NXH010P120MNF1PG

DATA SHEET www.onsemi.com Silicon Carbide (SiC) Module – EliteSiC, 10 mohm SiC M1 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package NXH010P120MNF1PTNG, NXH010P120MNF1PNG, NXH010P120MNF1PTG, NXH010P120MNF1PG PIM18 33.8x42.5 (PRESS FIT) CASE 180BW MARKING DIAGRAM NXH010P120MNF1z ATYYWW General Description The NXH010P120MNF1 is a power module containing an 10 mW/1200 V SiC MOSFET half bridge and a thermistor in an F1 package. Features • 10 mW/1200 V SiC MOSFET Half Bridge • Thermistor • Options With Pre−Applied Thermal Interface Material (TIM) and • Without Pre−Applied TIM Press−Fit Pins NXH010P120MNF1z = Specific Device Code z = PTNG/PNG/PTG/PG AT = Assembly & Test Site Code YYWW = Year and Work Week Code ORDERING INFORMATION See detailed ordering and shipping information on page 4 of this data sheet. Typical Applications • • • • Solar Inverter Uninterruptible Power Supplies Electric Vehicle Charging Stations Industrial Power Figure 1. NXH010P120MNF1 Schematic Diagram © Semiconductor Components Industries, LLC, 2021 September, 2023 − Rev. 0 1 Publication Order Number: NXH010P120MNF1/D NXH010P120MNF1PTNG, NXH010P120MNF1PNG, NXH010P120MNF1PTG, NXH010P120MNF1PG PIN CONNECTIONS Figure 2. Pin Connections PIN FUNCTION DESCRIPTION Pin Name Description 8 TH1 Thermistor Connection 1 7 TH2 Thermistor Connection 2 1 DC+ DC Positive Bus connection DC Positive Bus connection 2 DC+ 13 PHASE Center point of half bridge 14 PHASE Center point of half bridge 9 DC− 3 S1 Q1 Kelvin Emitter (High side switch) Q1 Gate (High side switch) DC Negative Bus connection 4 G1 10 DC− 15 G2 Q2 Gate (Low side switch) 16 S2 Q2 Kelvin Emitter (High side switch) 11 DC− DC Negative Bus connection 12 DC− DC Negative Bus connection 5 DC+ DC Positive Bus connection DC Positive Bus connection DC Negative Bus connection 6 DC+ 17 PHASE Center point of half bridge 18 PHASE Center point of half bridge www.onsemi.com 2 NXH010P120MNF1PTNG, NXH010P120MNF1PNG, NXH010P120MNF1PTG, NXH010P120MNF1PG Table 1. ABSOLUTE MAXIMUM RATINGS (Note 1) Symbol Value Unit Drain−Source Voltage VDSS 1200 V Gate−Source Voltage VGS +25/−15 V ID 114 A IDpulse 228 A Rating SIC MOSFET Continuous Drain Current @ Tc = 80°C (TJ = 175°C) Pulsed Drain Current (TJ = 175°C) Maximum Power Dissipation @ Tc = 80°C (TJ = 175°C) Ptot 413 W Minimum Operating Junction Temperature TJMIN −40 °C Maximum Operating Junction Temperature TJMAX 175 °C Tstg −40 to 150 °C Vis 4800 VRMS 12.7 mm THERMAL PROPERTIES Storage Temperature range INSULATION PROPERTIES Isolation Test Voltage, t = 1 sec, 60 Hz Creepage Distance Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe Operating parameters. RECOMMENDED OPERATING RANGES Rating Symbol Min Max Unit TJ −40 150 °C Module Operating Junction Temperature Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. ELECTRICAL CHARACTERISTICS TJ = 25°C unless otherwise noted Parameter Test Conditions Symbol Min Typ Max Unit V(BR)DSS 1200 – – V IDSS – – 200 mA RDS(ON) – 10.5 14 mW VGS = 20 