NXH040P120MNF1PG

DATA SHEET www.onsemi.com Silicon Carbide (SiC) Module – EliteSiC, 40 mohm SiC M1 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package NXH040P120MNF1PTG, NXH040P120MNF1PG PIM18 33.8x42.5 (PRESS FIT) CASE 180BW The NXH040P120MNF1 is a power module containing an 40 mW/1200 V SiC MOSFET half bridge and a thermistor in an F1 package. Features • 40 mW/1200 V SiC MOSFET Half Bridge • Thermistor • Options with Pre−applied Thermal Interface Material (TIM) and without Pre−applied TIM • Press−fit Pins Typical Applications • • • • MARKING DIAGRAM NXH040P120MNF1Pxx ATYYWW NXH040P120MNF1PTG NXH040P120MNF1PG AT YYWW = Specific Device Code = Specific Device Code = Assembly & Test Site Code = Year and Work Week Code PIN CONNECTIONS Solar Inverter Uninterruptible Power Supplies Electric Vehicle Charging Stations Industrial Power See Pin Function Description for pin names ORDERING INFORMATION See detailed ordering and shipping information on page 4 of this data sheet. Figure 1. NXH040P120MNF1 Schematic Diagram © Semiconductor Components Industries, LLC, 2021 September, 2023 − Rev. 0 1 Publication Order Number: NXH040P120MNF1/D NXH040P120MNF1PTG, NXH040P120MNF1PG PIN FUNCTION DESCRIPTION Pin Name Description 1 DC+ DC Positive Bus connection 2 DC+ DC Positive Bus connection 3 S1 Q1 Kelvin Emitter (High side switch) 4 G1 Q1 Gate (High side switch) 5 DC+ DC Positive Bus connection 6 DC+ DC Positive Bus connection 7 TH2 Thermistor Connection 2 8 TH1 Thermistor Connection 1 9 DC− DC Negative Bus connection 10 DC− DC Negative Bus connection 11 DC− DC Negative Bus connection 12 DC− DC Negative Bus connection 13 PHASE Center point of half bridge 14 PHASE Center point of half bridge 15 G2 Q2 Gate (Low side switch) 16 S2 Q2 Kelvin Emitter (High side switch) 17 PHASE Center point of half bridge 18 PHASE Center point of half bridge MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDSS 1200 V Gate−Source Voltage VGS +25/−15 V ID 30 A SiC MOSFET Continuous Drain Current @ TC = 80°C (TJ = 175°C) Pulsed Drain Current (TJ = 175°C) IDpulse 60 A Ptot 113 W Minimum Operating Junction Temperature TJMIN −40 °C Maximum Operating Junction Temperature TJMAX 175 °C Tstg −40 to 150 °C Vis 4800 VRMS 12.7 mm Maximum Power Dissipation @ TC = 80°C (TJ = 175°C) THERMAL PROPERTIES Storage Temperature Range INSULATION PROPERTIES Isolation Test Voltage, t = 1 s, 60 Hz Creepage Distance Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe Operating parameters. RECOMMENDED OPERATING RANGES Rating Module Operating Junction Temperature Symbol Min Max Unit TJ −40 150 °C Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. www.onsemi.com 2 NXH040P120MNF1PTG, NXH040P120MNF1PG ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Test Conditions Parameter Symbol Min Typ Max Unit V(BR)DSS 1200 − − V IDSS – – 100 mA mW SIC MOSFET CHARACTERISTICS