NXH25T120L2Q1PG
Q1 3-Phase TNPC Module
The NXH25T120L2Q1PG/PTG is a case power module containing
a three channel T−type neutral−point clamped (TNPC) circuit. Each
channel has a two 1200 V, 25 A IGBTs with inverse diodes and two
650 V, 20 A IGBTs with inverse diodes. The module contains an NTC
thermistor.
www.onsemi.com
Features
•
•
•
•
•
Low Package Height
Compact 82.5 mm x 37.4 mm x 12 mm Package
Press−fit Pins
Options with Pre−applied Thermal Interface Material (TIM) and
Without Pre−applied TIM
Thermistor
Typical Applications
• Solar Inverters
• UPS
Q1 3−TNPC
PRESS FIT
CASE 180AS
12, 13
DC+
DC+
1
T1
D3
GND
2, 4
5 E3
T3
3 G3
30 G2
T2
T5
D1
43 G1
44 E1
37 E5
36 E9
DEVICE MARKING
NXH25T120L2Q1PG
ATYYWW
OUT1
41, 42
23 G6
D2
D7
24 E6
OUT2
39, 40
T6
T7
9 E7
D11
T1
31
T4
27 E4
T8
D4
26 G8
25 E8
17 E11
D8
OUT3
33, 34
T10
T11
28 G4
NXH25T120L2Q1PTG
ATYYWW
22 G10 21 E10
D6
11 G7
14, 16
32
T2
D9
35 G9
29 E2
GND
8, 10
GND
T9
D5
38 G5
D10
15 G11
T12
D12
20 G12
19 E12
6, 7
DC −
DC −
18
Figure 1. NXH25T120L2Q1PG/PTG Schematic Diagram
NXH25T120L2Q1P or
NXH25T120L2Q1PT
= Specific Device Code
G
= Pb−Free Package
AT
= Assembly & Test Site Code
YYWW = Year and Work Week Code
PIN ASSIGNMENTS
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
© Semiconductor Components Industries, LLC, 2018
October, 2018 − Rev. 0
1
Publication Order Number:
NXH25T120L2Q1PG/D
NXH25T120L2Q1PG
Table 1. MAXIMUM RATINGS (Note 1)
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCES
1200
V
Gate−Emitter Voltage
VGE
±20
V
IC
25
A
ICpulse
75
A
Maximum Power Dissipation (TJ = 175°C)
Ptot
81
W
Short Circuit Withstand Time @ VGE = 15 V, VCE = 600 V, TJ v 150°C
Tsc
5
ms
Minimum Operating Junction Temperature
TJMIN
−40
°C
Maximum Operating Junction Temperature
TJMAX
150
°C
Collector−Emitter Voltage
VCES
650
V
Gate−Emitter Voltage
VGE
±20
V
HALF BRIDGE IGBT
Continuous Collector Current @ Tc = 80°C (TJ = 175°C)
Pulsed Collector Current (TJ = 175°C)
NEUTRAL POINT IGBT
Continuous Collector Current @ Tc = 80°C (TJ = 175°C)
Pulsed Collector Current (TJ = 175°C)
Maximum Power Dissipation (TJ = 175°C)
Short Circuit Withstand Time @ VGE = 15 V, VCE = 400 V, TJ v 150°C
IC
20
A
ICpulse
60
A
Ptot
50
W
Tsc
5
ms
Minimum Operating Junction Temperature
TJMIN
−40
°C
Maximum Operating Junction Temperature
TJMAX
150
°C
VRRM
1200
V
IF
15
A
IFRM
45
A
HALF BRIDGE DIODE
Peak Repetitive Reverse Voltage
Continuous Forward Current @ Tc = 80°C (TJ = 175°C)
Repetitive Peak Forward Current (TJ = 175°C)
Maximum Power Dissipation (TJ = 175°C)
Ptot
43
W
Minimum Operating Junction Temperature
TJMIN
−40
°C
Maximum Operating Junction Temperature
TJMAX
150
°C
VRRM
650
V
IF
15
A
IFRM
45
A
NEUTRAL POINT DIODE
Peak Repetitive Reverse Voltage
Continuous Forward Current @ Tc = 80°C (TJ = 175°C)
Repetitive Peak Forward Current (TJ = 175°C)
Maximum Power Dissipation (TJ = 175°C)
Ptot
39
