MMBTA42L, SMMBTA42L,
MMBTA43L
High Voltage Transistors
NPN Silicon
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Features
• S Prefix for Automotive and Other Applications Requiring Unique
•
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
COLLECTOR
3
1
BASE
2
EMITTER
MAXIMUM RATINGS
Characteristic
Symbol
Collector −Emitter Voltage
MMBTA42, SMMBTA42
MMBTA43
VCEO
Collector −Base Voltage
MMBTA42, SMMBTA42
MMBTA43
VCBO
Emitter −Base Voltage
MMBTA42, SMMBTA42
MMBTA43
VEBO
Collector Current − Continuous
Value
Unit
3
Vdc
300
200
1
2
Vdc
300
200
SOT−23 (TO−236)
CASE 318
STYLE 6
Vdc
6.0
6.0
IC
500
mAdc
Symbol
Max
Unit
225
1.8
mW
mW/°C
556
°C/W
300
2.4
mW
mW/°C
RqJA
417
°C/W
TJ, Tstg
−55 to +150
°C
MARKING DIAGRAMS
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board
(Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate (Note 2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
PD
RqJA
PD
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 13
1
1D M G
G
1
M1E M G
G
1
1D = MMBTA42LT, SMMBTA42L
M1E = MMBTA43LT
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Publication Order Number:
MMBTA42LT1/D
MMBTA42L, SMMBTA42L, MMBTA43L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Max
Unit
300
200
−
−
300
200
−
−
6.0
−
−
−
0.1
0.1
−
−
0.1
0.1
25
40
−
−
40
40
−
−
−
−
0.5
0.5
VBE(sat)
−
0.9
Vdc
fT
50
−
MHz
−
−
3.0
4.0
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 3)
(IC = 1.0 mAdc, IB = 0)
Collector −Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
MMBTA42, SMMBTA42
MMBTA43
MMBTA42, SMMBTA42
MMBTA43
Emitter −Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
V(BR)CEO
V(BR)CBO
V(BR)EBO
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
(VCB = 160 Vdc, IE = 0)
MMBTA42, SMMBTA42
MMBTA43
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
(VEB = 4.0 Vdc, IC = 0)
MMBTA42, SMMBTA42
MMBTA43
ICBO
IEBO
Vdc
Vdc
Vdc
mAdc
mAdc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
Both Types
Both Types
(IC = 30 mAdc, VCE = 10 Vdc)
MMBTA42, SMMBTA42
MMBTA43
Collector −Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
MMBTA42, SMMBTA42
MMBTA43
Base−Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
hFE
VCE(sat)
−
Vdc
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
Collector−Base Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
MMBTA42, SMMBTA42
MMBTA43
Ccb
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
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2
MMBTA42L, SMMBTA42L, MMBTA43L
TYPICAL CHARACTERISTICS
1000
1.2
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
VCE = 10 V
TJ = 150°C
25°C
100
−55°C
10
0.1
1
10
100
−55°C
1
10
100
Figure 2. Collector−Emitter Saturation Voltage
vs. Collector Current
−55°C
25°C
150°C
0.3
0.2
0.1
IC/IB = 10
0
0.1
1
10
100
1.0
0.9
0.8 −55°C
0.7
0.6
25°C
0.5
0.4
150°C
0.3
0.2
0.1
IC/IB = 10
0
0.1
10
1
100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 3. Base−Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base−Emitter On Voltage vs.
Collector Current
0
−0.4
100
VCE = 10 V
−0.8
−1.2
−1.6
−2.0
qVB, for VBE
10
Cobo
1
−55°C to 150°C
−2.4
−2.8
0.1
TJ = 25°C
f = 1 MHz
Cibo
C, CAPACITANCE (pF)
qVB, TEMPERATURE COEFFICIENT (mV/°C)
0.2
Figure 1. DC Current Gain
0.5
0.4
25°C
0.4
IC, COLLECTOR CURRENT (mA)
VBE(on), BASE−EMITTER VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
0.6
0.6
IC, COLLECTOR CURRENT (mA)
0.9
0.7
150°C
0.8
0.0
0.1
1.0
0.8
IC/IB = 10
1.0
1
100
10
0.1
0.1
1
10
100
IC, COLLECTOR CURRENT (mA)
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Base−Emitter Temperature
Coefficient
Figure 6. Capacitance
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3
1000
MMBTA42L, SMMBTA42L, MMBTA43L
100
1
VCE = 20 V
TJ = 25°C
10
1
IC, COLLECTOR CURRENT (A)
fTau, CURRENT−GAIN BANDWIDTH (MHz)
TYPICAL CHARACTERISTICS
1.0 s
0.01
0.001
100
10
10 ms
0.1
1
10
100
IC, COLLECTOR CURRENT (mA)
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 7. Current−Gain — Bandwidth Product
Figure 8. Safe Operating Area
1000
ORDERING INFORMATION
Package Type
Shipping†
MMBTA42LT1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
SMMBTA42LT1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
MMBTA42LT3G
SOT−23
(Pb−Free)
10,000 / Tape & Reel
SMMBTA42LT3G
SOT−23
(Pb−Free)
10,000 / Tape & Reel
MMBTA43LT1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
Device Order Number
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
D
0.25
3
E
1
2
T
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
SEE VIEW C
c
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
GENERIC
MARKING DIAGRAM*
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
XXXMG
G
1
3X
2.90
3X
XXX = Specific Device Code
M = Date Code
G
= Pb−Free Package
0.90
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 7:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 11:
STYLE 12:
PIN 1. ANODE
PIN 1. CATHODE
2. CATHODE
2. CATHODE
3. CATHODE−ANODE
3. ANODE
STYLE 15:
PIN 1. GATE
2. CATHODE
3. ANODE
STYLE 16:
PIN 1. ANODE
2. CATHODE
3. CATHODE
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
3. CATHODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1. NO CONNECTION PIN 1. CATHODE
PIN 1. CATHODE
2. CATHODE
2. ANODE
2. ANODE
3. GATE
3. ANODE
3. CATHODE−ANODE
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 22:
PIN 1. RETURN
2. OUTPUT
3. INPUT
STYLE 23:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 24:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 27:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
STYLE 28:
PIN 1. ANODE
2. ANODE
3. ANODE
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
STYLE 13:
PIN 1. SOURCE
2. DRAIN
3. GATE
STYLE 25:
PIN 1. ANODE
2. CATHODE
3. GATE
STYLE 14:
PIN 1. CATHODE
2. GATE
3. ANODE
STYLE 26:
PIN 1. CATHODE
2. ANODE
3. NO CONNECTION
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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