NXH80T120L2Q0S2G

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G Q0PACK Module The NXH80T120L2Q0S2/P2G is a power module containing a T−type neutral point clamped (NPC) three level inverter stage. The integrated field stop trench IGBTs and fast recovery diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability. www.onsemi.com Features • • • • • • Low Switching Loss Low VCESAT Compact 65.9 mm x 32.5 mm x 12 mm Package Thermistor Options with pre−applied thermal interface material (TIM) and without pre−applied TIM Options with solderable pins and press−fit pins Q0PACK CASE 180AA PRESS−FIT PINS Q0PACK CASE 180AB SOLDERABLE PINS Typical Applications • Solar Inverter • Uninterruptable Power Supplies MARKING DIAGRAMS NXH80T120L2Q0P2G ATYYWW 15,16 Half Bridge IGBTs & Diodes T1 1200V/80A 17 D1 NXH80T120L2Q0S2G ATYYWW 18 5,14 D2 D3 8,9,10,11 NXH80T120L2Q0S2G = Specific Device Code G = Pb−free Package A = Assembly Site Code T = Test Site Code YYWW = Year and Work Week Code T3 T2 7 6 13 12 Neutral Point IGBTs & Diodes 650V/50A 2 T4 D4 PIN ASSIGNMENTS 1 19 3,4 20 NTC 12 13 Figure 1. Schematic Diagram 14 15 16 11 10 9 8 7 6 17 18 19 20 5 4 3 2 1 ORDERING INFORMATION See detailed ordering and shipping information in the dimensions section on page 13 of this data sheet. © Semiconductor Components Industries, LLC, 2017 May, 2019 − Rev. 6 1 Publication Order Number: NXH80T120L2Q0S2G/D NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G Table 1. MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCES 1200 V Gate−Emitter Voltage VGE ±20 V IC 67 A ICpulse 201 A Maximum Power Dissipation @ Th = 80°C (TJ = 175°C) Ptot 158 W Short Circuit Withstand Time @ VGE = 15 V, VCE = 600 V, TJ v 150°C Tsc 5 ms Minimum Operating Junction Temperature TJMIN −40 °C Maximum Operating Junction Temperature TJMAX 150 °C Collector−Emitter Voltage VCES 600 V Gate−Emitter Voltage VGE ±20 V HALF BRIDGE IGBT Continuous Collector Current @ Th = 80°C (TJ = 175°C) Pulsed Collector Current (TJ = 175°C) NEUTRAL POINT IGBT Continuous Collector Current @ Th = 80°C (TJ = 175°C) Pulsed Collector Current (TJ = 175°C) Maximum Power Dissipation @ Th = 80°C (TJ = 175°C) Short Circuit Withstand Time @ VGE = 15 V, VCE = 400 V, TJ v 150°C IC 49 A ICpulse 147 A Ptot 86 W Tsc 5 ms Minimum Operating Junction Temperature TJMIN −40 °C Maximum Operating Junction Temperature TJMAX 150 °C VRRM 1200 V IF 28 A IFRM 84 A HALF BRIDGE DIODE Peak Repetitive Reverse Voltage Continuous Forward Current @ Th = 80°C (TJ = 175°C) Repetitive Peak Forward Current (TJ = 175°C, tp limited by TJmax) Maximum Power Dissipation @ Th = 80°C (TJ = 175°C) Ptot 73 W Minimum Operating Junction Temperature TJMIN −40 °C Maximum Operating Junction Temperature TJMAX 150 °C VRRM 650 V IF 33 A IFRM 99 A NEUTRAL POINT DIODE Peak Repetitive Reverse Voltage Continuous Forward Current @ Th = 80°C (TJ = 175°C) Repetitive Peak Forward Current (TJ = 175°C, tp limited by TJmax) Maximum Power Dissipation @ Th = 80°C (TJ = 175°C) Ptot 