DATA SHEET
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Si/SiC Hybrid Module –
EliteSiC, I-Type NPC 1000 V,
350 A IGBT, 1200 V,
100 A SiC Diode, Q2 Package
NXH350N100H4Q2F2P1G,
NXH350N100H4Q2F2S1G,
NXH350N100H4Q2F2S1G-R,
NXH350N100H4Q2F2P1G-R
PACKAGE PICTURE
Q2PACK INPC PRESS FIT PINS
CASE 180BH
This high−density, integrated power module combines
high−performance IGBTs with rugged anti−parallel diodes.
Features
•
•
•
•
•
•
Extremely Efficient Trench with Field Stop Technology
Low Switching Loss Reduces System Power Dissipation
Module Design Offers High Power Density
Low Inductive Layout
Low Package Height
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Q2PACK INPC SOLDER PINS
CASE 180BS
MARKING DIAGRAM
Typical Applications
• Solar Inverters
• Uninterruptable Power Supplies Systems
NXH350N100H4Q2F2P1G/S1G/S1G−R/P1G−R
ATYYWW
G
= Pb−Free Package
AT
= Assembly & Test Site Code
YYWW = Year and Work Week Code
PIN CONNECTIONS
See details pin connections on page 2 of this data sheet.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
Figure 1.
NXH350N100H4Q2F2P1G/S1G/S1G−R/P1G−R
Schematic Diagram
© Semiconductor Components Industries, LLC, 2020
March, 2023 − Rev. 5
1
Publication Order Number:
NXH350N100H4Q2F2P1G/D
NXH350N100H4Q2F2P1G, NXH350N100H4Q2F2S1G, NXH350N100H4Q2F2S1G−R,
NXH350N100H4Q2F2P1G−R
PIN CONNECTIONS
Figure 2. Pin Connections
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Collector-Emitter Voltage
VCES
1000
V
Gate-Emitter Voltage
Positive Transient Gate−Emitter Voltage (Tpulse = 5 ms, D < 0.10)
VGE
±20
30
V
IC
303
A
IC(Pulse)
909
A
Ptot
592
W
Minimum Operating Junction Temperature
TJMIN
−40
°C
Maximum Operating Junction Temperature
TJMAX
175
°C
Collector-Emitter Voltage
VCES
1000
V
Gate-Emitter Voltage
Positive Transient Gate−Emitter Voltage (Tpulse = 5 ms, D < 0.10)
VGE
±20
30
V
IC
298
A
IC(Pulse)
894
A
Maximum Power Dissipation (TJ = 175°C)
Ptot
731
W
Minimum Operating Junction Temperature
TJMIN
−40
°C
Maximum Operating Junction Temperature
TJMAX
175
°C
VRRM
1000
V
IF
133
A
Repetitive Peak Forward Current (TJ = 175°C)
IFRM
399
A
Maximum Power Dissipation (TJ = 175°C)
Ptot
276
W
Rating
OUTER IGBT (T1, T4)
Continuous Collector Current @ TC = 80°C
Pulsed Peak Collector Current @ TC = 80°C (TJ = 150°C)
Maximum Power Dissipation (TJ = 150°C)
INNER IGBT (T2, T3)
Continuous Collector Current @ TC = 80°C
Pulsed Peak Collector Current @ TC = 80°C (TJ = 150°C)
IGBT INVERSE DIODE (D1, D2, D3, D4)
Peak Repetitive Reverse Voltage
Continuous Forward Current @ TC = 80°C
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NXH350N100H4Q2F2P1G, NXH350N100H4Q2F2S1G, NXH350N100H4Q2F2S1G−R,
NXH350N100H4Q2F2P1G−R
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (continued)
Rating
Symbol
Value
Unit
Minimum Operating Junction Temperature
TJMIN
−40
°C
Maximum Operating Junction Temperature
TJMAX
175
°C
VRRM
1200
V
IF
98
A
Repetitive Peak Forward Current (TJ = 175°C)
IFRM
294
A
Maximum Power Dissipation (TJ = 175°C)
Ptot
239
W
Minimum Operating Junction Temperature
TJMIN
−40
°C
Maximum Operating Junction Temperature
TJMAX
175
°C
TVJOP
−40 to +150
°C
Tstg
−40 to +125
°C
Vis
4000
VRMS
12.7
mm
CTI
> 600
IGBT INVERSE DIODE (D1, D2, D3, D4)
NEUTRAL POINT DIODE (D5, D6)
Peak Repetitive Reverse Voltage
Continuous Forward Current @ TC = 80°C
THERMAL PROPERTIES
Operating Temperature under Switching Condition
Storage Temperature Range
INSULATION PROPERTIES
Isolation Test Voltage, t = 1 s, 50 Hz (Note 2)
Creepage Distance
Comparative Tracking Index
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS and/or APPLICATION INFORMATION for Safe Operating parameters.
