NXH240B120H3Q1PG-R

DATA SHEET www.onsemi.com Si/SiC Hybrid Module – EliteSiC, 3-channel, 1200 V IGBT + SiC Boost, 80 A IGBT and 20 A SiC Diode, Q1 Package NXH240B120H3Q1PG, NXH240B120H3Q1PG-R, NXH240B120H3Q1SG PIM32 (SOLDER−PINS) CASE 180BQ MARKING DIAGRAM The NXH240B120H3Q1PG is a case power module containing a three channel BOOST stage. The integrated field stop trench IGBTs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability. Features • • • • • PIM32 (PRESS−FIT) CASE 180AX 1200 V Ultra Field Stop IGBTs Low Reverse Recovery and Fast Switching SiC Diodes Low Inductive Layout Press−fit Pins Thermistor NXH240B120H3Q1xG ATYYWW NXH240B120H3Q1xG = Specific Device Code x = P or S G = Pb−Free Package AT = Assembly & Test Site Code YYWW = Year and Work Week Code PIN ASSIGNMENTS Typical Applications • Solar Inverters • ESS 21, 22 BYS1 D13 19, 20 BST1 T1 D12 DC+1−2 11, 12 13, 14 D11 16 G1 15 E1 ORDERING INFORMATION DC−1 17, 18 23, 24 BYS2 See detailed ordering and shipping information in the dimensions section on page 12 of this data sheet. D23 25, 26 BST2 T2 D22 NTC1 31 D21 10 G2 NTC2 32 9 E2 DC−2 7, 8 29, 30 BYS3 D33 27, 28 BST3 T3 4 G3 D32 DC+3 1, 2 D31 3 E3 5, 6 DC−3 Figure 1. Schematic Diagram © Semiconductor Components Industries, LLC, 2019 March, 2023 − Rev. 2 1 Publication Order Number: NXH240B120H3Q1PG/D NXH240B120H3Q1PG, NXH240B120H3Q1PG−R, NXH240B120H3Q1SG Table 1. MAXIMUM RATINGS (Note 1) Symbol Value Unit Collector−Emitter Voltage VCES 1200 V Gate−Emitter Voltage VGE ±20 V Rating IGBT (T1, T2, T3) Continuous Collector Current @ Th = 80°C (TJ = 175°C) IC 68 A ICpulse 204 A Maximum Power Dissipation (TJ = 175°C) Ptot 158 W Minimum Operating Junction Temperature TJMIN −40 °C Maximum Operating Junction Temperature TJMAX 150 °C VRRM 1200 V IF 30 A Repetitive Peak Forward Current (TJ = 150°C) IFRM 120 A Maximum Power Dissipation (TJ = 150°C) Ptot 44 W Minimum Operating Junction Temperature TJMIN −40 °C Maximum Operating Junction Temperature TJMAX 150 °C VRRM 1200 V IF 25 A Repetitive Peak Forward Current (TJ = 175°C) IFRM 75 A Maximum Power Dissipation (TJ = 175°C) Ptot 73 W Minimum Operating Junction Temperature TJMIN −40 °C Maximum Operating Junction Temperature TJMAX 175 °C VRRM 1200 V IF 42 A Repetitive Peak Forward Current (TJ = 150°C) IFRM 126 A Maximum Power Dissipation (TJ = 150°C) Ptot 50 W Minimum Operating Junction Temperature TJMIN −40 °C Maximum Operating Junction Temperature TJMAX 150 °C Tstg −40 to 150 °C Vis 3000 VRMS 12.7 mm Pulsed Collector Current (TJ = 175°C) PROTECTION DIODE (D11, D21, D31) Peak Repetitive Reverse Voltage Continuous Forward Current @ Th = 80°C (TJ = 150°C) SILICON CARBIDE BOOST DIODE (D12, D22, D32) Peak Repetitive Reverse Voltage Continuous Forward Current @ Th = 80°C (TJ = 175°C) BYPASS DIODE (D13, D23, D33) Peak Repetitive Reverse Voltage Continuous Forward Current @ Th = 80°C (TJ = 150°C) THERMAL PROPERTIES Storage Temperature range INSULATION PROPERTIES Isolation test voltage, t = 1 sec, 60 Hz Creepage distance Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe Operating parameters. Table 2. RECOMMENDED OPERATING RANGES Rating Symbol Min Max Unit TJ −40 150 °C Module Operating Junction Temperature Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. www.onsemi.com 2 NXH240B120H3Q1PG, NXH240B120H3Q1PG−R, NXH240B120H3Q1SG Table 3. ELECTRICAL CHARACTERISTICS TJ = 25°C unless otherwise noted Test Conditions Symbol Min Typ Max Unit VGE = 0 V, VCE = 1200 V ICES – – 400 mA VGE = 