Ordering number : ENA2294A
PCP1403
N-Channel Power MOSFET
60V, 4.5A, 117mΩ, Single PCP
http://onsemi.com
Features
• On-resistance RDS(on)1=92mΩ(typ.)
• 4V drive
• Protection Diode in
• Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Conditions
Value
Unit
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
4.5
A
Drain Current (Pulse)
IDP
Power Dissipation
PD
Junction Temperature
Tj
Storage Temperature
Tstg
PW≤10μs, duty cycle≤1%
18
A
Tc=25°C
3.5
W
When mounted on ceramic substrate (600mm2×0.8mm)
1.3
W
150
°C
- 55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Thermal Resistance Ratings
Parameter
Symbol
Junction to Case Steady State
Junction to Ambient
When mounted on ceramic substrate (600mm2×0.8mm)
Value
Unit
RθJC
35.7
°C /W
RθJA
96.1
°C /W
Electrical Characteristics at Ta = 25°C
Value
Parameter
Symbol
Conditions
Unit
min
typ
Drain to Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
Zero-Gate Voltage Drain Current
IDSS
VDS=60V, VGS=0V
Gate to Source Leakage Current
IGSS
VGS=±16V, VDS=0V
Gate Threshold Voltage
VGS(th)
VDS=10V, ID=1mA
Forward Transconductance
gFS
VDS=10V, ID=2A
2.5
RDS(on)1
ID=2A, VGS=10V
Static Drain to Source On-State Resistance
RDS(on)2
ID=1A, VGS=4.5V
RDS(on)3
ID=1A, VGS=4V
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
max
60
V
1
μA
±10
μA
2.6
V
92
117
mΩ
120
168
mΩ
132
185
mΩ
1.2
S
310
pF
40
pF
25
pF
Continued on next page.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
May, 2014
52014 TKIM TC-00003103/22514 TKIM No. A2294-1/5
PCP1403
Continued from preceding page.
Value
Parameter
Symbol
Conditions
Unit
min
typ
max
Turn-ON Delay Time
td(on)
5.6
ns
Rise Time
tr
7.0
ns
Turn-OFF Delay Time
td(off)
26
ns
Fall Time
tf
14
ns
Total Gate Charge
Qg
6.7
nC
Gate to Source Charge
Qgs
1.0
nC
Gate to Drain “Miller” Charge
Qgd
1.6
nC
Forward Diode Voltage
VSD
See specified Test Circuit
VDS=30V, VGS=10V, ID=4.5A
IS=4.5A, VGS=0V
0.88
1.2
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Package
Shipping
note
PCP1403-TD-H
PCP, SC-62
SOT-89, TO-243
1,000
pcs. / reel
Pb-Free
and
Halogen Free
Marking
LOT No.
Packing Type:TD
Device
QT
Ordering & Package Information
TD(PCP)
Electrical Connection
Switching Time Test Circuit
2
1
3
No.A2294-2/5
PCP1403
No.A2294-3/5
Allowable Power Dissipation, PD -- W
PCP1403
No.A2294-4/5
PCP1403
Package Dimensions
PCP1403-TD-H
SOT-89/PCP-1
CASE 419AU
ISSUE O
Unit : mm
1: Gate
2: Drain
3: Source
Recommended Soldering
Footprint
0.9
2.2
3.7
45°
45°
1.0
1.8
1.5
1.0
1.5
3.0
Note on usage : Since the PCP1403 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
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PS No.A2294-5/5