W
Minimum Operating Junction Temperature
TJMIN
−40
°C
Maximum Operating Junction Temperature
TJMAX
150
°C
Tstg
−40 to 125
°C
Vis
3000
VRMS
12.7
mm
THERMAL PROPERTIES
Storage Temperature range
INSULATION PROPERTIES
Isolation test voltage, t = 1 sec, 60Hz
Creepage distance
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
Table 2. RECOMMENDED OPERATING RANGES
Rating
Symbol
Min
Max
Unit
TJ
−40
150
°C
Module Operating Junction Temperature
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
www.onsemi.com
2
NXH25T120L2Q1PG
Table 3. ELECTRICAL CHARACTERISTICS TJ = 25°C unless otherwise noted
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
VGE = 0 V, VCE = 1200 V
ICES
–
–
300
mA
VGE = 15 V, IC = 25 A, TJ = 25°C
VCE(sat)
–
1.90
2.50
V
HALF BRIDGE IGBT CHARACTERISTICS
Collector−Emitter Cutoff Current
Collector−Emitter Saturation Voltage
–
1.96
–
Gate−Emitter Threshold Voltage
VGE = 15 V, IC = 25 A, TJ = 125°C
VGE = VCE, IC = 1.5 mA
VGE(TH)
4.90
5.49
6.50
V
Gate Leakage Current
VGE = 20 V, VCE = 0 V
IGES
–
–
300
nA
TJ = 25°C
VCE = 350 V, IC = 15 A
VGE = ±15 V, RG = 15 W
td(on)
–
59
–
ns
tr
–
26
–
td(off)
–
242
–
Turn−on Delay Time
Rise Time
Turn−off Delay Time
Fall Time
tf
–
52
–
Turn−on Switching Loss per Pulse
Eon
–
220
–
Turn off Switching Loss per Pulse
Eoff
–
240
–
td(on)
–
48
–
tr
–
29
–
td(off)
–
293
–
TJ = 125°C
VCE = 350 V, IC = 15 A
VGE = ±15 V, RG = 15 W
Turn−on Delay Time
Rise Time
Turn−off Delay Time
Fall Time
mJ
ns
tf
–
258
–
Turn−on Switching Loss per Pulse
Eon
–
400
–
Turn off Switching Loss per Pulse
Eoff
–
710
–
Cies
–
8502
–
Output Capacitance
Coes
–
187
–
Reverse Transfer Capacitance
Cres
–
154
–
VCE = 600 V, IC = 25 A, VGE = ±15 V
Qg
–
352
–
nC
Thermal grease, Thickness ≤ 2.25 Mil,
l = 2.9 W/mK
RthJH
–
1.17
–
°C/W
VF
–
2.43
−
V
–
1.60
−
VCE = 20 V, VGE = 0 V. f = 10 kHz
Input Capacitance
Total Gate Charge
Thermal Resistance − chip−to−heatsink
mJ
pF
NEUTRAL POINT DIODE CHARACTERISTICS
Diode Forward Voltage
IF = 15 A, TJ = 25°C
IF = 15 A, TJ = 125°C
Combined IGBT + Diode Voltage Drop
Reverse Recovery Time
Reverse Recovery Charge
Peak Reverse Recovery Current
IF = 15 A, TJ = 25°C
VDT
–
3.76
4.60
V
TJ = 25°C
VCE = 350 V, IC = 15 A
VGE = ±15 V, RG = 15 W
trr
–
59
–
ns
Qrr
–
0.21
–
mC
IRRM
–
7
–
A
di/dt
–
106
–
A/ms
Err
–
40
–
mJ
trr
–
67
–
ns
Qrr
–
0.69
–
mC
IRRM
–
19
–
A
di/dt
–
451
–
A/ms
Err
–
100
–
mJ
RthJH
–
2.45
–
°C/W
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
Reverse Recovery Time
Reverse Recovery Charge
Peak Reverse Recovery Current
TJ = 125°C
VCE = 350 V, IC = 15 A
VGE = ±15 V, RG = 15 W
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
Thermal Resistance − chip−to−heatsink
Thermal grease, Thickness ≤ 2.25 Mil,
l = 2.9 W/mK
www.onsemi.com
3
NXH25T120L2Q1PG
Table 3. ELECTRICAL CHARACTERISTICS TJ = 25°C unless otherwise noted
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
