NTP75N06L

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. NTP75N06L, NTB75N06L Power MOSFET 75 Amps, 60 Volts, Logic Level N−Channel TO−220 and D2PAK http://onsemi.com Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. 75 AMPERES, 60 VOLTS RDS(on) = 11 mW Features N−Channel • Pb−Free Packages are Available D Typical Applications • • • • Power Supplies Converters Power Motor Controls Bridge Circuits G S 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS 60 Vdc Drain−to−Gate Voltage (RGS = 10 MW) VDGR 60 Vdc Gate−to−Source Voltage − Continuous − Non−Repetitive (tpv10 ms) 4 1 3 Vdc VGS VGS "20 "15 ID ID 75 50 225 Adc PD 214 1.4 2.4 W W/°C W TJ, Tstg −55 to +175 °C 844 mJ 1 2 3 Drain Current − Continuous @ TA = 25°C − Continuous @ TA = 100°C − Single Pulse (tpv10 ms) Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 1) Operating and Storage Temperature Range Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 50 Vdc, VGS = 5.0 Vdc, L = 0.3 mH IL(pk) = 75 A, VDS = 60 Vdc) Thermal Resistance − Junction−to−Case − Junction−to−Ambient (Note 1) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds IDM EAS RqJC RqJA 0.7 62.5 TL 260 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. When surface mounted to an FR4 board using minimum recommended pad size, (Cu Area 0.412 in2). © Semiconductor Components Industries, LLC, 2005 August, 2005 − Rev. 1 1 D2PAK CASE 418B STYLE 2 TO−220AB CASE 221A STYLE 5 MARKING DIAGRAMS & PIN ASSIGNMENTS Apk °C/W 2 4 Drain 4 Drain 75N06LG AYWW NTP75N06L AYWW 1 Gate 3 Source 1 Gate 2 Drain 3 Source 2 Drain A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Publication Order Number: NTP75N06L/D NTP75N06L, NTB75N06L ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max Unit 60 − 72 74 − − − − − − 10 100 − − ±100 1.0 − 1.58 6.0 2.0 − − 9.0 11 − − 0.75 0.61 0.99 − gFS − 55 − mhos Ciss − 3122 4370 pF Coss − 1029 1440 Crss − 276 390 td(on) − 22 32 OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 2) (VGS = 0 Vdc, ID = 250 mAdc) Temperature Coefficient (Positive) V(BR)DSS Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C) IDSS Gate−Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc) IGSS Vdc mV/°C mAdc nAdc ON CHARACTERISTICS (Note 2) Gate Threshold Voltage (Note 2) (VDS = VGS, ID = 250 mAdc) Threshold Temperature Coefficient (Negative) VGS(th) Static Drain−to−Source On−Resistance (Note 2) (VGS = 5.0 Vdc, ID = 37.5 Adc) RDS(on) Static Drain−to−Source On−Voltage (Note 2) (VGS = 5.0 Vdc, ID = 75 Adc) (VGS = 5.0 Vdc, ID = 37.5 Adc, TJ = 150°C) VDS(on) Forward Transconductance (Note 2) (VDS = 15 Vdc, ID = 37.5 Adc) Vdc mV/°C mW Vdc DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Transfer Capacitance SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time (VDD = 30 Vdc, ID = 75 Adc, VGS = 5.0 Vdc, RG = 9.1 W) (Note 2) Fall Time Gate Charge (VDS = 48 Vdc, ID = 75 Adc, VGS = 5.0 Vdc) (Note 2) ns tr − 265 370 td(off) − 113 160 tf − 170 240 QT − 66 92 Q1 − 9.0 − Q2 − 47 − VSD − − 1.0 0.9 1.15 − Vdc trr − 70 − ns ta − 43 − tb − 27 − QRR − 0.16 − nC SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (IS = 75 Adc, VGS = 0 Vdc) (Note 2) (IS = 75 Adc, VGS = 0 Vdc, TJ = 150°C) Reverse Recovery Time (IS = 75 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) (Note 2) Reverse Recovery Stored Charge 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 mC NTP75N06L, NTB75N06L 160 VGS = 4.5 V VGS = 10 V 140 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 160 VGS = 5 V 120 VGS = 6 V VGS = 4 V 100 