NVMFS5C466NWFT1G

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. NVMFS5C466N MOSFET – Power, Single N-Channel 40 V, 8.1 mW, 49 A Features • • • • • • Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS5C466NWF − Wettable Flank Option for Enhanced Optical Inspection AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) MAX ID MAX 40 V 8.1 mW @ 10 V 49 A D (5,6) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS ±20 V ID 49 A Parameter Continuous Drain Current RqJC (Notes 1, 3) TC = 25°C Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 1, 2, 3) Steady State TC = 100°C TC = 25°C Pulsed Drain Current PD TC = 100°C TA = 25°C Power Dissipation RqJA (Notes 1 & 2) 35 Steady State ID N−CHANNEL MOSFET W 37 PD 1 W 3.5 1.7 IDM 226 A TJ, Tstg −55 to + 175 °C IS 31 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 2.93 A) EAS 76 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Operating Junction and Storage Temperature Source Current (Body Diode) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. DFN5 (SO−8FL) CASE 488AA STYLE 1 D S S S G D XXXXXX AYWZZ D D XXXXXX = 5C466N XXXXXX = (NVMFS5C466N) or XXXXXX = 466NWF XXXXXX = (NVMFS5C466NWF) A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. THERMAL RESISTANCE MAXIMUM RATINGS Parameter MARKING DIAGRAM A 15 11 TA = 100°C TA = 25°C, tp = 10 ms S (1,2,3) 19 TA = 100°C TA = 25°C G (4) Symbol Value Unit Junction−to−Case − Steady State RqJC 4.0 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 43 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2017 July, 2019 − Rev. 0 1 Publication Order Number: NVMFS5C466N/D NVMFS5C466N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 40 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 23 VGS = 0 V, VDS = 40 V mV/°C TJ = 25 °C 10 TJ = 125°C 250 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 250 mA 100 mA nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance Forward Transconductance RDS(on) 2.5 3.5 −7 VGS = 10 V gFS ID = 15 A VDS =15 V, ID = 15 A 6.7 V mV/°C 8.1 29 mW S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS 625 Output Capacitance COSS Reverse Transfer Capacitance CRSS 15 Total Gate Charge QG(TOT) 10 Threshold Gate Charge QG(TH) 2.2 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 1.8 Plateau Voltage VGP 4.8 td(ON) 9.5 VGS = 0 V, f = 1 MHz, VDS = 25 V VGS = 10 V, VDS = 32 V; ID = 15 A 335 pF nC 3.5 nC V SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = 10 V, VDS = 32 V, ID = 15 A, RG = 1 W tf 24 ns 19 6 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.84 TJ = 125°C 0.71 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 15 A 1.2 V 24 VGS = 0 V, dIS/dt = 100 A/ms, IS = 15 A QRR 11 ns 12 11 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NVMFS5C466N TYPICAL CHARACTERISTICS 50 6V 35 30 25 20 5V 15 10 5 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 40 45 0 1 2 VDS = 3 V 40 35 30 25 20 15 TJ = 25°C 10 5 4V 0 3 TJ = 125°C 3.0 5.0 4.5 5.5 Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics TJ = 25°C ID = 15 A 35 30 25 20 15 10 5 0 4 5 6 7 9 8 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 6.0 10 VGS = 10 V 9 8 7 6 5 4 3 0 10 20 30 40 50 60 70 90 100 80 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 10K 1.9 VGS = 10 V ID = 15 A TJ = 150°C IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE TJ = −55°C 4.0 VGS, GATE−TO−SOURCE VOLTAGE (V) 40 1.7 3.5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 50 10 V to 7 V 45 1.5 1.3 1.1 TJ = 125°C 1K TJ = 85°C 100 0.9 0.7 −50 −25 0 25 50 75 100 125 150 175 10 5 10 15 20 25 30 35 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 40 NVMFS5C466N TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) 1000 C, CAPACITANCE (pF) CISS COSS 100 CRSS 10 1 VGS = 0 V TJ = 25°C f = 1 MHz 0 5 10 15 20 25 30 40 35 10 9 8 7 6 QGD QGS 5 4 3 VDS = 32 V ID = 15 A TJ = 25°C 2 1 0 0 2 1 3 4 5 6 7 8 9 VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Total Charge 10 100 IS, SOURCE CURRENT (A) VGS = 0 V t, TIME (ns) tr td(off) 10 td(on) tf 1 VGS = 10 V VDS = 32 V 1 5.5 0.5 10 TJ = 125°C 0.3 0.4 0.5 0.7 0.8 0.9 1.0 Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 IPEAK, (A) 10 TC = 25°C VGS ≤ 10 V Single Pulse 1 RDS(on) Limit Thermal Limit Package Limit 0.1 TJ (initial) = 25°C 10 10 ms 0.1 0.6 VSD, SOURCE−TO−DRAIN VOLTAGE (V) 100 1 TJ = −55°C TJ = 25°C RG, GATE RESISTANCE (W) 1000 ID, DRAIN CURRENT (A) 10.5 1 10 TJ (initial) = 100°C 0.5 ms 1 ms 10 ms 0.1 1000 100 0.00001 0.0001 0.001 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche www.onsemi.com 4 0.01 NVMFS5C466N TYPICAL CHARACTERISTICS 100 50% Duty Cycle R(t) (°C/W) 10 1 20% 10% 5% 2% 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Characteristics DEVICE ORDERING INFORMATION Device Marking Package Shipping† NVMFS5C466NT1G 5C466N DFN5 (Pb−Free) 1500 / Tape & Reel NVMFS5C466NWFT1G 466NWF DFN5 (Pb−Free, Wettable Flanks) 1500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 NVMFS5C466N PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE M 2X 0.20 C D 2 A B D1 2X 0.20 C 3 q E 2 2 c A1 4 TOP VIEW C A RECOMMENDED SOLDERING FOOTPRINT* 0.10 C SIDE VIEW 8X b C A B 0.05 c SEATING PLANE DETAIL A 0.10 C 0.10 DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q 4X E1 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 2X DETAIL A 0.495 4.560 2X 1.530 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN e/2 e L 1 3.200 4 4.530 K PIN 5 (EXPOSED PAD) MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.30 5.15 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ E2 L1 M 1.330 2X 0.905 1 0.965 G 4X D2 1.000 4X 0.750 BOTTOM VIEW 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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