DATA SHEET
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PNP Epitaxial Silicon
Transistor
TO−92−3
CASE 135AN
SS8550
12
Features
3
• 2 W Output Amplifier of Portable Radios in Class B Push−Pull
Operation
• Complementary to SS8050
• Collector Current: IC = 1.5 A
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector−Base Voltage
VCBO
−40
V
Collector−Emitter Voltage
VCEO
−25
V
Emitter−Base Voltage
VEBO
−6
V
Collector Current
IC
−1.5
A
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
−65 to 150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS (Note 1)
(TA = 25°C unless otherwise noted)
Parameter
TO−92−3
CASE 135AR
1
2
3
1. Emitter
2. Base
3. Collector
MARKING DIAGRAM
AS8
550x
YWW
S8550x
= Specific Device Code
Line 1: A = Assembly Location
Line 2: x = C or D
Line 3: Y = Year
WW= Work Week
Symbol
Value
Unit
Power Dissipation
PD
1
W
Power Dissipation Derate Above 25°C
PD
8
mW/°C
ORDERING INFORMATION
RqJA
125
°C/W
See detailed ordering and shipping information on page 2 of
this data sheet.
Thermal Resistance,
Junction−to−Ambient
1. PCB size: FR−4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch)
with minimum land pattern size.
© Semiconductor Components Industries, LLC, 2002
August, 2021 − Rev. 3
1
Publication Order Number:
SS8550/D
SS8550
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVCBO
Collector−Base Breakdown Voltage
IC = −100 mA, IE = 0
−40
V
BVCEO
Collector−Emitter Breakdown Voltage
IC = −2 mA, IB = 0
−25
V
BVEBO
Emitter−Base Breakdown Voltage
IE = −100 mA, IC = 0
−6
V
ICBO
Collector Cut−Off Current
VCB = −35 V, IE = 0
IEBO
Emitter Cut−Off Current
VEB = −6 V, IC = 0
hFE1
DC Current Gain
VCE = −1 V, IC = −5 mA
45
170
VCE = −1 V, IC = −100 mA
85
160
VCE = −1 V, IC = −800 mA
40
hFE2
hFE3
−100
nA
−100
nA
300
80
VCE(sat)
Collector−Emitter Saturation Voltage
IC = −800 mA, IB = −80 mA
−0.28
−0.50
V
VBE(sat)
Base−Emitter Saturation Voltage
IC = −800 mA, IB = −80 mA
−0.98
−1.20
V
VBE(on)
Base−Emitter On Voltage
VCE = −1 V, IC = −10 mA
−0.66
−1.00
Output Capacitance
VCB = −10 V, IE = 0, f = 1 MHz
Current Gain Bandwidth Product
VCE = −10 V, IC = −50 mA
Cob
fT
100
V
15
pF
200
MHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
hFE CLASSIFICATION
Classification
C
D
hFE2
120 ~ 200
160 ~ 300
ORDERING INFORMATION
Part Number
Top Mark
Package
Shipping
SS8550CBU
S8550C
TO−92−3, case 135AN (Pb−Free)
10,000 Units/ Bulk Box
SS8550CTA
S8550C
TO−92−3, case 135AR (Pb−Free)
2,000 Units/ Fan−Fold
SS8550DBU
S8550D
TO−92−3, case 135AN (Pb−Free)
10,000 Units/ Bulk Box
SS8550DTA
S8550D
TO−92−3, case 135AR (Pb−Free)
2,000 Units/ Fan−Fold
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2
SS8550
TYPICAL PERFORMANCE CHARACTERISTICS
1000
VCE = −1V
IB=−4.0mA
−0.4
hFE, DC CURRENT GAIN
IC, COLLECTOR CURRENT [mA]
−0.5
IB=−3.5mA
IB=−3.0mA
−0.3
IB=−2.5mA
IB=−2.0mA
IB=−1.5mA
−0.2
IB=−1.0mA
−0.1
100
10
IB=−0.5mA
−0.4
−0.8
−1.2
−1.6
1
−0.1
−2.0
−10000
−1000
−1000
VBE(sat)
−100
VCE(sat)
−1
−10
−100
VCE = −1V
−10
−1
−0.1
0
−1000
−0.2
IC, COLLECTOR CURRENT [mA]
fT, CURRENT GAIN−BANDWIDTH PRODUCT [MHz]
f=1MHz
IE=0
10
−100
−0.6
−0.8
−1.0
−1.2
Figure 4. Base−Emitter On Voltage
100
−10
−0.4
VBE, BASE−EMITTER VOLTAGE [V]
Figure 3. Base−Emitter Saturation Voltage and
Collector−Emitter Saturation Voltage
Cob, CAPACITANCE [pF]
−100
−100
IC=10IB
1
−1
−10
Figure 2. DC Current Gain
IC, COLLECTOR CURRENT [mA]
VBE(sat), VCE(sat), SATURATION VOLTAGE [V]
Figure 1. Static Characteristic
−10
−0.1
−1
IC, COLLECTOR CURRENT [mA]
VCE, COLLECTOR−EMITTER VOLTAGE [V]
−1000
VCB, COLLECTOR−BASE VOLTAGE [V]
Figure 5. Collector Output Capacitance
1000
VCE=−10V
100
10
−1
−10
−100
−1000
IC, COLLECTOR CURRENT [mA]
Figure 6. Current Gain Bandwidth Product
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3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−92 3 4.825x4.76
CASE 135AN
ISSUE O
DOCUMENT NUMBER:
DESCRIPTION:
98AON13880G
TO−92 3 4.825X4.76
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−92 3 4.83x4.76 LEADFORMED
CASE 135AR
ISSUE O
DOCUMENT NUMBER:
DESCRIPTION:
98AON13879G
DATE 30 SEP 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
TO−92 3 4.83X4.76 LEADFORMED
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
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