Drain−Source Breakdown Voltage VGS = 0 V, ID = 200 mA Zero Gate Voltage Drain Current VGS = 0 V, VDS = 1200 V Drain−Source On Resistance VGS = 20 V, ID = 25 A, TJ = 25°C RDS(ON) VGS = 20 V, ID = 25 A, TJ = 125°C VGS = 20 V, ID = 25 A, TJ = 150°C – 42 56 – 55 – – 61 – VGS(TH) 1.8 2.81 4.3 V IGSS −250 – 250 nA RG − 2.2 − W CISS – 1505 – pF Reverse Transfer Capacitance CRSS – 12 – Output Capacitance COSS – 159 – Gate−Source Threshold Voltage VGS = VDS, ID = 10 mA Gate Leakage Current VGS = −10/20 V, VDS = 0 V Internal Gate Resistance Input Capacitance VDS = 800 V, VGS = 0 V, f = 1 MHz COSS Stored Energy VDS = 0 V to 800 V, VGS = 0 V Total Gate Charge VDS = 800 V, VGS = 20 V, ID = 25 A EOSS – 66 – mJ QG(TOTAL) – 122.1 – nC Gate−Source Charge QGS – 32.2 – nC Gate−Drain Charge QGD – 34.7 – nC td(on) – 43.3 – ns Turn−on Delay Time Rise Time Turn−off Delay Time TJ = 25°C VDS = 600 V, ID = 25 A VGS = −5 V/18 V, RG = TBD W Fall Time tr – 6.35 – td(off) – 97 – tf – 6.5 – Turn−on Switching Loss per Pulse EON – 0.13 – Turn off Switching Loss per Pulse EOFF – 0.05 – td(on) – 41.3 – tr – 5.9 – td(off) – 102 – tf – 5.5 – EON – 0.18 – EOFF – 0.05 – VSD – 3.97 6 Turn−on Delay Time Rise Time Turn−off Delay Time TJ = 150°C VDS = 6 V, ID = 25 A VGS = −5 V/18 V, RG = TBD W Fall Time Turn−on Switching Loss per Pulse Turn off Switching Loss per Pulse Diode Forward Voltage ID = 25 A, TJ = 25°C ID = 25 A, TJ = 150°C mJ ns mJ V – 3.44 – Thermal Resistance − Chip−to−case M1, M2 RthJC – 0.8356 – °C/W Thermal Resistance − Chip−to−heatsink RthJH – 1.291 – °C/W Thermal grease, Thickness = 2 Mil _2%, A = 2.8 W/mK THERMISTOR CHARACTERISTICS Nominal Resistance TNTC = 25°C R25 – 5 – kW Nominal Resistance TNTC = 100°C R100 – 493 – W Nominal Resistance TNTC = 150°C R150 – 159.5 – W Deviation of R100 TNTC = 100°C DR/R −5 – 5 % Power Dissipation − Recommended Limit 0.15 mA, non−self−heating effect PD – 0.1 – mW Power Dissipation Constant − Absolute Maximum 5 mA PD – 34.2 – mW – 1.4 – mW/K Power Dissipation Constant B−value B(25/50), tolerance ±2% – 3375 – K B−value B(25/100), tolerance ±2% – 3436 – K www.onsemi.com 3 NXH040P120MNF1PTG, NXH040P120MNF1PG ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Test Conditions Symbol Min Typ Max Unit THERMISTOR CHARACTERISTICS B−value B(25/50), tolerance ±3% – 3375 – K B−value B(25/100), tolerance ±3% – 3455 – K Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Orderable Part Number Marking Package Shipping NXH040P120MNF1PG NXH040P120MNF1PG F1−2PACK: Case 180BW Press−fit Pins (Pb−Free and Halide−Free) 28 Units / Blister Tray NXH040P120MNF1PTG NXH040P120MNF1PTG F1−2PACK: Case 180BW Press−fit Pins with pre−applied thermal interface material (TIM) (Pb−Free and Halide−Free) 28 Units / Blister Tray www.onsemi.com 4 NXH040P120MNF1PTG, NXH040P120MNF1PG TYPICAL CHARACTERISTICS SIC MOSFET (M1, M2) Figure 