TIP112

TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) Plastic Medium-Power Complementary Silicon Transistors www.onsemi.com Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − • • • • hFE = 2500 (Typ) @ IC = 1.0 Adc Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus) = 60 Vdc (Min) − TIP110, TIP115 = 80 Vdc (Min) − TIP111, TIP116 = 100 Vdc (Min) − TIP112, TIP117 Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.5 Vdc (Max) @ IC = 2.0 Adc Monolithic Construction with Built−in Base−Emitter Shunt Resistors Pb−Free Packages are Available* DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60−80−100 VOLTS, 50 WATTS MARKING DIAGRAM 4 TO−220AB CASE 221A STYLE 1 1 2 3 STYLE 1: PIN 1. 2. 3. 4. TIP11x x A Y WW G TIP11xG AYWW BASE COLLECTOR EMITTER COLLECTOR = Device Code = 0, 1, 2, 5, 6, or 7 = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information on page 3 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 November, 2014 − Rev. 8 1 Publication Order Number: TIP110/D TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) MAXIMUM RATINGS Symbol TIP110, TIP115 TIP111, TIP116 TIP112, TIP117 Unit VCEO 60 80 100 Vdc Collector−Base Voltage VCB 60 80 100 Vdc Emitter−Base Voltage VEB 5.0 Vdc Collector Current − Continuous − Peak IC 2.0 4.0 Adc Base Current IB 50 mAdc Total Power Dissipation @ TC = 25°C Derate above 25°C PD 50 0.4 W W/°C Total Power Dissipation @ TA = 25°C Derate above 25°C PD 2.0 0.016 W W/°C Rating Collector−Emitter Voltage Unclamped Inductive Load Energy − Figure 13 Operating and Storage Junction E 25 mJ TJ, Tstg –65 to +150 °C Symbol Max Unit THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction−to−Case RqJC 2.5 °C/W Thermal Resistance, Junction−to−Ambient RqJA 62.5 °C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Characteristic Min Max 60 80 100 − − − − − − 2.0 2.0 2.0 − − − 1.0 1.0 1.0 − 2.0 1000 500 − − Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 1) (IC = 30 mAdc, IB = 0) TIP110, TIP115 TIP111, TIP116 TIP112, TIP117 Collector Cutoff Current (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0) TIP110, TIP115 TIP111, TIP116 TIP112 ,TIP117 Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0) TIP110, TIP115 TIP111, TIP116 TIP112, TIP117 Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) VCEO(sus) Vdc ICEO mAdc ICBO IEBO mAdc mAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc) (IC = 2.0 Adc, VCE = 4.0 Vdc) hFE − Collector−Emitter Saturation Voltage (IC = 2.0 Adc, IB = 8.0 mAdc) VCE(sat) − 2.5 Vdc Base−Emitter On Voltage (IC = 2.0 Adc, VCE = 4.0 Vdc) VBE(on) − 2.8 Vdc Small−Signal Current Gain (IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz) hfe 25 − − Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Cob − − 200 100 DYNAMIC CHARACTERISTICS TIP115, TIP116, TIP117 TIP110, TIP111, TIP112 pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. www.onsemi.com 2 TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) COLLECTOR COLLECTOR BASE BASE ≈ 8.0 k ≈ 120 ≈ 8.0 k ≈ 120 EMITTER EMITTER Figure 1. Darlington Circuit Schematic ORDERING INFORMATION Device Package Shipping TO−220 50 Units / Rail TO−220 (Pb−Free) 50 Units / Rail TO−220 50 Units / Rail TO−220 (Pb−Free) 50 