PZTA96ST1G

PZTA96ST1G High Voltage Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant MAXIMUM RATINGS Rating COLLECTOR 2,4 Symbol Value Unit Collector−Emitter Voltage VCEO −450 Vdc Collector−Base Voltage VCBO −450 Vdc Emitter−Base Voltage VEBO −5.0 Vdc Collector Current IC −500 mAdc Total Power Dissipation Up to TA = 25°C (Note 1) PD Storage Temperature Range Tstg −65 to +150 °C Junction Temperature TJ 150 °C BASE 1 EMITTER 3 W 1.5 4 1 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 in2. 2 3 SOT−223 (TO−261) CASE 318E STYLE 1 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient (Note 2) Symbol Max Unit AYW ZTA96G G °C RqJA 83.3 1 2. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 in2. A Y W G ELECTRICAL CHARACTERISTICS (Note 3) Characteristic Symbol Min Max −450 − −450 − Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0) V(BR)CEO Collector−Emitter Breakdown Voltage (IC = −100 mAdc, IE = 0) V(BR)CBO Emitter−Base Breakdown Voltage (IE = −10 mAdc, IC = 0) V(BR)EBO Collector−Base Cutoff Current (VCB = − 400 Vdc, IE = 0) ICBO Emitter−Base Cutoff Current (VBE = − 4.0 Vdc, IC = 0) IEBO Vdc Vdc Vdc −5.0 − − −0.1 − −0.1 50 150 − − −0.6 −1.0 mAdc mAdc = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† PZTA96ST1G SOT−223 (Pb−Free) 1000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ON CHARACTERISTICS DC Current Gain (Note 4) (IC = − 10 mAdc, VCE = − 10 Vdc) Saturation Voltages (IC = −20 mAdc, IB = −2.0 mAdc) (IC = −20 mAdc, IB = −2.0 mAdc) hFE − Vdc VCE(sat) VBE(sat) 3. TA = 25°C unless otherwise noted. 4. Pulse Test: Pulse Width ≤ 300 ms; Duty Cycle = 2.0%. © Semiconductor Components Industries, LLC, 2013 September, 2013 − Rev. 5 1 Publication Order Number: PZTA96ST1/D PZTA96ST1G TYPICAL CHARACTERISTICS 0.4 VCE(sat), COLL−EMIT SATURATION VOLTAGE (V) 1000 hFE, DC CURRENT GAIN VCE = 10 V 150°C 25°C 100 −55°C 10 IC/IB = 10 0.3 150°C 0 0.1 1 10 100 0.1 1000 1 10 100 1000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain Figure 2. Collector−Emitter Saturation Voltage 1.0 0.8 VBE(on), BASE−EMITTER ON VOLTAGE (V) 1.0 VBE(sat), BASE−EMIT SATURATION VOLTAGE (V) −55°C 0.1 1 −55°C 25°C 0.6 0.4 150°C 0.2 0.8 −55°C 25°C 0.6 0.4 150°C 0.2 IC/IB = 10 VCE = 10 V 0 0 0.1 1 10 0.1 100 IC, COLLECTOR CURRENT (mA) 1 10 100 IC, COLLECTOR CURRENT (mA) Figure 3. Base−Emitter Saturation Voltage Figure 4. Base−Emitter “On” Voltage 100 fT, CURRENT−GAIN−BANDWIDTH PRODUCT (MHz) 1000 C, CAPACITANCE (pF) 25°C 0.2 Cib 100 Cob 10 VCE = 2 V 10 1 1 0.1 1 10 100 0.1 1000 1 10 100 VR, REVERSE VOLTAGE (V) IC, COLLECTOR CURRENT (mA) Figure 5. Capacitances Figure 6. Current−Gain−Bandwidth Product http://onsemi.com 2 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE R DATE 02 OCT 2018 SCALE 1:1 q q DOCUMENT NUMBER: DESCRIPTION: 98ASB42680B SOT−223 (TO−261) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com SOT−223 (TO−261) CASE 318E−04 ISSUE R STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. ANODE CATHODE NC CATHODE STYLE 6: PIN 1. 2. 3. 4. RETURN INPUT OUTPUT INPUT STYLE 7: PIN 1. 2. 3. 4. ANODE 1 CATHODE ANODE 2 CATHODE STYLE 11: PIN 1. MT 1 2. MT 2 3. GATE 4. MT 2 STYLE 3: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 8: STYLE 12: PIN 1. INPUT 2. OUTPUT 3. NC 4. OUTPUT CANCELLED DATE 02 OCT 2018 STYLE 4: PIN 1. 2. 3. 4. SOURCE DRAIN GATE DRAIN STYLE 5: PIN 1. 2. 3. 4. STYLE 9: PIN 1. 2. 3. 4. INPUT GROUND LOGIC GROUND STYLE 10: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE DRAIN GATE SOURCE GATE STYLE 13: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR GENERIC MARKING DIAGRAM* AYW XXXXXG G 1 A = Assembly Location Y = Year W = Work Week XXXXX = Specific Device Code G = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98ASB42680B SOT−223 (TO−261) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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