DATA SHEET
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Si/SiC Hybrid Modules –
EliteSiC, Dual Boost,
1200 V, 50 A IGBT + 1200 V,
20 A SiC Diode, Q0 Package
Q0BOOST
CASE 180AJ
SOLDER PINS
NXH100B120H3Q0,
NXH100B120H3Q0PG-R
The NXH100B120H3Q0 is a power module containing a dual boost
stage. The integrated field stop trench IGBTs and SiC Diodes provide
lower conduction losses and switching losses, enabling designers to
achieve high efficiency and superior reliability.
Features
•
•
•
•
•
•
•
1200 V Ultra Field Stop IGBTs
Low Reverse Recovery and Fast Switching SiC Diodes
1600 V Bypass and Anti−parallel Diodes
Low Inductive Layout
Solderable Pins or Press−Fit Pins
Thermistor
Options with Pre−Applied Thermal Interface Material (TIM) and
Without Pre−Applied TIM
Q0BOOST
CASE 180BF
PRESS−FIT PINS
MARKING DIAGRAM
NXH100B120H3Q0xxG
ATYYWW
xx
YYWW
A
T
G
= P, PT, S or ST
= Year and Work Week Code
= Assembly Site Code
= Test Site Code
= Pb−Free Package
PIN CONNECTIONS
Typical Applications
• Solar Inverter
• Uninterruptible Power Supplies
• Energy Storage Systems
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of
this data sheet.
Figure 1. NXH100B120H3Q0xG/PG−R Schematic
Diagram
© Semiconductor Components Industries, LLC, 2016
March, 2023 − Rev. 8
1
Publication Order Number:
NXH100B120H3Q0/D
NXH100B120H3Q0, NXH100B120H3Q0PG−R
ABSOLUTE MAXIMUM RATINGS (Note 1) TJ = 25°C Unless Otherwise Noted
Symbol
Value
Unit
Collector−Emitter Voltage
VCES
1200
V
Gate−Emitter Voltage
VGE
±20
V
Continuous Collector Current @ TC < 80°C (TJ = 175°C)
IC1
61
A
Continuous Collector Current @ TC < 102°C (TJ = 175°C)
IC2
50
A
ICpulse
150
A
Ptot
186
W
Minimum Operating Junction Temperature
TJMIN
−40
°C
Maximum Operating Junction Temperature
TJMAX
150
°C
VRRM
1200
V
Continuous Forward Current @ TC < 80°C (TJ = 175°C)
IF1
34
A
Continuous Forward Current @ TC < 132°C (TJ = 175°C)
IF2
20
A
Maximum Power Dissipation @ TC = 80°C (TJ = 175°C)
Ptot
114
W
Surge Forward Current (60 Hz single half−sine wave)
IFSM
185
A
I2t
142
A2s
Minimum Operating Junction Temperature
TJMIN
−40
°C
Maximum Operating Junction Temperature
TJMAX
150
°C
VRRM
1600
V
IF1
58
A
Rating
BOOST IGBT
Pulsed Collector Current (TJ = 175°C)
Maximum Power Dissipation @ TC = 80°C (TJ = 175°C)
BOOST DIODE
Peak Repetitive Reverse Voltage
I2t
− value (60 Hz single half−sine wave)
BYPASS DIODE / IGBT PROTECTION DIODE
Peak Repetitive Reverse Voltage
Continuous Forward Current @ TC < 80°C (TJ = 175°C)
Continuous Forward Current @ TC < 141°C (TJ = 175°C)
IF2
25
A
Repetitive Peak Forward Current (TJ = 175°C, tp limited by TJmax)
IFRM
75
A
Maximum Power Dissipation @ TC = 80°C (TJ = 175°C)
Ptot
91
W
Minimum Operating Junction Temperature
TJMIN
−40
°C
Maximum Operating Junction Temperature
TJMAX
150
°C
Tstg
−40 to 125
°C
Vis
3000
VRMS
12.7
mm
THERMAL PROPERTIES
Storage Temperature range
INSULATION PROPERTIES
Isolation test voltage, t = 1 sec, 60 Hz
Creepage distance
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
RECOMMENDED OPERATING RANGES
