SZMMSZ4715T1G

DATA SHEET www.onsemi.com Zener Voltage Regulators MMSZ4xxxT1G Series, SZMMSZ4xxxT1G Series SOD−123 CASE 425 STYLE 1 500 mW, Low IZT SOD−123 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD−123 package. These devices provide a convenient alternative to the leadless 34−package style. 1 Cathode 2 Anode Features • • • • • • • • 500 mW Rating on FR−4 or FR−5 Board Wide Zener Reverse Voltage Range − 1.8 V to 43 V Low Reverse Current (IZT) − 50 mA Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications ESD Rating of Class 3 (> 16 kV) per Human Body Model SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant* Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds POLARITY: Cathode indicated by polarity band FLAMMABILITY RATING: UL 94 V−0 MAXIMUM RATINGS Rating Total Power Dissipation on FR−5 Board, (Note 1) @ TL = 75°C Derated above 75°C Symbol PD Thermal Resistance, (Note 2) Junction−to−Ambient RqJA Thermal Resistance, (Note 2) Junction−to−Lead RqJL Junction and Storage Temperature Range TJ, Tstg Max Units 500 6.7 mW mW/°C °C/W 340 150 −55 to +150 MARKING DIAGRAM 1 xx M G xx M G G = Device Code (Refer to page 3) = Date Code = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping† MMSZ4xxxT1G SOD−123 (Pb−Free) 3,000 / Tape & Reel SZMMSZ4xxxT1G SOD−123 (Pb−Free) 3,000 / Tape & Reel MMSZ4xxxT3G SOD−123 (Pb−Free) 10,000 / Tape & Reel SZMMSZ4xxxT3G SOD−123 (Pb−Free) 10,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. °C/W DEVICE MARKING INFORMATION °C See specific marking information in the device marking column of the Electrical Characteristics table on page 3 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 3.5 X 1.5 inches, using the minimum recommended footprint. 2. Thermal Resistance measurement obtained via infrared Scan Method. *For additional information on our Pb−Free strategy and soldering details, please download the onsemi Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 August, 2021 − Rev. 13 1 Publication Order Number: MMSZ4678T1/D MMSZ4xxxT1G Series, SZMMSZ4xxxT1G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless I otherwise noted, VF = 0.9 V Max. @ IF = 10 mA) Symbol IF Parameter VZ Reverse Zener Voltage @ IZT IZT Reverse Current IR Reverse Leakage Current @ VR VR Reverse Voltage IF Forward Current VF Forward Voltage @ IF VZ VR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. IR VF IZT Zener Voltage Regulator www.onsemi.com 2 V MMSZ4xxxT1G Series, SZMMSZ4xxxT1G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA) Zener Voltage (Note 3) VZ (Volts) Leakage Current @ IZT IR @ VR Device Marking Min Nom Max mA mA Volts MMSZ4678T1G CC 1.71 1.8 1.89 50 7.5 1 MMSZ4679T1G CD 1.90 2.0 2.10 50 5 1 MMSZ4680T1G CE 2.09 2.2 2.31 50 4 1 Device* MMSZ4681T1G CF 2.28 2.4 2.52 50 2 1 MMSZ4682T1G CH 2.565 2.7 2.835 50 1 1 MMSZ4683T1G CJ 2.85 3.0 3.15 50 0.8 1 MMSZ4684T1G CK 3.13 3.3 3.47 50 7.5 1.5 MMSZ4685T1G CM 3.42 3.6 3.78 50 7.5 2 MMSZ4686T1G CN 3.70 3.9 4.10 50 5 2 MMSZ4687T1G CP 4.09 4.3 4.52 50 4 2 SZMMSZ4687T1G CG6 4.09 4.3 4.52 50 4 2 MMSZ4688T1G CT 4.47 4.7 4.94 50 10 3 MMSZ4689T1G CU 4.85 5.1 5.36 50 10 3 MMSZ4690T1G/T3G CV 5.32 5.6 5.88 50 10 4 MMSZ4691T1G CA 5.89 6.2 6.51 50 10 5 MMSZ4692T1G CX 6.46 6.8 7.14 50 10 5.1 MMSZ4693T1G CY 7.13 7.5 7.88 50 10 5.7 MMSZ4694T1G CZ 7.79 8.2 8.61 50 1 6.2 MMSZ4695T1G DC 8.27 8.7 9.14 50 1 6.6 MMSZ4696T1G DD 8.65 9.1 9.56 50 1 6.9 MMSZ4697T1G DE 9.50 10 10.50 50 1 7.6 MMSZ4698T1G DF 10.45 11 11.55 50 0.05 8.4 MMSZ4699T1G DH 11.40 12 12.60 50 0.05 9.1 MMSZ4700T1G DJ 12.35 13 13.65 50 0.05 9.8 MMSZ4701T1G DK 13.30 14 14.70 50 0.05 10.6 MMSZ4702T1G