DATA SHEET
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Silicon Carbide (SiC)
Module – EliteSiC, 10 mohm
SiC M2 MOSFET, 900 V,
2-PACK Half Bridge
Topology, F1 Package
NXH010P90MNF1PTG,
NXH010P90MNF1PG
PIM18 33.8x42.5 (PRESS FIT)
CASE 180BW
The NXH010P120MNF1 is a power module containing an
10 mW/900 V SiC MOSFET half bridge and a thermistor in an F1
package.
Features
• 10 mW/900 V SiC MOSFET Half Bridge
• Thermistor
• Options with Pre−applied Thermal Interface Material (TIM) and
without Pre−applied TIM
• Press−fit Pins
Typical Applications
•
•
•
•
MARKING DIAGRAM
NXH010P90MNF1Pxx
ATYYWW
NXH010P90MNF1PTG = Specific Device Code
NXH010P90MNF1PG = Specific Device Code
AT
= Assembly & Test Site Code
YYWW
= Year and Work Week Code
PIN CONNECTIONS
Solar Inverter
Uninterruptible Power Supplies
Electric Vehicle Charging Stations
Industrial Power
See Pin Function Description for pin names
ORDERING INFORMATION
See detailed ordering and shipping information on
page 4 of this data sheet.
Figure 1. NXH010P90MNF1 Schematic Diagram
© Semiconductor Components Industries, LLC, 2019
September, 2023 − Rev. 0
1
Publication Order Number:
NXH010P90MNF1/D
NXH010P90MNF1PTG, NXH010P90MNF1PG
PIN FUNCTION DESCRIPTION
Pin
Name
Description
1
DC+
DC Positive Bus connection
2
DC+
DC Positive Bus connection
3
S1
Q1 Kelvin Emitter (High side switch)
4
G1
Q1 Gate (High side switch)
5
DC+
DC Positive Bus connection
6
DC+
DC Positive Bus connection
7
TH2
Thermistor Connection 2
8
TH1
Thermistor Connection 1
9
DC−
DC Negative Bus connection
10
DC−
DC Negative Bus connection
11
DC−
DC Negative Bus connection
12
DC−
DC Negative Bus connection
13
PHASE
Center point of half bridge
14
PHASE
Center point of half bridge
15
G2
Q2 Gate (Low side switch)
16
S2
Q2 Kelvin Emitter (High side switch)
17
PHASE
Center point of half bridge
18
PHASE
Center point of half bridge
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain−Source Voltage
VDSS
900
V
Gate−Source Voltage
VGS
+18/−8
V
ID
154
A
IDpulse
308
A
Ptot
328
W
Minimum Operating Junction Temperature
TJMIN
−40
°C
Maximum Operating Junction Temperature
TJMAX
175
°C
Tstg
−40 to 150
°C
Vis
4800
VRMS
12.7
mm
SiC MOSFET
Continuous Drain Current @ TC = 80°C (TJ = 175°C)
Pulsed Drain Current (TJ = 175°C)
Maximum Power Dissipation @ TC = 80°C (TJ = 175°C)
THERMAL PROPERTIES
Storage Temperature range
INSULATION PROPERTIES
Isolation test voltage, t = 1 s, 60 Hz
Creepage distance
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
RECOMMENDED OPERATING RANGES
Rating
Module Operating Junction Temperature
Symbol
Min
Max
Unit
TJ
−40
150
°C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
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NXH010P90MNF1PTG, NXH010P90MNF1PG
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Test Conditions
Parameter
Symbol
Min
Typ
Max
Unit
V(BR)DSS
900
−
−
V
IDSS
–
–
200
mA
mW
SIC MOSFET CHARACTERISTICS
Drain−Source Breakdown Voltage
VGS = 0 V, ID = 400 mA
