NXH100B120H3Q0SG

DATA SHEET www.onsemi.com Si/SiC Hybrid Modules – EliteSiC, Dual Boost, 1200 V, 50 A IGBT + 1200 V, 20 A SiC Diode, Q0 Package Q0BOOST CASE 180AJ SOLDER PINS NXH100B120H3Q0, NXH100B120H3Q0PG-R The NXH100B120H3Q0 is a power module containing a dual boost stage. The integrated field stop trench IGBTs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability. Features • • • • • • • 1200 V Ultra Field Stop IGBTs Low Reverse Recovery and Fast Switching SiC Diodes 1600 V Bypass and Anti−parallel Diodes Low Inductive Layout Solderable Pins or Press−Fit Pins Thermistor Options with Pre−Applied Thermal Interface Material (TIM) and Without Pre−Applied TIM Q0BOOST CASE 180BF PRESS−FIT PINS MARKING DIAGRAM NXH100B120H3Q0xxG ATYYWW xx YYWW A T G = P, PT, S or ST = Year and Work Week Code = Assembly Site Code = Test Site Code = Pb−Free Package PIN CONNECTIONS Typical Applications • Solar Inverter • Uninterruptible Power Supplies • Energy Storage Systems ORDERING INFORMATION See detailed ordering and shipping information on page 4 of this data sheet. Figure 1. NXH100B120H3Q0xG/PG−R Schematic Diagram © Semiconductor Components Industries, LLC, 2016 March, 2023 − Rev. 8 1 Publication Order Number: NXH100B120H3Q0/D NXH100B120H3Q0, NXH100B120H3Q0PG−R ABSOLUTE MAXIMUM RATINGS (Note 1) TJ = 25°C Unless Otherwise Noted Symbol Value Unit Collector−Emitter Voltage VCES 1200 V Gate−Emitter Voltage VGE ±20 V Continuous Collector Current @ TC < 80°C (TJ = 175°C) IC1 61 A Continuous Collector Current @ TC < 102°C (TJ = 175°C) IC2 50 A ICpulse 150 A Ptot 186 W Minimum Operating Junction Temperature TJMIN −40 °C Maximum Operating Junction Temperature TJMAX 150 °C VRRM 1200 V Continuous Forward Current @ TC < 80°C (TJ = 175°C) IF1 34 A Continuous Forward Current @ TC < 132°C (TJ = 175°C) IF2 20 A Maximum Power Dissipation @ TC = 80°C (TJ = 175°C) Ptot 114 W Surge Forward Current (60 Hz single half−sine wave) IFSM 185 A I2t 142 A2s Minimum Operating Junction Temperature TJMIN −40 °C Maximum Operating Junction Temperature TJMAX 150 °C VRRM 1600 V IF1 58 A Rating BOOST IGBT Pulsed Collector Current (TJ = 175°C) Maximum Power Dissipation @ TC = 80°C (TJ = 175°C) BOOST DIODE Peak Repetitive Reverse Voltage I2t − value (60 Hz single half−sine wave) BYPASS DIODE / IGBT PROTECTION DIODE Peak Repetitive Reverse Voltage Continuous Forward Current @ TC < 80°C (TJ = 175°C) Continuous Forward Current @ TC < 141°C (TJ = 175°C) IF2 25 A Repetitive Peak Forward Current (TJ = 175°C, tp limited by TJmax) IFRM 75 A Maximum Power Dissipation @ TC = 80°C (TJ = 175°C) Ptot 91 W Minimum Operating Junction Temperature TJMIN −40 °C Maximum Operating Junction Temperature TJMAX 150 °C Tstg −40 to 125 °C Vis 3000 VRMS 12.7 mm THERMAL PROPERTIES Storage Temperature range INSULATION PROPERTIES Isolation test voltage, t = 1 sec, 60 Hz Creepage distance Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe Operating parameters. RECOMMENDED OPERATING RANGES Rating Symbol Min Max Unit TJ −40 150 °C Module Operating Junction Temperature Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. www.onsemi.com 2 NXH100B120H3Q0, NXH100B120H3Q0PG−R ELECTRICAL CHARACTERISTICS TJ = 25°C Unless Otherwise Noted Parameter Test Conditions Symbol Min Typ Max Unit ICES – – 200 mA VCE(sat) – 1.77 2.3 V BOOST IGBT CHARACTERISTICS Collector−Emitter Cutoff Current VGE = 0 V, VCE = 1200 V Collector−Emitter Saturation Voltage VGE = 15 V, IC = 50 A, TJ = 25°C – 1.93 – Gate−Emitter Threshold Voltage VGE = VCE, IC = 1 mA VGE(TH) 4.6 5.27 6.5 V Gate Leakage Current VGE = 20 V, VCE = 0 V IGES – − 800 nA Turn−on Delay Time TJ = 25°C VCE = 700 V, IC = 50 A VGE = ±15 V, RG = 4 W td(on) – 44 – ns tr – 16 – td(off) – 203 – VGE = 15 V, IC = 50 A, TJ = 150°C Rise Time Turn−off Delay Time Fall Time