NTB5860NL, NTP5860NL,
NVB5860NL
N-Channel Power MOSFET
60 V, 220 A, 3.0 mW
Features
•
•
•
•
•
http://onsemi.com
Low RDS(on)
High Current Capability
100% Avalanche Tested
These Devices are Pb−Free, Halogen Free and are RoHS Compliant
NVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
RDS(on) MAX
V(BR)DSS
ID MAX
3.0 mW @ 10 V
60 V
220 A
3.6 mW @ 4.5 V
D
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
60
V
Gate−to−Source Voltage − Continuous
VGS
$20
V
ID
220
A
Continuous Drain
Current, RqJC
Steady
State
Power Dissipation,
RqJC
Steady
State
TA = 25°C
TA = 100°C
4
283
W
IDM
660
A
Current Limited by Package
IDMmax
130
A
Operating and Storage Temperature Range
TJ, Tstg
−55 to
+175
°C
IS
130
A
Single Pulse Drain−to−Source Avalanche
Energy (L = 0.3 mH)
EAS
735
mJ
Lead Temperature for Soldering
Purposes (1/8″ from Case for 10 Seconds)
TL
260
°C
Symbol
Max
Unit
Junction−to−Case (Drain) Steady State
RqJC
0.53
°C/W
Junction−to−Ambient − Steady State (Note 1)
RqJA
28
tp = 10 ms
Source Current (Body Diode)
S
N−CHANNEL MOSFET
156
PD
Pulsed Drain Current
TA = 25°C
G
4
1
3
1
2
D2PAK
CASE 418B
STYLE 2
TO−220AB
CASE 221A
STYLE 5
3
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
THERMAL RESISTANCE RATINGS
Parameter
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
2
NTB
5860NLG
AYWW
NTP
5860NLG
AYWW
1
Gate
3
Source
1
Gate
2
Drain
3
Source
2
Drain
G
A
Y
WW
= Pb−Free Device
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
Augsut, 2012 − Rev. 1
1
Publication Order Number:
NTB5860NL/D
NTB5860NL, NTP5860NL, NVB5860NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C Unless otherwise specified)
Characteristics
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VDS = 0 V, ID = 250 mA
60
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−Source Leakage Current
IDSS
V
6.1
ID = 250 mA
mV/°C
VGS = 0 V
VDS = 60 V
TJ = 25°C
1.0
VGS = 0 V
VDS = 60 V
TJ = 125°C
100
IGSS
VDS = 0 V, VGS = $20 V
VGS(th)
VGS = VDS, ID = 250 mA
mA
$100
nA
3.0
V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Threshold Temperature Coefficient
Drain−to−Source On−Resistance
VGS(th)/TJ
−7.7
RDS(on)
Forward Transconductance
1.0
gFS
mV/°C
VGS = 10 V, ID = 20 A
2.4
3.0
mW
VGS = 4.5 V, ID = 20 A
2.8
3.6
VDS = 15 V, ID = 30 A
47
S
13216
pF
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Ciss
VDS = 25 V, VGS = 0 V,
f = 1 MHz
Output Capacitance
Coss
Transfer Capacitance
Crss
752
Total Gate Charge
QG(TOT)
220
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
VGS = 10 V, VDS = 48 V,
ID = 40 A
1127
nC
13
37
54
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(on)
tr
td(off)
ns
25
VGS = 10 V, VDD = 48 V,
ID = 100 A, RG = 2.5 W
tf
58
98
144
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
trr
Charge Time
ta
Discharge Time
tb
Reverse Recovery Stored Charge
VGS = 0 V
IS = 40 A
TJ = 25°C
0.76
TJ = 125°C
0.60
50
VGS = 0 V, IS = 100 A,
dIS/dt = 20 A/ms
QRR
http://onsemi.com
2
Vdc
ns
25
25
71
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
1.1
nC
NTB5860NL, NTP5860NL, NVB5860NL
TYPICAL CHARACTERISTICS
VGS =
10 V
240
VGS = 4 V
4.4 V
280
TJ = 25°C
ID, DRAIN CURRENT (A)
3.8 V
200
3.6 V
160
120
3.4 V
80
3.2 V
200
160
120
40
0
0
1
2
3
4
5
TJ = 25°C
80
40
0
VDS ≥ 10 V
240
TJ = 125°C
2
3
5
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.0035
ID = 20 A
TJ = 25°C
0.006
TJ = 25°C
VGS = 4.5 V
0.0030
0.004
VGS = 10 V
0.0025
0.002
0.000
4
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.008
2
4
6
8
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.0020
10
30
50
90
70
110
130
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate Voltage
Figure 4. On−Resistance vs. Drain Current
100000
2.0
VGS = 0 V
ID = 20 A
1.8 V = 10 V
GS
1.6
TJ = 150°C
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
TJ = −55°C
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
280
1.4
10000
1.2
1.0
TJ = 125°C
0.8
0.6
−50
−25
0
25
50
75
100
125
150
175
1000
10
20
30
40
50
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
http://onsemi.com
3
60
NTB5860NL, NTP5860NL, NVB5860NL
16000
