PZT3904T1
Preferred Device
General Purpose Transistor
NPN Silicon
Features
• Pb−Free Package is Available
http://onsemi.com
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
40
Vdc
Collector −Base Voltage
VCBO
60
Vdc
Emitter −Base Voltage
VEBO
6.0
Vdc
IC
200
mAdc
Symbol
Max
Unit
PD
1.5
12
W
mW/°C
Thermal Resistance Junction−to−Ambient
(Note 1)
RqJA
83.3
°C/W
Thermal Resistance Junction−to−Lead #4
RqJA
35
°C/W
Junction and Storage Temperature Range
TJ, Tstg
−55 to
+150
°C
Collector Current − Continuous
COLLECTOR
2, 4
1
BASE
3
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation (Note 1)
TA = 25°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 with 1 oz and 713 mm2 of copper area.
MARKING
DIAGRAM
AYW
1AM G
G
SOT−223
CASE 318E
STYLE 1
1
1AM
= Specific Device Code
A
= Assembly Location
Y
= Year
W
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Package
Shipping†
PZT3904T1
SOT−223
1000 / Tape & Reel
PZT3904T1G
SOT−223
(Pb−Free)
1000 / Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 2
1
Publication Order Number:
PZT3904T1/D
PZT3904T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector −Emitter Breakdown Voltage (Note 3)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
−
Vdc
Collector −Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO
60
−
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
6.0
−
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
IBL
−
50
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
ICEX
−
50
40
70
100
60
30
−
−
300
−
−
−
−
0.2
0.3
0.65
−
0.85
0.95
fT
300
−
MHz
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Cobo
−
5.0
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
−
8.0
Input Impedance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
hie
1.0
10
kW
Voltage Feedback Ratio
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
hre
0.5
8.0
X 10− 4
Small −Signal Current Gain
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
hfe
100
400
−
Output Admittance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
hoe
1.0
40
mMhos
Noise Figure
(VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 kW, f = 1.0 kHz)
nF
−
5.0
dB
(VCC = 3.0 Vdc, VBE = − 0.5 Vdc,
IC = 10 mAdc, IB1 = 1.0 mAdc)
td
−
35
ns
tr
−
35
(VCC = 3.0 Vdc,
IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc)
ts
−
200
tf
−
50
OFF CHARACTERISTICS (Note 2)
nAdc
ON CHARACTERISTICS (Note 3)
HFE
DC Current Gain (Note 2)
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
Collector −Emitter Saturation Voltage (Note 3)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat)
Base −Emitter Saturation Voltage (Note 3)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VBE(sat)
−
Vdc
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
2. FR−5 = 1.0 0.75 0.062 in.
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
http://onsemi.com
2
PZT3904T1
DUTY CYCLE = 2%
300 ns
+3 V
+10.9 V
10 < t1 < 500 ms
275
t1
DUTY CYCLE = 2%
10 k
+3 V
+10.9 V
275
10 k
0
−0.5 V
CS < 4 pF*
< 1 ns
1N916
−9.1 V′
< 1 ns
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
http://onsemi.com
3
CS < 4 pF*
PZT3904T1
TYPICAL TRANSIENT CHARACTERISTICS
TJ = 25°C
TJ = 125°C
10
5000
7.0
2000
5.0
Q, CHARGE (pC)
CAPACITANCE (pF)
VCC = 40 V
IC/IB = 10
3000
Cibo
3.0
Cobo
2.0
1000
700
500
QT
300
200
QA
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
100
70
50
20 30 40
1.0
2.0 3.0
REVERSE BIAS VOLTAGE (VOLTS)
Figure 3. Capacitance
IC/IB = 10
50 70 100
200
t r, RISE TIME (ns)
tr @ VCC = 3.0 V
50
30
20
40 V
15 V
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
50
30
20
7
5
200
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn −On Time
Figure 6. Rise Time
500
IC/IB = 20
