NVMFS5885NLWFT1G

NVMFS5885NL MOSFET – Power, Single N-Channel 60 V, 15 mW, 39 A Features • • • • • • http://onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVMFS5885NLWF − Wettable Flanks Product AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX 15 mW @ 10 V 60 V D (5,6) Symbol Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage VGS "20 V ID 39 A Continuous Drain Current RYJ−mb (Notes 1, 2, 3) Power Dissipation RYJ−mb (Notes 1, 2, 3) Continuous Drain Current RqJA (Notes 1 & 3) Power Dissipation RqJA (Notes 1 & 3) Pulsed Drain Current Tmb = 25°C Steady State Tmb = 100°C Tmb = 25°C Tmb = 100°C TA = 25°C Steady State ID TA = 25°C, tp = 10 ms Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V, IL(pk) = 18 A, L = 0.3 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) N−CHANNEL MOSFET A 10.2 MARKING DIAGRAM 7.2 PD TA = 100°C Operating Junction and Storage Temperature S (1,2,3) W 54 27 TA = 100°C TA = 25°C G (4) 28 PD 39 A 21 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter ID MAX W 3.7 1.8 IDM 179 A TJ, Tstg −55 to 175 °C IS 46 A EAS 49 mJ TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. D 1 DFN5 (SO−8FL) CASE 488AA STYLE 1 A Y W ZZ S S S G D XXXXXX AYWZZ D D = Assembly Location = Year = Work Week = Lot Traceability ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction−to−Mounting Board (top) − Steady State (Notes 2, 3) Junction−to−Ambient − Steady State (Note 3) Symbol Value Unit RYJ−mb 2.8 °C/W RqJA 41 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Psi (Y) is used as required per JESD51−12 for packages in which substantially less than 100% of the heat flows to single case surface. 3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. © Semiconductor Components Industries, LLC, 2013 July, 2019 − Rev. 3 1 Publication Order Number: NVMFS5885NL/D NVMFS5885NL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Min V(BR)DSS VGS = 0 V, ID = 250 mA 60 Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current VGS = 0 V, VDS = 60 V V TJ = 25°C 1.0 TJ = 125°C 10 mA IGSS VDS = 0 V, VGS = ± 20 V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA 2.5 V Drain−to−Source On Resistance RDS(on) VGS = 10 V, ID = 15 A 11.6 15 mW VGS = 4.5 V, ID = 15 A 15.2 21 VGS = 0 V, f = 1 MHz, VDS = 25 V 1340 ±100 nA ON CHARACTERISTICS (Note 4) 1.5 CHARGES AND CAPACITANCES Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Total Gate Charge Crss 85 12 QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Total Gate Charge 125 QG(TOT) Threshold Gate Charge QG(TOT) VGS = 4.5 V, VDS = 48 V, ID = 15 A pF 1.1 nC 4.0 6.3 VGS = 10 V, VDS = 48 V, ID = 15 A 21 nC SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 10 VGS = 4.5 V, VDS = 48 V, ID = 15 A, RG = 2.5 W tf 64 ns 18 52 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.8 TJ = 125°C 0.7 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 15 A 1.2 V 20 VGS = 0 V, dIs/dt = 100 A/ms, IS = 15 A QRR 15 5.0 16 4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 5. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 ns nC NVMFS5885NL TYPICAL CHARACTERISTICS 80 80 TJ = 25°C 4.0 V 50 40 3.6 V 30 20 VGS = 3.2 V 10 0 1 2 3 4 40 20 TJ = −55°C 2 3 4 5 Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 0.020 0.015 0.010 3 4 5 6 7 8 9 VGS, GATE−TO−SOURCE VOLTAGE (V) 0.020 TJ = 25°C 0.018 VGS = 4.5 V 0.016 0.014 VGS = 10 V 0.012 0.010 0.008 10 5 10 15 20 25 30 35 40 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 10000 2.6 VGS = 0 V VGS = 15 V ID = 4.5 A 1.8 1.4 1.0 0.6 TJ = 125°C VGS, GATE−TO−SOURCE VOLTAGE (V) 0.025 2.2 TJ = 25°C 30 0 5 ID = 15 A TJ = 25°C 2 50 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.030 0.005 60 10 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) ID, DRAIN CURRENT (A) 10 V 60 VDS ≥ 10 V 70 4.5 V RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 70 6.5 V 50 25 0 25 50 75 100 125 150 175 TJ = 150°C 1000 100 TJ = 125°C 10 20 30 40 50 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 60 NVMFS5885NL 1600 C, CAPACITANCE (pF) 1400 VGS = 0 V TJ = 25°C Ciss 1200 1000 800 600 400 Coss 200 0 Crss 0 10 20 30 40 50 60 VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS 10 QT 8 6 Qgs 4 VDS = 48 A ID = 15 A TJ = 25°C 2 0 0 4 6 8 10 12 14 16 18 20 Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Total Charge 22 40 VGS = 0 V TJ = 25°C 100 IS, SOURCE CURRENT (A) 35 tr tf td(off) td(on) 10 VDD = 48 V VGS = 4.5 V ID = 15 A 1 10 100 30 25 20 15 10 5 0 0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 VGS = 10 V 100 ms Single Pulse 1 ms TC = 25°C 10 ms 100 ID, DRAIN CURRENT (A) t, TIME (ns) 2 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 1 Qgd 10 ms 10 1 0.1 0.01 dc RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 4 100 NVMFS5885NL TYPICAL CHARACTERISTICS RqJA(t) (°C/W) EFFECTIVE TRANSIENT THERMAL RESISTANCE 100 Duty Cycle = 0.5 10 0.2 0.1 0.05 1 0.02 0.01 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 12. Thermal Response DEVICE ORDERING INFORMATION Marking Package Shipping† NVMFS5885NLT1G V5885L DFN5 (Pb−Free) 1500 / Tape & Reel NVMFS5885NLWFT1G 5885LW DFN5 (Pb−Free) 1500 / Tape & Reel NVMFS5885NLT3G V5885L DFN5 (Pb−Free) 5000 / Tape & Reel NVMFS5885NLWFT3G 5885LW DFN5 (Pb−Free) 5000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N 1 DATE 25 JUN 2018 SCALE 2:1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 2 q E c 1 2 3 A1 4 TOP VIEW C DETAIL A 0.10 C SEATING PLANE A 0.10 C SIDE VIEW MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q GENERIC MARKING DIAGRAM* DETAIL A 1 0.10 b C A B 0.05 c 8X XXXXXX AYWZZ e/2 e L 1 4 K RECOMMENDED SOLDERING FOOTPRINT* E2 PIN 5 (EXPOSED PAD) L1 M 2X 0.495 4.560 2X 1.530 G D2 2X BOTTOM VIEW XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 0.475 3.200 4.530 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 1.330 STYLE 2: 2X PIN 1. ANODE 0.905 2. ANODE 3. ANODE 4. NO CONNECT 0.965 5. CATHODE 1 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON14036D DFN5 5x6, 1.27P (SO−8FL) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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