63 W Minimum Operating Junction Temperature TJMIN −40 °C Maximum Operating Junction Temperature TJMAX 150 °C Tstg −40 to 125 °C Vis 3000 VRMS 12.7 mm THERMAL PROPERTIES Storage Temperature range INSULATION PROPERTIES Isolation test voltage, t = 1 sec, 60 Hz Creepage distance Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe Operating parameters. Table 2. RECOMMENDED OPERATING RANGES Rating Symbol Min Max Unit TJ −40 150 °C Module Operating Junction Temperature Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. www.onsemi.com 2 NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G Table 3. ELECTRICAL CHARACTERISTICS TJ = 25°C unless otherwise noted Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, VCE = 1200 V ICES – – 300 mA VGE = 15 V, IC = 80 A, TJ = 25°C VCE(sat) – 2.05 2.85 V – 2.10 – VGE(TH) – 5.45 6.4 V HALF BRIDGE IGBT CHARACTERISTICS Collector−Emitter Cutoff Current Collector−Emitter Saturation Voltage VGE = 15 V, IC = 80 A, TJ = 150°C Gate−Emitter Threshold Voltage VGE = VCE, IC = 1.5 mA Gate Leakage Current VGE = 20 V, VCE = 0 V IGES – – 300 nA TJ = 25°C VCE = 350 V, IC = 60 A VGE = ±15V, RG = 4.7 W td(on) – 61 – ns Turn−on Delay Time Rise Time tr – 28 – td(off) – 205 – tf – 41 – Turn−on Switching Loss per Pulse Eon – 550 – Turn off Switching Loss per Pulse Eoff – 1100 – td(on) – 58 – tr – 30 – td(off) – 230 – Turn−off Delay Time Fall Time TJ = 125°C VCE = 350 V, IC = 60 A VGE = ±15 V, RG = 4.7 W Turn−on Delay Time Rise Time Turn−off Delay Time Fall Time Turn−on Switching Loss per Pulse Turn off Switching Loss per Pulse VCE = 20 V, VGE = 0 V, f = 10 kHz Input Capacitance Output Capacitance Reverse Transfer Capacitance – 63 – – 720 – Eoff – 1700 – Cies – 19400 – Coes – 400 – ns mJ pF Cres – 340 – VCE = 600 V, IC = 80 A, VGE = +15 V Qg – 800 – nC Thermal grease, Thickness = 76 mm ±2%, l = 2.9 W/mK RthJH – 0.60 – °C/W VF – 1.7 2.2 V – 1.6 – Total Gate Charge Thermal Resistance − chip−to−heatsink tf Eon mJ NEUTRAL POINT DIODE CHARACTERISTICS Diode Forward Voltage IF = 60 A, TJ = 25°C IF = 60 A, TJ = 150°C Reverse Recovery Time Reverse Recovery Charge Peak Reverse Recovery Current TJ = 25°C VCE = 350 V, IC = 60 A VGE = ±15 V, RG = 4.7 W Peak Rate of Fall of Recovery Current Reverse Recovery Energy Reverse Recovery Time Reverse Recovery Charge Peak Reverse Recovery Current TJ = 125°C VCE = 350 V, IC = 60 A VGE = ±15 V, RG = 4.7 W – 39 – ns – 1.1 – mC IRRM – 48 – A di/dt – 3400 – A/ms Err – 400 – mJ trr – 78 – ns Qrr – 2.0 – mC IRRM – 59 – A di/dt – 1600 – A/ms Err – 550 – mJ Thermal grease, Thickness = 76 mm ±2%, l = 2.9 W/mK RthJH – 1.50 – °C/W VGE = 0 V, VCE = 600 V ICES – – 250 mA VGE = 15 V, IC = 50 A, TJ = 25°C VCE(sat) – 1.40 1.75 V – 1.50 – Peak Rate of Fall of Recovery Current Reverse Recovery Energy Thermal Resistance − chip−to−heatsink trr Qrr NEUTRAL POINT IGBT CHARACTERISTICS Collector−Emitter Cutoff Current Collector−Emitter Saturation Voltage VGE = 15 V, IC = 50 A, TJ = 150°C Gate−Emitter Threshold Voltage VGE = VCE, IC = 1.2 mA VGE(TH) – 5.45 6.4 V Gate Leakage Current VGE = 20 V, VCE = 0 V IGES – – 200 nA www.onsemi.com 3 NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G Table 3. ELECTRICAL CHARACTERISTICS TJ = 25°C unless otherwise noted Parameter Test Conditions Symbol Min Typ Max Unit TJ = 25°C VCE = 350 V, IC = 60 A VGE = ±15 V, RG = 4.7 W td(on) – 30 – ns tr – 19 – td(off) – 110 – tf – 23 – Turn−on Switching Loss per Pulse Eon – 800 – Turn off Switching Loss per Pulse Eoff – 480 – td(on) – 32 – tr – 18 – td(off) – 120 – tf – 35 – Turn−on Switching Loss per Pulse Eon – 1100 – Turn off Switching Loss per Pulse Eoff – 880 – Cies – 9400 – Output Capacitance Coes – 280 – Reverse Transfer Capacitance Cres – 250 – VCE = 480 V, IC = 50 A, VGE = +15 V Qg – 395 – nC Thermal grease, Thickness = 76 mm ±2%, l = 2.9 W/mK RthJH – 1.10 – °C/W IF = 40 A, TJ = 25°C VF – 2.11 3.10 V NEUTRAL POINT IGBT CHARACTERISTICS Turn−on Delay Time Rise Time Turn−off Delay Time Fall Time Turn−on Delay Time Rise Time Turn−off Delay Time TJ = 125°C VCE = 350 V, IC = 60 A VGE = ±15 V, RG = 4.7 W Fall Time Input Capacitance Total Gate Charge Thermal Resistance − chip−to−heatsink VCE = 20 V, VGE = 0 V, f = 10 kHz mJ ns mJ pF HALF BRIDGE DIODE CHARACTERISTICS Diode Forward Voltage IF = 40 A, TJ = 150°C Reverse recovery time Reverse recovery charge Peak reverse recovery current TJ = 25°C VCE = 350 V, IC = 60 A VGE = ±15 V, RG = 4.7 W Peak rate of fall of recovery current Reverse recovery energy Reverse recovery time Reverse recovery charge Peak reverse recovery current TJ = 125°C VCE = 350 V, IC = 60 A VGE = ±15 V, RG = 4.7 W Peak rate of fall of recovery current Reverse recovery energy – 1.50 – trr – 45 – ns Qrr – 2.7 – mC IRRM – 110 – A di/dt – 7100 – A/ms Err – 1000 – mJ trr – 185 – ns Qrr – 6 – mC IRRM – 150 – A di/dt – 5900 – A/ms Err – 1900 – mJ Thermal grease, Thickness = 76 mm ±2%, l = 2.9 W/mK RthJH – 1.30 – °C/W Nominal resistance T = 25°C R25 – 22 – kW Nominal resistance T = 100°C Thermal Resistance − chip−to−heatsink THERMISTOR CHARACTERISTICS R100 – 1486 – W Deviation of R25 DR/R −5 – 5 % Power dissipation PD – 200 – mW – 2 – mW/K Power dissipation constant B−value B(25/50), tolerance ±3% – 3950 – K B−value B(25/100), tolerance ±3% – 3998 – K Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 4 NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G TYPICAL CHARACTERISTICS − Half Bridge IGBT and Neutral Point Diode 300 TJ = 25°C 11 V IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 300 250 VGE = 20 V to 13 V 200 10 V 150 100 9V 50 0 8V 7V 0 1 2 3 4 200 10 V TJ = 150°C 150 9V 100 8V 50 7V 0 1 2 3 4 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 2. Typical Output Characteristics Figure 3. Typical Output Characteristics 5 100 90 140 80 IF, FORWARD CURRENT 160 120 100 80 60 40 TJ = 150°C 20 0 11 V VCE, COLLECTOR−EMITTER VOLTAGE (V) 180 IC, COLLECTOR CURRENT (A) 250 0 5 VGE = 20 V to 13 V 0 3 6 TJ = 25°C 9 12 70 60 50 40 30 10 0 15 TJ = 150°C 20 0 