Rating
Symbol
Min
Max
Unit
TJ
−40
150
°C
Module Operating Junction Temperature
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
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2
NXH100B120H3Q0, NXH100B120H3Q0PG−R
ELECTRICAL CHARACTERISTICS TJ = 25°C Unless Otherwise Noted
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
ICES
–
–
200
mA
VCE(sat)
–
1.77
2.3
V
BOOST IGBT CHARACTERISTICS
Collector−Emitter Cutoff Current
VGE = 0 V, VCE = 1200 V
Collector−Emitter Saturation Voltage
VGE = 15 V, IC = 50 A, TJ = 25°C
–
1.93
–
Gate−Emitter Threshold Voltage
VGE = VCE, IC = 1 mA
VGE(TH)
4.6
5.27
6.5
V
Gate Leakage Current
VGE = 20 V, VCE = 0 V
IGES
–
−
800
nA
Turn−on Delay Time
TJ = 25°C
VCE = 700 V, IC = 50 A VGE = ±15 V,
RG = 4 W
td(on)
–
44
–
ns
tr
–
16
–
td(off)
–
203
–
VGE = 15 V, IC = 50 A, TJ = 150°C
Rise Time
Turn−off Delay Time
Fall Time
tf
–
23
–
Turn−on Switching Loss per Pulse
Eon
–
700
–
Turn−off Switching Loss per Pulse
Eoff
–
1500
–
td(on)
–
43
–
tr
–
18
–
td(off)
–
233
–
Turn−on Delay Time
Rise Time
TJ = 125°C
VCE = 700 V, IC = 50 A VGE = ±15 V,
RG = 4 W
Turn−off Delay Time
Fall Time
ns
tf
–
58
–
Turn−on Switching Loss per Pulse
Eon
–
800
–
Turn−off Switching Loss per Pulse
Eoff
–
2600
–
Cies
–
9075
–
Output Capacitance
Coes
–
173
–
Reverse Transfer Capacitance
Cres
–
147
–
Qg
–
409
–
nC
RthJC
–
0.51
–
°C/W
RthJH
–
0.82
–
°C/W
Input Capacitance
Total Gate Charge
VCE = 20 V, VGE = 0 V, f = 10 kHz
VCE = 600 V, IC = 40 A, VGE = 15 V
Thermal Resistance − chip−to−case
Thermal Resistance −
chip−to−heatsink
Thermal grease, Thickness ≈ 100 mm,
λ = 2.87 W/mK
pF
BOOST DIODE CHARACTERISTICS
Diode Reverse Leakage Current
VR = 1200 V
IR
–
−
300
mA
Diode Forward Voltage
IF = 20 A, TJ = 25°C
VF
–
1.44
1.8
V
–
1.93
–
trr
–
15
–
ns
Qrr
–
108
–
nC
Peak Reverse Recovery Current
IRRM
–
11
–
A
Peak Rate of Fall of Recovery Current
di/dt
–
1500
–
A/ms
Err
–
20
–
mJ
trr
–
16
–
ns
Qrr
–
115
nC
Peak Reverse Recovery Current
IRRM
–
12
A
Peak Rate of Fall of Recovery Current
di/dt
–
1400
A/ms
Err
–
22
mJ
RthJC
–
0.83
°C/W
RthJH
–
1.15
IF = 20 A, TJ = 150°C
Reverse Recovery Time
Reverse Recovery Charge
TJ = 25°C
VCE = 700 V, IC = 50 A VGE = ±15 V,
RG = 4 W
Reverse Recovery Energy
Reverse Recovery Time
Reverse Recovery Charge
TJ = 125°C
VCE = 700 V, IC = 50 A VGE = ±15 V,
RG = 4 W
Reverse Recovery Energy
Thermal Resistance − chip−to−case
Thermal Resistance − chip−to−
heatsink
Thermal grease, Thickness ≈ 100 mm,
λ = 2.87 W/mK
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3
–
°C/W
NXH100B120H3Q0, NXH100B120H3Q0PG−R
ELECTRICAL CHARACTERISTICS TJ = 25°C Unless Otherwise Noted
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
BYPASS DIODE/IGBT PROTECTION DIODE CHARACTERISTICS
Diode Reverse Leakage Current
VR = 1600 V, TJ = 25°C
IR
–
−
100
mA
Diode Forward Voltage
IF = 25 A, TJ = 25°C
VF
–
1.0
1.4
V
−
0.90
−
RthJC
–
1.04
–
°C/W
RthJH
–
1.41
–
°C/W
R25
−
22
−
kW
R100
−
1486
−
W
Deviation of R25
DR/R
−5
−
5
%
Power dissipation
PD
−
200
−
mW
−
2
−
mW/K
IF = 25 A, TJ = 150°C