Units / Rail TO−220 50 Units / Rail TO−220 (Pb−Free) 50 Units / Rail TO−220 50 Units / Rail TO−220 (Pb−Free) 50 Units / Rail TO−220 50 Units / Rail TO−220 (Pb−Free) 50 Units / Rail TO−220 50 Units / Rail TO−220 (Pb−Free) 50 Units / Rail TIP110 TIP110G TIP111 TIP111G TIP112 TIP112G TIP115 TIP115G TIP116 TIP116G TIP117 TIP117G PD, POWER DISSIPATION (WATTS) TA TC 3.0 60 2.0 40 TC 1.0 20 TA 0 0 0 20 40 60 80 100 T, TEMPERATURE (°C) 120 Figure 2. Power Derating www.onsemi.com 3 140 160 TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) 4.0 VCC -30 V RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA VCC = 30 V IC/IB = 250 ts IB1 = IB2 TJ = 25°C 2.0 RC SCOPE t, TIME (s) μ TUT V2 approx +8.0 V RB D1 51 0 V1 approx -12 V ≈ 8.0 k ≈ 60 +4.0 V 25 ms tr 0.6 0.4 for td and tr, D1 is disconnected and V2 = 0, RB and RC are varied to obtain desired test currents. tr, tf ≤ 10 ns DUTY CYCLE = 1.0% tf 1.0 0.8 0.2 0.04 0.06 For NPN test circuit, reverse diode, polarities and input pulses. 0.1 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 3. Switching Times Test Circuit 1.0 0.7 0.5 Figure 4. Switching Times P(pk) ZqJC(t) = r(t) RqJC RqJC = 2.5°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) ZqJC(t) DUTY CYCLE, D = t1/t2 0.05 0.02 0.01 SINGLE PULSE 0.01 0.01 4.0 0.1 0.1 0.02 2.0 0.2 0.2 0.03 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) D = 0.5 0.3 0.07 0.05 td @ VBE(off) = 0 PNP NPN 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 t, TIME (ms) 10 Figure 5. Thermal Response www.onsemi.com 4 20 50 100 200 500 1.0 k TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) ACTIVE−REGION SAFE−OPERATING AREA 10 4.0 1ms 5ms 2.0 1.0 TJ = 150°C dc BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECONDARY BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 0.1 1.0 TIP115 TIP116 TIP117 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) 10 4.0 2.0 TIP110 TIP111 TIP112 CURVES APPLY BELOW RATED VCEO 0.1 1.0 40 60 80 100 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) TJ = 150°C dc BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECONDARY BREAKDOWN LIMITED 1.0 60 80 100 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 6. TIP115, 116, 117 Figure 7. TIP110, 111, 112 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 6 and 7 is based on TJ(pk) = 150°C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150°C. TJ(pk) may be calculated from the data in Figure 5. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 200 TC = 25°C C, CAPACITANCE (pF) 100 70 50 Cob 30 Cib 20 PNP NPN 10 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 6.0 10 VR, REVERSE VOLTAGE (VOLTS) Figure 8. Capacitance www.onsemi.com 5 20 40 TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) NPN TIP110, 111, 112 PNP TIP115, 116, 117 6.0 k 6.0 k TJ = 125°C 3.0 k 25°C 2.0 k -55°C 1.0 k 800 600 400 300 0.04 0.06 0.1 0.4 0.6 0.2 1.0 IC, COLLECTOR CURRENT (AMP) 3.0 k 25°C 2.0 k -55°C 1.0 k 800 600 400 300 0.04 0.06 4.0 2.0 VCE = 3.0 V TJ = 125°C 4.0 k hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 4.0 k VCE = 3.0 V 0.1 2.0 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 4.0 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 9. DC Current