2. 4000 VACRMS for 1 second duration is equivalent to 3333 VACRMS for 1 minute duration.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Test Conditions
Characteristic
Symbol
Min
Typ
Max
Unit
ICES
–
–
1000
mA
VCE(sat)
–
1.63
2.3
V
OUTER IGBT (T1, T4) CHARACTERISTICS
Collector-Emitter Cutoff Current
VGE = 0 V, VCE = 1000 V
Collector-Emitter Saturation Voltage
VGE = 15 V, IC = 375 A, TJ = 25°C
–
1.92
–
Gate-Emitter Threshold Voltage
VGE = 15 V, IC = 375 A, TJ = 150°C
VGE = VCE, IC = 375 mA
VGE(TH)
3.8
4.84
6.1
V
Gate Leakage Current
VGE = ±20 V, VCE = 0 V
IGES
–
–
±2000
nA
Turn-on Delay Time
TJ = 25°C
VCE = 600 V, IC = 150 A
VGE = −9 V, 15 V, RG = 6 W
td(on)
–
85
–
ns
tr
–
27
–
td(off)
–
319
–
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Loss per Pulse
Turn-off Switching Loss per Pulse
tf
–
52
–
Eon
–
2.5
–
Eoff
–
4.9
–
td(on)
–
80
–
tr
–
31
–
td(off)
–
355
–
tf
–
70
–
Turn-on Switching Loss per Pulse
Eon
–
3.1
–
Turn-off Switching Loss per Pulse
Eoff
–
7.3
–
Turn-on Delay Time
Rise Time
TJ = 125°C
VCE = 600 V, IC = 150 A
VGE = −9 V, 15 V, RG = 6 W
Turn-off Delay Time
Fall Time
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3
mJ
ns
mJ
NXH350N100H4Q2F2P1G, NXH350N100H4Q2F2S1G, NXH350N100H4Q2F2S1G−R,
NXH350N100H4Q2F2P1G−R
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) (continued)
Characteristic
Test Conditions
Symbol
Min
Typ
Max
Unit
Cies
–
24146
–
pF
Output Capacitance
Coes
–
1027
–
Reverse Transfer Capacitance
Cres
–
106
–
OUTER IGBT (T1, T4) CHARACTERISTICS
Input Capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Total Gate Charge
VCE = 600 V, IC = 375 A,
VGE = −15 V~15 V
Qg
–
1249
–
nC
Thermal Resistance −
Chip-to-Heatsink
Thermal grease,
Thickness = 2.1 Mil ±2%
l = 2.9 W/mK
RthJH
–
0.22
–
K/W
RthJC
–
0.12
–
K/W
VF
–
1.50
1.85
V
Thermal Resistance − Chip-to-Case
NEUTRAL POINT DIODE (D5, D6) CHARACTERISTICS
Diode Forward Voltage
IF = 100 A, TJ = 25°C
IF = 100 A, TJ = 150°C
Reverse Recovery Time
Reverse Recovery Charge
TJ = 25°C
VCE = 600 V, IC = 150 A
VGE = −8 V, 15 V, RG = 6 W
Peak Reverse Recovery Current
Reverse Recovery Energy
Reverse Recovery Time
Reverse Recovery Charge
TJ = 125°C
VCE = 600 V, IC = 150 A
VGE = −8 V, 15 V, RG = 6 W
Peak Reverse Recovery Current
Reverse Recovery Energy
Thermal Resistance −
Chip-to-Heatsink
Thermal Resistance − Chip-to-Case
Thermal grease,
Thickness = 2.1 Mil ±2%
l = 2.9 W/mK
–
2.07
–
trr
–
19
–
ns
Qrr
–
229
–
nC
IRRM
–
19
–
A
Err
–
164
–
mJ
trr
–
34
–
ns
Qrr
–
359
–
nC
IRRM
–
17
–
A
Err
–
211
–
mJ
RthJH
–
0.42
–
K/W
RthJC
–
0.29
–
K/W
ICES
–
–
500
mA
VCE(sat)
–
1.75
2.3
V
–
2.11
–
INNER IGBT (T2, T3) CHARACTERISTICS
Collector-Emitter Cutoff Current
VGE = 0 V, VCE = 1000 V
Collector-Emitter Saturation Voltage
VGE = 15 V, IC = 400 A, TJ = 25°C
VGE = 15 V, IC = 400 A, TJ = 150°C
Gate-Emitter Threshold Voltage
VGE = VCE, IC = 400 mA
VGE(TH)
4.1
5
6.1
V
Gate Leakage Current
VGE = ±20 V, VCE = 0 V
IGES
–
–
±2000
nA
