NXH50M65L4Q1PTG

DATA SHEET www.onsemi.com Q1PACK Module 50 A, 650 V Module NXH50M65L4Q1SG, NXH50M65L4Q1PTG This high−density, integrated power module combines high−performance IGBTs with rugged anti−parallel diodes. Features • • • • • PIM27, 71x37.4 (SOLDER PIN) CASE 180CA Extremely Efficient Trench with Fieldstop Technology Low Switching Loss Reduces System Power Dissipation Module Design Offers High Power Density Low Inductive Layout Q1PACK Packages with Solder and Pressfit Pins PIM27, 71x37.4 (PRESSFIT PIN) CASE 180CP MARKING DIAGRAM XXXXXXXXXXXXXXXXXXXXXG ATYYWW Typical Applications • Solar Inverters • Uninterruptable Power Supplies XXXXX G AT YYWW 7, 8, 25, 26 DC+ = Specific Device Code = Pb−Free Package = Assembly & Test Site Code = Year and Work Week Code ORDERING INFORMATION See detailed ordering and shipping information on page 9 of this data sheet. T12 T14 D20 6 G12 1 G14 5 S12 D22 2 S14 D21 15, 16 Ph2 17, 18 Ph1 T11 T21 D12 14 S21 11 G11 12 S11 T22 13 G21 27 A20 D14 20 G22 T13 19 S22 22 G13 21 S13 NTC 3 NTC1 4 NTC2 9, 10 DC−1 23,24 DC−2 Figure 1. Schematic Figure 2. Pin Assignments © Semiconductor Components Industries, LLC, 2020 March, 2021 − Rev. 2 1 Publication Order Number: NXH50M65L4Q1SG/D NXH50M65L4Q1SG, NXH50M65L4Q1PTG ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit VCES 650 V IC 48 A Pulsed collector current, Tpulse limited by Tjmax ICM 144 A Power Dissipation Per IGBT Tj = Tjmax, Th = 80°C Ptot 72 W Gate−emitter voltage VGE ±20 V TJ 175 °C VRRM 650 V IF 50 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 225 A Power Dissipation Per Diode Tj = Tjmax, Th = 80°C Ptot 86 W Maximum Junction Temperature TJ 175 °C TVJ OP −40 to (Tjmax − 25) °C Tstg −40 to 125 °C Vis 4000 Vac 12.7 mm IGBT (T11, T12, T13, T14, T21, T22) Collector−emitter voltage Collector current @ Th = 80°C (per IGBT) Maximum Junction Temperature DIODE (D12, D14, D20, D21, D22) Peak Repetitive Reverse Voltage Forward Current, DC @ Th = 80°C (per Diode) THERMAL PROPERTIES Operating Temperature under switching condition Storage Temperature range INSULATION PROPERTIES Isolation test voltage, t = 2 min, 60 Hz Creepage distance Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Condition Symbol Min Typ Max Unit ICES – – 300 mA IGBT (T11, T12, T13, T14, T21, T22) Collector−emitter cutoff current VGE = 0 V, VCE = 650 V Collector−emitter saturation voltage VGE = 15 V, IC = 50 A, Tj = 25°C VGE = 15 V, IC = 50 A, Tj = 150°C VCE(sat) – – 1.56 1.76 2.22 – V Gate−emitter threshold voltage VGE = VCE, IC = 50mA VGE(TH) 3.1 4.45 5.2 V Gate leakage current VGE = 20 V, VCE = 0 V IGES – – 400 nA Turn−on delay time Tj = 25°C VCE =350 V, IC = 50 A VGE = 15 V, −9 V, RG = 6 W td(on) – 14 – ns tr – 20 – td(off) – 