NXH300B100H4Q2F2SG

DATA SHEET www.onsemi.com Si/SiC Hybrid Modules – EliteSiC, 3 Channel Flying Capacitor Boost 1000 V, 100 A IGBT, 1200 V, 30 A SiC Diode, Q2 Package PIM53, 93x47 (PRESSFIT) CASE 180CB NXH300B100H4Q2F2, NXH300B100H4Q2F2SG-R This high−density, integrated power module combines high−performance IGBTs with 1200 V SiC diode. Features       PIM53, 93x47 (SOLDER PIN) CASE 180CC Extremely Efficient Trench with Field Stop Technology Low Switching Loss Reduces System Power Dissipation Module Design Offers High Power Density Low Inductive Layout 3−channel in Q2BOOST Package These are Pb−Free Devices MARKING DIAGRAM NXH300B100H4Q2F2xG ATYYWW NXH300B100H4Q2F2x = Specific Device Code (x = P, S) AT = Assembly & Test Site Code YYWW = Year and Work Week Code Typical Applications  Solar Inverter  Uninterruptible Power Supplies PIN CONNECTION ORDERING INFORMATION See detailed ordering and shipping information on page 11 of this data sheet. Figure 1. NXH300B100H4Q2F2PG/SG/SG−R Schematic Diagram  Semiconductor Components Industries, LLC, 2020 March, 2023 − Rev. 4 1 Publication Order Number: NXH300B100H4Q2F2/D NXH300B100H4Q2F2, NXH300B100H4Q2F2SG−R ABSOLUTE MAXIMUM RATINGS (Note 1) (TJ = 25C unless otherwise noted) Symbol Parameter Value Unit IGBT (T11, T21, T12, T22, T13, T23) VCES Collector−Emitter voltage 1000 V VGE Gate−Emitter Voltage Positive transient gate−emitter voltage (Tpulse = 5 s, D < 0.10) 20 30 V IC Continuous Collector Current (@ VGE = 20 V, TC = 80C) 73 A IC(Pulse) Pulsed Peak Collector Current @ TC = 80C (TJ = 150C) 219 A Ptot Power Dissipation (TJ = 150C, TC = 80C) 194 W TJMIN Minimum Operating Junction Temperature −40 C TJMAX Maximum Operating Junction Temperature 175 C 1600 V IGBT INVERSE DIODE (D11, D21, D12, D22, D13, D23) AND BYPASS DIODE (D51, D61, D52, D62, D53, D63) VRRM IF Peak Repetitive Reverse Voltage Continuous Forward Current @ TC = 80C 36 A IFRM Repetitive Peak Forward Current (TJ = 150C, TJ limited by TJmax) 108 A Ptot Maximum Power Dissipation @ TC = 80C (TJ = 150C) 79 W TJMIN Minimum Operating Junction Temperature −40 C TJMAX Maximum Operating Junction Temperature 150 C 1200 V Continuous Forward Current @ TC = 80C 36 A IFRM Repetitive Peak Forward Current (TJ = 150C, TJ limited by TJmax) 108 A Ptot Maximum Power Dissipation @ TC = 80C (TJ = 150C) 104 W TJMIN Minimum Operating Junction Temperature −40 C TJMAX Maximum Operating Junction Temperature 175 C BOOST SILICON CARBIDE SCHOTTKY DIODE (D31, D41, D32, D42, D33, D43) VRRM IF Peak Repetitive Reverse Voltage Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe Operating parameters. THERMAL AND INSULATION PROPERTIES (Note 1) (TJ = 25C unless otherwise noted) Symbol Rating Value Unit Operating Temperature under Switching Condition −40 to 150 C Storage Temperature Range −40 to 125 C Isolation Test Voltage, t = 2 sec, 50 Hz (Note 3) 4000 VRMS Creepage Distance 12.7 mm Comparative Tracking Index >600 THERMAL PROPERTIES TVJOP Tstg INSULATION PROPERTIES Vis CTI Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe Operating parameters. 3. 