VEC2315-TL-H

VEC2315 Power MOSFET –60V, 137mΩ, –2.5A, Dual P-Channel This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features  Low On-Resistance  4V drive  Low-Profile Package  ESD Diode-Protected Gate  Pb-Free, Halogen Free and RoHS compliance www.onsemi.com VDSS RDS(on) Max 137mΩ@ 10V ID Max 60V 180mΩ@ 4.5V 2.5A 194mΩ@ 4V ELECTRICAL CONNECTION P-Channel Typical Applications  Motor Driver 8 7 6 5 SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) Parameter Symbol Value Unit Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS 20 V Drain Current (DC) ID 2.5 A Drain Current (Pulse) PW  10s, duty cycle  1% IDP 10 A PD 0.9 W PT 1.0 W Power Dissipation When mounted on ceramic substrate 2 (900mm  0.8mm) 1unit Total Dissipation When mounted on ceramic substrate 2 (900mm  0.8mm) Junction Temperature 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 1 2 3 PACKING TYPE : TL 4 MARKING UM LOTNo. TL Tj 150 C Storage Temperature Tstg 55 to +150 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. THERMAL RESISTANCE RATINGS Parameter Junction to Ambient When mounted on ceramic substrate 2 (900mm  0.8mm) 1unit Symbol RJA © Semiconductor Components Industries, LLC, 2015 October 2015 - Rev. 1 Value 138.8 1 Unit C/W Publication Order Number : VEC2315/D VEC2315 ELECTRICAL CHARACTERISTICS at Ta  25C (Note 2) Parameter Symbol Drain to Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate to Source Leakage Current IGSS VGS(th) gFS Gate Threshold Voltage Forward Transconductance Conditions Value min ID=1mA, VGS=0V VDS=60V, VGS=0V VGS=16V, VDS=0V 60 VDS=10V, ID=1mA 1.2 typ max Unit V 1 A 10 A 2.6 V VDS=10V, ID=1.5A 3.9 RDS(on)1 RDS(on)2 ID=1.5A, VGS=10V 105 137 m ID=0.75A, VGS=4.5V 128 180 m RDS(on)3 Ciss ID=0.75A, VGS=4V 138 194 m Output Capacitance Coss VDS=20V, f=1MHz 54 pF Reverse Transfer Capacitance Crss 44 pF Turn-ON Delay Time td(on) 6.4 ns Rise Time tr Turn-OFF Delay Time td(off) Fall Time tf Static Drain to Source On-State Resistance Input Capacitance Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd 420 See specified Test Circuit VDS=30V, VGS=10V, ID=2.5A S pF 9.8 ns 65 ns 36 ns 11 nC 1.4 nC 2 nC VSD Forward Diode Voltage IS=2.5A, VGS=0V 0.83 1.2 V Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit 0V --10V VDD= --30V VIN ID= --1.5A RL=20 VIN D VOUT PW=10s D.C.≤1% G VEC2315 P.G 50 S www.onsemi.com 2 VEC2315 www.onsemi.com 3 VEC2315 www.onsemi.com 4 VEC2315 PACKAGE DIMENSIONS unit : mm SOT-28FL / VEC8 CASE 318AH ISSUE O to 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Recommended Soldering Footprint 2.8 0.6 0.4 0.65 ORDERING INFORMATION Device Marking Package Shipping (Qty / Packing) UM SOT-28FL / VEC8 (Pb-Free / Halogen Free) 3,000 / Tape & Reel VEC2315-TL-H VEC2315-TL-W † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the VEC2315 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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