68 – tf – 20 – Turn on switching loss Eon – 0.46 – Turn off switching loss Eoff – 0.44 – td(on) – 16 – Rise time Turn−off delay time Fall time Turn−on delay time Rise time Tj = 125°C VCE = 350 V, IC = 50 A VGE = 15 V, −9 V, RG = 6 W Turn−off delay time Fall time tr – 23 – td(off) – 78 – tf – 52 – Turn on switching loss Eon – 0.78 – Turn off switching loss Eoff – 0.60 – www.onsemi.com 2 mJ ns mJ NXH50M65L4Q1SG, NXH50M65L4Q1PTG ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) (continued) Parameter Test Condition Symbol Min Typ Max Unit Cies – 3137 – pF Output capacitance Coes – 146 – Reverse transfer capacitance Cres – 17 – IGBT (T11, T12, T13, T14, T21, T22) Input capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Gate charge total VCE = 350 V, IC = 40 A, VGE = ±15 V Qg – 180 – nC Thermal Resistance − chip−to−heatsink Thermal grease, Thickness = 2.1 Mil ±2% l = 2.9 W/mK RthJH – 1.32 – °C/W RthJC – 0.96 – °C/W VF – – 2.25 1.7 2.7 – V Reverse Recovery Time trr – 28 – ns Reverse Recovery Current Qrr – 281 – nc Thermal Resistance − chip−to−case IGBT INVERSE DIODE (D12, D14, D21, D22) Forward voltage Peak Reverse Recovery Current IF = 50 A, Tj = 25°C IF = 50 A, Tj = 175°C Tj = 25°C VCE = 350 V, IC = 50 A VGE = 15 V, −9 V, RG = 6 W Irrm – 18 – A Di/dtmax – 1.42 – A/ms Err – 33 – mJ Reverse Recovery Time trr – 65 – ns Reverse Recovery Current Qrr – 1094 – nc Peak Rate of Fall of Recovery Current Reverse Recovery Energy Peak Reverse Recovery Current Peak Rate of Fall of Recovery Current Tj = 125°C VCE = 350 V, IC = 50 A VGE = 15 V, −9 V, RG = 6 W Reverse Recovery Energy Thermal Resistance − chip−to−heatsink Thermal Resistance − chip−to−case Thermal grease, Thickness = 2.1 Mil ±2% l = 2.9 W/mK Irrm – 33 – A Di/dtmax – 1.32 – A/ms Err – 198 – mJ RthJH – 1.10 – °C/W RthJC – 0.79 – °C/W VF – – 2.25 1.7 2.7 – V DIODE (D20) Forward voltage IF = 50 A, Tj = 25°C IF = 50 A, Tj = 175°C Reverse leakage current VCE = 650 V, VGE = 0 V Thermal Resistance − chip−to−heatsink Thermal grease, Thickness = 2.1 Mil ±2% l = 2.9 W/mK Thermal Resistance − chip−to−case Ir – – 300 mA RthJH – 1.10 – °C/W RthJC – 0.79 – °C/W THERMISTOR CHARACTERISTICS Nominal resistance T = 25°C R25 − 22 − kW Nominal resistance T = 100°C R100 − 1486 − W Deviation of R25 R/R −5 − 5 % Power dissipation PD − 200 − mW − 2 − mW/°C Power dissipation constant B−value B (25/50), tol ±3% − − 3950 °C B−value B (25/100), tol ±3% − − 3998 °C − − B NTC reference Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 NXH50M65L4Q1SG, NXH50M65L4Q1PTG TYPICAL CHARACTERISTICS − IGBT (T11, T12, T13, T14, T21, T22) 200 TJ = 25°C 180 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 200 VGE = 7.000 V VGE = 8.000 V VGE = 9.000 V VGE = 