Three Phase Inverter
Automotive Power MOSFET
Module
NXV08V110DB1
Features
•
•
•
•
•
•
•
•
•
Three−Phase Inverter Bridge for Variable Speed Motor Drive
RC Snubber for Low EMI
Current Sensing and Temperature Sensing
Electrically Isolated DBC Substrate for Low Thermal Resistance
Compact Design for Low Total Module Resistance
Module Serialization for Full Traceability
AEC Qualified − AQG324
PPAP Capable
This Device is Pb−free, RoHS and UL94−V0 Compliant
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Applications
• 24 V and 48 V Motor Control
• DC−DC Converter
19LD, APM, PDD STD
CASE MODCD
Benefits
• Enable Design of Small, Efficient and Reliable System for Reduced
MARKING DIAGRAM
Vehicle Fuel Consumption and CO2 Emission
• Simplified Vehicle Assembly
• Enable Low Thermal Resistance to Junction−to−Heat Sink by Direct
NXV08V110DB1
ZZZ ATYWW
NNNNNN
Mounting via Thermal Interface Material between Module Case and
Heat Sink
NXV08V110DB1
ZZZ
AT
Y
WW
NNN
= Specific Device Code
= Lot ID
= Assembly & Test Location
= Year
= Work Week
= Serial Number
ORDERING INFORMATION
See detailed ordering and shipping information on page 2
of this data sheet.
© Semiconductor Components Industries, LLC, 2016
October, 2019 − Rev. 0
1
Publication Order Number:
NXV08V110DB1/D
NXV08V110DB1
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Package
Pb−Free and
RoHS Compliant
Operating
Temperature Range
Packing Method
NXV08V110DB1
APM19−CBC
yes
−40 ∼ 125°C
Tube
Figure 1. Pin Configuration
PIN DESCRIPTION
Pin Number
Pin Name
Pin Description
1
TEMP 1
NTC Thermistor Terminal 1
2
TEMP 2
NTC Thermistor Terminal 2
3
PHASE 3 SENSE
4
GATE 3
Gate of Q3, high side Phase 3 MOSFET
5
GATE 6
Gate of Q6, low side Phase 3 MOSFET
6
PHASE 2 SENSE
7
GATE 2
Gate of Q2, high side Phase 2 MOSFET
8
GATE 5
Gate of Q5, low side Phase 2 MOSFET
9
PHASE 1 SENSE
10
GATE 1
11
VBAT SENSE
12
GATE 4
13
SHUNT P
Positive CSR sense pin and source connection for low side MOSFETs
14
SHUNT N
Negative CSR sense pin and sense pin for battery return
15
VBAT
Battery voltage power lead
16
GND
Battery return power lead
17
PHASE 1
Phase 1 power lead
18
PHASE 2
Phase 2 power lead
19
PHASE 3
Phase 3 power lead
Source of Q3 and Drain of Q6
Source of Q2 and Drain of Q5
Source of Q1 and Drain of Q4
Gate of Q2, high side Phase 1 MOSFET
Sense pin for battery voltage and Drain of high side MOSFETs
Gate of Q4, low side Phase 1 MOSFET
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2
NXV08V110DB1
Schematic Diagram
VBAT SENSE
VBAT
GATE 3
GATE 2
Q1
Q3
Q2
GATE 1
PHASE 1 SENSE
PHASE 1
PHASE 2 SENSE
PHASE 2
PHASE 3 SENSE
PHASE 3
Q4
Q6
Q5
R
GATE 4
GATE 5
C
GATE 6
SHUNT P
TEMP 1
TEMP 2
CSR
NTC
SHUNT N
GND
Figure 2. Schematic
Flammability Information
Solder
All materials present in the power module meet UL
flammability rating class 94V−0.
Solder used is a lead free SnAgCu alloy.
Base of the leads, at the interface with the package body
should not be exposed to more than 200°C during mounting
on the PCB, this to prevent the remelt of the solder joints.
Compliance to RoHS Directives
The power module is 100% lead free and RoHS compliant
2000/53/C directive.
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Max.
Unit
VDS(Q1∼Q6)
Drain to Source Voltage
Parameter
80
V
VGS(Q1∼Q6)
Gate to Source Voltage
±20
V
EAS(Q1∼Q6)
Single Pulse Avalanche Energy (Note 2)
324
mJ
Maximum Junction Temperature
175
°C
TSTG
Storage Temperature
125
°C
Tlead
Temperature at the base of the leads at the interface with the package body
during PCB mounting
200
°C
VISO
Isolation Voltage (60Hz, Sinusoidal, AC 1minute, Connection Pins to heat
sink plate)
2500
Vrms
Symbol
TJ
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Defined by design, not subject to production testing.
2. Starting TJ = 25°C, L = 0.08 mH, IAS = 90 A, VDD = 80 V during inductor charging and VDD = 0 V during time in avalanche.
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3
NXV08V110DB1
THERMAL CHARACTERISTICS
Symbol
Parameter
Thermal Resistance, Junction−to−Case (Note 3)
RqJC
Min.
Typ.
Max.
Unit
−
−
0.9
K/W
3. Test method compliant with MIL−STD−883−1012.1, case temperature measured below the package at the chip center. Cosmetic oxidation
and discolor on the DBC surface is allowed.