V, ID = 100 A, TJ = 125°C – 14.1 – VGS = 20 V, ID = 100 A, TJ = 150°C – 14.5 – VGS(TH) 1.8 2.90 4.3 V IGSS −500 – 500 nA RG − 0.8 − W pF SiC MOSFET CHARACTERISTICS Drain−Source Breakdown Voltage VGS = 0 V, ID = 400 mA Zero Gate Voltage Drain Current VGS = 0 V, VDS = 1200 V Drain−Source On Resistance VGS = 20 V, ID = 100 A, TJ = 25°C Gate−Source Threshold Voltage VGS = VDS, ID =40 mA Gate Leakage Current VGS = −10/20 V, VDS = 0 V Internal Gate Resistance Input Capacitance Reverse Transfer Capacitance VDS = 800 V, VGS = 0 V. f = 1 MHz Output Capacitance COSS Stored Energy VDS = 0 V to 800 V, VGS = 0 V Total Gate Charge VDS = 800 V. VGS = 20 V. ID = 100 A Gate−Source Charge Gate−Drain Charge www.onsemi.com 3 CISS – 4707 – CRSS – 39 – COSS – 548 – EOSS – 221 – mJ QG(TOTAL) – 454 – nC QGS – 129 – nC QGD – 131 – nC NXH010P120MNF1PTNG, NXH010P120MNF1PNG, NXH010P120MNF1PTG, NXH010P120MNF1PG ELECTRICAL CHARACTERISTICS (continued) TJ = 25°C unless otherwise noted Parameter Test Conditions Symbol Min Typ Max Unit td(on) tr – 36 – ns – 16.2 – td(off) – 135.2 – tf – 13 – EON – 1.47 – EOFF – 0.33 – td(on) – 30.5 – tr – 15.2 – td(off) – 149 – tf – 15 – EON – 1.77 – EOFF – 0.41 – VSD – 3.94 6 – 3.42 – SiC MOSFET CHARACTERISTICS Turn−on Delay Time TJ = 25°C VDS = 600 V, ID = 100 A VGS = −5 V/18 V, RG = 2 W Rise Time Turn−off Delay Time Fall Time Turn−on Switching Loss per Pulse Turn off Switching Loss per Pulse Turn−on Delay Time TJ = 150°C VDS = 600 V, ID = 100 A VGS = −5 V/18 V, RG = 2 W Rise Time Turn−off Delay Time Fall Time Turn−on Switching Loss per Pulse Turn off Switching Loss per Pulse ID = 100 A, TJ = 25°C Diode Forward Voltage ID = 100 A, TJ = 150°C mJ ns mJ V Thermal Resistance − Chip−to−case M1, M2 RthJC – 0.23 – °C/W Thermal Resistance − Chip−to−heatsink Thermal Resistance − chip−to− heatsink, Thermal grease, Thickness = 2 Mil _2%, A = 2.8 W/mK RthJH – 0.38 – °C/W THERMISTOR CHARACTERISTICS Nominal Resistance TNTC = 25°C R25 – 5 – kW Nominal Resistance TNTC = 100°C R100 – 493 – W Nominal Resistance TNTC = 150°C R150 – 159.5 – W Deviation of R100 TNTC = 100°C DR/R −5 – 5 % Power Dissipation − recommended limit 0.15 mA, non−self−heating effect PD – 0.1 – mW Power Dissipation − absolute maximum 5 mA PD – 34.2 – mW – 1.4 – mW/K Power Dissipation Constant B−value B(25/50), tolerance ±2% – 3375 – K B−value B(25/100), tolerance ±2% – 3436 – K Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Orderable Part Number Specific Device Marking Package Type Shipping† NXH010P120MNF1PNG NXH010P120MNF1PNG F1−2PACK: Case 180BW Press−fit Pins, Ni−Plated DBC (Pb−Free and Halide−Free) 28 Units / Blister Tray NXH010P120MNF1PTNG NXH010P120MNF1PTNG F1−2PACK: Case 180BW Press−fit Pins, Ni−Plated DBC with pre−applied thermal interface material (TIM) (Pb−Free and Halide−Free) 28 Units / Blister Tray NXH010P120MNF1PG NXH010P120MNF1PG F1−2PACK: Case 180BW Press−fit Pins, Copper DBC (Pb−Free and Halide−Free) 28 Units / Blister Tray NXH010P120MNF1PTG NXH010P120MNF1PTG F1−2PACK: Case 180BW