Turn-on Delay Time
TJ = 25°C
VCE = 600 V, IC = 150 A
VGE = −9 V, 15 V, RG = 11 W
td(on)
–
70
–
ns
tr
–
31
–
td(off)
–
423
–
tf
–
74
–
Turn-on Switching Loss per Pulse
Eon
–
6.4
–
Turn-off Switching Loss per Pulse
Eoff
–
4.2
–
td(on)
–
66
–
tr
–
31
–
td(off)
–
509
–
tf
–
88
–
Turn-on Switching Loss per Pulse
Eon
–
9.7
–
Turn-off Switching Loss per Pulse
Eoff
–
8.2
–
Cies
–
26093
–
Output Capacitance
Coes
–
1012
–
Reverse Transfer Capacitance
Cres
–
104
–
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
TJ = 125°C
VCE = 600 V, IC = 150 A
VGE = −9 V, 15 V, RG = 11 W
Turn-off Delay Time
Fall Time
Input Capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
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mJ
ns
mJ
pF
NXH350N100H4Q2F2P1G, NXH350N100H4Q2F2S1G, NXH350N100H4Q2F2S1G−R,
NXH350N100H4Q2F2P1G−R
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) (continued)
Characteristic
Test Conditions
Symbol
Min
Typ
Max
Unit
Rgint
–
1.25
−
W
INNER IGBT (T2, T3) CHARACTERISTICS
Internal Gage Resistor
Total Gate Charge
VCE = 600 V, IC = 400 A,
VGE = −15 V~15 V
Qg
–
1304
–
nC
Thermal Resistance −
Chip-to-Heatsink
Thermal grease,
Thickness = 2.1 Mil ±2%
l = 2.9 W/mK
RthJH
–
0.24
–
K/W
RthJC
–
0.13
–
K/W
VF
–
2.06
2.6
V
Thermal Resistance − Chip-to-Case
IGBT INVERSE DIODE (D1, D2, D3, D4) CHARACTERISTICS
Diode Forward Voltage
IF = 150 A, TJ = 25°C
IF = 150 A, TJ = 150°C
TJ = 25°C
VCE = 600 V, IC = 150 A
VGE = −8 V, 15 V, RG = 6 W
Reverse Recovery Time
Reverse Recovery Charge
Peak Reverse Recovery Current
Reverse Recovery Energy
TJ = 125°C
VCE = 600 V, IC = 150 A
VGE = −8 V, 15 V, RG = 6 W
Reverse Recovery Time
Reverse Recovery Charge
Peak Reverse Recovery Current
Reverse Recovery Energy
Thermal grease,
Thickness = 2.1 Mil ±2%
l = 2.9 W/mK
Thermal Resistance −
Chip-to-Heatsink
Thermal Resistance − Chip-to-Case
–
1.77
–
trr
–
105
–
ns
Qrr
–
4179
–
nC
IRRM
–
97
–
A
Err
–
4665
–
mJ
trr
–
179
–
ns
Qrr
–
11900
–
nC
IRRM
–
133
–
A
Err
–
3783
–
mJ
RthJH
–
0.39
–
K/W
RthJC
–
0.25
–
K/W
THERMISTOR CHARACTERISTICS
Nominal Resistance
T = 25°C
R25
–
22
–
kW
Nominal Resistance
T = 100°C
R100
–
1486
–
kW
DR/R
−5
–
5
%
PD
–
200
–
mW
–
2
–
mW/K
Deviation of R25
Power Dissipation
Power Dissipation Constant
B-value
B(25/50), tolerance ±3%
–
3950
−
K
B-value
B(25/100), tolerance ±3%
–
3998
−
K
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Part Number
Marking
Package
Shipping
NXH350N100H4Q2F2P1G,
NXH350N100H4Q2F2P1G−R
PRESS FIT PINS
NXH350N100H4Q2F2P1G,
NXH350N100H4Q2F2P1G−R
Q2PACK
(Pb−Free/Halide−Free)
12 Units / Blister Tray
NXH350N100H4Q2F2S1G,
NXH350N100H4Q2F2S1G−R
SOLDER PINS
NXH350N100H4Q2F2S1G,
NXH350N100H4Q2F2S1G−R
Q2PACK
(Pb−Free/Halide−Free)
12 Units / Blister Tray
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NXH350N100H4Q2F2P1G, NXH350N100H4Q2F2S1G, NXH350N100H4Q2F2S1G−R,
NXH350N100H4Q2F2P1G−R
TYPICAL CHARACTERISTICS – OUTER IGBT, INNER IGBT
Figure 3. Typical Output Characteristics – Outer IGBT
