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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
TIP120 / TIP121 / TIP122
NPN Epitaxial Darlington Transistor
Equivalent Circuit
C
Features
• Medium Power Linear Switching Applications
• Complementary to TIP125 / TIP126 / TIP127
B
R1
TO-220
1
1.Base
2.Collector
3.Emitter
R2
R1 ≅ 8kΩ
R2 ≅ 0.12kΩ
E
Ordering Information
Part Number
Top Mark
Package
Packing Method
TIP120
TIP120
TO-220 3L (Single Gauge)
Bulk
TIP120TU
TIP120
TO-220 3L (Single Gauge)
Rail
TIP121
TIP121
TO-220 3L (Single Gauge)
Bulk
TIP121TU
TIP121
TO-220 3L (Single Gauge)
Rail
TIP122
TIP122
TO-220 3L (Single Gauge)
Bulk
TIP122TU
TIP122
TO-220 3L (Single Gauge)
Rail
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Symbol
VCBO
Parameter
Collector-Base Voltage
Value
TIP120
60
TIP121
80
TIP122
100
TIP120
60
TIP121
80
TIP122
100
Unit
V
VCEO
Collector-Emitter Voltage
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current (DC)
5
A
ICP
Collector Current (Pulse)
8
A
IB
Base Current (DC)
120
mA
TJ
Junction Temperature
150
°C
-65 to 150
°C
TSTG
Storage Temperature Range
© 2001 Fairchild Semiconductor Corporation
TIP120 / TIP121 / TIP122 Rev. 1.1.0
www.fairchildsemi.com
TIP120 / TIP121 / TIP122 — NPN Epitaxial Darlington Transistor
November 2014
Values are at TC = 25°C unless otherwise noted.
Symbol
PC
Parameter
Value
Collector Dissipation (TA = 25°C)
2
Collector Dissipation (TC = 25°C)
65
Unit
W
Electrical Characteristics
Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
TIP120
VCEO(sus)
ICEO
Collector-Emitter Sustaining
TIP121
Voltage
TIP122
Collector Cut-Off Current
ICBO
Collector Cut-Off Current
IEBO
Emitter Cut-Off Current
hFE
DC Current Gain(1)
Max.
Unit
60
IC = 100 mA, IB = 0
80
V
100
TIP120
VCE = 30 V, IB = 0
0.5
TIP121
VCE = 40 V, IB = 0
0.5
TIP122
VCE = 50 V, IB = 0
0.5
TIP120
VCB = 60 V, IE = 0
0.2
TIP121
VCB = 80 V, IE = 0
0.2
TIP122
VCB = 100 V, IE = 0
0.2
VEB = 5 V, IC = 0
2
VCE = 3 V, IC = 0.5 A
1000
VCE = 3 V, IC = 3 A
1000
mA
mA
mA
IC = 3 A, IB = 12 mA
2.0
IC = 5 A, IB = 20 mA
4.0
Base-Emitter On Voltage(1)
VCE = 3 V, IC = 3 A
2.5
V
Output Capacitance
VCB = 10 V, IE = 0,
f = 0.1 MHz
200
pF
VCE(sat)
Collector-Emitter Saturation Voltage(1)
VBE(on)
Cob
Min.
V
Note:
1. Pulse test: pw ≤ 300 μs, duty cycle ≤ 2%.
© 2001 Fairchild Semiconductor Corporation
TIP120 / TIP121 / TIP122 Rev. 1.1.0
www.fairchildsemi.com
2
TIP120 / TIP121 / TIP122 — NPN Epitaxial Darlington Transistor
Thermal Characteristics
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
10000
hFE, DC CURRENT GAIN
VCE = 4V
1000
100
0.1
1
3.5
IC = 250IB
3.0
2.5
2.0
VBE(sat)
1.5
1.0
VCE(sat)
0.5
0.1
10
IC[A], COLLECTOR CURRENT
1
10
IC[A], COLLECTOR CURRENT
Figure 1. DC Current Gain
Figure 2. Base-Emitter Saturation Voltage and
Collector-Emitter Saturation Voltage
1000
10
s
0μ
10 μs
0
50
IC[A], COLLECTOR CURRENT
Cib
10
0.1
1
10
s
5m
Cob
s
1m
100
DC
Cob[pF] Cib[pF], CAPACITANCE
f=0.1MHz
1
0.1
TIP120
TIP121
TIP122
0.01
100
1
10
100
VCE[V], COLLECTOR-EMITTER VOLTAGE
VCB[V], COLLECTOR-BASE VOLTAGE
VEB[V], EMITTER-BASE VOLTAGE
Figure 3. Output and Input Capacitance
vs. Reverse Voltage
Figure 4. Safe Operating Area
80
PC[W], POWER DISSIPATION
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 5. Power Derating
© 2001 Fairchild Semiconductor Corporation
TIP120 / TIP121 / TIP122 Rev. 1.1.0
www.fairchildsemi.com
3
TIP120 / TIP121 / TIP122 — NPN Epitaxial Darlington Transistor
Typical Performance Characteristics
TIP120 / TIP121 / TIP122 — NPN Epitaxial Darlington Transistor
Physical Dimensions
Figure 6. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
© 2001 Fairchild Semiconductor Corporation
TIP120 / TIP121 / TIP122 Rev. 1.1.0
www.fairchildsemi.com
4
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Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I72
© Fairchild Semiconductor Corporation
www.fairchildsemi.com
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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