UVG100

From Deep UV to Mid-IR UVG100 Photodiode 100 mm2 An ITW Company FEATURES • Square Active Area • • • • Ideal for 190-400 nm Detection 100% Internal QE Excellent UV Response Protective Cover Plate2 Electro-Optical Characteristics at 25 °C Parameters Test Conditions Min Active Area 10 mm x 10 mm Responsivity @ 254 nm 0.08 Shunt Resistance @ ± 10 mV 20 Reverse Breakdown Voltage, VR IR = 1 µA 5 Capacitance, C VR = 0 V Response Time RL = 50 Ω, VR = 10 V Typ Max Units 100 mm2 0.09 A/W MOhms 10 1 Volts 3 nF 10 usec Thermal Parameters Units Storage and Operating Temperature Range Storage Temperature Range -20° to 100°C Operating Temperature Range -20° to 80°C 1 Lead Soldering Temperature 1 0.08" from case for 10 seconds. 2 Shipped with temporary cover to protect the photodiode and wire bonds. Review the Application Note, “Handling Precautions for AXUV, SXUV, and UVG Detectors”, prior to removing cover. Revision November 26, 2019 240°C Page 1 of 3 From Deep UV to Mid-IR UVG100 Photodiode 100 mm2 An ITW Company Typical Photon Responsivity Responsivity (A/W) 0.6 0.5 0.4 0.3 0.2 0.1 0.0 200 300 400 500 600 700 800 900 1000 1100 Wavelength (nm) Capacitance vs. Voltage 1000 CAPACITANCE (pF) 900 800 700 600 500 400 300 200 100 0 0 5 10 5 10 VOLTAGE (V) 15 20 25 15 20 25 Dark Current vs. Voltage DARK CURRENT (nA) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 Revision November 26, 2019 0 VOLTAGE (V) Page 2 of 3 From Deep UV to Mid-IR An ITW Company Photodiode 100 mm2 UVG100 Package Information Dimensions are in inch [metric] units. Specifications are subject to change without prior notice. 1260 Calle Suerte, Camarillo, California 93012 Phone: +1 805.499.0335 | Fax: +1 805.499.8108 | sales@optodiode.com | www.optodiode.com Revision November 26, 2019 Page 3 of 3