80 VGS = 7 V 60 VGS = 8 V VGS = 3.5 V 40 VGS = 3 V 20 2 4 3 80 60 40 TJ = 25°C 20 TJ = 100°C TJ = −55°C 2.2 1.8 2.6 3 3.4 3.8 4.2 4.6 Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics VGS = 5 V 0.016 TJ = 100°C 0.012 TJ = 25°C 0.008 TJ = −55°C 0.004 0 20 40 60 80 100 120 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) VGS, GATE−TO−SOURCE VOLTAGE (V) 0.02 5 0.02 VGS = 10 V 0.016 TJ = 100°C 0.012 TJ = 25°C 0.008 TJ = −55°C 0.004 0 20 40 60 80 100 120 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 2 1.8 100 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 100000 ID = 37.5 A VGS = 5 V VGS = 0 V TJ = 150°C 10000 1.6 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1 120 0 1.4 0 0 VDS w 10 V 140 1.4 1.2 1 TJ = 125°C 1000 TJ = 100°C 100 0.8 0.6 −50 10 −25 0 25 50 75 100 125 150 175 0 10 20 30 40 50 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 60 VGS, GATE−TO−SOURCE VOLTAGE (V) NTP75N06L, NTB75N06L 12000 VDS = 0 V VGS = 0 V TJ = 25°C C, CAPACITANCE (pF) 10000 Ciss 8000 Crss 6000 Ciss 4000 Coss 2000 Crss 0 10 5 VGS 0 VDS 5 15 20 10 25 GATE−TO−SOURCE OR DRAIN−TO−SOURCE (V) 6 QT 5 Q2 4 3 2 1 0 ID = 75 A TJ = 25°C 0 10 80 IS, SOURCE CURRENT (AMPS) t, TIME (ns) tr tf 100 td(off) td(on) 1 10 40 50 70 60 VGS = 0 V TJ = 25°C 70 60 50 40 30 20 10 0 0.6 100 0.64 0.68 0.72 0.76 0.8 0.84 0.86 0.92 0.96 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variations vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 VGS = 15 V SINGLE PULSE TC = 25°C 10 ms 100 100 ms 1 ms 10 ms 10 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 0.1 EAS, SINGLE PULSE DRAIN−TO−SOURCE AVALANCHE ENERGY (mJ) RG, GATE RESISTANCE (W) 1000 ID, DRAIN CURRENT (AMPS) 30 Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge VDS = 30 V ID = 75 A VGS = 5 V 10 20 Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation 1000 VGS Q1 1 dc 10 100 ID = 75 A 800 600 400 200 0 25 50 75 100 125 150 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 4 175 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) NTP75N06L, NTB75N06L 1.0 D = 0.5 0.2 0.1 0.1 P(pk) 0.05 0.02 t1 0.01 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.00001 0.0001 0.001 0.01 t, TIME (ms) 0.1 RqJC(t) = r(t) RqJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) RqJC(t) 1.0 10 Figure 13. Thermal Response ORDERING INFORMATION Package Shipping † NTP75N06L TO−220AB 50 Units / Rail NTB75N06L D2PAK 50 Units / Rail NTB75N06LG D2PAK 50 Units / Rail Device (Pb−Free) D2PAK 800 Units / Tape & Reel D2PAK (Pb−Free) 800 Units / Tape & Reel NTB75N06LT4 NTB75N06LT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 NTP75N06L, NTB75N06L PACKAGE DIMENSIONS D2PAK CASE 418B−04 ISSUE J C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. E V W −B− 4 DIM A B C D E F G H J K L M N P R S V A 1 2 S 3 −T− SEATING PLANE K W J G D 3 PL 0.13 (0.005) VARIABLE CONFIGURATION ZONE H M T B M N R M STYLE 2: PIN 1. 2. 3. 4. P U L L M L M F F F VIEW W−W 1 VIEW W−W 2 VIEW W−W 3 SOLDERING FOOTPRINT* 8.38 0.33 1.016 0.04 10.66 0.42 5.08 0.20 3.05 0.12 17.02 0.67 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 NTP75N06L, NTB75N06L PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AA −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 −−− −−− 0.080 STYLE 5: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 −−− −−− 2.04 GATE DRAIN SOURCE DRAIN ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: orderlit@onsemi.com http://onsemi.com 7 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NTP75N06L/D