OD-663

HIGH-POWER GaAlAs IRLED ILLUMINATOR .053 .067 OD-663 LED CHIPS .140 R (REF. ONLY) .342 R .325 . 42 1 . 52 1 FEATURES • • • • • • Super high power output 880nm peak emission Three chips connected in series TO-66 header for good heat dissipation 100% tested for power output Electrically isolated case EPOXY .084 .096 .030 .426 .432 .955 .965 1.225 1.255 .480 .350 MIN CATHODE .170 MAX DIMPLE .680 .700 ANODE All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Total Power Output, Po Peak Emission Wavelength, P Spectral Bandwidth at 50%, Half Intensity Beam Angle, Forward Voltage, VF TEST CONDITIONS IF = 300mA IF = 8A IF = 50mA IF = 300mA IR = 10 A VR = 0V MIN 150 TYP 170 3500 880 120 5 4.5 30 30 1 1 80 MAX UNITS mW nm Deg nm Capacitance, C Rise Time Fall Time Reverse Breakdown Voltage, VR 5 Volts Volts pF sec sec ABSOLUTE MAXIMUM RATINGS AT 25°C CASE Continuous Forward Current Reverse Voltage Power Dissipation1 400mA 5V 8A 2W Peak Forward Current (10 s, 400Hz)2 Lead Soldering Temperature (1/16" from case for 10sec) 1Derate per Thermal Derating Curve above 25°C 2Derate linearly above 25°C 260°C THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature -55°C to 100°C 60°C/W Typical 16°C/W Typical 100°C 1Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2Air circulating at a rapid rate to keep case temperature at 25°C Thermal Resistance, RTHJA1 Thermal Resistance, RTHJA2 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: sales@optodiode.com, Website: www.optodiode.com HIGH-POWER GaAlAs IRLED ILLUMINATOR 2,000 1,800 POWER DISSIPATION (mW) 1,600 1,400 1,200 1,000 800 600 400 200 0 25 50 75 AMBIENT TEMPERATURE (°C) 100 NO HEAT SINK INFINITE HEAT SINK OD-663 t = 10 s t = 100 s t = 50 s THERMAL DERATING CURVE PEAK FORWARD CURRENT, Ip (amps) 10 MAXIMUM PEAK PULSE CURRENT 1 MAXIMUM RATINGS 0.1 t Ip T 0.1 D= t T 0.01 0.01 1 DUTY CYCLE, D (%) 10 100 TYPICAL CHARACTERISTICS 100 DEGRADATION CURVE 100 RADIATION PATTERN RELATIVE POWER OUTPUT (%) IF = 300mA TCASE = 91°C IF = 500mA TCASE = 55°C IF = 300mA TCASE = 45°C 80 RELATIVE POWER OUTPUT (%) 105 90 80 60 70 TCASE = 25°C NO PRE BURN-IN PERFORMED 40 60 20 50 101 102 103 STRESS TIME, (hrs) 104 0 –100 –80 –60 –40 –20 0 20 40 BEAM ANGLE, (deg) 60 80 100 8 7 FORWARD CURRENT, IF (amps) FORWARD I-V CHARACTERISTICS 1.5 1.4 RELATIVE POWER OUTPUT 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 POWER OUTPUT vs TEMPERATURE 6 5 4 3 2 1 0 4 6 8 10 12 FORWARD VOLTAGE, VF (volts) 14 16 0.5 –50 –25 0 25 50 AMBIENT TEMPERATURE (°C) 75 100 100 SPECTRAL OUTPUT 10,000 POWER OUTPUT vs FORWARD CURRENT RELATIVE POWER OUTPUT (%) 60 POWER OUTPUT, P (mW) o 80 1,000 100 40 20 10 DC PULSE 10 s, 100Hz 0 750 800 850 900 WAVELENGTH, (nm) 950 1,000 1 10 100 1,000 FORWARD CURRENT, IF (mA) 10,000 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: sales@optodiode.com, Website: www.optodiode.com