SURA8160T3G

Surface Mount Ultrafast Power Rectifier MURA160, NRVUA160V, SURA8160 Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system. Features • • • • • • Small Compact Surface Mountable Package with J−Bend Leads Rectangular Package for Automated Handling High Temperature Glass Passivated Junction Low Forward Voltage Drop (1.05 V Max @ 1.0 A, TJ = 150°C) NRVUA and SURA8 Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com ULTRAFAST RECTIFIER 1 AMPERE, 600 VOLTS SMA CASE 403D MARKING DIAGRAM Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 70 mg (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead and Mounting Surface Temperature for Soldering Purposes: • • 260°C Max. for 10 Seconds Polarity: Polarity Band Indicates Cathode Lead ESD Protection: ♦ Human Body Model > 4000 V (Class 3) ♦ Machine Model > 400 V (Class C) U4J AYWW G U4J A Y WW G = = = = = Device Code Assembly Location Year Work Week Pb−Free Package ORDERING INFORMATION Package Shipping† MURA160T3G SMA (Pb−Free) 5,000/Tape & Reel NRVUA160VT3G SMA (Pb−Free) 5,000/Tape & Reel SURA8160T3G SMA (Pb−Free) 5,000/Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2016 July, 2020 − Rev. 8 1 Publication Order Number: MURA160T3/D MURA160, NRVUA160V, SURA8160 MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 600 V Average Rectified Forward Current @ TL = 145°C @ TL = 110°C IF(AV) Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Operating Junction Temperature Range TJ 1.0 2.0 30 −65 to +175 A A °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Lead (TL = 25°C) (Note 1) Thermal Resistance, Junction−to−Ambient (Note 1) Thermal Resistance, Junction−to−Case Top (Note 1) Symbol Max Unit PsiJL (Note 2) RqJA 24 °C/W 216 YJCT 16 °C/W Max Unit 1. Rating applies when surface mounted on the minimum pad size recommended, PC Board FR−4. 2. In compliance with JEDEC 51, these values (historically represented by RqJL) are now referenced as PsiJL. ELECTRICAL CHARACTERISTICS Characteristic Symbol Maximum Instantaneous Forward Voltage (Note 3) (iF = 1.0 A, TJ = 25°C) (iF = 1.0 A, TJ = 150°C) vF Maximum Instantaneous Reverse Current (Note 3) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 150°C) iR Maximum Reverse Recovery Time (iF = 1.0 A, di/dt = 50 A/ms) trr 1.25 1.05 5.0 150 75 V mA ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. www.onsemi.com 2 MURA160, NRVUA160V, SURA8160 IR, REVERSE CURRENT (mA) 10 TJ = 100°C 1 0.1 0.01 IF, INSTANTANEOUS FORWARD CURRENT (A) 1000 TJ = 150°C TJ = 25°C 0 100 300 200 400 500 TJ = 25°C 0 100 200 300 400 500 VR, REVERSE VOLTAGE (VOLTS) Figure 1. Typical Reverse Current Figure 2. Maximum Reverse Current 100°C TC = 150°C 25°C 1 0.1 0.3 TJ = 100°C 10 VR, REVERSE VOLTAGE (VOLTS) 10 0.01 TJ = 150°C 100 1 600 0.5 0.7 0.9 1.1 1.3 1.5 1.7 IF, INSTANTANEOUS FORWARD CURRENT (A) IR, REVERSE CURRENT (mA) 100 10 TC = 150°C 100°C 25°C 1 0.1 0.01 0.3 VF, INSTANTANEOUS VOLTAGE (VOLTS) 0.5 0.7 0.9 1.1 1.3 1.5 1.7 VF, INSTANTANEOUS VOLTAGE (VOLTS) Figure 4. Maximum Forward Voltage Figure 3. Typical Forward Voltage www.onsemi.com 3 600 1.9 MURA160, NRVUA160V, SURA8160 30 C, CAPACITANCE (pF) 20 15 10 5 4 0 12 8 20 16 28 24 32 36 20 15 10 0 40 8 12 16 20 24 28 32 Figure 5. Typical Capacitance Figure 6. Maximum Capacitance dc 3 SQUARE WAVE 2 1 80 4 VR, REVERSE VOLTAGE (VOLTS) 4 60 0 VR, REVERSE VOLTAGE (VOLTS) 5 0 NOTE: MAXIMUM CAPACITANCE AT 0 V = 27 pF 25 5 IF(AV), AVERAGE FORWARD CURRENT (A) 0 IF(AV), AVERAGE FORWARD CURRENT (A) NOTE: TYPICAL CAPACITANCE AT 0 V = 24 pF 100 120 140 160 180 0.6 SQUARE WAVE 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 100 120 140 Figure 8. Current Derating, Ambient (FR−4 Board with Minimum Pad) dc SQUARE WAVE 2 1.5 1 0.5 0.5 80 TA, AMBIENT TEMPERATURE (°C) 3.5 0 180 0.7 4 0 160 0.8 4.5 2.5 40 dc 0.9 Figure 7. Current Derating, Lead 3 36 1 TL, LEAD TEMPERATURE (°C) PF, AVERAGE POWER DISSIPATION (W) C, CAPACITANCE (pF) 25 1 1.5 2 2.5 3 IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 9. Power Dissipation www.onsemi.com 4 3.5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS STYLE 1 SMA CASE 403D ISSUE J STYLE 2 SCALE 1:1 STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE DATE 22 OCT 2021 STYLE 2: NO POLARITY GENERIC MARKING DIAGRAM* xxxx AYWWG STYLE 1 xxxx A Y WW G xxxx AYWWG STYLE 2 = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON04079D SMA Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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