VGE = 0 V, VCE = 650 V
ICES
–
–
200
mA
VGE = 15 V, IC = 20 A, TJ = 25°C
VCE(sat)
–
1.49
−
V
–
1.61
−
VGE = VCE, IC = 1.65 mA
VGE(TH)
4.70
5.68
6.50
V
Gate Leakage Current
VGE = 20 V, VCE = 0 V
IGES
–
–
200
nA
Turn−on Delay Time
TJ = 25°C
VCE = 350 V, IC = 15 A
VGE = ±15V, RG = 15 W
td(on)
–
33
–
ns
tr
–
18
–
td(off)
–
126
–
NEUTRAL POINT IGBT CHARACTERISTICS
Collector−Emitter Cutoff Current
Collector−Emitter Saturation Voltage
VGE = 15 V, IC = 20 A, TJ = 125°C
Gate−Emitter Threshold Voltage
Rise Time
Turn−off Delay Time
Fall Time
tf
–
43
–
Turn−on Switching Loss per Pulse
Eon
–
250
–
Turn off Switching Loss per Pulse
Eoff
–
180
–
td(on)
–
31
–
tr
–
19
–
td(off)
–
138
–
tf
–
72
–
Turn−on Switching Loss per Pulse
Eon
–
390
–
Turn off Switching Loss per Pulse
Eoff
–
300
–
Cies
–
3837
–
Output Capacitance
Coes
–
127
–
Reverse Transfer Capacitance
Cres
–
104
–
VCE = 480 V, IC = 20 A, VGE = ±15 V
Qg
–
166
–
nC
Thermal grease, Thickness ≤ 2.25 Mil,
l = 2.9 W/mK
RthJH
–
1.90
–
°C/W
IF = 15 A, TJ = 25°C
VF
–
2.47
3
V
–
1.97
–
trr
–
63
–
ns
Qrr
–
0.45
–
mC
IRRM
–
17
–
A
di/dt
–
313
–
A/ms
Err
–
70
–
mJ
Turn−on Delay Time
Rise Time
Turn−off Delay Time
TJ = 125°C
VCE = 350 V, IC = 15 A
VGE = ±15 V, RG = 15 W
Fall Time
Input Capacitance
Total Gate Charge
Thermal Resistance − chip−to−heatsink
VCE = 20 V, VGE = 0 V, f = 10 kHz
mJ
ns
uJ
pF
HALF BRIDGE DIODE CHARACTERISTICS
Diode Forward Voltage
IF = 15 A, TJ = 125°C
Reverse Recovery Time
Reverse Recovery Charge
Peak Reverse Recovery Current
TJ = 25°C
VCE = 350 V, IC = 15 A
VGE = ±15 V, RG = 15 W
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
Reverse Recovery Time
Reverse Recovery Charge
Peak Reverse Recovery Current
TJ = 125°C
VCE = 350 V, IC = 15 A
VGE = ±15 V, RG = 15 W
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
Thermal Resistance − chip−to−heatsink
Thermal grease, Thickness ≤ 2.25 Mil,
l = 2.9 W/mK
www.onsemi.com
4
trr
–
233
–
ns
Qrr
–
1.55
–
mC
IRRM
–
22
–
A
di/dt
–
76
–
A/ms
Err
–
360
–
mJ
RthJH
–
2.21
–
°C/W
NXH25T120L2Q1PG
Table 3. ELECTRICAL CHARACTERISTICS TJ = 25°C unless otherwise noted
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Nominal resistance
T = 25°C
R25
−
22
−
kW
Nominal resistance
T = 100°C
R100
−
1468
−
W
Deviation of R25
DR/R
−5
5
%
Power dissipation
PD
−
200
−
mW
−
2
−
mW/K
THERMISTOR CHARACTERISTICS
Power dissipation constant
B−value
B(25/50), tolerance ±3%
−
3950
−
K
B−value
B(25/100), tolerance ±3%
−
3998
−
K
ORDERING INFORMATION
Orderable Part Number
Marking
Package
Shipping
NXH25T120L2Q1PG
NXH25T120L2Q1PG
Q1 3−Phase TNPC − Case 180AS
Press−fit Pins
(Pb*Free)
21 Units / Blister Tray
NXH25T120L2Q1PTG
NXH25T120L2Q1PTG
Q1 3−Phase TNPC − Case 180AS
Press−fit Pins
with pre−applied thermal interface material (TIM)
(Pb*Free)
21 Units / Blister Tray
www.onsemi.com
5
NXH25T120L2Q1PG
TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT AND DIODE
50
VGE = 19 to 11 V
TJ = 25°C
40
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
50
45
VGE = 9 V
35
30
25
20
15
10
5
0
VGE = 7 V
0
1
2
3
4
35
30
25
20
15
VGE = 7 V
10
5
0
0
1
2
3
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 2. Typical Output Characteristics
Figure 3. Typical Output Characteristics
4
30
45
IF, FORWARD CURRENT (A)
IC, COLLECTOR CURRENT (A)
VGE = 9 V
TJ = 150°C
40
VCE, COLLECTOR−EMITTER VOLTAGE (V)
50
40
35
30
25
20
15
10
5
0
VGE = 19 to 11 V
45
TJ = 150°C
TJ = 25°C
0
2
4
6
8
25
TJ = 150°C
20
TJ = 25°C
15
10
5
0
10
0
1
2
3
VGE, GATE−EMITTER VOLTAGE (V)
VF, FORWARD VOLTAGE (V)
Figure 4. Typical Transfer Characteristics
Figure 5. Diode Forward Characteristics
www.onsemi.com
6
4
NXH25T120L2Q1PG
DUTY CYCLE PEAK RESPONSE (°C/W)
TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT AND DIODE
10
1
0.1
DUT = 50%
20%
10%
5%
2%
0.01
1%
Single Pulse
0.001
0.0001
0.00001
0.0001
0.001
0.01
0.1
1
10
1
10
PULSE ON TIME (s)
DUTY CYCLE PEAK RESPONSE (°C/W)
Figure 6. Transient Thermal Impedance (Half Bridge IGBT)
10
DUT = 50%
1
20%
10%
5%
0.1
0.01
2%
1%
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
PULSE ON TIME (s)
Figure 7. Transient Thermal Impedance (Half Bridge Diode)
www.onsemi.com
7
NXH25T120L2Q1PG
TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT AND DIODE
1K
Single Nonrepetitive
Pulse TC = 25°C
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
1K
100
50 ms
100 ms
10
1 ms
1
0.1
Curves must be derated
linearly with increase in
temperature
1
10
DC
100
1K
100
10
VGE = 15 V
TC = 150°C
1
10K
1
Figure 8. FBSOA
Figure 9. RBSOA
VGE, GATE VOLTAGE (V)
10
8
6
4
2
0
0
1K
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE = 600 V
IC = 25 A
VGE = 15 V
12
100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
16
14
10
50
100
150
200
250
300
350
400
Qg, GATE CHARGE (nC)
Figure 10. Gate Voltage vs. Gate Charge
www.onsemi.com
8
10K
NXH25T120L2Q1PG
TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT AND DIODE
50
VGE = 19 to 11 V
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
50
45
40
35
TJ = 25°C
30
25
20
VGE = 9 V
15
10
5
0
VGE = 7 V
0
1
2
3
4
VGE = 9 V
20
15
10
5
0
VGE = 7 V
0
1
2
3
4
Figure 12. Typical Output Characteristics
30
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
30
25
Figure 11. Typical Output Characteristics
25
TJ = 25°C
20
VGE = 9 V
15
10
5
VGE = 7 V
0
2
4
6
VGE = 19 to 11 V
25
VGE = 9 V
20
TJ = 150°C
15
10
VGE = 7 V
5
0
8
0
2
4
6
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 13. Typical Output Characteristics
(IC vs. VDT)
Figure 14. Typical Output Characteristics
(IC vs. VDT)
8
30
50
45
IF, FORWARD CURRENT (A)
IC, COLLECTOR CURRENT (A)
TJ = 150°C
35
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VGE = 19 to 11 V
40
35
30
25
20
15
10
TJ = 150°C
5
0
40
VCE, COLLECTOR−EMITTER VOLTAGE (V)
