 4) Reverse Recovery Stored Charge (Note 4) (IS = 75 Adc, VGS = 0 Vdc dlS/dt = 100 A/ms) (Note 2) 2. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures. 4. From characterization test data. http://onsemi.com 3 mC NTP75N03−06, NTB75N03−06 150 VGS = 4 V VGS = 3.5 V VGS = 4.5 V 90 VGS = 5 V VGS = 6 V VGS = 8 V VGS = 10 V 60 VGS = 3 V 30 TJ = 25°C VGS = 2.5 V 0 105 90 75 60 TJ = 25°C 45 30 TJ = 100°C 15 1 1.5 2.5 3 3.5 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics VGS = 10 V TJ = 100°C 0.0065 0.0060 TJ = 25°C 0.0055 0.0050 0.0045 TJ = −55°C 0.0040 0.0035 0.0030 10 20 30 40 50 60 70 80 90 100 120 4 0.009 TJ = 25°C 0.008 0.007 VGS = 5 V 0.006 VGS = 10 V 0.005 0.004 0 20 ID, DRAIN CURRENT (AMPS) 40 60 80 100 120 ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance vs. Drain Current and Temperature Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1000 1.6 VGS = 0 V VGS = 10 V ID = 37.5 A 1.4 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO SOURCE RESISTANCE (NORMALIZED) 2 TJ = −55°C VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 0.0075 0.0070 120 0 0.5 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 RDS(on), DRAIN−TO SOURCE RESISTANCE (W) RDS(on), DRAIN−TO SOURCE RESISTANCE (W) 0 0.2 0.4 0.6 0.8 1 VDS ≥ 10 V 135 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 120 1.2 1 0.8 0.6 −50 TJ = 125°C 100 TJ = 100°C 10 1 −25 0 25 50 75 100 125 150 5 10 15 20 25 30 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 4 NTP75N03−06, NTB75N03−06 VDS = 0 V VGS = 0 V TJ = 25°C 10000 8000 6000 Ciss 4000 Coss 2000 Crss 0 10 8 6 4 2 0 2 4 6 8 10 12 14 16 18 20 22 25 VGS, GATE−TO−SOURCE VOLTAGE (V) VGS VDS C, CAPACITANCE (pF) 30 10 12000 8 VGS QT Q2 Q1 4 10 2 ID = 75 A TJ = 25°C Q3 0 0 10 20 30 40 50 Qg, TOTAL GATE CHARGE (nC) GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) IS, SOURCE CURRENT (AMPS) 1000 tf 100 td(off) td(on) 1 2.2 4.7 6.2 VDD = 15 V VGS = 5 V 9.1 10 20 75 70 65 60 55 50 45 40 35 30 25 20 15 10 5 0 0.0 VGS = 0 V TJ = 25°C 0.2 0.4 0.6 0.8 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current EAS, SINGLE PULSE DRAIN−TO−SOURCE AVALANCHE ENERGY (mJ) t, TIME (ns) tr 10 0 60 Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge Figure 7. Capacitance Variation TJ = 25°C ID = 75 A 20 VDS 6 1600 ID = 75 A 1400 1200 1000 800 600 400 200 0 25 50 75 100 125 TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 5 150 1.0 NTP75N03−06, NTB75N03−06 PACKAGE DIMENSIONS D2PAK CASE 418AA−01 ISSUE O C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E V W −B− 4 DIM A B C D E F G J K M S V A 1 2 S 3 −T− SEATING PLANE K W J G D 3 PL 0.13 (0.005) T B M STYLE 2: PIN 1. 2. 3. 4. M VARIABLE CONFIGURATION ZONE U M INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.036 0.045 0.055 0.310 −−− 0.100 BSC 0.018 0.025 0.090 0.110 0.280 −−− 0.575 0.625 0.045 0.055 M M F F F VIEW W−W 1 VIEW W−W 2 VIEW W−W 3 SOLDERING FOOTPRINT* 8.38 0.33 1.016 0.04 10.66 0.42 5.08 0.20 3.05 0.12 17.02 0.67 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.92 1.14 1.40 7.87 −−− 2.54 BSC 0.46 0.64 2.29 2.79 7.11 −−− 14.60 15.88 1.14 1.40 NTP75N03−06, NTB75N03−06 PACKAGE DIMENSIONS TO−220 THREE−LEAD TO−220AB CASE 221A−09 ISSUE AA −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 −−− −−− 0.080 STYLE 5: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 −−− −−− 2.04 GATE DRAIN SOURCE DRAIN ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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