NXH40T120L3Q1PTG

DATA SHEET www.onsemi.com Q1 3-Phase TNPC Module NXH40T120L3Q1 The NXH40T120L2Q1 is a power module containing a three channel T−type neutral−point clamped (TNPC) circuit. Each channel has two 1200 V, 40 A IGBTs with inverse diodes and two 650 V, 25 A IGBTs with inverse diodes. The module contains an NTC thermistor. Features • • • • • • Low Package Height Compact 82.5 mm x 37.4 mm x 12 mm Package Options with Press−fit Pins and Solder Pins Options with Pre−applied Thermal Interface Material (TIM) and without Pre−applied TIM Thermistor This Device is Pb−Free and is RoHS Compliant Q1 3−TNPC CASE 180AS Solder pins follow similar pattern MARKING DIAGRAM NXH40T120L3Q1xG ATYYWW NXH40T120L3Q1x A T YYWW G Applications • Solar Inverters • UPS • Energy Storage Systems = Device Code = Assembly Site Code = Test Site Code = Year and Work Week Code = Pb−Free Package PIN CONNECTIONS ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Figure 1. NXH40T120L3Q1 Schematic Diagram © Semiconductor Components Industries, LLC, 2017 September, 2021 − Rev. 2 1 Publication Order Number: NXH40T120L3Q1/D NXH40T120L3Q1 MAXIMUM RATINGS (Note 1) Symbol Value Unit Collector*Emitter Voltage VCES 1200 V Gate*Emitter Voltage VGE ±20 V IC 40 A ICpulse 120 A Maximum Power Dissipation (TJ = 175_C) Ptot 145 W Minimum Operating Junction Temperature TJMIN −40 °C Maximum Operating Junction Temperature TJMAX 175 °C VRRM 1200 V IF 25 A Repetitive Peak Forward Current (TJ = 175°C) IFRM 75 A Maximum Power Dissipation (TJ = 175°C) Ptot 55 W Minimum Operating Junction Temperature TJMIN *40 °C Maximum Operating Junction Temperature TJMAX 175 °C Collector*Emitter Voltage VCES 650 V Gate*Emitter Voltage VGE ±20 V IC 42 A ICpulse 126 A Maximum Power Dissipation (TJ = 175°C) Ptot 146 W Minimum Operating Junction Temperature TJMIN −40 °C Maximum Operating Junction Temperature TJMAX 175 °C Tstg *40 to 150 °C Vis 3000 VRMS 12.7 mm Rating IGBT (Q1, Q4, Q5, Q8, Q9, Q12) Continuous Collector Current @ TC = 80°C (TJ = 175°C) Pulsed Collector Current (TJ = 175°C) DIODE (D1, D4, D5, D8, D9, D12) Peak Repetitive Reverse Voltage Continuous Forward Current @ TC = 80°C (TJ = 175°C) IGBT+DIODE (Q2+D2, Q3+D3, Q6+D6, Q7+D7, Q10+D10, Q11+D11) Continuous Collector Current @ TC = 80°C (TJ = 175°C) Pulsed Collector Current (TJ = 175°C) THERMAL PROPERTIES Storage Temperature range INSULATION PROPERTIES Isolation Test Voltage, t = 1 sec, 60 Hz Creepage Distance Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe Operating parameters. RECOMMENDED OPERATING CONDITIONS Rating Module Operating Junction Temperature Symbol Min Max Unit TJ −40 150 °C Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. www.onsemi.com 2 NXH40T120L3Q1 ELECTRICAL CHARACTERISTICS (TJ = 25°C Unless Otherwise Noted) Test Conditions Symbol Min. Typ. Max. Unit VGE = 0 V, VCE = 1200 V ICES – – 400 mA VGE = 15 V, IC = 40 A, TJ = 25°C VCE(sat) – 1.85 2.20 V – 2.25 – Parameter IGBT CHARACTERISTICS (Q1, Q4, Q5, Q8, Q9, Q12) Collector−Emitter Cutoff Current Collector−Emitter Saturation Voltage VGE = 15 V, IC = 40 A , TJ = 150°C Gate−Emitter Threshold Voltage VGE = VCE, IC = 1.5 mA VGE(TH) 4.50 − 6.50 V Gate Leakage Current VGE = 20 