NVMFS5C404NWFET1G

DATA SHEET www.onsemi.com MOSFET - Power, Single N-Channel V(BR)DSS RDS(ON) MAX ID MAX 40 V 0.7 mW @ 10 V 378 A 40 V, 0.7 mW, 378 A NVMFS5C404N D (5,6) Features       Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS5C404NWF − Wettable Flank Option for Enhanced Optical Inspection AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant G (4) S (1,2,3) N−CHANNEL MOSFET MARKING DIAGRAMS DFN5 CASE 506EZ MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS 20 V ID 378 A Parameter Continuous Drain Current RqJC (Notes 1, 3) TC = 25C Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 1, 2, 3) Steady State TC = 100C TC = 25C PD TC = 100C TA = 25C Power Dissipation RqJA (Notes 1, 2) 267 Steady State Pulsed Drain Current 100 ID TA = 100C TA = 25C W 200 PD W 3.9 1.9 900 A TJ, Tstg −55 to +175 C IS 191 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 38 A) EAS 907 mJ Lead Temperature for Soldering Purposes (1/8 from case for 10 s) TL 260 C Source Current (Body Diode) D D XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability A 53 IDM Operating Junction and Storage Temperature Range DFNW5 CASE 507BA D XXXXXX AYWZZ 37 TA = 100C TA = 25C, tp = 10 ms 1 D S S S G ORDERING INFORMATION See detailed ordering, marking and shipping information on page 5 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case − Steady State RqJC 0.75 C/W Junction−to−Ambient − Steady State (Note 2) RqJA 39 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle.  Semiconductor Components Industries, LLC, 2015 December, 2022 − Rev. 8 1 Publication Order Number: NVMFS5C404N/D NVMFS5C404N ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 40 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 19.7 VGS = 0 V, VDS = 40 V mV/C TJ = 25 C 10 TJ = 125C 250 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 250 mA 100 mA nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance Forward Transconductance RDS(on) 2.0 4.0 −6.2 VGS = 10 V gFS ID = 50 A VDS =15 V, ID = 50 A 0.57 V mV/C 0.7 210 mW S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 8400 VGS = 0 V, f = 1 MHz, VDS = 25 V 4600 pF 120 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 20 V; ID = 50 A Threshold Gate Charge QG(TH) 22 Gate−to−Source Charge QGS 35 Gate−to−Drain Charge QGD Plateau Voltage VGP 4.3 td(ON) 16 VGS = 10 V, VDS = 20 V; ID = 50 A 128 nC 26 V SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = 10 V, VDS = 20 V, ID = 50 A, RG = 2.5 W tf 113 ns 77 109 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25C 0.76 TJ = 125C 0.63 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 50 A 1.2 V 96 VGS = 0 V, dIS/dt = 100 A/ms, IS = 50 A QRR 49 ns 47 189 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NVMFS5C404N TYPICAL CHARACTERISTICS 600 10 V 700 8 V 7V 600 VDS = 10 V 6.5 V 5.8 V 500 5.6 V 400 5.4 V 300 5.2 V 5.0 V 200 4.8 V 4.6 V 4.4 V 100 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 0 ID, DRAIN CURRENT (A) 6V 0 0.5 1.0 1.5 2.0 300 TJ = 25C 200 TJ = 125C 100 Figure 2. Transfer Characteristics 3.5 3.0 2.5 2.0 1.5 1.0 0.5 4 5 6 7 8 9 10 VGS, GATE VOLTAGE (V) 0.64 0.62 0.60 0.58 0.56 0.54 0.52 0.50 0 100 200 300 400 500 600 700 800 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.E−03 2.1 VGS = 10 