0.5 1.0 TJ = 25°C 1.5 2.0 VGE, GATE−EMITTER VOLTAGE (V) VF, FORWARD VOLTAGE (V) Figure 4. Typical Transfer Characteristics Figure 5. Diode Forward Characteristics Figure 6. Typical Turn On Loss vs. IC Figure 7. Typical Turn Off Loss vs. IC www.onsemi.com 5 2.5 NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G TYPICAL CHARACTERISTICS − Half Bridge IGBT and Neutral Point Diode Figure 8. Typical On Switching Times vs. IC Figure 9. Typical Off Switching Times vs. IC Figure 10. Typical On Rise Times vs. IC Figure 11. Typical Off Fall Times vs. IC Figure 12. Typical Reverse Recovery Time vs. IC Figure 13. Typical Reverse Recovery Charge vs. IC www.onsemi.com 6 NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G TYPICAL CHARACTERISTICS − Half Bridge IGBT and Neutral Point Diode Figure 14. Typical Reverse Recovery Peak Current vs. IC Figure 15. Typical Diode Current Slope vs. IC 16 VGE, GATE VOLTAGE (V) 14 12 10 8 6 4 VCE = 600 V IC = 80 A 2 0 0 200 400 600 800 QG, GATE CHARGE (nC) Figure 16. Typical Reverse Recovery Energy vs. IC Figure 17. Gate Voltage vs. Gate Charge www.onsemi.com 7 1000 NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G DUTY CYCLE PEAK RESPONSE (°C/W) TYPICAL CHARACTERISTICS − Half Bridge IGBT and Neutral Point Diode 1 50% 20% 0.1 10% 5% 2% 1% 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 1 10 PULSE ON TIME (s) Figure 18. IGBT Transient Thermal Impedance DUTY CYCLE PEAK RESPONSE (°C/W) 10 50% 1 20% 10% 5% 0.1 2% 1% 0.01 Single Pulse 0.00001 0.0001 0.001 0.01 0.1 PULSE ON TIME (s) Figure 19. Diode Transient Thermal Impedance 200 10 1 0.1 1.0 100 ms dc operation Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 10 100 1 ms 1000 160 140 120 100 80 60 40 20 0 10000 VGE = ±15 V, TJ = TJmax − 25°C 0 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 20. T1 & T4 FBSOA 200 400 600 800 1000 1200 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 21. T1 & T4 RBSOA www.onsemi.com 8 IC Chip 180 IC Module 50 ms 100 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 1000 1400 NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G TYPICAL CHARACTERISTICS − Neutral Point IGBT and Half Bridge Diode 300 VGE = 20 V to 15 V IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 300 250 13 V 200 TJ = 25°C 150 11 V 100 10 V 50 0 7V 0 9V 8V 1 2 3 4 TJ = 150°C 150 11 V 100 10 V 9V 8V 7V 50 0 1 2 4 3 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 22. Typical Output Characteristics Figure 23. Typical Output Characteristics 5 100 160 90 140 80 IF, FORWARD CURRENT IC, COLLECTOR CURRENT (A) 13 V VCE, COLLECTOR−EMITTER VOLTAGE (V) 180 120 100 80 60 40 TJ = 150°C 20 0 15 V 200 0 5 VGE = 20 V to 17 V 250 0 3 6 TJ = 25°C 9 12 70 60 50 40 30 10 0 15 TJ = 150°C 20 0 0.5 1.0 TJ = 25°C 1.5 2.0 2.5 VGE, GATE−EMITTER VOLTAGE (V) VF, FORWARD VOLTAGE (V) Figure 24. Typical Transfer Characteristics Figure 25. Diode Forward Characteristics Figure 26. Typical Turn On Loss vs. IC Figure 27. Typical Turn Off Loss vs. IC www.onsemi.com 