DM 14.25 15 15.75 50 0.05 11.4 MMSZ4703T1G † DN 15.20 16 16.80 50 0.05 12.1 MMSZ4704T1G DP 16.15 17 17.85 50 0.05 12.9 MMSZ4705T1G DT 17.10 18 18.90 50 0.05 13.6 MMSZ4706T1G DU 18.05 19 19.95 50 0.05 14.4 MMSZ4707T1G DV 19.00 20 21.00 50 0.01 15.2 MMSZ4708T1G DA 20.90 22 23.10 50 0.01 16.7 MMSZ4709T1G DX 22.80 24 25.20 50 0.01 18.2 MMSZ4710T1G DY 23.75 25 26.25 50 0.01 19.0 MMSZ4711T1G † EA 25.65 27 28.35 50 0.01 20.4 MMSZ4712T1G EC 26.60 28 29.40 50 0.01 21.2 MMSZ4713T1G ED 28.50 30 31.50 50 0.01 22.8 MMSZ4714T1G EE 31.35 33 34.65 50 0.01 25.0 MMSZ4715T1G EF 34.20 36 37.80 50 0.01 27.3 MMSZ4716T1G EH 37.05 39 40.95 50 0.01 29.6 MMSZ4717T1G EJ 40.85 43 45.15 50 0.01 32.6 3. Nominal Zener voltage is measured with the device junction in thermal equilibrium at TL = 30°C ±1°C. *Include SZ-prefix devices where applicable. †MMSZ4703 and MMSZ4711 Not Available in 10,000/Tape & Reel www.onsemi.com 3 MMSZ4xxxT1G Series, SZMMSZ4xxxT1G Series 8 θ VZ, TEMPERATURE COEFFICIENT (mV/°C) θ VZ, TEMPERATURE COEFFICIENT (mV/°C) TYPICAL CHARACTERISTICS 7 6 TYPICAL TC VALUES 5 4 VZ @ IZT 3 2 1 0 -1 -2 -3 2 3 4 5 6 7 8 9 10 VZ, NOMINAL ZENER VOLTAGE (V) 11 100 TYPICAL TC VALUES VZ @ IZT 10 1 12 10 100 VZ, NOMINAL ZENER VOLTAGE (V) Figure 1. Temperature Coefficients (Temperature Range − 55°C to +150°C) Figure 2. Temperature Coefficients (Temperature Range − 55°C to +150°C) Ppk , PEAK SURGE POWER (WATTS) 1000 1.0 PD versus TL 0.8 0.6 PD versus TA 0.4 0.2 0 0 25 50 75 100 T, TEMPERATURE (5C) 125 150 Figure 3. Steady State Power Derating RECTANGULAR WAVEFORM, TA = 25°C 100 10 1 0.1 1 10 PW, PULSE WIDTH (ms) TJ = 25°C IZ(AC) = 0.1 IZ(DC) f = 1 kHz IZ = 1 mA 100 5 mA 20 mA 10 1 1 100 1000 Figure 4. Maximum Nonrepetitive Surge Power 1000 Z ZT, DYNAMIC IMPEDANCE ( Ω ) PD, POWER DISSIPATION (WATTS) 1.2 10 VZ, NOMINAL ZENER VOLTAGE Figure 5. Effect of Zener Voltage on Zener Impedance www.onsemi.com 4 100 MMSZ4xxxT1G Series, SZMMSZ4xxxT1G Series TYPICAL CHARACTERISTICS 1000 TA = 25°C 0 V BIAS 1 V BIAS C, CAPACITANCE (pF) I R , LEAKAGE CURRENT ( μA) 1000 100 BIAS AT 50% OF VZ NOM 10 1 1 10 VZ, NOMINAL ZENER VOLTAGE (V) 100 100 10 1 +150°C 0.1 0.01 0.001 +25°C 0.0001 -55°C 0.00001 0 10 Figure 6. Typical Capacitance 20 30 40 50 60 70 VZ, NOMINAL ZENER VOLTAGE (V) Figure 7. Typical Leakage Current 100 100 TA = 25°C I Z , ZENER CURRENT (mA) I Z , ZENER CURRENT (mA) TA = 25°C 10 1 0.1 0.01 80 0 2 4 6 8 VZ, ZENER VOLTAGE (V) 1 0.1 0.01 12 10 10 10 30 50 70 VZ, ZENER VOLTAGE (V) 90 Figure 9. Zener Voltage versus Zener Current (12 V to 91 V) Figure 8. Zener Voltage versus Zener Current (VZ Up to 12 V) www.onsemi.com 5 90 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOD−123 CASE 425−04 ISSUE G DATE 07 OCT 2009 SCALE 5:1 D A ÂÂÂÂ ÂÂÂÂ ÂÂÂÂ A1 1 HE DIM A A1 b c D E HE L q E 2 q L b C ÉÉÉ ÉÉÉ ÉÉÉ 2.36 0.093 4.19 0.165 ÉÉÉ ÉÉÉ ÉÉÉ MILLIMETERS MIN NOM MAX 0.94 1.17 1.35 0.00 0.05 0.10 0.51 0.61 0.71 ----0.15 1.40 1.60 1.80 2.54 2.69 2.84 3.56 3.68 3.86 ----0.25 --10 ° 0° MIN 0.037 0.000 0.020 --0.055 0.100 0.140 0.010 0° INCHES NOM 0.046 0.002 0.024 --0.063 0.106 0.145 ----- MAX 0.053 0.004 0.028 0.006 0.071 0.112 0.152 --10 ° GENERIC MARKING DIAGRAM* 1 SOLDERING FOOTPRINT* 0.91 0.036 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. XXXMG G XXX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) 1.22 0.048 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. STYLE 1: PIN 1. CATHODE 2. ANODE SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ASB42927B SOD−123 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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