V ID = 50 A 1.7 IDSS, LEAKAGE (A) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 6.0 5.0 Figure 1. On−Region Characteristics 4.0 1.9 TJ = −55C 4.0 VGS, GATE−TO−SOURCE VOLTAGE (V) TJ = 25C IDS = 25 A 3 400 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 4.5 0.0 500 0 3.0 3.0 2.5 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 800 1.5 1.3 1.1 1.E−04 TJ = 150C 1.E−05 TJ = 125C 1.E−06 0.9 TJ = 85C 0.7 −50 −25 0 25 50 75 100 125 150 175 1.E−07 0 5 10 15 20 25 30 35 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 40 NVMFS5C404N TYPICAL CHARACTERISTICS CISS COSS 1E+3 1E+2 CRSS 1E+1 VGS = 0 V TJ = 25C f = 1 MHz 5 0 10 15 20 25 30 35 QGD 4 VDS = 20 V ID = 50 A TJ = 25C 2 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 tf tr td(on) 1 10 10 5 TJ = 150C 1 100 TJ = 125C 0.3 0.4 0.5 0.6 TJ = 25C 0.7 0.8 TJ = −55C 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 100 10 ms TC = 25C Single Pulse VGS  10 V RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 100 TJ(initial) = 25C IPEAK (A) IDS, DRAIN CURRENT (A) QGS 50 td(off) 1000 0.1 6 Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 10 1 8 Figure 7. Capacitance Variation 100 10 QT QG, TOTAL GATE CHARGE (nC) VGS = 10 V VDS = 20 V ID = 50 A 1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 t, TIME (ns) 40 IS, SOURCE CURRENT (A) C, CAPACITANCE (pF) 1E+4 1E+0 VGS, GATE−TO−SOURCE VOLTAGE (V) 1E+5 0.5 ms 1 ms 10 ms TJ(initial) = 100C 10 100 1000 1 1E−04 1E−03 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche www.onsemi.com 4 1E−02 NVMFS5C404N 100 RqJA(t) (C/W) 50% Duty Cycle 10 20% 10% 5% 1 2% 1% NVMFS5C404N 650 mm2, 2 oz., Cu Single Layer Pad 0.1 Single Pulse 0.01 1E−06 1E−05 1E−04 1E−03 1E−02 1E−01 1E+00 1E+01 1E+02 1E+03 PULSE TIME (sec) Figure 13. Thermal Characteristics DEVICE ORDERING INFORMATION Device Case Marking Package Shipping† NVMFS5C404NT1G 506EZ 5C404N DFN5 (Pb−Free) 1500 / Tape & Reel NVMFS5C404NWFT1G 507BA 404NWF DFNW5 (Pb−Free) 1500 / Tape & Reel NVMFS5C404NT3G 506EZ 5C404N DFN5 (Pb−Free) 5000 / Tape & Reel NVMFS5C404NWFT3G 507BA 404NWF DFNW5 (Pb−Free) 5000 / Tape & Reel NVMFS5C404NAFT1G 506EZ 5C404N DFN5 (Pb−Free) 1500 / Tape & Reel NVMFS5C404NWFAFT1G 507BA 404NWF DFNW5 (Pb−Free) 1500 / Tape & Reel NVMFS5C404NWFET1G 507BA 404NWF DFNW5 (Pb−Free) 1500 / Tape & Reel NVMFS5C404NWFET3G 507BA 404NWF DFNW5 (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 506EZ ISSUE A DATE 25 AUG 2021 1 SCALE 2:1 q q GENERIC MARKING DIAGRAM* 1 XXXXXX AYWZZ XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON24855H DFN5 5x6, 1.27P (SO−8FL) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFNW5 5x6 (FULL−CUT SO8FL WF) CASE 507BA ISSUE A DATE 03 FEB 2021 q q GENERIC MARKING DIAGRAM* 1 XXXXXX AYWZZ XXXXXX A Y W ZZ = Specific Device Code *This information is generic. Please refer to = Assembly Location device data sheet for actual part marking. = Year Pb−Free indicator, “G” or microdot “ G”, = Work Week may or may not be present. Some products = Lot Traceability may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON26450H Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. DFNW5 5x6 (FULL−CUT SO8FL WF) PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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