4000 VACRMS for 1 second duration is equivalent to 3333 VACRMS for 1 minute duration. www.onsemi.com 2 NXH300B100H4Q2F2, NXH300B100H4Q2F2SG−R ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Symbol Parameter Test Condition Min Typ Max Unit 1000 1118 – V V IGBT (T11, T21, T12, T22, T13, T23) V(BR)CES Collector−Emitter Breakdown Voltage VGE = 0 V, IC =1 mA VCE(SAT) Collector−Emitter Saturation Voltage VGE = 15 V, IC = 100 A, TC = 25C – 1.80 2.25 VGE = 15 V, IC = 100 A, TC = 150C – 2.03 – 5.9 VGE(TH) Gate−Emitter Threshold Voltage VGE = VCE, IC = 100 mA 4.1 5.08 V ICES Collector−Emitter Cutoff Current VGE = 0 V, VCE = 1000 V – − 800 A IGES Gate Leakage Current VGE = 20 V, VCE = 0 V – – 400 nA rg Internal Gate Resistor − 5 −  td(on) Turn−On Delay Time – 95 – ns – 15.42 – Turn−Off Delay Time – 267 – tr td(off) tf Rise Time Tj = 25C VCE = 600 V, IC = 50 A VGE = −9 V, +15 V, RG = 6  Fall time – 59 – Eon Turn on switching loss – 1030 – Eoff Turn off switching loss – 1200 – – 97 – – 18 – Turn−Off Delay Time – 314 – td(on) tr td(off) tf Turn−On Delay Time Rise Time Tj = 125C VCE = 600 V, IC = 50 A VGE = −9 V, +15 V, RG = 6  Fall time – 93 – Eon Turn on switching loss – 1260 – Eoff Turn off switching loss – 2140 – Cies Input capacitance – 6323 – Coes Output capacitance – 241 – Cres Reverse transfer capacitance – 34 – Qg VCE =20 V, VGE = 0 V, f = 1 MHz J ns J pF Gate Charge VCE = 600 V, VGE = −15/+15 V, IC = 75 A – 340 – nC RthJH Thermal Resistance − chip−to−heatsink – 0.66 – K/W RthJC Thermal Resistance − chip−to−case Thermal grease, Thickness = 2.1 Mil 2%  = 2.9 W/mK – 0.48 – K/W V IGBT INVERSE DIODE (D11, D21, D12, D22, D13, D23) AND BYPASS DIODE (D51, D61, D52, D62, D53, D63) VF RthJH Diode Forward Voltage Thermal Resistance − chip−to−heatsink IF = 30 A, TJ = 25C – 1.04 1.7 IF = 30 A, TJ = 150C – 0.94 – Thermal grease, Thickness = 2.1 Mil 2%  = 2.9 W/mK – 1.04 – K/W BOOST SILICON CARBIDE SCHOTTKY DIODE (D31, D41, D32, D42, D33, D43) IR Diode Reverse Leakage Current VR = 1200 V, TJ = 25C – − 600 A VF Diode Forward Voltage IF = 30 A, TJ = 25C – 1.42 1.7 V IF = 30 A, TJ = 150C − 1.85 − TJ = 25C VDS = 600 V, IC = 50 A VGE = −9 V, 15 V, RG = 1  – 15 – ns – 128 – nC trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Peak Reverse Recovery Current – 13 – A di/dt Peak Rate of Fall of Recovery Current – 4200 – A/s Reverse Recovery Energy – 16 – J Err www.onsemi.com 3 NXH300B100H4Q2F2, NXH300B100H4Q2F2SG−R ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) (continued) Symbol Parameter Test Condition Min Typ Max Unit – 19 – ns – 175 – nC BOOST SILICON CARBIDE SCHOTTKY DIODE (D31, D41, D32, D42, D33, D43) trr Reverse Recovery Time Qrr Reverse Recovery Charge TJ = 125C VDS = 600 V, IC = 50 A VGE = −9 V, 15 V, RG = 1  IRRM Peak Reverse Recovery Current – 17 – A di/dt Peak Rate of Fall of Recovery Current – 3153 – A/s – 18 – J – 0.85 – K/W – 0.73 – K/W − 22 − k − 1486 −  Err Reverse Recovery Energy RthJH Thermal Resistance − chip−to−heatsink RthJC Thermal Resistance − chip−to−case Thermal grease, Thickness = 2.1 Mil 2%  = 2.9 W/mK THERMISTOR CHARACTERISTICS R25 Nominal resistance R100 Nominal resistance R/R Deviation of R25 −5 − 5 % PD Power dissipation − 200 − mW Power dissipation constant − 2 − mW/K T = 100C B−value B (25/50), tolerance 3% − 3950 − K B−value B (25/100), tolerance 3% − 3998 − K Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 4 NXH300B100H4Q2F2, NXH300B100H4Q2F2SG−R TYPICAL CHARACTERISTICS − IGBT, INVERSE & BYPASS DIODE AND BOOST DIODE Figure 2. Typical Output Characteristics Figure 3. Typical Output Characteristics Figure 4. Transfer Characteristics Figure 5. Typical Saturation Voltage Characteristics Figure 6. Inverse Diode Forward Characteristics Figure 7. Boost Diode Forward Characteristics www.onsemi.com 5 NXH300B100H4Q2F2, NXH300B100H4Q2F2SG−R