30
0
VGE = 19 to 11 V
45
0
2
4
6
TJ = 25°C
8
10
25
20
15
5
0
12
TJ = 25°C
TJ = 150°C
10
0
1
2
3
VGE, GATE−EMITTER VOLTAGE (V)
VF, FORWARD VOLTAGE (V)
Figure 15. Typical Transfer Characteristics
Figure 16. Diode Forward Characteristics
www.onsemi.com
9
4
NXH25T120L2Q1PG
DUTY CYCLE PEAK RESPONSE (°C/W)
TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT AND DIODE
10
DUT = 50%
1
0.1
20%
10%
5%
2%
1%
0.01
0.001
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
1
10
PULSE ON TIME (s)
DUTY CYCLE PEAK RESPONSE (°C/W)
Figure 17. Transient Thermal Impedance (Neutral Point IGBT)
10
DUT = 50%
1
20%
10%
5%
0.1
2%
1%
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
PULSE ON TIME (s)
Figure 18. Transient Thermal Impedance (Neutral Point Diode)
www.onsemi.com
10
NXH25T120L2Q1PG
TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT AND DIODE
1K
Single Nonrepetitive
Pulse TC = 25°C
100
50 ms
100 ms
10
1 ms
1
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
1K
Curves must be derated
linearly with increase in
temperature
1
DC
10
100
1K
100
10
VGE = 15 V
TC = 150°C
1
1
Figure 19. FBSOA
Figure 20. RBSOA
VGE, GATE VOLTAGE (V)
10
8
6
4
2
0
0
1K
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE = 480 V
IC = 20 A
VGE = 15 V
12
100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
16
14
10
20
40
60
80
100
120
140
160
180
Qg, GATE CHARGE (nC)
Figure 21. Gate Voltage vs. Gate Charge
www.onsemi.com
11
10K
NXH25T120L2Q1PG
TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT COMUTATES NEUTRAL POINT DIODE
0.6
1.0
VCE = 350 V
VGE = ±15 V
RG = 15 W
0.8
0.6
25°C
0.4
0.2
0
5
10
15
20
25
0.3
30
0.1
35
10
15
20
125°C
0.6
0.5
0.4
0.2
0.3
0
0.2
5
10
15
20
25
30
35
VCE = 350 V
VGE = ±15 V
IC = 15 A
25°C
0
5
10
15
20
25
30
IC (A)
RG (W)
Figure 24. Typical Switching Loss Eoff vs. IC
Figure 25. Typical Switching Loss Eoff vs. RG
70
120
VCE = 350 V
VGE = ±15 V
RG = 15 W
25°C
125°C
80
TDon (ns)
125°C
55
60
50
40
45
20
10
15
20
25
30
0
35
35
25°C
VCE = 350 V
VGE = ±15 V
IC = 15 A
120
60
5
35
0.7
0.4
0
30
0.8
125°C
25°C
65
25
Figure 23. Typical Switching Loss Eon vs. RG
0.6
40
5
Figure 22. Typical Switching Loss Eon vs. IC
0.8
0
0
RG (W)
VCE = 350 V
VGE = ±15 V
RG = 15 W
1.0
Eoff (mJ)
25°C
IC (A)
1.2
TDon (ns)
0.4
0.2
Eoff (mJ)
0
125°C
VCE = 350 V
VGE = ±15 V
IC = 15 A
0.5
Eon (mJ)
Eon (mJ)
125°C
0
5
10
15
20
25
30
35
IC (A)
RG (W)
Figure 26. Typical Switching Time TDon vs. IC
Figure 27. Typical Switching Time TDon vs. RG
www.onsemi.com
12
NXH25T120L2Q1PG
TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT COMUTATES NEUTRAL POINT DIODE
500
380
125°C
360
400
320
TDoff (ns)
TDoff (ns)
340
300
280
25°C
260
0
5
10
15
20
25
30
5
10
15
20
25
30
35
IC (A)
RG (W)
Figure 28. Typical Switching Time TDoff vs. IC
Figure 29. Typical Switching Time TDoff vs. RG
VCE = 350 V
VGE = ±15 V
IC = 15 A
50
40
30
Tr (ns)
Tr (ns)
0
60