15 V, IC = 80 A, TJ = 25°C VCE(sat) – 1.65 2 V Parameter IGBT (T1, T2, T3) Collector−Emitter Cutoff Current Collector−Emitter Saturation Voltage – 1.85 – Gate−Emitter Threshold Voltage VGE = 15 V, IC = 80 A, TJ = 150°C VGE = VCE, IC = 1.0 mA VGE(TH) 4.50 5.87 6.50 V Gate Leakage Current VGE = 20 V, VCE = 0 V IGES – – 800 nA TJ = 25°C VCE = 800 V, IC = 50 A VGE = +15 V, −9 V, RG = 4.3 W td(on) – 13 – ns tr – 22 – td(off) – 262 – Turn−on Delay Time Rise Time Turn−off Delay Time Fall Time tf – 13 – Turn−on Switching Loss per Pulse Eon – 1258 – Turn off Switching Loss per Pulse Eoff – 1277 – td(on) – 32 – tr – 22 – td(off) – 315 – Turn−on Delay Time Rise Time Turn−off Delay Time TJ = 125°C VCE = 800 V, IC = 50 A VGE = +15 V, −9 V, RG = 4.3 W Fall Time mJ ns tf – 22 – Turn−on Switching Loss per Pulse Eon – 1306 – Turn off Switching Loss per Pulse Eoff – 2221 – Cies – 18151 – Output Capacitance Coes – 345 – Reverse Transfer Capacitance Cres – 294 – VCE = 600 V, IC = 25 A, VGE = ±15 V Qg – 817 – nC Thermal grease, Thickness = 2 Mil ±2%, l = 0.63 W/mK RthJH – 0.60 – °C/W RthJC – 0.29 – °C/W IF = 30 A, TJ = 25°C VF – 1.09 1.3 V – 0.99 – RthJH – 1.60 – °C/W RthJC – 0.98 – °C/W VF – 1.48 1.75 V – 1.99 – trr – 21 – ns Qrr – 84 – mC IRRM – 7 – A di/dt – 1750 – A/ms Err – 65 – mJ trr – 22 – ns Qrr – 89 – mC IRRM – 8 – A di/dt – 1800 – A/ms Err – 99 – mJ Input Capacitance Total Gate Charge Thermal Resistance − chip−to−heatsink Thermal Resistance − chip−to−case VCE = 20 V, VGE = 0 V, f = 10 kHz mJ pF PROTECTION DIODE (D11, D21, D31) Diode Forward Voltage IF = 30 A, TJ = 150°C Thermal Resistance − chip−to−heatsink Thermal Resistance − chip−to−case Thermal grease, Thickness = 2 Mil ±2%, l = 0.63 W/mK SILICON CARBIDE BOOST DIODE (D12, D22, D32) Diode Forward Voltage IF = 20 A, TJ = 25°C IF = 20 A, TJ = 150°C Reverse Recovery Time Reverse Recovery Charge Peak Reverse Recovery Current TJ = 25°C VCE = 800 V, IC = 50 A VGE = +15 V, −9 V, RG = 4.3 W Peak Rate of Fall of Recovery Current Reverse Recovery Energy Reverse Recovery Time Reverse Recovery Charge Peak Reverse Recovery Current TJ = 125°C VCE = 800 V, IC = 50 A VGE = +15 V, −9 V, RG = 4.3 W Peak Rate of Fall of Recovery Current Reverse Recovery Energy www.onsemi.com 3 NXH240B120H3Q1PG, NXH240B120H3Q1PG−R, NXH240B120H3Q1SG Table 3. ELECTRICAL CHARACTERISTICS TJ = 25°C unless otherwise noted Parameter Test Conditions Symbol Min Typ Max Unit Thermal grease, Thickness = 2 Mil ±2%, l = 0.63 W/mK RthJH – 1.30 – °C/W RthJC – 0.85 – °C/W IF = 50 A, TJ = 25°C VF – 1.095 1.3 V – 1.004 – SILICON CARBIDE BOOST DIODE (D12, D22, D32) Thermal Resistance − chip−to−heatsink Thermal Resistance − chip−to−case BYPASS DIODE (D13, D23, D33) Diode Forward Voltage IF = 50 A, TJ = 150°C Thermal grease, Thickness = 2 Mil ±2%, l = 0.63 W/mK RthJH – 1.40 – °C/W RthJC – 0.85 – °C/W Nominal resistance T = 25°C R25 – 5 – kW Nominal resistance T = 100°C Thermal Resistance − chip−to−heatsink Thermal Resistance − chip−to−case THERMISTOR CHARACTERISTICS R100 – 493.3 – W Deviation of R25 DR/R −5 – 5 % Power dissipation PD – 20 – mW – 1.4 – mW/K – 3375 – K Power dissipation constant B−value B(25/50), tolerance ±2% Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 4 NXH240B120H3Q1PG, NXH240B120H3Q1PG−R, NXH240B120H3Q1SG TYPICAL CHARACTERISTICS − IGBT (T1, T2, T3) and Silicon Carbide Schottky Diode (D12, D22, D32) Figure 2. Typical Output Characteristics Figure 3. Typical Output Characteristics Figure 4. Typical Transfer