VEC2315

Ordering number : EN8699 VEC2315 SANYO Semiconductors DATA SHEET VEC2315 Features • • • • • P-Channel Silicon MOSFETs General-Purpose Switching Device Applications ON-resistance RDS(on)1=105mΩ(typ.) 4V drive High-density mounting Protection diode in Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on ceramic substrate (900mm2×0.8mm) Conditions Ratings --60 ±20 --2.5 --10 0.9 1.0 150 --55 to +150 Unit V V A A W W °C °C Package Dimensions unit : mm (typ) 7012-002 0.2 5 0.3 8 7 65 0.15 Product & Package Information • Package : VEC8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking UM Lot No. 1 2 2.9 0.75 3 0.65 4 TL 2.8 0.25 2.3 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : VEC8 Electrical Connection 8 7 6 5 0.07 1 2 3 4 http://semicon.sanyo.com/en/network 30712PA TKIM TC-00002731 No.8699-1/4 VEC2315 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD IS=--2.5A, VGS=0V VDS=--30V, VGS=--10V, ID=--2.5A See specified Test Circuit. VDS=--20V, f=1MHz Conditions ID=--1mA, VGS=0V VDS=--60V, VGS=0V VGS=±16V, VDS=0V VDS=--10V, ID=--1mA VDS=--10V, ID=--1.5A ID=--1.5A, VGS=--10V ID=--0.75A, VGS=--4.5V ID=--0.75A, VGS=--4V Ratings min --60 --1 ±10 --1.2 3.9 105 128 138 420 54 44 6.4 9.8 65 36 11 1.4 2 --0.83 --1.2 137 180 194 --2.6 typ max Unit V μA μA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit VIN VDD= --30V 0V --10V VIN PW=10μs D.C.≤1% G D ID= --1.5A RL=20Ω VOUT P.G VEC2315 50Ω S --2.5 ID -- VDS 0V --5 ID -- VGS VDS= --10V --16.0V --10 . --2.0 --4. 0V --3. 5V --3 .0V --6.0 V --4 Drain Current, ID -- A --1.5 Drain Current, ID -- A --4 . 5V --2.5 V GS= V --3 --1.0 --2 --0.5 --1 Ta= 7 5°C 0 --0.5 --1.0 --1.5 --2.0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 --25 --2.5 °C 25° C --3.0 --3.5 Drain-to-Source Voltage, VDS -- V IT15911 Gate-to-Source Voltage, VGS -- V IT15912 No.8699-2/4 VEC2315 300 RDS(on) -- VGS Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID= --1.5A --0.75A 300 RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 250 250 200 200 150 150 100 100 75A --0. I D= A 0V, 0.75 --4. = -S= , ID 5A . VG 4.5V I = --1 = -,D VGS --10.0V = VGS 50 50 0 0 --2 --4 --6 --8 --10 --12 --14 --16 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 2 | yfs | -- ID IT15913 7 5 3 2 Ambient Temperature, Ta -- °C IS -- VSD IT15914 Forward Transfer Admittance, | yfs | -- S VDS= --10V VGS=0V 10 7 Source Current, IS -- A 5 3 2 1.0 7 5 3 2 0.1 --0.01 °C 75 2 --0.1 7 5 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --0.01 --0.2 --0.4 Ta= 75°C --0.6 25°C °C 25 --25° C --0.8 Ta °C -25 =- --1.0 7 5 3 --1.0 --1.2 IT15916 Drain Current, ID -- A 2 SW Time -- ID td(off) IT15915 2 Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V Switching Time, SW Time -- ns 100 7 5 VDD= --30V VGS= --10V Ciss, Coss, Crss -- pF 1000 7 5 3 2 tf 3 2 Ciss 10 7 5 3 2 --0.1 2 3 td(on) tr 100 7 5 3 Coss Crss 0 --5 --10 --15 --20 --25 --30 --35 --40 --45 --50 --55 --60 5 7 --1.0 2 3 5 7 2 Drain Current, ID -- A --10 --9 VGS -- Qg IT15917 2 --10 7 5 Drain-to-Source Voltage, VDS -- V ASO IT15918 Gate-to-Source Voltage, VGS -- V VDS= --30V ID= --2.5A Drain Current, ID -- A IDP= --10A (PW≤10μs) 10 s 1m ID= --2.5A --8 --7 --6 --5 --4 --3 --2 --1 0 0 1 2 3 4 5 6 7 8 9 10 11 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 0μ s 10 er io at n 10 m 0m s Operation in this area is limited by RDS(on). Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 1unit 5 7--0.1 23 5 7--1.0 2 3 C D op s 2 a= (T C 5° ) --0.01 --0.01 2 3 5 7--10 23 Total Gate Charge, Qg -- nC IT15919 Drain-to-Source Voltage, VDS -- V 57 --100 IT15920 No.8699-3/4 VEC2315 1.2 PD -- Ta When mounted on ceramic substrate (900mm2×0.8mm) Allowable Power Dissipation, PD -- W 1.0 0.9 0.8 To t al 0.6 di ss 1u 0.4 ip nit ati on 0.2 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT15921 Note on usage : Since the VEC2315 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of March, 2012. Specifications and information herein are subject to change without notice. PS No.8699-4/4