35
25
125°C
30
20
20
125°C
25°C
10
15
25°C
0
5
10
15
20
25
30
0
35
0
5
10
15
20
25
30
IC (A)
RG (W)
Figure 30. Typical Switching Time Tr vs. IC
Figure 31. Typical Switching Time Tr vs. RG
35
300
300
125°C
250
250
200
125°C
VCE = 350 V
VGE = ±15 V
RG = 15 W
150
Tf (ns)
Tf (ns)
250
100
35
VCE = 350 V
VGE = ±15 V
RG = 15 W
45
25°C
100
200
VCE = 350 V
VGE = ±15 V
IC = 15 A
150
100
50
0
300
150
40
10
25°C
350
200
240
220
125°C
VCE = 350 V
VGE = ±15 V
IC = 15 A
450
VCE = 350 V
VGE = ±15 V
RG = 15 W
0
5
10
15
20
25
30
50
35
25°C
0
5
10
15
20
25
30
IC (A)
RG (W)
Figure 32. Typical Switching Time Tf vs. IC
Figure 33. Typical Switching Time Tf vs. RG
www.onsemi.com
13
35
NXH25T120L2Q1PG
TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT COMUTATES NEUTRAL POINT DIODE
0.14
0.12
0.12
125°C
0.10
VCE = 350 V
VGE = ±15 V
RG = 15 W
0.08
Err (mJ)
Err (mJ)
0.10
0
5
10
25°C
0.04
25°C
0.04
15
20
25
30
0.02
35
0
5
10
15
20
Figure 34. Typical Reverse Recovery Energy
vs. IC
Figure 35. Typical Reverse Recovery Energy
vs. RG
35
120
VCE = 350 V
VGE = ±15 V
RG = 15 W
80
Trr (ns)
70
65
VCE = 350 V
VGE = ±15 V
IC = 15 A
100
75
80
60
25°C
125°C
40
60
25°C
0
5
10
15
20
25
30
20
35
0
5
10
15
20
25
30
35
IC (A)
RG (W)
Figure 36. Typical Reverse Recovery Time vs.
IC
Figure 37. Typical Reverse Recovery Time vs.
RG
0.8
0.9
0.8
125°C
0.7
125°C
0.7
0.6
0.6
Qrr (mC)
Qrr (mC)
30
RG (W)
125°C
VCE = 350 V
VGE = ±15 V
RG = 15 W
0.5
0.4
25°C
0.3
0.2
0
5
10
VCE = 350 V
VGE = ±15 V
IC = 15 A
0.5
0.4
0.3
0.1
25
IC (A)
85
Trr (ns)
0.08
0.06
0.06
55
125°C
VCE = 350 V
VGE = ±15 V
IC = 15 A
15
20
25
30
0.2
35
25°C
0
5
10
15
20
25
30
IC (A)
RG (W)
Figure 38. Typical Reverse Recovery Charge
vs. IC
Figure 39. Typical Reverse Recovery Charge
vs. RG
www.onsemi.com
14
35
NXH25T120L2Q1PG
TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT COMUTATES NEUTRAL POINT DIODE
25
30
VCE = 350 V
VGE = ±15 V
RG = 15 W
15
20
10
25°C
25°C
5
0
5
10
15
20
25
30
0
35
0
5
10
15
20
25
30
IC (A)
RG (W)
Figure 40. Typical Reverse Recovery Current
vs. IC
Figure 41. Typical Reverse Recovery Current
vs. RG
500
1600
125°C
450
125°C
1400
400
VCE = 350 V
VGE = ±15 V
RG = 15 W
300
250
200
25°C
150
35
VCE = 350 V
VGE = ±15 V
IC = 15 A
1200
350
di/dt (A/ms)
di/dt (A/ms)
15
10
5
1000
800
600
25°C
400
200
100
50
VCE = 350 V
VGE = ±15 V
IC = 15 A
125°C
Irrm (A)
Irrm (A)
20
0
125°C
25
0
5
10
15
20
25
30
0
35
0
5
10
15
20
25
IC (A)
RG (W)
Figure 42. Typical di/dt vs. IC
Figure 43. Typical di/dt vs. RG
www.onsemi.com
15
35
35
NXH25T120L2Q1PG
TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT COMUTATES HALF BRIDGE DIODE
1.0
0.8
0.55
125°C
VCE = 350 V
VGE = ±15 V
RG = 15 W
0.9
0.45
Eon (mJ)
Eon (mJ)
0.7
0.6
25°C
0.5
0.4
25°C
0.35
0.30
0.20
0.2
0
5
10
15
20
25
30
0.15
35
0
15
20
25
30
RG (W)
Figure 44. Typical Switching Energy Eon vs. IC
Figure 45. Typical Switching Energy Eon vs.