Characteristics Figure 5. Diode Forward Characteristics Figure 6. Typical Turn ON Loss vs. IC Figure 7. Typical Turn OFF Loss vs. IC www.onsemi.com 5 NXH240B120H3Q1PG, NXH240B120H3Q1PG−R, NXH240B120H3Q1SG TYPICAL CHARACTERISTICS − IGBT (T1, T2, T3) and Silicon Carbide Schottky Diode (D12, D22, D32) Figure 8. Typical Turn ON Loss vs. RG Figure 9. Typical Turn OFF Loss vs. RG Figure 10. Typical Reverse Recovery Time vs. IC Figure 11. Typical Reverse Recovery Time vs. RG Figure 12. Typical Turn−On Switching Time vs. IC Figure 13. Typical Turn−Off Switching Time vs. IC www.onsemi.com 6 NXH240B120H3Q1PG, NXH240B120H3Q1PG−R, NXH240B120H3Q1SG TYPICAL CHARACTERISTICS − IGBT (T1, T2, T3) and Silicon Carbide Schottky Diode (D12, D22, D32) Figure 14. Typical Turn−On Switching Time vs. RG Figure 15. Typical Turn−Off Switching Time vs. RG Figure 16. Typical Reverse Recovery Time vs. RG Figure 17. Typical Reverse Recovery Charge vs. RG Figure 18. Typical Reverse Recovery Peak Current vs. RG Figure 19. Typical di/dt vs. RG www.onsemi.com 7 NXH240B120H3Q1PG, NXH240B120H3Q1PG−R, NXH240B120H3Q1SG TYPICAL CHARACTERISTICS − IGBT (T1, T2, T3) and Silicon Carbide Schottky Diode (D12, D22, D32) Figure 20. Typical Reverse Recovery Time vs. IC Figure 21. Typical Reverse Recovery Charge vs. IC Figure 22. Typical Reverse Recovery Current vs. IC Figure 23. Typical di/dt Current Slope vs. IC Figure 24. FBSOA Figure 25. RBSOA www.onsemi.com 8 NXH240B120H3Q1PG, NXH240B120H3Q1PG−R, NXH240B120H3Q1SG TYPICAL CHARACTERISTICS − IGBT (T1, T2, T3) and Silicon Carbide Schottky Diode (D12, D22, D32) Figure 26. Transient Thermal Impedance (T1, T2, T3) Figure 27. Transient Thermal Impedance (D12, D22, D32) Figure 28. Gate Voltage vs. Gate Charge www.onsemi.com 9 NXH240B120H3Q1PG, NXH240B120H3Q1PG−R, NXH240B120H3Q1SG TYPICAL CHARACTERISTICS − Diode (D13, D23, D33) Figure 29. Diode Forward Characteristics Figure 30. Transient Thermal Impedance www.onsemi.com 10 NXH240B120H3Q1PG, NXH240B120H3Q1PG−R, NXH240B120H3Q1SG TYPICAL CHARACTERISTICS − Diode (D11, D21, D31) Figure 31. Diode Forward Characteristics Figure 32. Transient Thermal Impedance Figure 33. Thermistor Characteristic www.onsemi.com 11 NXH240B120H3Q1PG, NXH240B120H3Q1PG−R, NXH240B120H3Q1SG ORDERING INFORMATION Orderable Part Number Marking Package Shipping NXH240B120H3Q1PG, NXH240B120H3Q1PG−R NXH240B120H3Q1PG, NXH240B120H3Q1PG−R Q1 BOOST, Case 180AX Press−fit Pins (Pb−Free) 21 Units / Blister Tray NXH240B120H3Q1SG NXH240B120H3Q1SG Q1 BOOST, Case 180BQ Solder Pins (Pb−Free) 21 Units / Blister Tray www.onsemi.com 12 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PIM30, 71x37.4 CASE 180AD ISSUE E DATE 28 NOV 2017 GENERIC MARKING DIAGRAM* XXXXXXXXXXXXXXXXXXXXXG ATYYWW XXXXX = Specific Device Code G = Pb−Free Package AT = Assembly & Test Site Code YYWW = Year and Work Week Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON07115G Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PIM30 71X37.4 (PRESS FIT) PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PIM32, 71x37.4 (PRESS−FIT) CASE 180AX ISSUE O DATE 25 JAN 2019 GENERIC MARKING DIAGRAM* XXXXXXXXXXXXXXXXXXXXXG ATYYWW XXXXX = Specific Device Code G = Pb−Free Package AT = Assembly & Test Site Code YYWW = Year and Work Week Code DOCUMENT NUMBER: DESCRIPTION: 98AON02449H *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PIM32, 71x37.4 (PRESS−FIT) PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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