V, VCE = 0 V IGES – – 800 nA td(on) – 63 – ns tr – 22 – td(off) – 199 – tf – 23 – Turn−on Switching Loss per Pulse Eon – 560 – Turn off Switching Loss per Pulse Eoff – 338 – td(on) – 59 – tr – 24 – td(off) – 225 – tf – 80 – Turn*on Switching Loss per Pulse Eon – 757 – Turn off Switching Loss per Pulse Eoff – 910 – Input Capacitance Cies – 7753 – Coes – 227 – Cres – 127 – VCE = 350 V, IC = 40 A, VGE = ±15 V Qg – 536 – nC Thermal grease, Thickness ≤ 2.25 Mil, λ = 2.9 W/mK RthJH – 1.01 – °C/W VF – 2.4 2.7 V – 1.7 – trr – 43 – ns Qrr – 756 – mC IRRM – 35 – A di/dt – 750 – A/ms Reverse Recovery Energy Err – 104 – mJ Reverse Recovery Time trr – 129 – ns Qrr – 2702 – mC IRRM – 45 – A di/dt – 407 – A/ms Err – 428 – mJ RthJH – 1.63 – °C/W Turn−on Delay Time Rise Time Turn−off Delay Time Fall Time TJ = 25°C VCE = 350 V, IC = 28 A, VGE = ±15 V, RG = 8 W Turn−on Delay Time Rise Time Turn−off Delay Time Fall Time Output Capacitance TJ = 125°C VCE = 350 V, IC = 28 A, VGE = ±15 V, RG = 8 W VCE = 20 V VGE = 0 V, f = 1 MHz Reverse Transfer Capacitance Total Gate Charge Thermal Resistance * chip−to−heatsink mJ ns mJ pF DIODE CHARACTERISTICS (D1, D4, D5, D8, D9, D12) Diode Forward Voltage IF = 20 A, TJ = 25°C IF = 20 A, TJ = 150°C Reverse Recovery Time Reverse Recovery Charge Peak Reverse Recovery Current Peak Rate of Fall of Recovery Current Reverse Recovery Charge Peak Reverse Recovery Current Peak Rate of Fall of Recovery Current TJ = 25°C VCE = 350 V, IC = 28 A, VGE = ±15 V, RG = 16 W TJ = 125°C VCE = 350 V, IC = 28 A, VGE = ±15 V, RG = 16 W Reverse Recovery Energy Thermal Resistance * chip−to−heatsink Thermal grease, Thickness ≤ 2.25 Mil, λ = 2.9 W/mK www.onsemi.com 3 NXH40T120L3Q1 ELECTRICAL CHARACTERISTICS (TJ = 25°C Unless Otherwise Noted) (continued) Parameter Test Conditions Symbol Min. Typ. Max. Unit VGE = 0 V, VCE = 650 V ICES – – 250 mA VGE = 15 V, IC = 50 A, TJ = 25°C VCE(sat) – 1.50 − V – 1.53 – IGBT CHARACTERISTICS (Q2, Q3, Q6, Q7, Q10, Q11) Collector−Emitter Cutoff Current Collector−Emitter Saturation Voltage VGE = 15 V, IC = 50 A , TJ = 150°C Gate−Emitter Threshold Voltage VGE = VCE, IC = 1.65 mA VGE(TH) 2.60 4.40 6.40 V VGE = 20 V, VCE = 0 V IGES – – 400 nA td(on) – 54 – ns tr – 15 – td(off) – 157 – tf – 12 – Turn−on Switching Loss per Pulse Eon – 416 – Turn off Switching Loss per Pulse Eoff – 321 – td(on) – 52 – tr – 16 – td(off) – 178 – tf – 18 – Turn*on Switching Loss per Pulse Eon – 671 – Turn off Switching Loss per Pulse Eoff – 444 – Input Capacitance Cies – 3137 – Coes – 146 – Cres – 17 – VCE = 350 V, IC = 40 A, VGE = ±15 V Qg – 180 – nC Thermal grease, Thickness ≤ 2.25 Mil, λ = 2.9 W/mK RthJH – 0.995 – °C/W VF – 1.28 − V – 1.18 – VF – 3.05 3.4 V trr – 69 – ns Qrr – 1267 – mC IRRM – 41 – A di/dt – 1599 – A/ms Reverse Recovery Energy Err – 244 – mJ Reverse Recovery Time trr – 111 – ns Qrr – 2323 – mC IRRM – 40 – A di/dt – 470 – A/ms Err – 510 – mJ Gate Leakage Current Turn−on Delay Time Rise Time Turn−off Delay Time Fall Time TJ = 25°C VCE = 350 V, IC = 28 A, VGE = ±15 V, RG = 16 W Turn−on Delay Time Rise Time Turn−off Delay Time Fall Time Output Capacitance TJ = 125°C VCE = 350 V, IC = 28 A, VGE = ±15 V, RG = 16 W VCE = 20 V VGE = 0 V, f = 1 MHz Reverse Transfer Capacitance Total Gate Charge Thermal Resistance * chip−to−heatsink mJ ns mJ pF DIODE CHARACTERISTICS (D2, D3, D6, D7, D10, D11) Diode Forward Voltage IF = 20 A, TJ = 25°C IF = 20 A, TJ = 150°C Combined IGBT + Diode Voltage Drop IF = 20 A, TJ = 25°C Reverse Recovery Time Reverse Recovery Charge Peak Reverse Recovery Current Peak Rate of Fall of Recovery Current Reverse Recovery Charge Peak Reverse Recovery Current Peak Rate of Fall of Recovery Current TJ = 25°C VCE = 350 V, IC = 28 A, VGE = ±15 V, RG = 8 W TJ = 125°C VCE = 350 V, IC = 28 A, VGE = ±15 V, RG = 8 W Reverse Recovery Energy www.onsemi.com 4 NXH40T120L3Q1 ELECTRICAL CHARACTERISTICS (TJ = 25°C Unless Otherwise Noted) (continued) Parameter Test Conditions Symbol Min. Typ. Max. Unit Nominal resistance T = 25°C R25 22 kW Nominal resistance T = 100°C R100 1468 W THERMISTOR CHARACTERISTICS Deviation of R25 R/R Power dissipation PD Power dissipation constant 5 *5 % 200 mW 2 mW/K B−value B(25/50), tolerance ±3% 3950 K B−value B(25/100), tolerance ±3% 3998 K Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Orderable Part Number Marking Package Shipping NXH40T120L3Q1PG NXH40T120L3Q1PG Q1 3−Phase TNPC * Case 180AS Press−fit Pins (Pb−Free) 21 Units / Blister Tray NXH40T120L3Q1SG NXH40T120L3Q1SG Q1 3−Phase TNPC * Case 180BN Solder Pins (Pb−Free) 21 Units / Blister Tray NXH40T120L3Q1PTG NXH40T120L3Q1PTG Q1 3−Phase TNPC * Case 180AS Press−fit Pins (Pb−Free) 21 Units / Blister Tray www.onsemi.com 5 NXH40T120L3Q1 TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT (Q1, Q4, Q5, Q8, Q9, Q12) AND DIODE (D1, D4, D5, D8, D9, D12) Figure 2. Typical Output Characteristics Figure 3. Typical Output Characteristics Figure 4. Typical Transfer Characteristics Figure 5. Diode Forward Characteristics www.onsemi.com 6 NXH40T120L3Q1 TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT (Q1, Q4, Q5, Q8, Q9, Q12) AND DIODE (D1, D4, D5, D8, D9, D12) Figure 6. Transient Thermal Impedance (Half Bridge IGBT) Figure 7. Transient Thermal Impedance (Half Bridge Diode) www.onsemi.com 7 NXH40T120L3Q1 TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT (Q1, Q4, Q5, Q8, Q9, Q12) AND DIODE (D1, D4, D5, D8, D9, D12) Figure 8. FBSOA Figure 9. RBSOA Figure 10. Gate Voltage vs. Gate Charge www.onsemi.com 8 NXH40T120L3Q1 TYPICAL CHARACTERISTICS − NP IGBT + DIODE (Q2+D2, Q3+D3, Q6+D6, Q7+D7, Q10+D10, Q11+D11) Figure 11. Typical Output Characteristics (IC versus VDT) Figure 12. Typical Output Characteristics (IC versus VDT) Figure 13. Typical Transfer Characteristics www.onsemi.com 9 NXH40T120L3Q1 TYPICAL CHARACTERISTICS − NP IGBT + DIODE (Q2+D2, Q3+D3, Q6+D6, Q7+D7, Q10+D10, Q11+D11) Figure 14. Transient Thermal Impedance (Neutral Point IGBT + Diode) Figure 15. FBSOA (NP IGBT + Diode) Figure 16. RBSOA (NP IGBT + Diode) Figure 17. Gate Voltage vs. Gate Charge www.onsemi.com 10 NXH40T120L3Q1 TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT COMMUTATES NEUTRAL POINT DIODE Figure 18. Typical Switching Loss EON vs. IC Figure 19. Typical Switching Loss EOFF vs. IC Figure 20. Typical Switching Loss EON vs. RG Figure 21. Typical Switching Loss EOFF vs. RG Figure 22. Typical Switching Time TDOFF