QTLP660CIRTR

QTLP660CIR 1.8mm DOME LENS EMITTING DIODE QTLP660CIR PACKAGE DIMENSIONS 0.134 (3.40) 0.118 (3.00) Ø0.075 (1.9) Ø0.067 (1.7) 0.102 (2.6) 0.087 (2.2) 0.091 (2.3) 0.083 (2.1) TOP R0.004 (0.1) 5° 7° 0.024 (0.6) 0.016 (0.4) 0.106 (2.7) 0.098 (2.5) SIDE 0.028 (0.7) 0.020 (0.5) 0.079 (2.0) BOTTOM + POLARITY NOTE: Dimensions for all drawings are in inches (mm). FEATURES • • • • • • 1.8mm Dome Lens Package Available in 0.315” (8mm) width tape on 7” (178mm) diameter reel; 2,000 units per reel Narrow Emission Angle, 30° Wavelength = 940 nm, GaAs Water Clear Lens Matched Photosensor: QTLP660CPDF © 2003 Fairchild Semiconductor Corporation Page 1 of 7 3/5/03 QTLP660CIR 1.8mm DOME LENS EMITTING DIODE QTLP660CIR ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit TOPR -40 to +85 °C TSTG -40 to +90 °C Operating Temperature Storage Temperature (Iron)(1,2,3) TSOL-I 240 for 5 sec °C Soldering Temperature (Flow)(1,2) TSOL-F 260 for 10 sec °C Continuous Forward Current IF 65 mA Reverse Voltage VR 5 V PD 130 mW IFD 1.0 A Soldering Temperature Power Dissipation(4) Peak Forward Current (Pulse width = 100µs, Duty Cycle=1%) Notes: 1. RMA flux is recommended. 2. Methanol or isopropyl alcohols are recommended as cleaning agents. 3. Soldering iron tip at 1/16" (1.6mm) from housing 4. At 25°C or below ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C) PARAMETER TEST CONDITIONS SYMBOL MIN. TYP. MAX. UNITS Peak Emission Wavelength IF = 20 mA λP — 940 — nm Emission Angle IF = 20 mA Θ — ±15 — Deg. — 1.2 1.5 — 1.4 1.85 — 2.6 4.0 — — 100 1.0 3.0 — — 14 — — 140 — IF = 20 mA Forward Voltage IF = 100 mA, tP = 100 µs, Duty Cycle = 0.01 VF IF = 1 A, tP = 100 µs, Duty Cycle = 0.01 Reverse Current VR = 5 V IR IF = 20 mA Radiant Intensity IF = 100 mA, tP = 100 µs, Duty Cycle = 0.01 Ee IF = 1 A, tP = 100 µs, Duty Cycle = 0.01 V µA mW/sr Rise Time IF = 100 mA, tr — 1 — µs Fall Time tP = 20 ms tf — 1 — µs © 2003 Fairchild Semiconductor Corporation Page 2 of 7 3/5/03 QTLP660CIR 1.8mm DOME LENS EMITTING DIODE QTLP660CIR TYPICAL PERFORMANCE CURVES Fig. 2 Relative Radiant Intensity vs. Wavelength Fig. 1 Forward Current vs. Ambient Temperature 100 IF = 20 mA TA = 25˚C Relative Radiant Intensity (%) Forward Current IF (mA) 140 120 100 80 60 40 20 0 -25 0 20 40 60 80 80 60 40 20 100 0 880 900 920 940 960 980 1000 1020 1040 Ambient Temperature (°C) Wavelengthl λ (nm) Fig. 4 Forward Current vs. Forward Voltage 104 980 Forward Current IF (mA) Peak Emission Wavelength (nm) Fig. 3 Peak Emission Wavelength vs. Ambient Temperature 960 940 920 900 -25 0 25 50 75 tp=100µs Duty Cycle=0.01 3 10 102 100 Ambient Temperature TA (°C) 101 0 1 3 4 Forward Voltage (V) Fig. 5 Relative Intensity vs. Ambient Temperature (°C) 5 Fig. 6 Relative Radiant Intensity vs. Angular Displacement 30° 3 Relative Radiant Intensity Ie - Radiant Intensity (mW/sr) 2 IF=20mA 1 0.1 25 50 75 © 2003 Fairchild Semiconductor Corporation 100 Page 3 of 7 10° 0° 10° 20° 30° 1.0 40° 0.9 50° 0.8 60° 0.7 70° 80° 0.6 120 20° 0.4 0.2 0 0.2 0.4 0.6 3/5/03 QTLP660CIR 1.8mm DOME LENS EMITTING DIODE QTLP660CIR TYPICAL PERFORMANCE CURVES Fig. 7 Relative Intensity vs. Forward Current Ie–Radiant Intensity (mW/sr) 1000 100 10 1 100 101 102 103 104 IF – Forward Current (mA) © 2003 Fairchild Semiconductor Corporation Page 4 of 7 3/5/03 QTLP660CIR 1.8mm DOME LENS EMITTING DIODE QTLP660CIR RECOMMENDED PRINTED CIRCUIT BOARD PATTERN 0.079 (2.00) 0.098 (2.50) 0.098 (2.50) 0.098 (2.50) RECOMMENDED IR REFLOW SOLDERING PROFILE 5 sec MAX soldering time 240° C MAX +5° C/s MAX -5° C/s MAX 60 - 120 sec Preheating 120 - 150° C MAX © 2003 Fairchild Semiconductor Corporation Page 5 of 7 3/5/03 QTLP660CIR 1.8mm DOME LENS EMITTING DIODE QTLP660CIR TAPE AND REEL DIMENSIONS 13.2±1.5 2.5±0.5 Ø178.0±1.0 Ø60.2±0.5 2.5±0.5 16.0±0.2 Ø13.0±0.5 2.0±0.05 4.0 1.55±0.05 4.0 Polarity 2.6 3.4±0.1 5.5 0.230±0.1 12.0 1.75 Progressive direction 2.75 Dimensional tolerance is ± 0.1mm unless otherwise specified Angle: ± 0.5 Unit: mm © 2003 Fairchild Semiconductor Corporation Page 6 of 7 3/5/03 QTLP660CIR 1.8mm DOME LENS EMITTING DIODE QTLP660CIR DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. © 2003 Fairchild Semiconductor Corporation 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Page 7 of 7 3/5/03