2. MOSFET Typical Output Characteristics Figure 3. MOSFET Typical Output Characteristics Figure 4. MOSFET Typical Output Characteristics Figure 5. MOSFET Typical Transfer Characteristics Figure 6. Body Diode Forward Characteristics Figure 7. Gate−to−Source Voltage vs. Total Charge www.onsemi.com 5 NXH040P120MNF1PTG, NXH040P120MNF1PG TYPICAL CHARACTERISTICS SIC MOSFET (M1, M2) Figure 8. Capacitance vs. Drain−to−Source Voltage www.onsemi.com 6 NXH040P120MNF1PTG, NXH040P120MNF1PG TYPICAL CHARACTERISTICS M1/M2 MOSFET SWITCHING CHARACTERISTICS Figure 9. Typical Switching Loss Eon vs. ID Figure 10. Typical Switching Loss Eon vs. RG Figure 11. Typical Switching Loss Eoff vs. ID Figure 12. Typical Switching Loss Eoff vs. RG Figure 13. Typical Turn−On Switching Tdon vs. ID Figure 14. Typical Turn−On Switching Tdon vs. RG www.onsemi.com 7 NXH040P120MNF1PTG, NXH040P120MNF1PG TYPICAL CHARACTERISTICS M1/M2 MOSFET SWITCHING CHARACTERISTICS Figure 15. Typical Turn−Off Switching Tdoff vs. ID Figure 16. Typical Turn−Off Switching Tdoff vs. RG Figure 17. Typical Turn−On Switching Tr vs. ID Figure 18. Typical Turn−On Switching Tr vs. RG Figure 19. Typical Turn−Off Switching Tf vs. ID Figure 20. Typical Turn−Off Switching Tf vs. RG www.onsemi.com 8 NXH040P120MNF1PTG, NXH040P120MNF1PG TYPICAL CHARACTERISTICS M1/M2 MOSFET SWITCHING CHARACTERISTICS Figure 21. di/dt ON vs. ID Figure 22. di/dt ON vs. RG Figure 23. di/dt OFF vs. ID Figure 24. di/dt OFF vs. RG Figure 25. dv/dt ON vs. ID Figure 26. dv/dt ON vs. RG www.onsemi.com 9 NXH040P120MNF1PTG, NXH040P120MNF1PG TYPICAL CHARACTERISTICS M1/M2 MOSFET SWITCHING CHARACTERISTICS Figure 27. dv/dt OFF vs. ID Figure 28. dv/dt OFF vs. RG www.onsemi.com 10 NXH040P120MNF1PTG, NXH040P120MNF1PG TYPICAL CHARACTERISTICS SIC MOSFET (M1, M2) Figure 29. SiC MOSFET Junction−to−Case Transient Thermal Impedance Table 1. FOSTER NETWORKS − M1, M2 M1 M2 Foster Element # Rth (K/W) Cth (Ws/K) Rth (K/W) Cth (Ws/K) 1 0.051996 0.002404 0.054881 0.002284 2 0.046504 0.020373 0.010554 0.082427 3 0.008903 0.221087 0.064895 0.028973 4 0.165341 0.039489 0.094862 0.058574 5 0.600991 0.065660 0.610507 0.052914 Table 2. CAUER NETWORKS − M1, M2 M1 M2 Cauer Element # Rth (K/W) Cth (Ws/K) Rth (K/W) Cth (Ws/K) 1 0.076857 0.001961 0.076754 0.001921 2 0.141063 0.010485 0.182594 0.011596 3 0.274014 0.018050 0.136313 0.018196 4 0.113973 0.038620 0.215815 0.019717 5 0.267827 0.046224 0.224225 0.049799 www.onsemi.com 11 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PIM18 33.8x42.5 (PRESS FIT) CASE 180BW ISSUE B DATE 30 APR 2021 GENERIC MARKING DIAGRAM* XXXXXXXXXXXXXXXXXXXXXX ATYYWW XXXXX = Specific Device Code AT = Assembly & Test Site Code YYWW = Year and Work Week Code DOCUMENT NUMBER: DESCRIPTION: 98AON19723H *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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