Zero Gate Voltage Drain Current
VGS = 0 V, VDS = 900 V
Drain−Source On Resistance
VGS = 15 V, ID = 100 A, TJ = 25°C
RDS(ON)
VGS = 15 V, ID = 100 A, TJ = 125°C
VGS = 15 V, ID = 100 A, TJ = 150°C
Gate−Source Threshold Voltage
VGS = VDS, ID = 40 mA
Gate Leakage Current
VGS = −5/15 V, VDS = 0 V
Internal Gate Resistance
Input Capacitance
–
10.03
14
–
10.08
–
–
11.61
–
VGS(TH)
1.8
2.74
4.3
V
IGSS
−500
–
500
nA
RG
VDS = 450 V, VGS = 0 V, f = 1 MHz
0.8
CISS
–
Reverse Transfer Capacitance
CRSS
Output Capacitance
COSS
W
7007
–
–
44
–
–
665
–
pF
COSS Stored Energy
VDS = 0 V to 800 V, VGS = 0 V
EOSS
–
251
–
mJ
Total Gate Charge
VDS = 720 V, VGS = −15/15 V,
ID = 100 A
QG(TOTAL)
–
546.4
–
nC
Gate−Source Charge
Gate−Drain Charge
Turn−on Delay Time
Rise Time
TJ = 25°C
VDS = 600 V, ID = 100 A
VGS = −5 V/18 V, RG = 1.5 W
Turn−off Delay Time
Fall Time
QGS
–
105.45
–
nC
QGD
–
122.7
–
nC
td(on)
–
53
–
ns
tr
–
16
–
td(off)
–
150
–
tf
–
12
–
Turn−on Switching Loss per Pulse
EON
–
1.13
–
Turn off Switching Loss per Pulse
EOFF
–
0.65
–
td(on)
–
50.4
–
tr
–
15.5
–
td(off)
–
165
–
tf
–
13
–
EON
–
1.24
–
EOFF
–
0.67
–
VSD
–
4.47
6
Turn−on Delay Time
Rise Time
TJ = 150°C
VDS = 600 V, ID = 100 A
VGS = −5 V/18 V , RG = 1.5 W
Turn−off Delay Time
Fall Time
Turn−on Switching Loss per Pulse
Turn off Switching Loss per Pulse
Diode Forward Voltage
ID = 100 A, TJ = 25°C
ID = 100 A, TJ = 150°C
mJ
ns
mJ
V
–
3.92
–
Thermal Resistance − Chip−to−Case
M1, M2
RthJC
–
0.29
–
°C/W
Thermal Resistance − Chip−to−Heatsink
Thermal grease, Thickness = 2 Mil _2%,
A = 2.8 W/mK
RthJH
–
0.46
–
°C/W
THERMISTOR CHARACTERISTICS
Nominal Resistance
TNTC = 25°C
R25
–
5
–
kW
Nominal Resistance
TNTC = 100°C
R100
–
493
–
W
Nominal Resistance
TNTC = 150°C
R150
–
159.5
–
W
Deviation of R100
TNTC = 100°C
DR/R
−5
–
5
%
Power Dissipation – Recommended Limit
0.15 mA, non−self−heating effect
PD
–
0.1
–
mW
Power Dissipation – Absolute Maximum
5 mA
PD
–
34.2
–
mW
Power Dissipation Constant
–
1.4
–
mW/K
B−value
B(25/50), tolerance ±2%
–
3375
–
K
B−value
B(25/100), tolerance ±2%
–
3436
–
K
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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NXH010P90MNF1PTG, NXH010P90MNF1PG
ORDERING INFORMATION
Orderable Part Number
Marking
Package
Shipping
NXH010P90MNF1PG
NXH010P90MNF1PG
F1−2PACK: Case 180BW
Press−fit Pins
(Pb*Free and Halide*Free)
28 Units / Blister Tray
NXH010P90MNF1PTG
NXH010P90MNF1PTG
F1−2PACK: Case 180BW
Press−fit Pins with pre*applied
thermal interface material (TIM)
(Pb*Free and Halide*Free)
28 Units / Blister Tray
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NXH010P90MNF1PTG, NXH010P90MNF1PG
TYPICAL CHARACTERISTICS
SIC MOSFET (M1/M2)
Figure 2. MOSFET Typical Output
Characteristics
Figure 3. MOSFET Typical Output
Characteristics
Figure 4. MOSFET Typical Output
Characteristics
Figure 5. MOSFET Typical Transfer
Characteristics
Figure 6. Body Diode Forward Characteristics
Figure 7. Gate−to−Source Voltage vs. Total
