S1B

S1A THRU S1M SURFACE MOUNT GENERAL RECTIFIER Reverse Voltage – 50 to 1000 V Forward Current – 1 A Features • Plastic package has Underwriters Laboratories Flammability Classification 94V-0 • Glass passivated chip junction • For surface mount application • Low profile package • Built-in strain relief, ideal for automated placement Mechanical Data • Case: SMA (DO-214AC), molded plastic • Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 • Polarity: Color band denotes cathode end Absolute Maximum Ratings and Characteristics Ratings at 25O C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Parameter Symbols S1A S1B S1D S1G S1J S1K S1M Units Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current , 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC Method) Maximum Forward Voltage at 1 A Maximum DC Reverse Current at Rated DC Blocking Voltage Typical Junction Capacitance at VR = 4 V, f = 1 MHz Typical Thermal Resistance 1) Operating and Storage Temperature Range 1) VRRM VRMS VDC IF(AV) IFSM VF 50 35 50 100 70 100 200 140 200 400 280 400 1 30 1.1 5 50 12 75 27 600 420 600 800 560 800 1000 700 1000 V V V A A V μA pF O at TA = 25 OC at TA = 125 OC IR CJ RθJA RθJL TJ, TS C/W O - 55 to +1 50 C Thermal resistance from junction to ambient from junction to lead mounted on P.C.B. with 0.2 X 0.2" (5 X 5 mm) copper pad areas SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 14/04/2008 S1A THRU S1M FIG.1-FORWARD DERATING CURVE FIG.2- PEAK FORWARD SURGE CURRENT 100 AVERAGE FORWARD CURRENT, A PEAK FORWARD SURGE CURRENT, A 1.2 1 0.8 0.6 RESISTIVE OR INDUCTIVE LOAD TL =110 C 8.3ms Single half Sine Wave (JEDEC Method) S1(A.J) 10 S1(K.M) S1(A.J) 0.4 0.2 0 0 20 40 60 80 100 120 140 160 0.2x0.2(5.0x5.0mm) Thick copper pad areas S1(K.M) 1 1 10 NUMBER OF CYCLES AT 60Hz 100 LEAD TEMPERATURE, ( C) FIG.3-TYPICAL FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT(A) FIG.4-TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT( A) 100 100 10 10 TJ=125 C 1 o 1 TJ=75 C 0.1 TJ =25 C PULSE WIDTH=300 s 1% DUTY CYCLE 0.1 0.01 0.4 0.6 0.01 TJ =25 C 0.8 1.0 1.2 1.4 1.6 1.8 2.0 INSTANTANEOUS FORWARD VOLTAGE (V) 0.001 0 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTS,% FIG.5- TYPICAL JUNCTION CAPACITANCE TRANSIENT THERMAL IMPEDANCE ( oC/W) 100 JUNCTION CAPACITANCE, pF FIG.6- TRANSIENT THERMAL IMPEDANCE 1000 TJ=25 C f=1.0MHz Vsig=50mVp-p S1(K.M) 100 10 S1(A.J) 10 1 0.01 0.1 1 10 100 1 0.01 0.1 1 10 100 t, PULSE DURATION REVERSE VOLTAGE, V SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 14/04/2008