MODULE SPECIFIC CHARACTERISTICS
Parameters
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Drain−to−Source Breakdown Voltage
ID = 250 mA, VGS = 0 V
BVDSS
80
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 mA
VGS(th)
2
4
V
Gate−to−Source Leakage Current
VGS = ±20 V, VDS = 0 V
IGSS
−100
+100
nA
Drain−to−Source Leakage Current
VDS = 80 V, VGS = 0 V
IDSS
2
uA
Source−to−Drain Diode Voltage
ISD = 80 A, VGS = 0 V
VSD
1.25
V
Q1 Inverter High Side MOSFETs (See Note 4)
ID = 80 A, VGS = 10 V
(Note 4)
RDS(ON)Q1
1.3
1.7
mW
RDS(ON)Q2
1.4
1.8
mW
Q3 Inverter High Side MOSFETs (See Note 4)
RDS(ON)Q3
1.5
1.9
mW
Q4 Inverter Low Side MOSFETs (See Note 4)
RDS(ON)Q4
1.6
1.9
mW
Q5 Inverter Low Side MOSFETs (See Note 4)
RDS(ON)Q5
1.7
2.1
mW
RDS(ON)Q6
2.0
2.4
mW
RDS(ON)MQ1
2.2
2.6
mW
VBAT to PHASE 2
RDS(ON)MQ2
2.3
2.6
mW
VBAT to PHASE 3
RDS(ON)MQ3
2.4
2.6
mW
PHASE1 to GND
RDS(ON)MQ4
2.4
3.0
mW
PHASE2 to GND
RDS(ON)MQ5
2.6
3.0
mW
RDS(ON)MQ6
2.9
3.2
mW
4.9
7.3
mW
Q2 Inverter High Side MOSFETs (See Note 4)
Q6 Inverter Low Side MOSFETs (See Note 4)
VBAT to PHASE 1
ID = 80 A, VGS = 10 V
PHASE3 to GND
Total loop resistance B+ ≥ Phase ≥ GND
VGS = 10 V, ID = 80 A
V
4. All MOSFETs have same size and on resistance. However, the different values listed due to the different access points available inside the
module for on resistance measurement. Q1 has the shortest measurement path in the layout, in this reason, on resistance of Q1 can be used
for simple power loss calculation.
COMPONENTS
Symbol
Spec
Quantity
Size
RESISTOR
1.0 W
1
142 × 55 mil
CAPACITOR
100 V, 0.022 uF
1
79 × 49 mil
CURRENT SENSING
RESISTOR
0.5 mW
1
250 × 120 mil
NTC
NCP18XH103F0SRB, 10 kW
1
63 × 32 mil
ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted, Reference typical characteristics of FDBL86363−F085, TOLL)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VDS = 40 V, VGS = 0 V, f = 1 MHz
−
10000
−
pF
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
−
1540
−
pF
Crss
Reverse Transfer Capacitance
−
70
−
pF
f = 1 MHz
−
2.8
−
W
Total Gate Charge at 10 V
VGS = 0 to 10 V
−
130
169
nC
Threshold Gate Charge
VGS = 0 to 2 V
−
18
27
nC
−
47
−
nC
−
24
−
nC
Rg
Qg(ToT)
Qg(th)
Gate Resistance
Qgs
Gate−to−Source Gate Charge
Qgd
Gate−to−Drain “Miller” Charge
VDD = 40 V, ID = 80 A
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4
NXV08V110DB1
ELECTRICAL CHARACTERISTICS (continued)
(TJ = 25°C unless otherwise noted, Reference typical characteristics of FDBL86363−F085, TOLL)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
−
−
133
ns
−
39
−
ns
Rise Time
−
63
−
ns
Turn−Off Delay
−
61
−
ns
Fall Time
−
33
−
ns
Turn−Off Time
−
−
140
ns
SWITCHING CHARACTERISTICS
ton
Turn−On Time
td(on)
Turn−On Delay
tr
td(off)
tf
toff
VDD = 40 V, ID = 80 A,
VGS = 10 V, RGEN = 6 W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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5
NXV08V110DB1
TYPICAL CHARACTERISTICS
(Graphs are generated using the die assembled in discrete package for reference purposes only. Datasheet of FDBL86363−F085 is
available in the web)
NOTE:
Refer to ON Semiconductor Application
Notes AN7514 and AN7515.
Figure 3. Unclamped Inductive Switching
Capability
Figure 4. Saturation Characteristics
Figure 5. Saturation Characteristics
Figure 6. RDSON vs. Gate Voltage
Figure 7. Normalized RDSON vs. Junction
Temperature
Figure 8. Normalized Gate Threshold Voltage
vs. Temperature
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6
NXV08V110DB1
TYPICAL CHARACTERISTICS (continued)
(Graphs are generated using the die assembled in discrete package for reference purposes only. Datasheet of FDBL86363−F085 is
available in the web)
Figure 9. Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
Figure 10. Capacitance vs. Drain to Source
Voltage
Figure 11. Gate Charge vs. Gate to Source
Voltage
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7
NXV08V110DB1
Figure 12. Flatness Measurement Position
MECHANICAL CHARACTERISTICS AND RATINGS
Parameter
Test Conditions
Device Flatness
Refer to the package dimensions
Mounting Torque
Mounting screw: M3, recommended 0.7 N•m
Weight
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8
Min.
Typ.
Max.
Units
0
−
150
um
0.4
−
0.8
N•m
−
20
−
g
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
19LD, APM, PDD STD (APM19−CBC)
CASE MODCD
ISSUE O
DOCUMENT NUMBER:
DESCRIPTION:
98AON13505G
DATE 30 NOV 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
19LD, APM, PDD STD (APM19−CBC)
PAGE 1 OF 1
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