NTSV30100CTG

NTSV30100CT Very Low Forward Voltage Trench-based Schottky Rectifier Exceptionally Low VF = 0.471 V at IF = 5 A http://onsemi.com PIN CONNECTIONS Features • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability Low Power Loss and Lower Operating Temperature Higher Efficiency for Achieving Regulatory Compliance Low Thermal Resistance High Surge Capability This Device is Pb−Free, Halogen Free/BFR Free and is RoHS Compliant 1 2, 4 3 4 Typical Applications • Switching Power Supplies including Notebook/Netbook Adapters, • • • • 1 ATX and Flat Panel Display High Frequency and DC−DC Converters Freewheeling and OR−ing Diodes Reverse Battery Protection Instrumentation 2 3 TO−220 CASE 221A STYLE 6 MARKING DIAGRAM Mechanical Characteristics • Case: Epoxy, Molded • Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable AY WW TSV30100Cx AKA • Lead Temperature for Soldering Purposes: 260°C Maximum for 10 sec A Y WW AKA x G H = Assembly Location = Year = Work Week = Polarity Designator = G or H = Pb−Free Package = Halide−Free Package ORDERING INFORMATION © Semiconductor Components Industries, LLC, 2014 September, 2014 − Rev. 1 1 Device Package NTSV30100CTG TO−220 (Pb−Free) Shipping 50 Units / Rail Publication Order Number: NTSV30100CT/D NTSV30100CT MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 100 V Average Rectified Forward Current (Rated VR, TC = 115°C) Per Device Per Diode IF(AV) Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 110°C) Per Device Per Diode IFRM Non-repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM A 30 15 A 60 30 A 100 Operating Junction Temperature TJ −40 to +150 °C Storage Temperature Tstg −40 to +150 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Rating Symbol Value RqJC RqJA 2.0 70 Unit °C/W Maximum Thermal Resistance Junction−to−Case Junction−to−Ambient ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted) Rating Symbol Maximum Instantaneous Forward Voltage (Note 1) (IF = 5 A, TJ = 25°C) (IF = 7.5 A, TJ = 25°C) (IF = 15 A, TJ = 25°C) Typ Max 0.509 0.575 0.751 − − 1.05 0.471 0.539 0.662 − − 0.82 vF (IF = 5 A, TJ = 125°C) (IF = 7.5 A, TJ = 125°C) (IF = 15 A, TJ = 125°C) Maximum Instantaneous Reverse Current (Note 1) (VR = 70 V, TJ = 25°C) (VR = 70 V, TJ = 125°C) V IR mA mA 11.2 7.9 (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 125°C) Unit 63 19.1 500 35 mA mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0% http://onsemi.com 2 NTSV30100CT TYPICAL CHARACTERISTICS 100 TA = 150°C IR, INSTANTANEOUS REVERSE CURRENT (mA) iF, INSTANTANEOUS FORWARD CURRENT (A) 100 TA = 25°C 10 TA = 125°C 1 TA = 125°C 1 0.1 TA = 25°C 0.001 0 0.2 0.4 0.8 0.6 1.0 1.2 1.4 1.6 20 1.8 30 40 50 60 70 80 90 100 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 1. Typical Instantaneous Forward Characteristics Figure 2. Typical Reverse Characteristics 10,000 30 RqJC = 1.3°C/W TJ = 25°C IF(AV), AVERAGE FORWARD CURRENT (A) C, JUNCTION CAPACITANCE (pF) 10 0.01 0.1 1000 100 25 dc 20 Square Wave 15 10 5 0 10 0.1 1 10 0 100 20 40 60 80 100 120 VR, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE (°C) Figure 3. Typical Junction Capacitance Figure 4. Current Derating per Leg 60 55 50 30 RqJC = 1.3°C/W dc 45 40 Square Wave 35 30 25 20 15 10 5 0 PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) IF(AV), AVERAGE FORWARD CURRENT (A) TA = 150°C IPK/IAV = IPK/IAV = 10 20 25 140 IPK/IAV = 5 Square Wave 20 15 dc 10 5 TJ = 150°C 0 0 20 40 60 80 100 120 0 140 2 4 6 8 10 12 14 16 18 TC, CASE TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (A) Figure 5. Current Derating Figure 6. Forward Power Dissipation http://onsemi.com 3 20 NTSV30100CT TYPICAL CHARACTERISTICS R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W) 10 1 50% 20% 10% P(pk) 0.1 5% t1 2% 1% t2 DUTY CYCLE, D = t1/t2 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 t, PULSE TIME (sec) Figure 7. Typical Transient Thermal Response http://onsemi.com 4 10 100 1000 onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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