vs. IC Figure 23. Typical Switching Time TDON vs. IC www.onsemi.com 11 NXH40T120L3Q1 TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT COMMUTATES NEUTRAL POINT DIODE Figure 24. Typical Switching Time TDOFF vs. RG Figure 25. Typical Switching Time TDON vs. RG Figure 26. Typical Reverse Recovery Energy Loss vs. IC Figure 27. Typical Reverse Recovery Energy Loss vs. RG Figure 28. Typical Reverse Recovery Time vs. RG Figure 29. Typical Reverse Recovery Charge vs. RG www.onsemi.com 12 NXH40T120L3Q1 TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT COMMUTATES NEUTRAL POINT DIODE Figure 30. Typical Reverse Recovery Peak Current vs. RG Figure 31. Typical di/dt vs. RG Figure 32. Typical Reverse Recovery Time vs. IC Figure 33. Typical Reverse Recovery Charge vs. IC Figure 34. Typical Reverse Recovery Current vs. IC Figure 35. Typical di/dt Current Slope vs. IC www.onsemi.com 13 NXH40T120L3Q1 TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT COMMUTATES HALF BRIDGE DIODE Figure 36. Typical Turn ON Loss vs. IC Figure 37. Typical Turn OFF Loss vs. IC Figure 38. Typical Turn ON Loss vs. RG Figure 39. Typical Turn OFF Loss vs. RG Figure 40. Typical Turn−Off Switching Time vs. IC Figure 41. Typical Turn−On Switching Time vs. IC www.onsemi.com 14 NXH40T120L3Q1 TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT COMMUTATES HALF BRIDGE DIODE Figure 42. Typical Turn−Off Switching Time vs. RG Figure 43. Typical Turn−On Switching Time vs. RG Figure 44. Typical Reverse Recovery Energy Loss vs. IC Figure 45. Typical Reverse Recovery Energy Loss vs. RG Figure 46. Typical Reverse Recovery Time vs. RG Figure 47. Typical Reverse Recovery Charge vs. RG www.onsemi.com 15 NXH40T120L3Q1 TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT COMMUTATES HALF BRIDGE DIODE Figure 48. Typical Reverse Recovery Peak Current vs. RG Figure 49. Typical di/dt vs. RG Figure 50. Typical Reverse Recovery Time vs. IC Figure 51. Typical Reverse Recovery Charge vs. IC Figure 52. Typical Reverse Recovery Current vs. IC Figure 53. Typical di/dt Current Slope vs. IC www.onsemi.com 16 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PIM44, 71x37.4 CASE 180AS ISSUE O DATE 25 JUN 2018 DOCUMENT NUMBER: 98AON92314G DESCRIPTION: PIM44, 71x37.4 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com PIM44, 71x37.4 CASE 180AS ISSUE O DATE 15 JUN 2018 GENERIC MARKING DIAGRAM* XXXXXXXXXXXXXXXXXXXXXG ATYYWW XXXXX = Specific Device Code G = Pb−Free Package AT = Assembly & Test Site Code YYWW = Year and Work Week Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: 98AON92314G DESCRIPTION: PIM44, 71x37.4 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2018 2 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PIM44, 71x37.4 (SOLDER PINS) CASE 180BN ISSUE O DATE 08 OCT 2019 GENERIC MARKING DIAGRAM* XXXXXXXXXXXXXXXXXXXXXG ATYYWW XXXXX = Specific Device Code G = Pb−Free Package AT = Assembly & Test Site Code YYWW = Year and Work Week Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON12615H Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PIM44, 71x37.4 (SOLDER PINS) PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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