TYPICAL CHARACTERISTICS − IGBT, INVERSE & BYPASS DIODE AND BOOST DIODE (CONTINUED) Figure 8. Typical Turn On Loss vs. IC Figure 9. Typical Turn Off Loss vs. IC Figure 10. Typical Turn On Loss vs. Rg Figure 11. Typical Turn Off Loss vs. Rg Figure 12. Typical Reverse Recovery Energy Loss vs. IC Figure 13. Typical Reverse Recovery Energy Loss vs. Rg www.onsemi.com 6 NXH300B100H4Q2F2, NXH300B100H4Q2F2SG−R TYPICAL CHARACTERISTICS − IGBT, INVERSE & BYPASS DIODE AND BOOST DIODE (CONTINUED) Figure 14. Typical Turn−Off Switching Time vs. IC Figure 15. Typical Turn−On Switching Time vs. IC Figure 16. Typical Turn−Off Switching Time vs. Rg Figure 17. Typical Turn−On Switching Time vs. Rg Figure 18. Typical Reverse Recovery Time vs. Rg Figure 19. Typical Reverse Recovery Charge vs. Rg www.onsemi.com 7 NXH300B100H4Q2F2, NXH300B100H4Q2F2SG−R TYPICAL CHARACTERISTICS − IGBT, INVERSE & BYPASS DIODE AND BOOST DIODE (CONTINUED) Figure 20. Typical Reverse Recovery Peak Current vs. Rg Figure 21. Typical di/dt vs. Rg Figure 22. Typical Reverse Recovery Time vs. IC Figure 23. Typical Reverse Recovery Charge vs. IC Figure 24. Typical Reverse Recovery Current vs. IC Figure 25. FBSOA www.onsemi.com 8 NXH300B100H4Q2F2, NXH300B100H4Q2F2SG−R TYPICAL CHARACTERISTICS − IGBT, INVERSE & BYPASS DIODE AND BOOST DIODE (CONTINUED) Figure 26. RBSOA Figure 27. Capacitance Charge Figure 28. Gate Voltage vs. Gate Charge Figure 29. NTC Characteristics www.onsemi.com 9 NXH300B100H4Q2F2, NXH300B100H4Q2F2SG−R TYPICAL CHARACTERISTICS − IGBT, INVERSE & BYPASS DIODE AND BOOST DIODE (CONTINUED) Figure 30. Transient Thermal Impedance (IGBT) Figure 31. Transient Thermal Impedance (BOOST DIODE) Figure 32. Transient Thermal Impedance (INVERSE&BYPASS DIODE) www.onsemi.com 10 NXH300B100H4Q2F2, NXH300B100H4Q2F2SG−R ORDERING INFORMATION Orderable Part Number NXH300B100H4Q2F2PG PRESS FIT PINS NXH300B100H4Q2F2SG, NXH300B100H4Q2F2SG−R SOLDER PINS Marking Package Shipping NXH300B100H4Q2F2PG Q2BOOST − PIM53, 93x47 (PRESSFIT) (Pb−Free and Halide−Free Press Fit Pins) 12 Units / Blister Tray NXH300B100H4Q2F2SG, NXH300B100H4Q2F2SG−R Q2BOOST − PIM53, 93x47 (SOLDER PIN) (Pb−Free and Halide−Free Solder Pins) 12 Units / Blister Tray www.onsemi.com 11 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PIM53, 93x47 (PRESSFIT) CASE 180CB ISSUE O GENERIC MARKING DIAGRAM* XXXXXXXXXXXXXXXXXXXXXG ATYYWW DOCUMENT NUMBER: DESCRIPTION: 98AON20720H PIM53 93X47 (PRESS FIT) DATE 30 APR 2020 *This information is generic. Please refer to device data sheet for actual XXXXX = Specific Device Code part marking. Pb−Free indicator, “G” G = Pb−Free Package or microdot “ G”, may or may not be AT = Assembly & Test Site Code present. Some products may not YYWW= Year and Work Week Code follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PIM53, 93x47 (SOLDER PIN) CASE 180CC ISSUE O GENERIC MARKING DIAGRAM* XXXXXXXXXXXXXXXXXXXXXG ATYYWW DOCUMENT NUMBER: DESCRIPTION: 98AON20721H DATE 04 MAY 2020 *This information is generic. Please refer to device data sheet for actual XXXXX = Specific Device Code part marking. Pb−Free indicator, “G” G = Pb−Free Package or microdot “ G”, may or may not be AT = Assembly & Test Site Code present. Some products may not YYWW= Year and Work Week Code follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PIM53 93X47 (SOLDER PIN) PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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