Gain 3.4 3.0 TJ = 25°C IC = 0.5 A 1.0 A 4.0 A 2.0 A 2.6 2.2 1.8 1.4 1.0 0.6 0.1 0.2 0.5 1.0 2.0 5.0 10 IB, BASE CURRENT (mA) 20 50 100 3.4 TJ = 25°C 3.0 2.6 IC = 0.5 A 1.0 A 2.0 A 4.0 A 2.2 1.8 1.4 1.0 0.6 0.1 0.2 0.5 1.0 2.0 5.0 10 IB, BASE CURRENT (mA) 20 50 100 Figure 10. Collector Saturation Region 2.2 2.2 TJ = 25°C TJ = 25°C 1.4 1.8 VBE(sat) @ IC/IB = 250 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.8 VBE @ VCE = 3.0 V 1.0 VCE(sat) @ IC/IB = 250 0.6 0.2 0.04 0.06 VBE(sat) @ IC/IB = 250 1.4 VBE @ VCE = 3.0 V 1.0 VCE(sat) @ IC/IB = 250 0.6 0.1 0.2 0.4 0.6 1.0 2.0 0.2 0.04 0.06 4.0 IC, COLLECTOR CURRENT (AMP) 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) Figure 11. “On” Voltages www.onsemi.com 6 2.0 4.0 TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) PNP TIP115, 116, 117 +0.8 θV, TEMPERATURE COEFFICIENTS (mV/°C) θV, TEMPERATURE COEFFICIENTS (mV/°C) NPN TIP110, 111, 112 *APPLIES FOR IC/IB ≤ hFE/3 0 -0.8 -1.6 25°C to 150°C *qVC for VCE(sat) -2.4 -55°C to 25°C 25°C to 150°C -3.2 qVC for VBE -55°C to 25°C -4.0 -4.8 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 +0.8 *APPLIES FOR IC/IB ≤ hFE/3 0 -0.8 -1.6 25°C to 150°C *qVC for VCE(sat) -55°C to 25°C -2.4 25°C to 150°C -3.2 -4.0 qVC for VBE -4.8 0.04 0.06 -55°C to 25°C 0.1 IC, COLLECTOR CURRENT (AMP) 0.2 0.4 0.6 1.0 2.0 4.0 IC, COLLECTOR CURRENT (AMP) Figure 12. Temperature Coefficients 105 REVERSE 104 103 REVERSE FORWARD IC, COLLECTOR CURRENT (A) μ IC, COLLECTOR CURRENT (A) μ 105 VCE = 30 V 102 TJ = 150°C 101 100 100°C 25°C 10-1 -0.6 -0.4 -0.2 0 103 VCE = 30 V 102 101 100 TJ = 150°C 100°C 25°C 10-1 -0.6 -0.4 -0.2 +0.2 +0.4 +0.6 +0.8 +1.0 +1.2 +1.4 VBE, BASE‐EMITTER VOLTAGE (VOLTS) TEST CIRCUIT tw ≈ 3.5 ms (SEE NOTE A) 100 mH RBB1 TUT 2kW 50 W VBB1 = 10 V + - + - RBB2 100 W 50 W VBB2 = 0 +0.2 +0.4 +0.6 +0.8 +1.0 +1.2 +1.4 Figure 13. Collector Cut-Off Region VOLTAGE AND CURRENT WAVEFORMS INPUT VOLTAGE MJE254 0 VBE, BASE‐EMITTER VOLTAGE (VOLTS) VCE MONITOR INPUT FORWARD 104 0V -5 V 100 ms VCC = 20 V IC MONITOR COLLECTOR CURRENT RS = 0.1 W 0.71 A 0V VCER COLLECTOR VOLTAGE 20 V VCE(sat) Note A: Input pulse width is increased until ICM = 0.71 A, NPN test shown; for PNP test reverse all polarity and use MJE224 driver. Figure 14. Inductive Load Switching www.onsemi.com 7 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220 CASE 221A ISSUE AK DATE 13 JAN 2022 SCALE 1:1 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. BASE EMITTER COLLECTOR EMITTER STYLE 3: PIN 1. 2. 3. 4. CATHODE ANODE GATE ANODE STYLE 4: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 STYLE 5: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 6: PIN 1. 2. 3. 4. ANODE CATHODE ANODE CATHODE STYLE 7: PIN 1. 2. 3. 4. CATHODE ANODE CATHODE ANODE STYLE 8: PIN 1. 2. 3. 4. CATHODE ANODE EXTERNAL TRIP/DELAY ANODE STYLE 9: PIN 1. 2. 3. 4. GATE COLLECTOR EMITTER COLLECTOR STYLE 10: PIN 1. 2. 3. 4. GATE SOURCE DRAIN SOURCE STYLE 11: PIN 1. 2. 3. 4. DRAIN SOURCE GATE SOURCE STYLE 12: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE NOT CONNECTED DOCUMENT NUMBER: DESCRIPTION: 98ASB42148B TO−220 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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