RG
25°C
VCE = 350 V
VGE = ±15 V
RG = 15 W
0.5
35
0.28
Eoff (mJ)
125°C
0.4
0.3
0.26
0.22
0.1
0.20
0
0.18
5
10
15
20
25
30
35
VCE = 350 V
VGE = ±15 V
IC = 15 A
0.24
0.2
0
125°C
0.30
25°C
0
5
10
15
20
25
30
IC (A)
RG (W)
Figure 46. Typical Switching Energy Eoff vs. IC
Figure 47. Typical Switching Energy Eoff vs.
RG
38
35
70
125°C
36
60
VCE = 350 V
VGE = ±15 V
IC = 15 A
34
50
32
TDon (ns)
TDon (ns)
10
0.32
0.6
125°C
30
28
25°C
24
0
5
10
15
20
25
30
25°C
40
30
VCE = 350 V
VGE = ±15 V
RG = 15 W
26
22
5
IC (A)
0.7
Eoff (mJ)
0.40
0.25
0.3
0.1
125°C
VCE = 350 V
VGE = ±15 V
IC = 15 A
0.50
20
10
35
0
5
10
15
20
25
30
35
IC (A)
RG (W)
Figure 48. Typical Switching Time TDon vs. IC
Figure 49. Typical Switching Time TDon vs. RG
www.onsemi.com
16
NXH25T120L2Q1PG
TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT COMUTATES HALF BRIDGE DIODE
280
240
125°C
260
VCE = 350 V
VGE = ±15 V
RG = 15 W
240
200
TDoff (ns)
TDoff (ns)
200
180
25°C
160
160
140
120
140
100
120
80
0
5
10
15
20
25
30
60
35
0
5
10
15
20
30
35
RG (W)
Figure 50. Typical Switching Time TDoff vs. IC
Figure 51. Typical Switching Time TDoff vs. RG
35
VCE = 350 V
VGE = ±15 V
RG = 15 W
30
25
IC (A)
35
125°C
25°C
25
25°C
25
125°C
VCE = 350 V
VGE = ±15 V
IC = 15 A
30
Tr (ns)
Tr (ns)
25°C
180
220
100
125°C
VCE = 350 V
VGE = ±15 V
IC = 15 A
220
20
20
15
15
10
10
0
5
10
15
20
25
30
5
35
10
15
20
25
30
RG (W)
Figure 52. Typical Switching Time Tr vs. IC
Figure 53. Typical Switching Time Tr vs. RG
90
VCE = 350 V
VGE = ±15 V
RG = 15 W
80
75
125°C
70
70
65
Tf (ns)
60
50
25°C
40
VCE = 350 V
VGE = ±15 V
IC = 15 A
60
55
30
50
20
45
10
40
5
10
35
80
125°C
0
5
IC (A)
100
Tf (ns)
0
15
20
25
30
35
25°C
0
5
10
15
20
25
30
IC (A)
RG (W)
Figure 54. Typical Switching Time Tf vs. IC
Figure 55. Typical Switching Time Tf vs. RG
www.onsemi.com
17
35
NXH25T120L2Q1PG
TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT COMUTATES HALF BRIDGE DIODE
0.8
VCE = 350 V
VGE = ±15 V
RG = 15 W
0.7
0.35
0.30
0.5
0.4
0.3
0.10
0.1
0.05
0
5
10
15
20
25
30
0
35
5
10
15
20
25
30
Figure 56. Typical Reverse Recovery Energy
vs. IC
Figure 57. Typical Reverse Recovery Energy
vs. RG
400
125°C
300
35
125°C
VCE = 350 V
VGE = ±15 V
IC = 15 A
350
Trr (ns)
250
300
200
25°C
150
200
100
25°C
100
50
0
5
10
15
20
25
0
35
0
5
10
15
20
25
30
35
RG (W)
Figure 58. Typical Reverse Recovery Time vs.