C, CAPACITANCE (pF)
VGS = 0 V
TJ = 25°C
Ciss
14000
VGS, GATE−TO−SOURCE VOLTAGE (V)
TYPICAL CHARACTERISTICS
12000
10000
8000
6000
4000
Coss
2000
0
0
Crss
10
20
30
40
QT
8
6
Qgs
4
Qgd
2
0
VDS = 48 V
ID = 40 A
TJ = 25°C
0
50
100
150
200
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
1000
250
180
VDD = 48 V
ID = 40 A
VGS = 10 V
IS, SOURCE CURRENT (A)
tf
td(off)
100
VGS = 0 V
TJ = 25°C
160
tr
td(on)
140
120
100
80
60
40
20
10
1
10
100
0
0.60
0.70
0.80
0.90
1.00
1.10
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
ID, DRAIN CURRENT (A)
t, TIME (ns)
10
1 ms
10 ms
dc
100 ms 10 ms
100
10
1
0.1
VGS = 10 V
SINGLE PULSE
TC = 25°C
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
1
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
http://onsemi.com
4
100
NTB5860NL, NTP5860NL, NVB5860NL
TYPICAL CHARACTERISTICS
RqJC(t) (°C/W) EFFECTIVE TRANSIENT
THERMAL RESISTANCE
1
Duty Cycle = 0.5
0.1
0.2
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
t, PULSE TIME (s)
Figure 12. Thermal Response
ORDERING INFORMATION
Package
Shipping†
NTP5860NLG
TO−220AB
(Pb−Free)
50 Units / Rail
NTB5860NLT4G
D2PAK
(Pb−Free)
800 / Tape & Reel
NVB5860NLT4G*
D2PAK
(Pb−Free)
800 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
http://onsemi.com
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AJ
DATE 05 NOV 2019
SCALE 1:1
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
STYLE 2:
PIN 1.
2.
3.
4.
BASE
EMITTER
COLLECTOR
EMITTER
STYLE 3:
PIN 1.
2.
3.
4.
CATHODE
ANODE
GATE
ANODE
STYLE 4:
PIN 1.
2.
3.
4.
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
MAIN TERMINAL 2
STYLE 5:
PIN 1.
2.
3.
4.
GATE
DRAIN
SOURCE
DRAIN
STYLE 6:
PIN 1.
2.
3.
4.
ANODE
CATHODE
ANODE
CATHODE
STYLE 7:
PIN 1.
2.
3.
4.
CATHODE
ANODE
CATHODE
ANODE
STYLE 8:
PIN 1.
2.
3.
4.
CATHODE
ANODE
EXTERNAL TRIP/DELAY
ANODE
STYLE 9:
PIN 1.
2.
3.
4.
GATE
COLLECTOR
EMITTER
COLLECTOR
STYLE 10:
PIN 1.
2.
3.
4.
GATE
SOURCE
DRAIN
SOURCE
STYLE 11:
PIN 1.
2.
3.
4.
DRAIN
SOURCE
GATE
SOURCE
STYLE 12:
PIN 1.
2.
3.
4.
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
NOT CONNECTED
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42148B
TO−220
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK 3
CASE 418B−04
ISSUE L
DATE 17 FEB 2015
SCALE 1:1
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
C
E
−B−
V
W
4
1
2
A
S
3
−T−
SEATING
PLANE
K
W
J
G
D
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
S
V
H
3 PL
0.13 (0.005)
M
T B
M
VARIABLE
CONFIGURATION
ZONE
N
R
P
L
M
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
L
M
F
F
F
VIEW W−W
1
VIEW W−W
2
VIEW W−W
3
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
MILLIMETERS
MIN
MAX
8.64
9.65
9.65 10.29
4.06
4.83
0.51
0.89
1.14
1.40
7.87
8.89
2.54 BSC
2.03
2.79
0.46
0.64
2.29
2.79
1.32
1.83
7.11
8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14
1.40
U
L
M
INCHES
MIN
MAX
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
0.080
0.110
0.018 0.025
0.090
0.110
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625
0.045 0.055
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
STYLE 4:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 5:
STYLE 6:
PIN 1. CATHODE
PIN 1. NO CONNECT
2. ANODE
2. CATHODE
3. CATHODE
3. ANODE
4. ANODE
4. CATHODE
MARKING INFORMATION AND FOOTPRINT ON PAGE 2
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42761B
D2PAK 3
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
D2PAK 3
CASE 418B−04
ISSUE L
DATE 17 FEB 2015
GENERIC
MARKING DIAGRAM*
xx
xxxxxxxxx
AWLYWWG
xxxxxxxxG
AYWW
AYWW
xxxxxxxxG
AKA
IC
Standard
Rectifier
xx
A
WL
Y
WW
G
AKA
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
= Polarity Indicator
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
SOLDERING FOOTPRINT*
10.49
8.38
16.155
2X
3.504
2X
1.016
5.080
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42761B
D2PAK 3
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
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vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
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