10.00 V VGE = 11.00 V VGE = 13.00 V VGE = 15.00 V VGE = 17.00 V VGE = 19.00 V VGE = 20.00 V 160 140 120 100 80 60 40 20 0 0 1 2 3 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE = 7.000 V VGE = 8.000 V VGE = 9.000 V VGE = 10.00 V VGE = 11.00 V VGE = 13.00 V VGE = 15.00 V VGE = 17.00 V VGE = 19.00 V VGE = 20.00 V 160 140 120 100 80 60 40 20 0 4 TJ = 150°C 180 0 Figure 3. Typical Output Characteristics 3 4 160 180 IF, FORWARD CURRENT (A) IC, COLLECTOR CURRENT (A) 2 Figure 4. Typical Output Characteristics 200 160 140 120 100 80 60 40 TJ = 25°C TJ = 125°C TJ = 150°C 20 0 1 VCE, COLLECTOR−EMITTER VOLTAGE (V) 0 1 2 3 4 5 6 7 VGE, GATE−EMITTER VOLTAGE (V) 140 120 100 80 60 40 0 8 TJ = 25°C TJ = 125°C TJ = 150°C 20 0 Figure 5. Typical Transfer Characteristics 1 2 VF, FORWARD VOLTAGE (V) 3 4 Figure 6. Diode Forward Characteristics TYPICAL CHARACTERISTICS − (T11, T12, T13, T14) IGBT COMMUTATES D21, D22 DIODE 1200 EOFF, TURN OFF LOSS (mJ) 1000 EON, TURN ON LOSS (mJ) 1000 VGE = +15 V, −9 V VCE = 350 V Rg = 6 W 25°C 125°C 800 600 400 200 0 0 10 20 30 40 IC (A) 50 60 70 VGE = +15 V, −9 V 900 VCE = 350 V 800 Rg = 6 W 600 500 400 300 200 100 0 80 25°C 125°C 700 0 Figure 7. Typical Turn ON Loss vs. IC 10 20 30 40 IC (A) 50 60 Figure 8. Typical Turn OFF Loss vs. IC www.onsemi.com 4 70 80 NXH50M65L4Q1SG, NXH50M65L4Q1PTG TYPICAL CHARACTERISTICS − (T11, T12, T13, T14) IGBT COMMUTATES D21, D22 DIODE (CONTINUED) 1000 900 EOFF, TURN OFF LOSS (mJ) EON, TURN ON LOSS (mJ) 1000 VGE = +15 V, −9 V VCE = 350 V IC = 50 A 800 700 25°C 125°C 600 500 400 5 10 Rg (W) 15 800 400 200 5 20 10 Rg (W) 15 20 Figure 10. Typical Turn OFF Loss vs. RG 150 40 VGE = +15 V, −9 V 35 VCE = 350 V Rg = 6 W 30 25°C 125°C 25 25°C 125°C VGE = +15 V, −9 V VCE = 350 V Rg = 6 W TIME (ns) TIME (ns) 25°C 125°C 600 Figure 9. Typical Turn ON Loss vs. RG 100 VGE = +15 V, −9 V VCE = 350 V IC = 50 A Td(off) 50 tr 20 Td(on) 15 10 tf 5 0 0 10 20 30 40 50 60 IC, COLLECTOR CURRENT (A) 70 0 0 80 Figure 11. Typical Turn−Off Switching Time vs. IC TIME (ns) TIME (ns) Td(off) 25 Td(on) 20 tf 15 VGE = +15 V, −9 V VCE = 350 V IC = 50 A 25°C 125°C 20 5 80 tr 30 60 0 70 35 80 40 20 30 40 50 60 IC, COLLECTOR CURRENT (A) Figure 12. Typical Turn−On Switching Time vs. IC 160 VGE = +15 V, −9 V 140 VCE = 350 V IC = 50 A 120 25°C 125°C 100 10 10 15 Rg, GATE RESISTOR (W) 10 5 20 Figure 13. Typical Turn−Off Switching Time vs. Rg 10 15 Rg, GATE RESISTOR (W) Figure 14. Typical Turn−On Switching Time vs. Rg www.onsemi.com 5 20 NXH50M65L4Q1SG, NXH50M65L4Q1PTG TYPICAL CHARACTERISTICS − (T21, T22) IGBT COMMUTATES D20 DIODE EON, TURN ON LOSS (mJ) 800 700 1000 VGE = +15 V, −9 V VCE = 350 V Rg = 6 W 25°C 125°C 600 500 400 300 200 100 0 0 10 20 30 VGE = +15 V, −9 V VCE = 350 V Rg = 6 W 900 EOFF, TURN OFF LOSS (mJ) 900 40 50 IC (A) 60 70 80 800 25°C 125°C 700 600 500 400 300 200 100 0 0 90 10 Figure 15. Typical Turn ON Loss vs. IC 30 40 IC (A) 50 60 80 1000 600 25°C 125°C EOFF, TURN OFF LOSS (mJ) 700 VGE = +15 V, −9 V VCE = 350 V IC = 50 A 500 400 300 200 5 10 Rg (W) 15 VGE = +15 V, −9 V VCE = 350 V IC = 50 A 900 800 25°C 125°C 700 600 500 400 300 200 5 20 Figure 17. Typical Turn ON Loss vs. RG 10 80 25°C 125°C 70 60 TIME (ns) TIME (ns) VGE = +15 V, −9 V VCE = 350 V Td(off) Rg = 6 W 100 Rg (W) 15 50 50 VGE = +15 V, −9 V VCE = 350 V Rg = 6 W 25°C 125°C tr 40 30 20 tf Td(on) 10 10 20 30 40 50 60 IC, COLLECTOR CURRENT (A) 20 Figure 18. Typical Turn OFF Loss vs. RG 150 0 0 70 Figure 16. Typical Turn OFF Loss vs. IC 800 EON, TURN ON LOSS (mJ) 20 70 0 0 80 Figure 19. Typical Turn−Off Switching Time vs. IC 20 40 60 IC, COLLECTOR CURRENT (A) Figure 20. Typical Turn−On Switching Time vs. IC www.onsemi.com 6 80 NXH50M65L4Q1SG, NXH50M65L4Q1PTG TYPICAL CHARACTERISTICS − (T21, T22) IGBT COMMUTATES D20 DIODE (CONTINUED) 180 50 45 td(off) TIME (ns) TIME (ns) VGE = +15 V, −9 V 160 VCE = 350 V IC = 50 A 140 25°C 120 125°C 100 80 60 tr VGE = +15 V, −9 V 40 VCE = 350 V IC = 50 A 35 25°C 125°C 30 tf 40 td(on) 25 20 0 5 10 15 Rg, GATE RESISTOR (W) 20 5 20 Figure 21. Typical Turn−Off Switching Time vs. Rg 10 15 Rg, GATE RESISTOR (W) 20 Figure 22. Typical Turn−On Switching Time vs. Rg Err, REVERSE RECOVERY ENERGY (mJ) Err, REVERSE RECOVERY ENERGY (mJ) TYPICAL CHARACTERISTICS − DIODE 300 VGE = +15 V, −9 V VCE = 350 V Rg = 6 W 250 25°C 125°C 200 150 100 50 0 0 10 20 30 40 IC (A) 50 60 70 80 Qrr, REVERSE RECOVERY CHARGE (nC) trr, REVERSE RECOVERY TIME (ns) 200 VGE = +15 V, −9 V VCE = 350 V IC = 50 A 150 100 25°C 125°C 50 0 5 10 15 20 Figure 24. Typical Reverse Recovery Energy Loss vs. RG 100 VGE = +15 V, −9 V 90 VCE = 350 V IC = 50 A 80 25°C 125°C 70 1400 1200 1000 60 50 40 30 5 250 Rg (W) Figure 23. Typical Reverse Recovery Energy Loss vs. IC 20 300 10 15 Rg, GATE RESISTOR (W) 20 Figure 25. Typical Reverse Recovery Time vs. Rg 800 VGE = +15 V, −9 V VCE = 350 V IC = 50 A 600 25°C 125°C 400 200 0 5 10 15 Rg, GATE RESISTOR (W) 20 Figure 26. Typical Reverse Recovery Charge vs. Rg www.onsemi.com 7 NXH50M65L4Q1SG, NXH50M65L4Q1PTG 40 Di/dt, DIODE CURRENT SLOPE (A/ms) Irrm, REVERSE RECOVERY CURRENT (ms) TYPICAL CHARACTERISTICS − DIODE (CONTINUED) VGE = +15 V, −9 V VCE = 350 V IC = 50 A 1,45 35 VGE = +15 V, −9 V VCE = 350 V IC = 50 A 30 25 1,4 25°C 125°C 1,35 25°C 125°C 1,3 1,25 20 15 10 1,5 1,2 1,15 5 10 15 20 Rg, GATE RESISTOR (W) 1,1 5 10 15 Rg, GATE RESISTOR (W) Figure 27. Typical Reverse Recovery Peak Current vs. Rg 20 Figure 28. Typical di/dt vs. Rg TYPICAL CHARACTERISTICS