IC
Figure 59. Typical Reverse Recovery Time vs.
RG
1.8
125°C
VCE = 350 V
VGE = ±15 V
RG = 15 W
2.5
30
IC (A)
3.0
125°C
1.6
1.4
Qrr (mC)
2.0
1.5
1.0
25°C
1.2
1.0
VCE = 350 V
VGE = ±15 V
IC = 15 A
0.8
0.6
0.5
0
0
25°C
RG (W)
400
0
VCE = 350 V
VGE = ±15 V
IC = 15 A
IC (A)
VCE = 350 V
VGE = ±15 V
RG = 15 W
500
Trr (ns)
0.20
0.15
25°C
600
Qrr (mC)
0.25
0.2
0
125°C
0.40
Err (mJ)
Err (mJ)
0.6
0.45
125°C
25°C
0.4
0
5
10
15
20
25
30
0.2
35
0
5
10
15
20
25
30
IC (A)
RG (W)
Figure 60. Typical Reverse Recovery Charge
vs. IC
Figure 61. Typical Reverse Recovery Charge
vs. RG
www.onsemi.com
18
35
NXH25T120L2Q1PG
TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT COMUTATES HALF BRIDGE DIODE
26
35
125°C
24
VCE = 350 V
VGE = ±15 V
IC = 15 A
30
125°C
20
Irrm (A)
Irrm (A)
22
18
16
25°C
VCE = 350 V
VGE = ±15 V
RG = 15 W
14
12
0
5
10
15
20
25
20
15
10
35
0
5
10
15
20
25
30
IC (A)
RG (W)
Figure 62. Typical Reverse Recovery Current
vs. IC
Figure 63. Typical Reverse Recovery Current
vs. RG
700
35
2500
25°C
VCE = 350 V
VGE = ±15 V
RG = 15 W
600
400
300
VCE = 350 V
VGE = ±15 V
IC = 15 A
25°C
2000
di/dt (A/ms)
500
di/dt (A/ms)
30
25°C
25
1500
1000
200
125°C
500
100
0
0
5
10
15
20
25
30
0
35
125°C
0
5
10
15
20
25
IC (A)
RG (W)
Figure 64. Typical di/dt vs. IC
Figure 65. Typical di/dt vs. RG
www.onsemi.com
19
35
35
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PIM44, 71x37.4
CASE 180AS
ISSUE O
DATE 25 JUN 2018
DOCUMENT NUMBER:
98AON92314G
DESCRIPTION:
PIM44, 71x37.4
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
PIM44, 71x37.4
CASE 180AS
ISSUE O
DATE 15 JUN 2018
GENERIC
MARKING DIAGRAM*
XXXXXXXXXXXXXXXXXXXXXG
ATYYWW
XXXXX = Specific Device Code
G
= Pb−Free Package
AT
= Assembly & Test Site Code
YYWW = Year and Work Week Code
*This information is generic. Please refer to device data
sheet for actual part marking. Pb−Free indicator, “G” or
microdot “ G”, may or may not be present. Some products
may not follow the Generic Marking.
DOCUMENT NUMBER:
98AON92314G
DESCRIPTION:
PIM44, 71x37.4
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
www.onsemi.com
© Semiconductor Components Industries, LLC, 2018
2
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
工商网监
湘ICP备2023018690号