Press−fit Pins, Copper DBC with pre−applied thermal interface material (TIM) (Pb−Free and Halide−Free) 28 Units / Blister Tray †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 4 NXH010P120MNF1PTNG, NXH010P120MNF1PNG, NXH010P120MNF1PTG, NXH010P120MNF1PG Figure 3. MOSFET Typical Output Characteristics Figure 4. MOSFET Typical Output Characteristics Figure 5. MOSFET Typical Output Characteristics Figure 6. MOSFET Typical Transfer Characteristics Figure 7. Body Diode Forward Characteristic Figure 8. Gate−to−Source Voltage vs. Total Charge www.onsemi.com 5 NXH010P120MNF1PTNG, NXH010P120MNF1PNG, NXH010P120MNF1PTG, NXH010P120MNF1PG TYPICAL CHARACTERISTICS CAPACITANCE (pF) SIC MOSFET (M1, M2) VDS, DRAIN TO SOURCE VOLTAGE (V) DUTY CYCLE PEAK RESPONSE [5C/W] Figure 9. Capacitance vs. Drain−to−Source Voltage PULSE ON TIME [s] Figure 10. SiC Mosfet Junction− to−Case Transient Thermal Impedance M1 Element # M2 Rth (K/W) Cth (Ws/K) Rth (K/W) Cth (Ws/K) 1 0.00569 0.00195 0.01290 0.00461 2 0.01079 0.00951 0.02387 0.02538 3 0.03005 0.01813 0.04253 0.02953 4 0.08398 0.08121 0.07199 0.08994 5 0.09325 0.11117 0.07823 0.06854 Figure 11. Table of Cauer Networks−M1, M2 www.onsemi.com 6 NXH010P120MNF1PTNG, NXH010P120MNF1PNG, NXH010P120MNF1PTG, NXH010P120MNF1PG TYPICAL CHARACTERISTICS M1/M2 MOSFET SWITCHING CHARACTERISTICS Figure 13. Typical Switching Loss EON vs. RG Figure 12. Typical Switching Loss EON vs. ID Figure 14. Typical Switching Loss EOff vs. ID Figure 15. Typical Switching Loss EOff vs. RG Figure 16. Typical Turn−On Switching Tdon vs. ID Figure 17. Typical Turn−On Switching Tdon vs. RG www.onsemi.com 7 NXH010P120MNF1PTNG, NXH010P120MNF1PNG, NXH010P120MNF1PTG, NXH010P120MNF1PG TYPICAL CHARACTERISTICS M1/M2 MOSFET SWITCHING CHARACTERISTICS Figure 18. Typical Turn−Off Switching Tdoff vs. ID Figure 19. Typical Turn−Off Switching Tdoff vs. RG Figure 20. Typical Turn−On Switching Tr vs. ID Figure 21. Typical Turn−On Switching Tr vs. RG Figure 22. Typical Turn−Off Switching Tf vs. ID Figure 23. Typical Turn−Off Switching Tf vs. RG www.onsemi.com 8 NXH010P120MNF1PTNG, NXH010P120MNF1PNG, NXH010P120MNF1PTG, NXH010P120MNF1PG TYPICAL CHARACTERISTICS M1/M2 MOSFET SWITCHING CHARACTERISTICS Figure 24. di/dt ON vs. ID Figure 25. di/dt ON vs. RG Figure 26. di/dt OFF vs. ID Figure 27. di/dt OFF vs. RG Figure 28. dv/dt ON vs. ID Figure 29. dv/dt ON vs. RG www.onsemi.com 9 NXH010P120MNF1PTNG, NXH010P120MNF1PNG, NXH010P120MNF1PTG, NXH010P120MNF1PG TYPICAL CHARACTERISTICS M1/M2 MOSFET SWITCHING CHARACTERISTICS Figure 31. dv/dt OFF vs. RG Figure 30. dv/dt OFF vs ID www.onsemi.com 10 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PIM18 33.8x42.5 (PRESS FIT) CASE 180BW ISSUE B DATE 30 APR 2021 GENERIC MARKING DIAGRAM* XXXXXXXXXXXXXXXXXXXXXX ATYYWW XXXXX = Specific Device Code AT = Assembly & Test Site Code YYWW = Year and Work Week Code DOCUMENT NUMBER: DESCRIPTION: 98AON19723H *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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