100
70
10
2.0 V
td @ VOB = 0 V
VCC = 40 V
IC/IB = 10
300
200
IC/IB = 10
200
500
t′s = ts − 1/8 tf
IB1 = IB2
VCC = 40 V
IB1 = IB2
300
200
IC/IB = 20
t f , FALL TIME (ns)
TIME (ns)
100
70
10
t s′ , STORAGE TIME (ns)
30
500
300
200
300
200
20
Figure 4. Charge Data
500
7
5
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
100
70
IC/IB = 20
50
IC/IB = 10
30
20
100
70
50
10
10
7
5
7
5
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
IC/IB = 10
30
20
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 7. Storage Time
Figure 8. Fall Time
http://onsemi.com
4
200
PZT3904T1
TYPICAL AUDIO SMALL− SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
12
f = 1.0 kHz
SOURCE RESISTANCE = 200 W
IC = 0.5 mA
8
6
SOURCE RESISTANCE = 1.0 k
IC = 50 mA
4
SOURCE RESISTANCE = 500 W
IC = 100 mA
2
0
0.1
0.2
0.4
1.0
2.0
IC = 1.0 mA
12
NF, NOISE FIGURE (dB)
10
NF, NOISE FIGURE (dB)
14
SOURCE RESISTANCE = 200 W
IC = 1.0 mA
IC = 0.5 mA
10
IC = 50 mA
8
IC = 100 mA
6
4
2
4.0
10
20
40
0
100
0.1
0.2
0.4
20
40
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0
10
5.0
10
1.0
2.0
4.0
10
f, FREQUENCY (kHz)
RS, SOURCE RESISTANCE (k W)
Figure 9.
Figure 10.
100
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)
100
hoe, OUTPUT ADMITTANCE (m mhos)
h fe , CURRENT GAIN
300
200
100
70
50
30
0.1
0.2
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0
50
20
10
5
2
1
10
0.1
0.2
Figure 11. Current Gain
Figure 12. Output Admittance
h re , VOLTAGE FEEDBACK RATIO (X 10 −4 )
h ie , INPUT IMPEDANCE (k OHMS)
20
10
5.0
2.0
1.0
0.5
0.2
0.1
0.2
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
10
0.1
Figure 13. Input Impedance
0.2
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
Figure 14. Voltage Feedback Ratio
http://onsemi.com
5
PZT3904T1
h FE, DC CURRENT GAIN (NORMALIZED)
TYPICAL STATIC CHARACTERISTICS
2.0
TJ = +125°C
VCE = 1.0 V
+25°C
1.0
0.7
−55 °C
0.5
0.3
0.2
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
IC, COLLECTOR CURRENT (mA)
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
Figure 15. DC Current Gain
1.0
TJ = 25°C
0.8
IC = 1.0 mA
10 mA
30 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.2
0.1
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
IB, BASE CURRENT (mA)
Figure 16. Collector Saturation Region
1.0
1.2
TJ = 25°C
VBE(sat) @ IC/IB =10
0.8
VBE @ VCE =1.0 V
0.6
0.4
VCE(sat) @ IC/IB =10
qVC FOR VCE(sat)
0
−55 °C TO +25°C
−0.5
−55 °C TO +25°C
−1.0
+25°C TO +125°C
qVB FOR VBE(sat)
−1.5
0.2
0
+25°C TO +125°C
0.5
COEFFICIENT (mV/ °C)
V, VOLTAGE (VOLTS)
1.0
1.0
2.0
5.0
10
20
50
100
−2.0
200
0
20
40
60
80
100
120
140
160
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 17. “ON” Voltages
Figure 18. Temperature Coefficients
http://onsemi.com
6
180 200
PZT3904T1
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE L
D
b1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
4
HE
1
2
E
3
b
e1
e
C
q
A
0.08 (0003)
DIM
A
A1
b
b1
c
D
E
e
e1
L1
HE
A1
q
STYLE 1:
PIN 1.
2.
3.
4.
L1
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
1.50
6.70
0°
MILLIMETERS
NOM
MAX
1.63
1.75
0.06
0.10
0.75
0.89
3.06
3.20
0.29
0.35
6.50
6.70
3.50
3.70
2.30
2.40
0.94
1.05
1.75
2.00
7.00
7.30
10°
−
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.060
0.264
0°
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
0.069
0.276
−
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
0.078
0.287
10°
BASE
COLLECTOR
EMITTER
COLLECTOR
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
SCALE 6:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer
purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
http://onsemi.com
7
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
PZT3904T1/D