tf – 23 – Turn−on Switching Loss per Pulse Eon – 700 – Turn−off Switching Loss per Pulse Eoff – 1500 – td(on) – 43 – tr – 18 – td(off) – 233 – Turn−on Delay Time Rise Time TJ = 125°C VCE = 700 V, IC = 50 A VGE = ±15 V, RG = 4 W Turn−off Delay Time Fall Time ns tf – 58 – Turn−on Switching Loss per Pulse Eon – 800 – Turn−off Switching Loss per Pulse Eoff – 2600 – Cies – 9075 – Output Capacitance Coes – 173 – Reverse Transfer Capacitance Cres – 147 – Qg – 409 – nC RthJC – 0.51 – °C/W RthJH – 0.82 – °C/W Input Capacitance Total Gate Charge VCE = 20 V, VGE = 0 V, f = 10 kHz VCE = 600 V, IC = 40 A, VGE = 15 V Thermal Resistance − chip−to−case Thermal Resistance − chip−to−heatsink Thermal grease, Thickness ≈ 100 mm, λ = 2.87 W/mK pF BOOST DIODE CHARACTERISTICS Diode Reverse Leakage Current VR = 1200 V IR – − 300 mA Diode Forward Voltage IF = 20 A, TJ = 25°C VF – 1.44 1.8 V – 1.93 – trr – 15 – ns Qrr – 108 – nC Peak Reverse Recovery Current IRRM – 11 – A Peak Rate of Fall of Recovery Current di/dt – 1500 – A/ms Err – 20 – mJ trr – 16 – ns Qrr – 115 nC Peak Reverse Recovery Current IRRM – 12 A Peak Rate of Fall of Recovery Current di/dt – 1400 A/ms Err – 22 mJ RthJC – 0.83 °C/W RthJH – 1.15 IF = 20 A, TJ = 150°C Reverse Recovery Time Reverse Recovery Charge TJ = 25°C VCE = 700 V, IC = 50 A VGE = ±15 V, RG = 4 W Reverse Recovery Energy Reverse Recovery Time Reverse Recovery Charge TJ = 125°C VCE = 700 V, IC = 50 A VGE = ±15 V, RG = 4 W Reverse Recovery Energy Thermal Resistance − chip−to−case Thermal Resistance − chip−to− heatsink Thermal grease, Thickness ≈ 100 mm, λ = 2.87 W/mK www.onsemi.com 3 – °C/W NXH100B120H3Q0, NXH100B120H3Q0PG−R ELECTRICAL CHARACTERISTICS TJ = 25°C Unless Otherwise Noted Parameter Test Conditions Symbol Min Typ Max Unit BYPASS DIODE/IGBT PROTECTION DIODE CHARACTERISTICS Diode Reverse Leakage Current VR = 1600 V, TJ = 25°C IR – − 100 mA Diode Forward Voltage IF = 25 A, TJ = 25°C VF – 1.0 1.4 V − 0.90 − RthJC – 1.04 – °C/W RthJH – 1.41 – °C/W R25 − 22 − kW R100 − 1486 − W Deviation of R25 DR/R −5 − 5 % Power dissipation PD − 200 − mW − 2 − mW/K IF = 25 A, TJ = 150°C Thermal Resistance − chip−to−case Thermal Resistance − chip−to− heatsink Thermal grease, Thickness ≈ 100 mm, λ = 2.87 W/mK THERMISTOR CHARACTERISTICS Nominal resistance Nominal resistance T = 100°C Power dissipation constant B−value B(25/50), tolerance ±3% − 3950 − K B−value B(25/100), tolerance ±3% − 3998 − K Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Orderable Part Number Marking Package Shipping NXH100B120H3Q0PG, NXH100B120H3Q0PG−R Q0BOOST − Case 180BF (Pb−Free and Halide−Free) Press−Fit Pins 24 Units / Blister Tray NXH100B120H3Q0SG Q0BOOST − Case 180AJ (Pb−Free and Halide−Free) Solder Pins 24 Units / Blister Tray NXH100B120H3Q0PTG NXH100B120H3Q0PTG Q0BOOST − Case 180BF (Pb−Free and Halide−Free) Press−Fit Pins, Thermal Interface Material (TIM) 24 Units / Blister Tray NXH100B120H3Q0STG NXH100B120H3Q0STG Q0BOOST − Case 180AJ (Pb−Free and Halide−Free) Solder Pins, Thermal Interface Material (TIM) 24 Units / Blister Tray NXH100B120H3Q0PG, NXH100B120H3Q0PG−R NXH100B120H3Q0SG www.onsemi.com 4 NXH100B120H3Q0, NXH100B120H3Q0PG−R TYPICAL CHARACTERISTICS Boost IGBT & IGBT Protection Diode / Bypass Diode 150 TJ= 25°C TJ= 150°C VGE= 20 V 120 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 150 VGE= 11 V 90 60 30 VGE= 11 V 90 60 30 0 0 0 1 2 3 5 4 0 VCE, COLLECTOR−EMITTER VOLTAGE (V) 1 2 3 4 5 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 2. IGBT Typical Output Characteristics Figure 3. IGBT Typical Output Characteristics 80 150 70 120 90 IF, FORWARD CURRENT (A) I C , C O L L ECT O R CU R R EN T ( A ) VGE= 20 V 120 150°C 60 30 60 50 40 30 150°C 20 25°C 10 25°C 0 0 0 2 4 6 8 10 12 0,0 VGE, GATE−EMITTER VOLTAGE (V) 0,5 1,0 VF, FORWARD