Figure 4. Typical Output Characteristics – Outer IGBT
Figure 5. Typical Output Characteristics – Inner IGBT
Figure 6. Typical Output Characteristics – Inner IGBT
Figure 7. Transfer Characteristics – Outer IGBT
Figure 8. Transfer Characteristics – Inner IGBT
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NXH350N100H4Q2F2P1G, NXH350N100H4Q2F2S1G, NXH350N100H4Q2F2S1G−R,
NXH350N100H4Q2F2P1G−R
TYPICAL CHARACTERISTICS – OUTER IGBT, INNER IGBT, IGBT INVERSE DIODE AND
NEUTRAL POINT DIODE
Figure 9. Typical Saturation Voltage
Characteristics − Outer IGBT
Figure 10. Typical Saturation Voltage
Characteristics − Inner IGBT
Figure 11. Inverse Diode Forward Characteristics
Figure 12. Buck Diode Forward Characteristics
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NXH350N100H4Q2F2P1G, NXH350N100H4Q2F2S1G, NXH350N100H4Q2F2S1G−R,
NXH350N100H4Q2F2P1G−R
TYPICAL SWITCHING CHARACTERISTICS – OUTER IGBT
Figure 13. Typical Turn On Loss vs. IC
Figure 14. Typical Turn Off Loss vs. IC
Figure 15. Typical Turn On Loss vs. RG
Figure 16. Typical Turn Off Loss vs. RG
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NXH350N100H4Q2F2P1G, NXH350N100H4Q2F2S1G, NXH350N100H4Q2F2S1G−R,
NXH350N100H4Q2F2P1G−R
TYPICAL SWITCHING CHARACTERISTICS – OUTER IGBT (CONTINUED)
Figure 17. Typical Turn On Switching Time vs. IC
Figure 18. Typical Turn Off Switching Time vs. IC
Figure 19. Typical Turn On Switching Time vs. RG
Figure 20. Typical Turn Off Switching Time vs. RG
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9
NXH350N100H4Q2F2P1G, NXH350N100H4Q2F2S1G, NXH350N100H4Q2F2S1G−R,
NXH350N100H4Q2F2P1G−R
TYPICAL SWITCHING CHARACTERISTICS – INNER IGBT
Figure 21. Typical Turn On Loss vs. IC
Figure 22. Typical Turn Off Loss vs. IC
Figure 23. Typical Turn On Loss vs. RG
Figure 24. Typical Turn Off Loss vs. RG
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NXH350N100H4Q2F2P1G, NXH350N100H4Q2F2S1G, NXH350N100H4Q2F2S1G−R,
NXH350N100H4Q2F2P1G−R
TYPICAL SWITCHING CHARACTERISTICS – INNER IGBT (CONTINUED)
Figure 25. Typical Turn On Switching Time vs. IC
Figure 26. Typical Turn Off Switching Time vs. IC
Figure 27. Typical Turn On Switching Time vs. RG
Figure 28. Typical Turn Off Switching Time vs. RG
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NXH350N100H4Q2F2P1G, NXH350N100H4Q2F2S1G, NXH350N100H4Q2F2S1G−R,
NXH350N100H4Q2F2P1G−R
TYPICAL SWITCHING CHARACTERISTICS – INVERSE DIODE
Figure 29. Typical Reverse Recovery Energy
Loss vs. IC
Figure 30. Typical Reverse Recovery Energy
Loss vs. RG
Figure 31. Typical Reverse Recovery Time vs. RG
Figure 32. Typical Reverse Recovery Charge vs. RG
Figure 33. Typical Reverse Recovery Peak
Current vs. RG
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NXH350N100H4Q2F2P1G, NXH350N100H4Q2F2S1G, NXH350N100H4Q2F2S1G−R,
NXH350N100H4Q2F2P1G−R
TYPICAL SWITCHING CHARACTERISTICS – NEUTRAL POINT DIODE
Figure 34. Typical Reverse Recovery Energy
Loss vs. IC