Thermal Resistance − chip−to−case
Thermal Resistance − chip−to−
heatsink
Thermal grease, Thickness ≈ 100 mm,
λ = 2.87 W/mK
THERMISTOR CHARACTERISTICS
Nominal resistance
Nominal resistance
T = 100°C
Power dissipation constant
B−value
B(25/50), tolerance ±3%
−
3950
−
K
B−value
B(25/100), tolerance ±3%
−
3998
−
K
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Orderable Part Number
Marking
Package
Shipping
NXH100B120H3Q0PG,
NXH100B120H3Q0PG−R
Q0BOOST − Case 180BF
(Pb−Free and Halide−Free)
Press−Fit Pins
24 Units / Blister Tray
NXH100B120H3Q0SG
Q0BOOST − Case 180AJ
(Pb−Free and Halide−Free)
Solder Pins
24 Units / Blister Tray
NXH100B120H3Q0PTG
NXH100B120H3Q0PTG
Q0BOOST − Case 180BF
(Pb−Free and Halide−Free)
Press−Fit Pins, Thermal Interface Material (TIM)
24 Units / Blister Tray
NXH100B120H3Q0STG
NXH100B120H3Q0STG
Q0BOOST − Case 180AJ
(Pb−Free and Halide−Free)
Solder Pins, Thermal Interface Material (TIM)
24 Units / Blister Tray
NXH100B120H3Q0PG,
NXH100B120H3Q0PG−R
NXH100B120H3Q0SG
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4
NXH100B120H3Q0, NXH100B120H3Q0PG−R
TYPICAL CHARACTERISTICS
Boost IGBT & IGBT Protection Diode / Bypass Diode
150
TJ= 25°C
TJ= 150°C
VGE= 20 V
120
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
150
VGE= 11 V
90
60
30
VGE= 11 V
90
60
30
0
0
0
1
2
3
5
4
0
VCE, COLLECTOR−EMITTER VOLTAGE (V)
1
2
3
4
5
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 2. IGBT Typical Output Characteristics
Figure 3. IGBT Typical Output Characteristics
80
150
70
120
90
IF, FORWARD CURRENT (A)
I C , C O L L ECT O R CU R R EN T ( A )
VGE= 20 V
120
150°C
60
30
60
50
40
30
150°C
20
25°C
10
25°C
0
0
0
2
4
6
8
10
12
0,0
VGE, GATE−EMITTER VOLTAGE (V)
0,5
1,0
VF, FORWARD VOLTAGE (V)
Figure 5. Diode Forward Characteristics
Figure 4. IGBT Typical Transfer Characteristics
Figure 7. RBSOA
Figure 6. FBSOA
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5
1,5
NXH100B120H3Q0, NXH100B120H3Q0PG−R
TYPICAL CHARACTERISTICS
Boost IGBT & IGBT Protection Diode / Bypass Diode
Figure 8. Typical Switching Loss Eon vs. IC
Figure 9. Typical Switching Loss Eon vs. RG
Figure 10. Typical Switching Loss Eoff vs. IC
Figure 11. Typical Switching Loss Eoff vs. RG
Figure 12. Typical Switching Time Tdon vs. IC
Figure 13. Typical Switching Time Tdon vs. RG
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6
NXH100B120H3Q0, NXH100B120H3Q0PG−R
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 14. Typical Switching Time Tdoff vs. IC
Figure 15. Typical Switching Time Tdoff vs. RG
Figure 16. Typical Switching Time Tron vs. IC
Figure 17. Typical Switching Time Tron vs. RG
Figure 19. Typical Switching Time Tf vs RG
Figure 18. Typical Switching Time Tf vs. IC
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NXH100B120H3Q0, NXH100B120H3Q0PG−R
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 20. Typical Reverse Recovery Energy vs. IC
Figure 21. Typical Reverse Recovery Energy vs. RG
Figure 22. Typical Reverse Recovery Time vs. IC
Figure 23. Typical Reverse Recovery Time vs. RG
