SMMBD770T1G

MMBD330T1G, SMMBD330T1G, MMBD770T1G, SMMBD770T1G Schottky Barrier Diodes http://onsemi.com Schottky barrier diodes are designed primarily for high−efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. They are housed in the SOT−323/SC−70 package which is designed for low−power surface mount applications. SC−70/SOT−323 CASE 419 Features        Extremely Low Minority Carrier Lifetime Very Low Capacitance Low Reverse Leakage Available in 8 mm Tape and Reel AEC Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS Rating Reverse Voltage MMBD330T1G, SMMBD330T1G MMBD770T1G, SMMBD770T1G Forward Continuous Current (DC) Nonrepetitive Peak Forward Current (Note 1) Symbol VR Value Unit Vdc 30 70 IF 200 mA IFSM 1.0 A PF mW Junction Temperature TJ −55 to +125 C Tstg −55 to +150 C 120 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. 60 Hz Halfsine. 3 MARKING DIAGRAMS XX M G G 1 XX 4T 5H M G = Specific Device Code = MMBD330T1 = MMBD770T1 = Date Code = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon the manufacturing location. ORDERING INFORMATION Package Shipping† MMBD330T1G SC−70 (Pb−Free) 3,000/Tape & Reel SMMBD330T1G SC−70 (Pb−Free) 3,000/Tape & Reel MMBD770T1G SC−70 (Pb−Free) 3,000/Tape & Reel SMMBD770T1G SC−70 (Pb−Free) 3,000/Tape & Reel Device Forward Power Dissipation TA = 25C Storage Temperature Range 1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.  Semiconductor Components Industries, LLC, 2011 November, 2011 − Rev. 6 1 Publication Order Number: MMBD330T1/D MMBD330T1G, SMMBD330T1G, MMBD770T1G, SMMBD770T1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Characteristic Reverse Breakdown Voltage (IR = 10 mA) MMBD330T1G, SMMBD330T1G MMBD770T1G, SMMBD770T1G V(BR)R Diode Capacitance (VR = 15 Volts, f = 1.0 MHZ) MMBD330T1G, SMMBD330T1G (VR = 20 Volts, f = 1.0 MHZ) MMBD770T1G, SMMBD770T1G CT Reverse Leakage (VR = 25 V) MMBD330T1G, SMMBD330T1G (VR = 35 V) MMBD770T1G, SMMBD770T1G IR Forward Voltage (IF = 1.0 mAdc) MMBD330T1G, SMMBD330T1G (IF = 10 mA) (IF = 1.0 mAdc) MMBD770T1G, SMMBD770T1G (IF = 10 mA) VF Min 2 Max Unit Volts 30 70 http://onsemi.com Typ − − − − pF − 0.9 1.5 − 0.5 1.0 nAdc − 13 200 − 9.0 200 Vdc − − 0.38 0.52 0.45 0.60 − − 0.42 0.70 0.50 1.0 MMBD330T1G, SMMBD330T1G, MMBD770T1G, SMMBD770T1G TYPICAL CHARACTERISTICS MMBD330T1G, SMMBD330T1G 2.8 500 t , MINORITY CARRIER LIFETIME (ps) CT, TOTAL CAPACITANCE (pF) MMBD330T1 f = 1.0 MHz 2.4 2.0 1.6 1.2 0.8 0.4 0 MMBD330T1 400 KRAKAUER METHOD 300 200 100 0 0 3.0 6.0 9.0 12 15 18 21 VR, REVERSE VOLTAGE (VOLTS) 24 27 30 0 Figure 1. Total Capacitance 30 50 70 40 60 IF, FORWARD CURRENT (mA) 20 80 90 100 Figure 2. Minority Carrier Lifetime 10 100 MMBD330T1 IF, FORWARD CURRENT (mA) MMBD330T1 IR, REVERSE LEAKAGE (m A) 10 TA = 100C 1.0 TA = 75C 0.1 TA = 85C 1.0 TA = 25C 0.01 TA = -40C 10 TA = 25C 0.1 0.001 0 6.0 12 18 VR, REVERSE VOLTAGE (VOLTS) 24 30 0.2 Figure 3. Reverse Leakage 0.4 0.6 0.8 VF, FORWARD VOLTAGE (VOLTS) Figure 4. Forward Voltage http://onsemi.com 3 1.0 1.2 MMBD330T1G, SMMBD330T1G, MMBD770T1G, SMMBD770T1G TYPICAL CHARACTERISTICS MMBD770T1G, SMMBD770T1G 2.0 500 t , MINORITY CARRIER LIFETIME (ps) CT, TOTAL CAPACITANCE (pF) MMBD770T1 f = 1.0 MHz 1.6 1.2 0.8 0.4 0 MMBD770T1 400 KRAKAUER METHOD 300 200 100 0 0 5.0 10 15 20 25 30 35 VR, REVERSE VOLTAGE (VOLTS) 40 45 50 0 10 Figure 5. Total Capacitance 40 60 30 50 70 IF, FORWARD CURRENT (mA) 80 90 100 Figure 6. Minority Carrier Lifetime 10 100 MMBD770T1 IF, FORWARD CURRENT (mA) MMBD770T1 IR, REVERSE LEAKAGE (m A) 20 TA = 100C 1.0 TA = 75C 0.1 10 TA = 85C TA = -40C 1.0 0.01 TA = 25C 0.001 TA = 25C 0.1 0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) 40 50 0.2 Figure 7. Reverse Leakage 0.4 0.8 1.2 VF, FORWARD VOLTAGE (VOLTS) Figure 8. Forward Voltage http://onsemi.com 4 1.6 2.0 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419 ISSUE R DATE 11 OCT 2022 SCALE 4:1 GENERIC MARKING DIAGRAM XX MG G 1 XX M G = Specific Device Code = Date Code = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. STYLE 1: CANCELLED STYLE 6: PIN 1. EMITTER 2. BASE 3. COLLECTOR DOCUMENT NUMBER: DESCRIPTION: STYLE 2: PIN 1. ANODE 2. N.C. 3. CATHODE STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 5: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 7: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 8: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 9: PIN 1. ANODE 2. CATHODE 3. CATHODE-ANODE STYLE 10: PIN 1. CATHODE 2. ANODE 3. ANODE-CATHODE 98ASB42819B SC−70 (SOT−323) STYLE 11: PIN 1. CATHODE 2. CATHODE 3. CATHODE Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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