VOLTAGE (V) Figure 5. Diode Forward Characteristics Figure 4. IGBT Typical Transfer Characteristics Figure 7. RBSOA Figure 6. FBSOA www.onsemi.com 5 1,5 NXH100B120H3Q0, NXH100B120H3Q0PG−R TYPICAL CHARACTERISTICS Boost IGBT & IGBT Protection Diode / Bypass Diode Figure 8. Typical Switching Loss Eon vs. IC Figure 9. Typical Switching Loss Eon vs. RG Figure 10. Typical Switching Loss Eoff vs. IC Figure 11. Typical Switching Loss Eoff vs. RG Figure 12. Typical Switching Time Tdon vs. IC Figure 13. Typical Switching Time Tdon vs. RG www.onsemi.com 6 NXH100B120H3Q0, NXH100B120H3Q0PG−R TYPICAL PERFORMANCE CHARACTERISTICS Figure 14. Typical Switching Time Tdoff vs. IC Figure 15. Typical Switching Time Tdoff vs. RG Figure 16. Typical Switching Time Tron vs. IC Figure 17. Typical Switching Time Tron vs. RG Figure 19. Typical Switching Time Tf vs RG Figure 18. Typical Switching Time Tf vs. IC www.onsemi.com 7 NXH100B120H3Q0, NXH100B120H3Q0PG−R TYPICAL PERFORMANCE CHARACTERISTICS Figure 20. Typical Reverse Recovery Energy vs. IC Figure 21. Typical Reverse Recovery Energy vs. RG Figure 22. Typical Reverse Recovery Time vs. IC Figure 23. Typical Reverse Recovery Time vs. RG Figure 24. Typical Reverse Recovery Charge vs. IC Figure 25. Typical Reverse Recovery Charge vs. RG www.onsemi.com 8 NXH100B120H3Q0, NXH100B120H3Q0PG−R TYPICAL PERFORMANCE CHARACTERISTICS Figure 26. Typical Reverse Recovery Current vs. IC Figure 27. Typical Reverse Recovery Current vs. RG Figure 28. Typical di/dt vs. IC 16 VCE = 600 V IC = 40 A VGE = 15 V 14 VGE, Gate Voltage (V) Figure 29. Typical di/dt vs.RG 12 10 8 6 4 2 0 0 100 200 300 400 Qg, Gate Charge (nC) Figure 30. Gate Voltage vs. Gate Charge www.onsemi.com 9 500 NXH100B120H3Q0, NXH100B120H3Q0PG−R TYPICAL PERFORMANCE CHARACTERISTICS Figure 31. IGBT Junction−to−Case Transient Thermal Impedance www.onsemi.com 10 NXH100B120H3Q0, NXH100B120H3Q0PG−R TYPICAL PERFORMANCE CHARACTERISTICS − Boost Diode Figure 32. Diode Junction−to−Case Transient Thermal Impedance IF, FORWARD CURRENT (A) 60 150°C 50 25°C 40 30 20 10 0 0 1 2 3 4 5 VF, FORWARD VOLTAGE (V) Figure 33. Diode Forward Characteristic Figure 34. Diode Junction−to−Case Transient Thermal Impedance www.onsemi.com 11 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PIM22, 55x32.5 / Q0BOOST CASE 180AJ ISSUE B DATE 08 NOV 2017 GENERIC MARKING DIAGRAM* XXXXXXXXXXXXXXXXG ATYYWW XXXXX = Specific Device Code G = Pb−Free Package AT = Assembly & Test Site Code YYWW = Year and Work Week Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: Electronic versionsON are uncontrolled MOUNTING FOOTPRINT PAGE 2except when accessed directly from the Document Repository. 98AON63481G Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PIM22 55X32.5 / Q0BOOST (SOLDER PIN) PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com PIM22, 55x32.5 / Q0BOOST CASE 180AJ ISSUE B DOCUMENT NUMBER: DESCRIPTION: 98AON63481G DATE 08 NOV 2017 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PIM22 55X32.5 / Q0BOOST (SOLDER PIN) PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PIM22 55x32.5 (PRESSFIT PIN) CASE 180BF ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON07824H DATE 21 MAY 2019 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PIM22 55x32.5 (PRESSFIT PIN) PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com PIM22 55x32.5 (PRESSFIT PIN) CASE 180BF ISSUE O DATE 17 MAY 2019 GENERIC MARKING DIAGRAM* XXXXXXXXXXXXXXXXXG ATYYWW XXXXX = Specific Device Code G = Pb−Free Package AT = Assembly & Test Site Code YYWW = Year and Work Week Code DOCUMENT NUMBER: DESCRIPTION: 98AON07824H *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PIM22 55x32.5 (PRESSFIT PIN) PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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