9 3.0 NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G TYPICAL CHARACTERISTICS − Neutral Point IGBT and Half Bridge Diode Figure 28. Typical On Switching Times vs. IC Figure 29. Typical Off Switching Times vs. IC Figure 30. Typical On Rise Times vs. IC Figure 31. Typical Off Fall Times vs. IC Figure 32. Typical Reverse Recovery Time vs. IC Figure 33. Typical Reverse Recovery Charge vs. IC www.onsemi.com 10 NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G TYPICAL CHARACTERISTICS − Neutral Point IGBT and Half Bridge Diode Figure 34. Typical Reverse Recovery Peak Current vs. IC Figure 35. Typical Diode Current Slope vs. IC 16 VGE, GATE VOLTAGE (V) 14 12 10 8 6 4 VCE = 480 V IC = 50 A 2 0 0 200 400 600 800 QG, GATE CHARGE (nC) Figure 36. Typical Reverse Recovery Energy vs. IC Figure 37. Gate Voltage vs. Gate Charge www.onsemi.com 11 1000 NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G DUTY CYCLE PEAK RESPONSE (°C/W) TYPICAL CHARACTERISTICS − Neutral Point IGBT and Half Bridge Diode 10 1 50% 0.1 20% 10% 5% 2% 0.01 1% Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 1 10 PULSE ON TIME (s) Figure 38. IGBT Transient Thermal Impedance DUTY CYCLE PEAK RESPONSE (°C/W) 10 1 50% 20% 10% 5% 0.1 2% 1% 0.01 Single Pulse 0.00001 0.0001 0.001 0.01 0.1 PULSE ON TIME (s) Figure 39. Diode Transient Thermal Impedance 180 100 ms 10 1 ms Single Nonrepetitive 1 Pulse TC = 25°C Curves must be derated linearly with increase in temperature 0.1 1.0 10 dc operation 100 1000 140 120 100 80 60 40 20 0 VGE = ±15 V, TJ = TJmax − 25°C 0 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 40. T2 & T3 FBSOA 100 200 300 400 500 600 700 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 41. T2 & T3 RBSOA www.onsemi.com 12 IC Chip 50 ms 160 IC Module 100 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 1000 800 NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G TYPICAL CHARACTERISTICS − Thermistor 24K RESISTANCE (W) 20K 16K 12K 8K 4K 0 25 45 65 85 105 125 TEMPERATURE (°C) Figure 42. Thermistor Characteristics ORDERING INFORMATION Orderable Part Number Marking Package Shipping NXH80T120L2Q0P2G NXH80T120L2Q0P2G Q0PACK − Case 180AA (Pb−Free and Halide−Free) 24 Units / Blister Tray NXH80T120L2Q0S2G NXH80T120L2Q0S2G Q0PACK − Case 180AB (Pb−Free and Halide−Free) 24 Units / Blister Tray NXH80T120L2Q0S2TG NXH80T120L2Q0S2TG Q0PACK − Case 180AB with pre−applied thermal interface material (TIM) (Pb−Free and Halide−Free) 24 Units / Blister Tray www.onsemi.com 13 NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G PACKAGE DIMENSIONS PIM20, 55x32.5 / Q0PACK CASE 180AA ISSUE D www.onsemi.com 14 NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G PACKAGE DIMENSIONS PIM20, 55x32.5 / Q0PACK CASE 180AB ISSUE D www.onsemi.com 15 NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G PACKAGE DIMENSIONS PIM20, 55x32.5 / Q0PACK CASE 180AB ISSUE D ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. 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