Ic Module 80 VGS (V) Ic Chip 100 60 40 20 VGE = +15 V −9 V, TJ = Tjmax − 25°C 0 0 100 200 300 400 500 600 VCE, COLLECTOR−EMITTER VOLTAGE (V) 700 15 13 11 9 7 5 3 1 −1 −3 −5 −7 −9 −11 −13 −15 VCE = 350 V 0 50 100 Figure 30. IGBT Gate Charge 1000 50 ms 100 100 ms 1 ms 10 DC 1 0.1 0.01 Single Nonrepetitive Pulse TC = 25°C, Curves must be derated linearly with increase in temperature 1 150 Charge (nC) Figure 29. RBSOA Reverse Safe Operating Area IC COLLECTOR CURRENT (A) IC, COLLECTORCURRENT (A) 120 10 100 VCE COLLECTOR−EMITTER VOLTAGE (V) Figure 31. IGBT Safe Operating Area www.onsemi.com 8 1000 200 NXH50M65L4Q1SG, NXH50M65L4Q1PTG DUTY CYCLE PEAK RESPONSE (°C/W) TYPICAL THERMAL CHARACTERISTICS 10,0E+0 1,0E+0 Single pulse @ 1% duty cycle @ 2% duty cycle 100,0E−3 @ 5% duty cycle @ 10% duty cycle @ 20% duty cycle @ 50% duty cycle 10,0E−3 100,0E−6 1,0E−3 10,0E−3 100,0E−3 1,0E+0 10,0E+0 100,0E+0 PULSE ON TIME (s) DUTY CYCLE PEAK RESPONSE (°C/W) Figure 32. Transient Thermal Impedance – IGBT 10,0E+0 1,0E+0 Single pulse @ 1% duty cycle @ 2% duty cycle 100,0E−3 @ 5% duty cycle @ 10% duty cycle @ 20% duty cycle @ 50% duty cycle 10,0E−3 100,0E−6 1,0E−3 10,0E−3 1,0E+0 100,0E−3 10,0E+0 PULSE ON TIME (s) Figure 33. Transient Thermal Impedance – Diode ORDERING INFORMATION Device Package Type Status Shipping NXH50M65L4Q1SG (Solder Pin) PIM27, 71x37.4 Q1PACK In Development 21 Units / BTRAY NXH50M65L4Q1PTG (Pressfit Pin) PIM27, 71x37.4 Q1PACK In Development 21 Units / BTRAY www.onsemi.com 9 100,0E+0 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PIM27, 71x37.4 (SOLDER PIN) CASE 180CA ISSUE B DOCUMENT NUMBER: DESCRIPTION: 98AON20006H DATE 14 DEC 2022 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PIM27, 71X37.4 (SOLDER PIN) PAGE 1 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PIM27, 71x37.4 (SOLDER PIN) CASE 180CA ISSUE B DATE 14 DEC 2022 GENERIC MARKING DIAGRAM* XXXXXXXXXXXXXXXXXXXXXG ATYYWW FRONTSIDE MARKING 2D CODE BACKSIDE MARKING XXXXX = Specific Device Code G = Pb−Free Device AT = Assembly & Test Site Code YYWW = Year and Work Week Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON20006H Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PIM27, 71X37.4 (SOLDER PIN) PAGE 2 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PIM27, 71x37.4 (PRESSFIT PIN) CASE 180CP ISSUE A DATE 20 DEC 2022 GENERIC MARKING DIAGRAM* XXXXXXXXXXXXXXXXXXXXXX ATYYWW XXXXX = Specific Device Code AT = Assembly & Test Site Code YYWW = Year and Work Week Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON26650H Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PIM27, 71X37.4 (PRESSFIT PIN) PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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