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S1A - S1M
General-Purpose Rectifiers
Features
Description
• 1 AIF(AV) Current Rating
• Glass Passivated
• Low Leakage:
- 1 μA Maximum at 25°C
- 50 μA Maximum at 125°C
• Fast Response: 1.8 μs (Typical)
• 30 A Surge Rating
• 50 to 1000 V Reverse Voltage Ratings
• 6.6 pF Typical Capacitance
• RoHS Compliant
• UL Certified, UL #E258596
In the world of commodity rectifiers, Fairchild Semiconductor’s S1 family of 1 A, P-I-N, SMA rectifiers stand out
for their optimized low leakage, low capacitance, and
fast response time. This was achieved while maintaining
the industry standard VF max of 1.1 V at 1 A and a 30 A
surge rating. In today’s world, where system power efficiency is a critical differentiating feature, these advantages can be leveraged to support those higher
efficiency goals.
SMA/DO-214AC
COLOR BAND DENOTES CATHODE
Ordering Information
Part Number
Marking
Package
Packing Method
S1A
S1A
DO-214AC (SMA)
Tape and Reel
S1B
S1B
DO-214AC (SMA)
Tape and Reel
S1D
S1D
DO-214AC (SMA)
Tape and Reel
S1G
S1G
DO-214AC (SMA)
Tape and Reel
S1J
S1J
DO-214AC (SMA)
Tape and Reel
S1K
S1K
DO-214AC (SMA)
Tape and Reel
S1M
S1M
DO-214AC (SMA)
Tape and Reel
© 2001 Fairchild Semiconductor Corporation
S1A - S1M Rev. 2.10
www.fairchildsemi.com
S1A - S1M — General-Purpose Rectifiers
May 2015
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Value
Parameter
S1A
S1B
S1D S1G
S1J
S1K S1M
50
100
200
600
800
VRRM
Maximum Repetitive Reverse Voltage
IF(AV)
Average Rectified Forward Current at
TA = 100°C
1.0
A
IFSM
Non-Repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
30
A
TSTG
Storage Temperature Range
-55 to +150
°C
Operating Junction Temperature
-55 to +150
°C
TJ
400
Unit
1000
V
Note:
1. These ratings are limiting values above which the serviceability of any semiconductor device maybe impaired.
Thermal Characteristics
Symbol
PD
RθJA
RθJA
Ψjl
Parameter
Max.
Unit
1.4
W
(2)
85
°C/W
(3)
Thermal Resistance, Junction to Ambient
170
°C/W
Junction-Lead thermal characteristics(3)
25
°C/W
Power Dissipation
Thermal Resistance, Junction to Ambient
Notes:
2. Device mounted on FR-4 PCB, land pattern size: 25 mm² (5 x 5 mm).
3. Device mounted on FR-4 PCB, land pattern size: 4.6375 mm² (2.65 x 1.75 mm).
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
VF
Forward Voltage
IF = 1.0 A
trr
Reverse Recovery Time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
IR
Reverse Current at Rated VR
CT
Junction Capacitance
© 2001 Fairchild Semiconductor Corporation
S1A - S1M Rev. 2.10
Min.
Typ.
Max.
Unit
1.1
V
μs
1.8
TA = 25°C
1.0
TA =125°C
50
VR = 4.0 V, f = 1.0MHz
6.6
μA
pF
www.fairchildsemi.com
2
S1A - S1M — General-Purpose Rectifiers
Absolute Maximum Ratings(1)
Forward Current, IF [A]
Average Rectified Forward Current, IF [A]
100
2
1
0
0
25
50
75
100
125
150
10
1
0.1
0.01
0.6
175
O
Lead Temperature, [ C]
1.6
1.8
100
25
10
8.3ms Single Half Sine-Wave
JEDEC Method
20
15
10
5
1
2
5
10
20
Number of Cycles at 60Hz
50
T J = 25ºC
0.01
Transient Thermal Impedance [ºC/W]
50
T J = 25 º C
f = 1.0 MHz
Vsig = 50mV p-p
10
5
100
Figure 5. Total Capacitance
© 2001 Fairchild Semiconductor Corporation
S1A - S1M Rev. 2.10
T J = 75ºC
0.1
0
20
40
60
80
100 120 140
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Reverse Current vs. Reverse Voltage
100
0.1
1
10
Reverse Voltage, VR [V]
1
0.001
100
Figure 3. Non-Repetitive Surge Current
1
0.01
T J = 125ºC
Reverse Current, IR [uA]
Peak Forward Surge Current, IFSM [A]
30
Total Capacitance, CT [pF]
1
1.2
1.4
Forward Voltage, VF [V]
Figure 2. Forward Voltage Characteristics
Figure 1. Forward Current Derating Curve
0
0.8
100
Units Mounted On
20"x 20"(5.4mm 2 )+0.5mil
50 inches(0.013mm)
Thick Copper Land Areas
10
5
1
0.01
0.1
1
10
Pulse Duration [s]
100
Figure 6. Thermal Impedance Characteristics
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3
S1A - S1M — General-Purpose Rectifiers
Typical Performance Characteristics
B
5.60
4.80
B
0.13
C B A
M
2.65
2.95
2.50
1.65
1.20
B
B
A
1.75
4.30
4.75
4.00
LAND PATTERN RECOMMENDATION
8°
0°
2.70 MAX
A
R0.15 4X
2.20
1.90
B
C
2.05
1.95
GAUGE
PLANE
0.30
0.05
0.203
0.050
0.13
C B A
M
0.45
0.41
0.15
0 -8°
1.52
0.75
DETAIL A
SCALE 20 : 1
NOTES:
A. EXCEPT WHERE NOTED CONFORMS TO
JEDEC DO214 VARIATION AC.
B DOES NOT COMPLY JEDEC STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
F. LAND PATTERN STD. DIOM5025X231M.
G. DRAWING FILE NAME: DO214ACREV1
Figure 7. 2-LEAD, SMA, JEDEC DO-214, VARIATION AC
© 2001 Fairchild Semiconductor Corporation
S1A - S1M Rev. 2.10
www.fairchildsemi.com
4
S1A - S1M — General-Purpose Rectifiers
Physical Dimensions
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system whose failure to perform can be reasonably expected to
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Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I74
© Fairchild Semiconductor Corporation
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ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
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