Figure 24. Typical Reverse Recovery Charge vs. IC
Figure 25. Typical Reverse Recovery Charge vs. RG
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NXH100B120H3Q0, NXH100B120H3Q0PG−R
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 26. Typical Reverse Recovery Current
vs. IC
Figure 27. Typical Reverse Recovery Current
vs. RG
Figure 28. Typical di/dt vs. IC
16
VCE = 600 V
IC = 40 A
VGE = 15 V
14
VGE, Gate Voltage (V)
Figure 29. Typical di/dt vs.RG
12
10
8
6
4
2
0
0
100
200
300
400
Qg, Gate Charge (nC)
Figure 30. Gate Voltage vs. Gate Charge
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9
500
NXH100B120H3Q0, NXH100B120H3Q0PG−R
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 31. IGBT Junction−to−Case Transient Thermal Impedance
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10
NXH100B120H3Q0, NXH100B120H3Q0PG−R
TYPICAL PERFORMANCE CHARACTERISTICS − Boost Diode
Figure 32. Diode Junction−to−Case Transient Thermal Impedance
IF, FORWARD CURRENT (A)
60
150°C
50
25°C
40
30
20
10
0
0
1
2
3
4
5
VF, FORWARD VOLTAGE (V)
Figure 33. Diode Forward Characteristic
Figure 34. Diode Junction−to−Case Transient Thermal Impedance
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PIM22, 55x32.5 / Q0BOOST
CASE 180AJ
ISSUE B
DATE 08 NOV 2017
GENERIC
MARKING DIAGRAM*
XXXXXXXXXXXXXXXXG
ATYYWW
XXXXX = Specific Device Code
G
= Pb−Free Package
AT
= Assembly & Test Site Code
YYWW = Year and Work Week Code
*This information is generic. Please refer to device data
sheet for actual part marking. Pb−Free indicator, “G” or
microdot “ G”, may or may not be present. Some products
may not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
Electronic versionsON
are uncontrolled
MOUNTING FOOTPRINT
PAGE 2except when accessed directly from the Document Repository.
98AON63481G
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PIM22 55X32.5 / Q0BOOST (SOLDER PIN)
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
PIM22, 55x32.5 / Q0BOOST
CASE 180AJ
ISSUE B
DOCUMENT NUMBER:
DESCRIPTION:
98AON63481G
DATE 08 NOV 2017
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PIM22 55X32.5 / Q0BOOST (SOLDER PIN)
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PIM22 55x32.5 (PRESSFIT PIN)
CASE 180BF
ISSUE O
DOCUMENT NUMBER:
DESCRIPTION:
98AON07824H
DATE 21 MAY 2019
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PIM22 55x32.5 (PRESSFIT PIN)
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
PIM22 55x32.5 (PRESSFIT PIN)
CASE 180BF
ISSUE O
DATE 17 MAY 2019
GENERIC
MARKING DIAGRAM*
XXXXXXXXXXXXXXXXXG
ATYYWW
XXXXX = Specific Device Code
G
= Pb−Free Package
AT
= Assembly & Test Site Code
YYWW = Year and Work Week Code
DOCUMENT NUMBER:
DESCRIPTION:
98AON07824H
*This information is generic. Please refer to device data
sheet for actual part marking. Pb−Free indicator, “G” or
microdot “ G”, may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PIM22 55x32.5 (PRESSFIT PIN)
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
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