Charge
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NXH010P90MNF1PTG, NXH010P90MNF1PG
TYPICAL CHARACTERISTICS
SIC MOSFET (M1/M2)
Figure 8. Capacitance vs. Drain−to−Source Voltage
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NXH010P90MNF1PTG, NXH010P90MNF1PG
TYPICAL CHARACTERISTICS
M1/M2 MOSFET SWITCHING CHARACTERISTICS
Figure 9. Typical Switching Loss Eon vs. ID
Figure 10. Typical Switching Loss Eon vs. RG
Figure 11. Typical Switching Loss Eoff vs. ID
Figure 12. Typical Switching Loss Eoff vs. RG
Figure 13. Typical Turn−On Switching Td(on) vs. ID
Figure 14. Typical Turn−On Switching Td(on) vs. RG
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NXH010P90MNF1PTG, NXH010P90MNF1PG
TYPICAL CHARACTERISTICS
M1/M2 MOSFET SWITCHING CHARACTERISTICS
Figure 15. Typical Turn−off Switching Td(off) vs. ID
Figure 16. Typical Turn−off Switching Td(off) vs. RG
Figure 17. Typical Turn−On Switching Tr vs. ID
Figure 18. Typical Turn−On Switching Tr vs. RG
Figure 19. Typical Turn−Off Switching Tf vs. ID
Figure 20. Typical Turn−Off Switching Tf vs. RG
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NXH010P90MNF1PTG, NXH010P90MNF1PG
TYPICAL CHARACTERISTICS
M1/M2 MOSFET SWITCHING CHARACTERISTICS
Figure 21. di/dt ON vs ID
Figure 22. di/dt ON vs. RG
Figure 23. di/dt OFF vs ID
Figure 24. di/dt OFF vs. RG
Figure 25. dv/dt ON vs ID
Figure 26. dv/dt ON vs. RG
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NXH010P90MNF1PTG, NXH010P90MNF1PG
TYPICAL CHARACTERISTICS
M1/M2 MOSFET SWITCHING CHARACTERISTICS
Figure 27. dv/dt OFF vs ID
Figure 28. dv/dt OFF vs. RG
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NXH010P90MNF1PTG, NXH010P90MNF1PG
TYPICAL CHARACTERISTICS
SIC MOSFET (M1/M2)
Figure 29. SiC MOSFET Junction−to−Case Transient Thermal Impedance
Table 1. FOSTER NETWORKS − M1, M2
M1
M2
Foster
Element #
Rth (K/W)
Cth (Ws/K)
Rth (K/W)
Cth (Ws/K)
1
0.018018
0.006761
0.017423
0.006288
2
0.00725
0.110732
0.008856
0.083472
3
0.007012
0.219934
0.007085
0.218085
4
0.034121
0.121787
0.035241
0.119517
5
0.227927
0.132429
0.233897
0.129036
Table 2. CAUER NETWORKS – M1, M2
M1
M2
Cauer
Element #
Rth (K/W)
Cth (Ws/K)
Rth (K/W)
Cth (Ws/K)
1
0.025529
0.005642
0.026977
0.005357
2
0.050904
0.03348
0.070046
0.034112
3
0.066724
0.042125
0.094049
0.071939
4
0.058571
0.063408
0.040991
0.068148
5
0.092598
0.079724
0.064984
0.039596
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PIM18 33.8x42.5 (PRESS FIT)
CASE 180BW
ISSUE B
DATE 30 APR 2021
GENERIC
MARKING DIAGRAM*
XXXXXXXXXXXXXXXXXXXXXX
ATYYWW
XXXXX = Specific Device Code
AT
= Assembly & Test Site Code
YYWW = Year and Work Week Code
DOCUMENT NUMBER:
DESCRIPTION:
98AON19723H
*This information is generic. Please refer to device data
sheet for actual part marking. Pb−Free indicator, “G” or
microdot “ G”, may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PIM18 33.8x42.5 (PRESS FIT)
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