UVG5

PHOTODIODE 5 mm2 UVG5 FEATURES • • • • • Circular active area Ideal for 193-400 nm detection 100% internal QE No cap for maximum responsivity Temporary cap taped on for shipping purposes Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS TEST CONDITIONS Active Area Ø 2.5 mm Responsivity, R @ 254 nm Dark Current, Idr VR = 6 V Reverse Breakdown Voltage, VR IR = 1 µA Capacitance, C VR = 0 V Rise Time VR = 0 V MIN 0.09 TYP MAX 5 mm2 0.115 A/W 1 25 UNITS 50 1 nA Volts 2 nF 2 µsec THERMAL PARAMETERS STORAGE AND OPERATING TEMPERATURE RANGE Storage Temperature Range Maximum Junction Temperature -20° TO 80°C 80°C Lead Soldering Temperature1 240°C 1 0.0625" from case for 10 seconds. Shipped with temporary cover to protect photodiode and wire bond. Review Opto Diode “Handling Precautions for IRD Detectors” prior to removing cover. 1260 Calle Suerte, Camarillo, California 93012 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: sales@optodiode.com, Website: www.optodiode.com Revision September 6, 2013 PHOTODIODE 5 mm2 Responsivity (A/W) 0.6 UVG5 RESPONSIVITY 0.5 0.4 0.3 0.2 0.1 0.0 200 300 400 500 600 700 800 900 1000 1100 Wavelength (nm) 1260 Calle Suerte, Camarillo, California 93012 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: sales@optodiode.com, Website: www.optodiode.com Revision September 6, 2013