Figure 35. Typical Reverse Recovery Energy
Loss vs. RG
Figure 36. Typical Reverse Recovery Time vs. RG
Figure 37. Typical Reverse Recovery Charge vs. RG
Figure 38. Typical Reverse Recovery Peak
Current vs. RG
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NXH350N100H4Q2F2P1G, NXH350N100H4Q2F2S1G, NXH350N100H4Q2F2S1G−R,
NXH350N100H4Q2F2P1G−R
TRANSIENT THERMAL IMPEDANCE
Figure 39. Transient Thermal Impedance – Outer IGBT
Figure 40. Transient Thermal Impedance – Inner IGBT
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NXH350N100H4Q2F2P1G, NXH350N100H4Q2F2S1G, NXH350N100H4Q2F2S1G−R,
NXH350N100H4Q2F2P1G−R
TRANSIENT THERMAL IMPEDANCE (CONTINUED)
Figure 41. Transient Thermal Impedance – Inverse Diode
Figure 42. Transient Thermal Impedance – Neutral Point Diode
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NXH350N100H4Q2F2P1G, NXH350N100H4Q2F2S1G, NXH350N100H4Q2F2S1G−R,
NXH350N100H4Q2F2P1G−R
SAFE OPERATING AREA
Figure 43. FBSOA – Outer IGBT
Figure 44. RBSOA – Outer IGBT
Figure 45. FBSOA – Inner IGBT
Figure 46. RBSOA – Inner IGBT
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NXH350N100H4Q2F2P1G, NXH350N100H4Q2F2S1G, NXH350N100H4Q2F2S1G−R,
NXH350N100H4Q2F2P1G−R
GATE CHARGE AND CAPACITANCE
15
12
9
9
6
6
3
3
0
−3
−6
0
−3
−6
−9
−9
−12
−12
−15
Vce = 600 V
12
Vge (V)
Vge (V)
15
Vce = 600 V
0
200
400
600
800
1000
1200
−15
1400
0
200
400
Charge (nC)
600
800
1000
1200
1400
Charge (nC)
Figure 47. Gate Voltage vs. Gate Charge – Outer IGBT
Figure 48. Gate Voltage vs. Gate Charge – Inner IGBT
Figure 49. Capacitance Charge – Outer IGBT
Figure 50. Capacitance Charge – Inner IGBT
TYPICAL CHARCTERISTICS – THERMISTOR
Figure 51. Thermistor Characteristics
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PIM42, 93.00x47.00x12.00
CASE 180BH
ISSUE A
DATE 11 OCT 2023
GENERIC
MARKING DIAGRAM*
XXXXXXXXXXXXXXXXXXXXXX
ATYYWW
FRONTSIDE MARKING
2D
CODE
BACKSIDE MARKING
XXXXX = Specific Device Code
AT
= Assembly & Test Site Code
YYWW = Year and Work Week Code
*This information is generic. Please refer to device data
sheet for actual part marking. Pb−Free indicator, “G” or
microdot “ G”, may or may not be present. Some products
may not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON09951H
PIM42 93.00x47.00x12.00
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PIM42, 93.00x47.00x12.00
CASE 180BS
ISSUE A
DATE 12 OCT 2023
GENERIC
MARKING DIAGRAM*
XXXXXXXXXXXXXXXXXXXXXX
ATYYWW
FRONTSIDE MARKING
2D
CODE
BACKSIDE MARKING
XXXXX = Specific Device Code
AT
= Assembly & Test Site Code
YYWW = Year and Work Week Code
*This information is generic. Please refer to device data
sheet for actual part marking. Pb−Free indicator, “G” or
microdot “ G”, may or may not be present. Some products
may not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON15232H
PIM42 93.00x47.00x12.00
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
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